WO2010099892A3 - Solarzellen mit rückseitenkontaktierung sowie verfahren zu deren herstellung - Google Patents

Solarzellen mit rückseitenkontaktierung sowie verfahren zu deren herstellung Download PDF

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Publication number
WO2010099892A3
WO2010099892A3 PCT/EP2010/001152 EP2010001152W WO2010099892A3 WO 2010099892 A3 WO2010099892 A3 WO 2010099892A3 EP 2010001152 W EP2010001152 W EP 2010001152W WO 2010099892 A3 WO2010099892 A3 WO 2010099892A3
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WO
WIPO (PCT)
Prior art keywords
solar cells
rear contact
contact solar
production
relates
Prior art date
Application number
PCT/EP2010/001152
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English (en)
French (fr)
Other versions
WO2010099892A2 (de
Inventor
Filip Granek
Daniel Kray
Kuno Mayer
Monica Aleman
Sybille Hopman
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority to CN2010800100885A priority Critical patent/CN102341921A/zh
Priority to US13/254,181 priority patent/US20120138138A1/en
Priority to EP10705559A priority patent/EP2404323A2/de
Publication of WO2010099892A2 publication Critical patent/WO2010099892A2/de
Publication of WO2010099892A3 publication Critical patent/WO2010099892A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur Herstellung von Solarzellen mit Rückseitenkontaktierung, das auf einer Mikrostrukturierung eines mit einer dielektrisehen Schicht versehenen Wafers und einer Dotierung der mikrostrukturierten Bereiche auf der Rückseite sowie einer Emitterdiffusion auf der Frontseite basiert. Im Anschluss erfolgt die Abscheidung einer metallhaltigen Keimschicht sowie eine galvanische Verstärkung der Kontaktierungen auf der Rückseite. Ebenso betrifft die Erfindung derart herstellbare Solarzellen.
PCT/EP2010/001152 2009-03-02 2010-02-22 Solarzellen mit rückseitenkontaktierung sowie verfahren zu deren herstellung WO2010099892A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2010800100885A CN102341921A (zh) 2009-03-02 2010-02-22 背面接触太阳能电池及其制造方法
US13/254,181 US20120138138A1 (en) 2009-03-02 2010-02-22 Solar cells with back side contacting and also method for production thereof
EP10705559A EP2404323A2 (de) 2009-03-02 2010-02-24 Solarzellen mit rückseitenkontaktierung sowie verfahren zu deren herstellung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009011305.3 2009-03-02
DE102009011305A DE102009011305A1 (de) 2009-03-02 2009-03-02 Solarzellen mit Rückseitenkontaktierung sowie Verfahren zu deren Herstellung

Publications (2)

Publication Number Publication Date
WO2010099892A2 WO2010099892A2 (de) 2010-09-10
WO2010099892A3 true WO2010099892A3 (de) 2010-12-02

Family

ID=42470673

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/001152 WO2010099892A2 (de) 2009-03-02 2010-02-22 Solarzellen mit rückseitenkontaktierung sowie verfahren zu deren herstellung

Country Status (6)

Country Link
US (1) US20120138138A1 (de)
EP (1) EP2404323A2 (de)
KR (1) KR20110137299A (de)
CN (1) CN102341921A (de)
DE (1) DE102009011305A1 (de)
WO (1) WO2010099892A2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102201493A (zh) * 2011-04-02 2011-09-28 周明 一种高速精密晶硅激光刻蚀的装备和工艺方法
US9559228B2 (en) * 2011-09-30 2017-01-31 Sunpower Corporation Solar cell with doped groove regions separated by ridges
CN102437242B (zh) * 2011-12-05 2014-06-25 天威新能源控股有限公司 一种太阳电池背面钝化层开口方法
CN102842646A (zh) * 2012-05-30 2012-12-26 浙江晶科能源有限公司 一种基于n型衬底的ibc电池的制备方法
DE102012214011A1 (de) * 2012-07-23 2014-05-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum schicht- und regioselektiven Abtrag einer metallhaltigen Feststoffschicht von einer zweiten Feststoffschicht mit Hilfe eines Flüssigkeitsstrahls
US9379258B2 (en) 2012-11-05 2016-06-28 Solexel, Inc. Fabrication methods for monolithically isled back contact back junction solar cells
WO2014137283A1 (en) * 2013-03-05 2014-09-12 Trina Solar Energy Development Pte Ltd Method of fabricating a solar cell
CN103367539B (zh) * 2013-06-26 2015-09-09 英利集团有限公司 Ibc太阳能电池的制作方法及ibc太阳能电池
KR101424538B1 (ko) * 2013-06-28 2014-08-04 주식회사 엔씨디 레이저 어닐링 방법을 이용한 베컨텍 태양전지 제조방법
US9653638B2 (en) * 2013-12-20 2017-05-16 Sunpower Corporation Contacts for solar cells formed by directing a laser beam with a particular shape on a metal foil over a dielectric region
CN103956410A (zh) * 2014-05-09 2014-07-30 苏州阿特斯阳光电力科技有限公司 一种n型背结太阳能电池的制备方法
DE102014109179B4 (de) * 2014-07-01 2023-09-14 Universität Konstanz Verfahren zum Erzeugen von unterschiedlich dotierten Bereichen in einem Siliziumsubstrat, insbesondere für eine Solarzelle, und Solarzelle mit diesen unterschiedlich dotierten Bereichen
DE102015213473A1 (de) * 2015-07-17 2017-01-19 Robert Bosch Gmbh Herstellungsverfahren für eine mikromechanische Fensterstruktur und entsprechende mikromechanische Fensterstruktur
CN209389043U (zh) * 2018-11-27 2019-09-13 晶澳（扬州）太阳能科技有限公司 晶体硅太阳能电池及光伏组件
CN113948611B (zh) * 2021-10-15 2023-12-01 浙江爱旭太阳能科技有限公司 一种p型ibc电池及其制备方法、组件、光伏系统
CN117374158B (zh) * 2023-10-17 2024-05-31 扬州大学 一种基于光诱导掺杂的bc结构太阳能电池的制备方法

Citations (5)

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WO1999056907A1 (de) * 1998-04-30 1999-11-11 Synova S.A. Materialbearbeitungsvorrichtung mit einem in einen flüssigkeitsstrahl eingekoppelten laserstrahl
EP1657020A1 (de) * 2004-11-10 2006-05-17 Synova S.A. Verfahren und Vorrichtung zur Optimierung der Kohärenz eines Flüssigkeitsstrahls für eine Materialbearbeitung und Flüssigkeitsdüse für eine solche Vorrichtung
DE102006042617A1 (de) * 2006-09-05 2007-09-13 Maximilian Scherff Lokale Heterostrukturkontakte
WO2008107194A2 (de) * 2007-03-06 2008-09-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur präzisionsbearbeitung von substraten und dessen verwendung
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DE10150040A1 (de) * 2001-10-10 2003-04-17 Merck Patent Gmbh Kombinierte Ätz- und Dotiermedien
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WO2007085452A1 (de) * 2006-01-25 2007-08-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und vorrichtung zur präzisionsbearbeitung von substraten mittels eines in einen flüssigkeitsstrahl eingekoppelten laser und dessen verwendung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999056907A1 (de) * 1998-04-30 1999-11-11 Synova S.A. Materialbearbeitungsvorrichtung mit einem in einen flüssigkeitsstrahl eingekoppelten laserstrahl
EP1657020A1 (de) * 2004-11-10 2006-05-17 Synova S.A. Verfahren und Vorrichtung zur Optimierung der Kohärenz eines Flüssigkeitsstrahls für eine Materialbearbeitung und Flüssigkeitsdüse für eine solche Vorrichtung
DE102006042617A1 (de) * 2006-09-05 2007-09-13 Maximilian Scherff Lokale Heterostrukturkontakte
WO2008107194A2 (de) * 2007-03-06 2008-09-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur präzisionsbearbeitung von substraten und dessen verwendung
WO2008137174A1 (en) * 2007-05-07 2008-11-13 Georgia Tech Research Corporation Formation of high quality back contact with screen-printed local back surface field

Also Published As

Publication number Publication date
KR20110137299A (ko) 2011-12-22
DE102009011305A1 (de) 2010-09-09
CN102341921A (zh) 2012-02-01
EP2404323A2 (de) 2012-01-11
WO2010099892A2 (de) 2010-09-10
US20120138138A1 (en) 2012-06-07

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