JP2016541113A5 - - Google Patents
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- JP2016541113A5 JP2016541113A5 JP2016526908A JP2016526908A JP2016541113A5 JP 2016541113 A5 JP2016541113 A5 JP 2016541113A5 JP 2016526908 A JP2016526908 A JP 2016526908A JP 2016526908 A JP2016526908 A JP 2016526908A JP 2016541113 A5 JP2016541113 A5 JP 2016541113A5
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- JP
- Japan
- Prior art keywords
- adhesive layer
- structure according
- integrated circuit
- circuit structure
- interconnect structure
- Prior art date
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/137,526 | 2013-12-20 | ||
| US14/137,526 US9997457B2 (en) | 2013-12-20 | 2013-12-20 | Cobalt based interconnects and methods of fabrication thereof |
| PCT/IB2015/000198 WO2015092780A1 (en) | 2013-12-20 | 2015-02-21 | Cobalt based interconnects and methods of fabrication thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016541113A JP2016541113A (ja) | 2016-12-28 |
| JP2016541113A5 true JP2016541113A5 (enExample) | 2018-05-24 |
| JP6652245B2 JP6652245B2 (ja) | 2020-02-19 |
Family
ID=53400881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016526908A Active JP6652245B2 (ja) | 2013-12-20 | 2015-02-21 | コバルトベースの複数のインターコネクトおよびそれらの複数の製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (5) | US9997457B2 (enExample) |
| EP (2) | EP3084810B1 (enExample) |
| JP (1) | JP6652245B2 (enExample) |
| KR (3) | KR102710883B1 (enExample) |
| CN (2) | CN106068549B (enExample) |
| TW (1) | TWI610398B (enExample) |
| WO (1) | WO2015092780A1 (enExample) |
Families Citing this family (56)
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| US9997457B2 (en) * | 2013-12-20 | 2018-06-12 | Intel Corporation | Cobalt based interconnects and methods of fabrication thereof |
| US9847289B2 (en) * | 2014-05-30 | 2017-12-19 | Applied Materials, Inc. | Protective via cap for improved interconnect performance |
| EP3155650A4 (en) * | 2014-06-16 | 2018-03-14 | Intel Corporation | Seam healing of metal interconnects |
| US9601430B2 (en) | 2014-10-02 | 2017-03-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure and method for forming the same |
| US20160276156A1 (en) * | 2015-03-16 | 2016-09-22 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and manufacturing process thereof |
| US10692847B2 (en) * | 2015-08-31 | 2020-06-23 | Intel Corporation | Inorganic interposer for multi-chip packaging |
| US9722038B2 (en) * | 2015-09-11 | 2017-08-01 | International Business Machines Corporation | Metal cap protection layer for gate and contact metallization |
| US9484255B1 (en) * | 2015-11-03 | 2016-11-01 | International Business Machines Corporation | Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts |
| US9741577B2 (en) | 2015-12-02 | 2017-08-22 | International Business Machines Corporation | Metal reflow for middle of line contacts |
| TWI637899B (zh) * | 2015-12-15 | 2018-10-11 | 村田製作所股份有限公司 | 微機電裝置和製造其之方法 |
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| US10177030B2 (en) * | 2017-01-11 | 2019-01-08 | International Business Machines Corporation | Cobalt contact and interconnect structures |
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| KR102292645B1 (ko) * | 2017-03-09 | 2021-08-24 | 삼성전자주식회사 | 집적회로 소자 |
| US10109490B1 (en) * | 2017-06-20 | 2018-10-23 | Globalfoundries Inc. | Cobalt interconnects formed by selective bottom-up fill |
| US10553481B2 (en) | 2017-08-31 | 2020-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vias for cobalt-based interconnects and methods of fabrication thereof |
| US12087692B2 (en) * | 2017-09-28 | 2024-09-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Hardened interlayer dielectric layer |
| US11348828B2 (en) * | 2017-11-23 | 2022-05-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect structure and method of forming the same |
| US10541199B2 (en) | 2017-11-29 | 2020-01-21 | International Business Machines Corporation | BEOL integration with advanced interconnects |
| US10847413B2 (en) | 2017-11-30 | 2020-11-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming contact plugs for semiconductor device |
| US11411095B2 (en) * | 2017-11-30 | 2022-08-09 | Intel Corporation | Epitaxial source or drain structures for advanced integrated circuit structure fabrication |
| TWI817576B (zh) * | 2017-11-30 | 2023-10-01 | 美商英特爾股份有限公司 | 用於先進積體電路結構製造之異質金屬線組成 |
| DE102018124674A1 (de) | 2017-11-30 | 2019-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Kontaktstifte für Halbleiter-Bauelement und Verfahren zu deren Herstellung |
| US10340183B1 (en) | 2018-01-02 | 2019-07-02 | Globalfoundries Inc. | Cobalt plated via integration scheme |
| US20190363048A1 (en) * | 2018-05-22 | 2019-11-28 | Lam Research Corporation | Via prefill in a fully aligned via |
| US11501999B2 (en) * | 2018-09-28 | 2022-11-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cobalt fill for gate structures |
| US10971398B2 (en) * | 2018-10-26 | 2021-04-06 | International Business Machines Corporation | Cobalt interconnect structure including noble metal layer |
| CN111261574A (zh) * | 2018-12-03 | 2020-06-09 | 长鑫存储技术有限公司 | 一种半导体结构及其制作方法 |
| FR3092589A1 (fr) | 2019-02-08 | 2020-08-14 | Aveni | Electrodéposition d’un alliage de cobalt et utilisation en microélectronique |
| WO2020161256A1 (en) | 2019-02-08 | 2020-08-13 | Aveni | Electrodeposition of a cobalt or copper alloy, and use in microelectronics |
| US10818589B2 (en) | 2019-03-13 | 2020-10-27 | International Business Machines Corporation | Metal interconnect structures with self-forming sidewall barrier layer |
| US10803548B2 (en) * | 2019-03-15 | 2020-10-13 | Intel Corporation | Disaggregation of SOC architecture |
| US11292938B2 (en) | 2019-09-11 | 2022-04-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films |
| US11189589B2 (en) * | 2019-09-25 | 2021-11-30 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure with raised implanted region and manufacturing method thereof |
| US11152257B2 (en) * | 2020-01-16 | 2021-10-19 | International Business Machines Corporation | Barrier-less prefilled via formation |
| CN116569319A (zh) | 2020-12-10 | 2023-08-08 | 加利福尼亚大学董事会 | Cmos兼容性石墨烯结构、互连体和制造方法 |
| US11581258B2 (en) * | 2021-01-13 | 2023-02-14 | Nanya Technology Corporation | Semiconductor device structure with manganese-containing interconnect structure and method for forming the same |
| EP4288999A4 (en) | 2021-02-08 | 2025-01-15 | MacDermid Enthone Inc. | Method and wet chemical compositions for diffusion barrier formation |
| US12183631B2 (en) * | 2021-07-02 | 2024-12-31 | Applied Materials, Inc. | Methods for copper doped hybrid metallization for line and via |
| US12315735B2 (en) | 2021-07-31 | 2025-05-27 | Applied Materials, Inc. | Methods for removing etch stop layers |
| US20240047350A1 (en) * | 2022-08-03 | 2024-02-08 | Nanya Technology Corporation | Metal structure having funnel-shaped interconnect and method of manufacturing the same |
| US12310084B2 (en) * | 2022-08-22 | 2025-05-20 | Nanya Technology Corporation | Semiconductor device with assistant cap and method for fabricating the same |
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| US20020019127A1 (en) * | 1997-02-14 | 2002-02-14 | Micron Technology, Inc. | Interconnect structure and method of making |
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| JP4197694B2 (ja) | 2005-08-10 | 2008-12-17 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JP4529880B2 (ja) * | 2005-11-21 | 2010-08-25 | ソニー株式会社 | 半導体装置および半導体装置の製造方法 |
| KR100714476B1 (ko) * | 2005-11-25 | 2007-05-07 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
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| KR101629965B1 (ko) * | 2007-04-09 | 2016-06-13 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 구리 배선용 코발트 질화물층 및 이의 제조방법 |
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| US7867891B2 (en) | 2008-12-10 | 2011-01-11 | Intel Corporation | Dual metal interconnects for improved gap-fill, reliability, and reduced capacitance |
| JP4415100B1 (ja) | 2008-12-19 | 2010-02-17 | 国立大学法人東北大学 | 銅配線、半導体装置および銅配線形成方法 |
| JP5326558B2 (ja) * | 2008-12-26 | 2013-10-30 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US8531033B2 (en) * | 2009-09-07 | 2013-09-10 | Advanced Interconnect Materials, Llc | Contact plug structure, semiconductor device, and method for forming contact plug |
| US7956463B2 (en) * | 2009-09-16 | 2011-06-07 | International Business Machines Corporation | Large grain size conductive structure for narrow interconnect openings |
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| US20120141667A1 (en) | 2010-07-16 | 2012-06-07 | Applied Materials, Inc. | Methods for forming barrier/seed layers for copper interconnect structures |
| US8508018B2 (en) * | 2010-09-24 | 2013-08-13 | Intel Corporation | Barrier layers |
| JP5734757B2 (ja) | 2011-06-16 | 2015-06-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US8546885B2 (en) * | 2011-07-25 | 2013-10-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal gate electrode of a field effect transistor |
| KR20130060432A (ko) * | 2011-11-30 | 2013-06-10 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| JP6360276B2 (ja) | 2012-03-08 | 2018-07-18 | 東京エレクトロン株式会社 | 半導体装置、半導体装置の製造方法、半導体製造装置 |
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| US8736056B2 (en) * | 2012-07-31 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device for reducing contact resistance of a metal |
| JP2014062312A (ja) * | 2012-09-24 | 2014-04-10 | Tokyo Electron Ltd | マンガンシリケート膜の形成方法、処理システム、半導体デバイスの製造方法および半導体デバイス |
| JP2014141739A (ja) | 2012-12-27 | 2014-08-07 | Tokyo Electron Ltd | 金属マンガン膜の成膜方法、処理システム、電子デバイスの製造方法および電子デバイス |
| US9514983B2 (en) * | 2012-12-28 | 2016-12-06 | Intel Corporation | Cobalt based interconnects and methods of fabrication thereof |
| US20140273436A1 (en) * | 2013-03-15 | 2014-09-18 | Globalfoundries Inc. | Methods of forming barrier layers for conductive copper structures |
| EP2779224A3 (en) * | 2013-03-15 | 2014-12-31 | Applied Materials, Inc. | Methods for producing interconnects in semiconductor devices |
| US9362228B2 (en) * | 2013-10-22 | 2016-06-07 | Globalfoundries Inc. | Electro-migration enhancing method for self-forming barrier process in copper metalization |
| US9997457B2 (en) * | 2013-12-20 | 2018-06-12 | Intel Corporation | Cobalt based interconnects and methods of fabrication thereof |
-
2013
- 2013-12-20 US US14/137,526 patent/US9997457B2/en active Active
-
2014
- 2014-11-17 TW TW103139777A patent/TWI610398B/zh active
-
2015
- 2015-02-21 KR KR1020237012227A patent/KR102710883B1/ko active Active
- 2015-02-21 CN CN201580002697.9A patent/CN106068549B/zh active Active
- 2015-02-21 EP EP15729733.4A patent/EP3084810B1/en active Active
- 2015-02-21 CN CN202210020138.2A patent/CN114361132B/zh active Active
- 2015-02-21 WO PCT/IB2015/000198 patent/WO2015092780A1/en not_active Ceased
- 2015-02-21 JP JP2016526908A patent/JP6652245B2/ja active Active
- 2015-02-21 KR KR1020167013373A patent/KR20170110000A/ko not_active Ceased
- 2015-02-21 KR KR1020217040015A patent/KR102526836B1/ko active Active
- 2015-02-21 EP EP21170662.7A patent/EP3907755B1/en active Active
-
2018
- 2018-03-19 US US15/925,009 patent/US10700007B2/en active Active
-
2020
- 2020-05-22 US US16/881,530 patent/US11328993B2/en active Active
-
2022
- 2022-04-11 US US17/718,038 patent/US11862563B2/en active Active
-
2023
- 2023-12-29 US US18/400,871 patent/US12354956B2/en active Active
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