JP2005123576A5 - - Google Patents
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- Publication number
- JP2005123576A5 JP2005123576A5 JP2004228438A JP2004228438A JP2005123576A5 JP 2005123576 A5 JP2005123576 A5 JP 2005123576A5 JP 2004228438 A JP2004228438 A JP 2004228438A JP 2004228438 A JP2004228438 A JP 2004228438A JP 2005123576 A5 JP2005123576 A5 JP 2005123576A5
- Authority
- JP
- Japan
- Prior art keywords
- nitrogen
- conductive film
- conductive
- semiconductor region
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 66
- 239000004065 semiconductor Substances 0.000 claims 43
- 229910052757 nitrogen Inorganic materials 0.000 claims 33
- 239000007789 gas Substances 0.000 claims 10
- 238000004544 sputter deposition Methods 0.000 claims 10
- 238000005530 etching Methods 0.000 claims 9
- 229910017464 nitrogen compound Inorganic materials 0.000 claims 8
- 150000002830 nitrogen compounds Chemical class 0.000 claims 8
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000001301 oxygen Substances 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 239000004020 conductor Substances 0.000 claims 5
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 5
- 239000000463 material Substances 0.000 claims 5
- 229920000642 polymer Polymers 0.000 claims 5
- 239000011248 coating agent Substances 0.000 claims 4
- 238000000576 coating method Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 229910052721 tungsten Inorganic materials 0.000 claims 4
- 239000010937 tungsten Substances 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- -1 tungsten nitride Chemical class 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004228438A JP4809596B2 (ja) | 2003-08-04 | 2004-08-04 | 半導体装置及びその作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003286278 | 2003-08-04 | ||
| JP2003286278 | 2003-08-04 | ||
| JP2003329145 | 2003-09-19 | ||
| JP2003329145 | 2003-09-19 | ||
| JP2004228438A JP4809596B2 (ja) | 2003-08-04 | 2004-08-04 | 半導体装置及びその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005123576A JP2005123576A (ja) | 2005-05-12 |
| JP2005123576A5 true JP2005123576A5 (enExample) | 2007-09-13 |
| JP4809596B2 JP4809596B2 (ja) | 2011-11-09 |
Family
ID=34623542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004228438A Expired - Fee Related JP4809596B2 (ja) | 2003-08-04 | 2004-08-04 | 半導体装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4809596B2 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101061846B1 (ko) * | 2004-08-19 | 2011-09-02 | 삼성전자주식회사 | 표시 장치용 구동 장치 |
| JP2008186926A (ja) * | 2007-01-29 | 2008-08-14 | Fujitsu Ltd | 半導体装置とその製造方法 |
| SG171917A1 (en) | 2008-12-02 | 2011-07-28 | Univ Arizona | Method of preparing a flexible substrate assembly and flexible substrate assembly therefrom |
| US9991311B2 (en) | 2008-12-02 | 2018-06-05 | Arizona Board Of Regents On Behalf Of Arizona State University | Dual active layer semiconductor device and method of manufacturing the same |
| US9721825B2 (en) | 2008-12-02 | 2017-08-01 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Method of providing a flexible semiconductor device and flexible semiconductor device thereof |
| US9601530B2 (en) | 2008-12-02 | 2017-03-21 | Arizona Board Of Regents, A Body Corporated Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Dual active layer semiconductor device and method of manufacturing the same |
| WO2010138811A2 (en) * | 2009-05-29 | 2010-12-02 | Arizona Board Of Regents, For And On Behalf Of Arizona State University | Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof |
| WO2011043194A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2012021196A2 (en) | 2010-05-21 | 2012-02-16 | Arizona Board Of Regents, For And On Behalf Of Arizona State University | Method for manufacturing electronic devices and electronic devices thereof |
| WO2012021197A2 (en) | 2010-05-21 | 2012-02-16 | Arizona Board Of Regents, For And On Behalf Of Arizona State University | Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof |
| JP2013070100A (ja) * | 2013-01-09 | 2013-04-18 | Nlt Technologies Ltd | 積層配線、該積層配線を用いた半導体装置及びその製造方法 |
| US10381224B2 (en) | 2014-01-23 | 2019-08-13 | Arizona Board Of Regents On Behalf Of Arizona State University | Method of providing an electronic device and electronic device thereof |
| WO2015156891A2 (en) | 2014-01-23 | 2015-10-15 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University | Method of providing a flexible semiconductor device and flexible semiconductor device thereof |
| WO2017034644A2 (en) | 2015-06-09 | 2017-03-02 | ARIZONA BOARD OF REGENTS a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY | Method of providing an electronic device and electronic device thereof |
| JP6240017B2 (ja) * | 2014-03-31 | 2017-11-29 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2017518638A (ja) | 2014-05-13 | 2017-07-06 | アリゾナ・ボード・オブ・リージェンツ・フォー・アンド・オン・ビハーフ・オブ・アリゾナ・ステイト・ユニバーシティＡｒｉｚｏｎａ Ｂｏａｒｄ Ｏｆ Ｒｅｇｅｎｔｓ Ｆｏｒ Ａｎｄ Ｏｎ Ｂｅｈａｌｆ Ｏｆ Ａｒｉｚｏｎａ Ｓｔａｔｅ Ｕｎｉｖｅｒｓｉｔｙ | 電子デバイスを提供する方法およびその電子デバイス |
| US9938616B2 (en) * | 2014-07-29 | 2018-04-10 | Lam Research Corporation | Physical vapor deposition of low-stress nitrogen-doped tungsten films |
| US9741742B2 (en) | 2014-12-22 | 2017-08-22 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Deformable electronic device and methods of providing and using deformable electronic device |
| US10446582B2 (en) | 2014-12-22 | 2019-10-15 | Arizona Board Of Regents On Behalf Of Arizona State University | Method of providing an imaging system and imaging system thereof |
| JP6650719B2 (ja) | 2015-09-30 | 2020-02-19 | キヤノン株式会社 | 撮像装置、撮像システムおよび半導体装置の製造方法 |
| WO2020074999A1 (ja) | 2018-10-12 | 2020-04-16 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0690503A1 (en) * | 1994-05-31 | 1996-01-03 | Advanced Micro Devices, Inc. | Improved interconnect line structure and process therefor |
| JP2003179232A (ja) * | 2001-12-10 | 2003-06-27 | Toshiba Corp | 平面表示装置及びその製造方法 |
-
2004
- 2004-08-04 JP JP2004228438A patent/JP4809596B2/ja not_active Expired - Fee Related
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