JP5735490B2 - 半導体素子接点 - Google Patents

半導体素子接点 Download PDF

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Publication number
JP5735490B2
JP5735490B2 JP2012511350A JP2012511350A JP5735490B2 JP 5735490 B2 JP5735490 B2 JP 5735490B2 JP 2012511350 A JP2012511350 A JP 2012511350A JP 2012511350 A JP2012511350 A JP 2012511350A JP 5735490 B2 JP5735490 B2 JP 5735490B2
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JP
Japan
Prior art keywords
semiconductor
contact material
oxide
contact
contacts
Prior art date
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Active
Application number
JP2012511350A
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English (en)
Japanese (ja)
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JP2012527759A5 (enExample
JP2012527759A (ja
Inventor
モハメッド アユーブ
モハメッド アユーブ
ファブリス ディエール
ファブリス ディエール
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Durham Scientific Crystals Ltd
Kromek Ltd
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Durham Scientific Crystals Ltd
Kromek Ltd
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Application filed by Durham Scientific Crystals Ltd, Kromek Ltd filed Critical Durham Scientific Crystals Ltd
Publication of JP2012527759A publication Critical patent/JP2012527759A/ja
Publication of JP2012527759A5 publication Critical patent/JP2012527759A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/8603—Binary Group II-VI materials wherein cadmium is the Group II element, e.g. CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

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  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012511350A 2009-05-19 2010-05-18 半導体素子接点 Active JP5735490B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0908583.8 2009-05-19
GBGB0908583.8A GB0908583D0 (en) 2009-05-19 2009-05-19 Semiconductor device contacts
PCT/GB2010/050804 WO2010133869A1 (en) 2009-05-19 2010-05-18 Semiconductor device contacts

Publications (3)

Publication Number Publication Date
JP2012527759A JP2012527759A (ja) 2012-11-08
JP2012527759A5 JP2012527759A5 (enExample) 2013-05-09
JP5735490B2 true JP5735490B2 (ja) 2015-06-17

Family

ID=40834219

Family Applications (1)

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JP2012511350A Active JP5735490B2 (ja) 2009-05-19 2010-05-18 半導体素子接点

Country Status (5)

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US (1) US8563434B2 (enExample)
EP (1) EP2433296B1 (enExample)
JP (1) JP5735490B2 (enExample)
GB (1) GB0908583D0 (enExample)
WO (1) WO2010133869A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011081322B4 (de) * 2011-08-22 2015-03-26 Siemens Aktiengesellschaft Detektorelement, Strahlungsdetektor und medizinisches Gerät mit solchen Detektorelementen und Verfahren zum Erzeugen eines Detektorelements
CN102683490A (zh) * 2012-05-09 2012-09-19 上海大学 在碲锌镉晶体表面制备In重掺杂的Au/In欧姆接触电极的方法
GB201214567D0 (en) 2012-08-15 2012-09-26 Kromek Ltd Detector and method of operation
DE102012215041A1 (de) * 2012-08-23 2014-02-27 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Halbleiterelementes eines direktkonvertierenden Röntgendetektors
CN112436062B (zh) * 2020-12-01 2022-12-02 上海大学 用于碲锌镉辐射探测器的复合电极及其制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227168A (ja) * 1983-06-08 1984-12-20 Fuji Electric Corp Res & Dev Ltd 半導体放射線検出器
JPH02152228A (ja) * 1988-12-02 1990-06-12 Matsushita Electric Ind Co Ltd 半導体放射線検出器の製造方法
JPH05145068A (ja) 1991-11-21 1993-06-11 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5561082A (en) * 1992-07-31 1996-10-01 Kabushiki Kaisha Toshiba Method for forming an electrode and/or wiring layer by reducing copper oxide or silver oxide
JP2885616B2 (ja) * 1992-07-31 1999-04-26 株式会社東芝 半導体装置およびその製造方法
JPH07321111A (ja) 1994-05-26 1995-12-08 Meidensha Corp 無電解メッキによる集積回路の配線方法
GB9717726D0 (en) 1997-08-22 1997-10-29 Univ Durham Improvements in and relating to crystal growth
JP3486864B2 (ja) * 1999-09-13 2004-01-13 株式会社トッパン エヌイーシー・サーキット ソリューションズ 富山 基板上の銅配線形成方法及び銅配線の形成された基板
US7494927B2 (en) * 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US6455422B1 (en) * 2000-11-02 2002-09-24 Advanced Micro Devices, Inc. Densification process hillock suppression method in integrated circuits
JP5135651B2 (ja) 2001-05-15 2013-02-06 株式会社アクロラド 半導体放射線検出素子
JP2005220402A (ja) * 2004-02-05 2005-08-18 Asahi Kasei Corp 金属酸化物分散体
JP4407311B2 (ja) * 2004-02-20 2010-02-03 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP2007087735A (ja) * 2005-09-21 2007-04-05 Asahi Kasei Corp 金属酸化物分散体
JP2007109905A (ja) * 2005-10-14 2007-04-26 Hitachi Ltd 放射線検出器

Also Published As

Publication number Publication date
US8563434B2 (en) 2013-10-22
EP2433296B1 (en) 2018-11-07
EP2433296A1 (en) 2012-03-28
US20120045868A1 (en) 2012-02-23
GB0908583D0 (en) 2009-06-24
WO2010133869A1 (en) 2010-11-25
JP2012527759A (ja) 2012-11-08

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