JP5384269B2 - Cu配線の形成方法 - Google Patents
Cu配線の形成方法 Download PDFInfo
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- JP5384269B2 JP5384269B2 JP2009216740A JP2009216740A JP5384269B2 JP 5384269 B2 JP5384269 B2 JP 5384269B2 JP 2009216740 A JP2009216740 A JP 2009216740A JP 2009216740 A JP2009216740 A JP 2009216740A JP 5384269 B2 JP5384269 B2 JP 5384269B2
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- 238000000034 method Methods 0.000 title claims description 35
- 238000000137 annealing Methods 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 15
- 238000007747 plating Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 2
- 230000001427 coherent effect Effects 0.000 claims 1
- 230000005012 migration Effects 0.000 description 17
- 238000013508 migration Methods 0.000 description 17
- 239000012528 membrane Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000002776 aggregation Effects 0.000 description 7
- 238000004220 aggregation Methods 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- NQZFAUXPNWSLBI-UHFFFAOYSA-N carbon monoxide;ruthenium Chemical group [Ru].[Ru].[Ru].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] NQZFAUXPNWSLBI-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- -1 ruthenium pentadienyl compound Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
図1は、本発明の一実施形態に係るCu配線の形成方法を含む半導体装置の製造工程を説明するためのフローチャート、図2はその工程断面図である。
ここでは、シリコン基板上にSiO2膜が形成されたウエハを準備し、in−situでバリア膜として厚さ4nmのTaN膜を成膜し、その上に厚さ2nmのRu膜を成膜し、その後厚さ10nmのCu膜を成膜し、さらにその上に厚さ2nmのTa膜を成膜したサンプル(サンプルA)およびTa膜の代わりに厚さ2nmのRu膜を成膜したサンプル(サンプルB)を作成した。また、比較のため、同様に厚さ4nmのTaN膜を成膜した後、その上に厚さ2nmのTa膜を成膜し、その後厚さ10nmのCu膜を成膜し、さらにその上に厚さ2nmTa膜を成膜したサンプル(サンプルC)を作成した。また、サンプルA〜CのCu膜の厚さを20nmに代えたサンプル(サンプルD、E、F)も作成した。これらサンプルについて、Ar雰囲気において150℃、350℃、650℃で30minのアニールを行った後、Cu膜の抵抗を測定した。なお、本実験では膜はベタ膜であり、トレンチにおいて底面から順次バリア膜14、密着膜15、Cu膜16、17、密着膜18が積層された状態に相当する。
Claims (5)
- Cu配線を形成するCu配線の形成方法であり、その後に500℃以上の温度の処理をともなう後工程が施されるCu配線の形成方法であって、
表面にトレンチおよび/またはホールを有する基板上の少なくとも前記トレンチおよび/またはホールの底面と側面に、Cuの格子面間隔との差が10%以内の格子面間隔を有する金属からなる密着膜を形成する工程と、
前記密着膜の上に前記トレンチおよび/またはホールを埋めるようにCu膜を形成する工程と、
前記Cu膜形成後の基板に350〜800℃のアニール処理を行う工程と、
前記Cu膜を研磨して前記Cu膜の前記トレンチおよび/またはホールに対応する部分のみを残存させる工程と、
研磨後のCu膜にキャップを形成してCu配線とする工程と
を有し、
前記キャップを形成する工程は、前記アニール処理を行う工程の後に行われ、かつ、前記Cu膜の上にCuの格子面間隔との差が10%以内の格子面間隔を有する金属からなる密着膜を形成し、その上に絶縁材料からなるキャップ膜を形成するものであることを特徴とするCu配線の形成方法。 - 前記密着膜を構成する金属は、Cuの格子面間隔との差が5%以内の格子面間隔を有することを特徴とする請求項1に記載のCu配線の形成方法。
- 前記密着膜は、Ru膜であり、CVDで形成されることを特徴とする請求項2に記載のCu配線の形成方法。
- 前記Cu膜を形成する工程は、Cuシードを形成した後、Cuめっきを施すことを特徴とする請求項1から請求項3のいずれか1項に記載のCu配線の形成方法。
- 前記基板上の少なくとも前記トレンチおよび/またはホールの底面と側面に密着膜を形成するに先立って、バリア膜を成膜する工程をさらに有することを特徴とする請求項1から請求項4のいずれか1項に記載のCu配線の形成方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009216740A JP5384269B2 (ja) | 2009-09-18 | 2009-09-18 | Cu配線の形成方法 |
CN2010800186034A CN102414804A (zh) | 2009-09-18 | 2010-08-27 | Cu配线的形成方法 |
PCT/JP2010/064588 WO2011033920A1 (ja) | 2009-09-18 | 2010-08-27 | Cu配線の形成方法 |
KR1020127006748A KR101347430B1 (ko) | 2009-09-18 | 2010-08-27 | 구리 배선의 형성 방법 |
US13/496,714 US20120222782A1 (en) | 2009-09-18 | 2010-08-27 | METHOD FOR FORMING Cu WIRING |
TW099131459A TW201131656A (en) | 2009-09-18 | 2010-09-16 | Method of forming cu wiring |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009216740A JP5384269B2 (ja) | 2009-09-18 | 2009-09-18 | Cu配線の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011066274A JP2011066274A (ja) | 2011-03-31 |
JP5384269B2 true JP5384269B2 (ja) | 2014-01-08 |
Family
ID=43758529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009216740A Active JP5384269B2 (ja) | 2009-09-18 | 2009-09-18 | Cu配線の形成方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120222782A1 (ja) |
JP (1) | JP5384269B2 (ja) |
KR (1) | KR101347430B1 (ja) |
CN (1) | CN102414804A (ja) |
TW (1) | TW201131656A (ja) |
WO (1) | WO2011033920A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013074173A (ja) * | 2011-09-28 | 2013-04-22 | Ulvac Japan Ltd | 半導体装置の製造方法、半導体装置 |
JP2013089716A (ja) * | 2011-10-17 | 2013-05-13 | Tokyo Electron Ltd | 半導体装置の製造方法および半導体装置 |
JPWO2013125449A1 (ja) | 2012-02-22 | 2015-07-30 | 東京エレクトロン株式会社 | 半導体装置の製造方法、記憶媒体及び半導体装置 |
JP6437246B2 (ja) * | 2014-08-28 | 2018-12-12 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3409831B2 (ja) * | 1997-02-14 | 2003-05-26 | 日本電信電話株式会社 | 半導体装置の配線構造の製造方法 |
TW476134B (en) * | 2000-02-22 | 2002-02-11 | Ibm | Method for forming dual-layer low dielectric barrier for interconnects and device formed |
US6811658B2 (en) * | 2000-06-29 | 2004-11-02 | Ebara Corporation | Apparatus for forming interconnects |
KR100519169B1 (ko) * | 2003-05-09 | 2005-10-06 | 매그나칩 반도체 유한회사 | 반도체 소자의 금속배선 형성방법 |
JP2007180313A (ja) * | 2005-12-28 | 2007-07-12 | Nec Electronics Corp | 半導体装置および半導体装置の製造方法 |
JP4896850B2 (ja) * | 2006-11-28 | 2012-03-14 | 株式会社神戸製鋼所 | 半導体装置のCu配線およびその製造方法 |
JP2008311457A (ja) * | 2007-06-15 | 2008-12-25 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2010192467A (ja) * | 2007-06-28 | 2010-09-02 | Tokyo Electron Ltd | 被処理体の成膜方法及び処理システム |
JP2009194195A (ja) * | 2008-02-15 | 2009-08-27 | Panasonic Corp | 半導体装置及びその製造方法 |
-
2009
- 2009-09-18 JP JP2009216740A patent/JP5384269B2/ja active Active
-
2010
- 2010-08-27 KR KR1020127006748A patent/KR101347430B1/ko active IP Right Grant
- 2010-08-27 WO PCT/JP2010/064588 patent/WO2011033920A1/ja active Application Filing
- 2010-08-27 CN CN2010800186034A patent/CN102414804A/zh active Pending
- 2010-08-27 US US13/496,714 patent/US20120222782A1/en not_active Abandoned
- 2010-09-16 TW TW099131459A patent/TW201131656A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
TW201131656A (en) | 2011-09-16 |
US20120222782A1 (en) | 2012-09-06 |
KR101347430B1 (ko) | 2014-01-02 |
JP2011066274A (ja) | 2011-03-31 |
WO2011033920A1 (ja) | 2011-03-24 |
KR20120040749A (ko) | 2012-04-27 |
CN102414804A (zh) | 2012-04-11 |
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