GB0908583D0 - Semiconductor device contacts - Google Patents

Semiconductor device contacts

Info

Publication number
GB0908583D0
GB0908583D0 GBGB0908583.8A GB0908583A GB0908583D0 GB 0908583 D0 GB0908583 D0 GB 0908583D0 GB 0908583 A GB0908583 A GB 0908583A GB 0908583 D0 GB0908583 D0 GB 0908583D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
device contacts
electrical contact
fabrication
contact structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0908583.8A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Durham Scientific Crystals Ltd
Original Assignee
Durham Scientific Crystals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Durham Scientific Crystals Ltd filed Critical Durham Scientific Crystals Ltd
Priority to GBGB0908583.8A priority Critical patent/GB0908583D0/en
Publication of GB0908583D0 publication Critical patent/GB0908583D0/en
Priority to PCT/GB2010/050804 priority patent/WO2010133869A1/en
Priority to US13/258,849 priority patent/US8563434B2/en
Priority to EP10725837.8A priority patent/EP2433296B1/en
Priority to JP2012511350A priority patent/JP5735490B2/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/8603—Binary Group II-VI materials wherein cadmium is the Group II element, e.g. CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GBGB0908583.8A 2009-05-19 2009-05-19 Semiconductor device contacts Ceased GB0908583D0 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GBGB0908583.8A GB0908583D0 (en) 2009-05-19 2009-05-19 Semiconductor device contacts
PCT/GB2010/050804 WO2010133869A1 (en) 2009-05-19 2010-05-18 Semiconductor device contacts
US13/258,849 US8563434B2 (en) 2009-05-19 2010-05-18 Semiconductor device contacts
EP10725837.8A EP2433296B1 (en) 2009-05-19 2010-05-18 Semiconductor device contacts
JP2012511350A JP5735490B2 (ja) 2009-05-19 2010-05-18 半導体素子接点

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0908583.8A GB0908583D0 (en) 2009-05-19 2009-05-19 Semiconductor device contacts

Publications (1)

Publication Number Publication Date
GB0908583D0 true GB0908583D0 (en) 2009-06-24

Family

ID=40834219

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0908583.8A Ceased GB0908583D0 (en) 2009-05-19 2009-05-19 Semiconductor device contacts

Country Status (5)

Country Link
US (1) US8563434B2 (enExample)
EP (1) EP2433296B1 (enExample)
JP (1) JP5735490B2 (enExample)
GB (1) GB0908583D0 (enExample)
WO (1) WO2010133869A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011081322B4 (de) * 2011-08-22 2015-03-26 Siemens Aktiengesellschaft Detektorelement, Strahlungsdetektor und medizinisches Gerät mit solchen Detektorelementen und Verfahren zum Erzeugen eines Detektorelements
CN102683490A (zh) * 2012-05-09 2012-09-19 上海大学 在碲锌镉晶体表面制备In重掺杂的Au/In欧姆接触电极的方法
GB201214567D0 (en) 2012-08-15 2012-09-26 Kromek Ltd Detector and method of operation
DE102012215041A1 (de) * 2012-08-23 2014-02-27 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Halbleiterelementes eines direktkonvertierenden Röntgendetektors
CN112436062B (zh) * 2020-12-01 2022-12-02 上海大学 用于碲锌镉辐射探测器的复合电极及其制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227168A (ja) * 1983-06-08 1984-12-20 Fuji Electric Corp Res & Dev Ltd 半導体放射線検出器
JPH02152228A (ja) * 1988-12-02 1990-06-12 Matsushita Electric Ind Co Ltd 半導体放射線検出器の製造方法
JPH05145068A (ja) 1991-11-21 1993-06-11 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5561082A (en) * 1992-07-31 1996-10-01 Kabushiki Kaisha Toshiba Method for forming an electrode and/or wiring layer by reducing copper oxide or silver oxide
JP2885616B2 (ja) * 1992-07-31 1999-04-26 株式会社東芝 半導体装置およびその製造方法
JPH07321111A (ja) 1994-05-26 1995-12-08 Meidensha Corp 無電解メッキによる集積回路の配線方法
GB9717726D0 (en) 1997-08-22 1997-10-29 Univ Durham Improvements in and relating to crystal growth
JP3486864B2 (ja) * 1999-09-13 2004-01-13 株式会社トッパン エヌイーシー・サーキット ソリューションズ 富山 基板上の銅配線形成方法及び銅配線の形成された基板
US7494927B2 (en) * 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US6455422B1 (en) * 2000-11-02 2002-09-24 Advanced Micro Devices, Inc. Densification process hillock suppression method in integrated circuits
JP5135651B2 (ja) 2001-05-15 2013-02-06 株式会社アクロラド 半導体放射線検出素子
JP2005220402A (ja) * 2004-02-05 2005-08-18 Asahi Kasei Corp 金属酸化物分散体
JP4407311B2 (ja) * 2004-02-20 2010-02-03 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP2007087735A (ja) * 2005-09-21 2007-04-05 Asahi Kasei Corp 金属酸化物分散体
JP2007109905A (ja) * 2005-10-14 2007-04-26 Hitachi Ltd 放射線検出器

Also Published As

Publication number Publication date
US8563434B2 (en) 2013-10-22
EP2433296B1 (en) 2018-11-07
EP2433296A1 (en) 2012-03-28
US20120045868A1 (en) 2012-02-23
JP5735490B2 (ja) 2015-06-17
WO2010133869A1 (en) 2010-11-25
JP2012527759A (ja) 2012-11-08

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)