JP4809596B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP4809596B2
JP4809596B2 JP2004228438A JP2004228438A JP4809596B2 JP 4809596 B2 JP4809596 B2 JP 4809596B2 JP 2004228438 A JP2004228438 A JP 2004228438A JP 2004228438 A JP2004228438 A JP 2004228438A JP 4809596 B2 JP4809596 B2 JP 4809596B2
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JP
Japan
Prior art keywords
film
nitrogen
conductive film
insulating film
conductive
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004228438A
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English (en)
Japanese (ja)
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JP2005123576A5 (enExample
JP2005123576A (ja
Inventor
健吾 秋元
厳 藤井
哲司 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2004228438A priority Critical patent/JP4809596B2/ja
Publication of JP2005123576A publication Critical patent/JP2005123576A/ja
Publication of JP2005123576A5 publication Critical patent/JP2005123576A5/ja
Application granted granted Critical
Publication of JP4809596B2 publication Critical patent/JP4809596B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
JP2004228438A 2003-08-04 2004-08-04 半導体装置及びその作製方法 Expired - Fee Related JP4809596B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004228438A JP4809596B2 (ja) 2003-08-04 2004-08-04 半導体装置及びその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003286278 2003-08-04
JP2003286278 2003-08-04
JP2003329145 2003-09-19
JP2003329145 2003-09-19
JP2004228438A JP4809596B2 (ja) 2003-08-04 2004-08-04 半導体装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2005123576A JP2005123576A (ja) 2005-05-12
JP2005123576A5 JP2005123576A5 (enExample) 2007-09-13
JP4809596B2 true JP4809596B2 (ja) 2011-11-09

Family

ID=34623542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004228438A Expired - Fee Related JP4809596B2 (ja) 2003-08-04 2004-08-04 半導体装置及びその作製方法

Country Status (1)

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JP (1) JP4809596B2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101061846B1 (ko) * 2004-08-19 2011-09-02 삼성전자주식회사 표시 장치용 구동 장치
JP2008186926A (ja) * 2007-01-29 2008-08-14 Fujitsu Ltd 半導体装置とその製造方法
SG171917A1 (en) 2008-12-02 2011-07-28 Univ Arizona Method of preparing a flexible substrate assembly and flexible substrate assembly therefrom
US9991311B2 (en) 2008-12-02 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
US9721825B2 (en) 2008-12-02 2017-08-01 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device and flexible semiconductor device thereof
US9601530B2 (en) 2008-12-02 2017-03-21 Arizona Board Of Regents, A Body Corporated Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
WO2010138811A2 (en) * 2009-05-29 2010-12-02 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof
WO2011043194A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2012021196A2 (en) 2010-05-21 2012-02-16 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method for manufacturing electronic devices and electronic devices thereof
WO2012021197A2 (en) 2010-05-21 2012-02-16 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof
JP2013070100A (ja) * 2013-01-09 2013-04-18 Nlt Technologies Ltd 積層配線、該積層配線を用いた半導体装置及びその製造方法
US10381224B2 (en) 2014-01-23 2019-08-13 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an electronic device and electronic device thereof
WO2015156891A2 (en) 2014-01-23 2015-10-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device and flexible semiconductor device thereof
WO2017034644A2 (en) 2015-06-09 2017-03-02 ARIZONA BOARD OF REGENTS a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY Method of providing an electronic device and electronic device thereof
JP6240017B2 (ja) * 2014-03-31 2017-11-29 株式会社東芝 半導体装置及びその製造方法
JP2017518638A (ja) 2014-05-13 2017-07-06 アリゾナ・ボード・オブ・リージェンツ・フォー・アンド・オン・ビハーフ・オブ・アリゾナ・ステイト・ユニバーシティＡｒｉｚｏｎａ Ｂｏａｒｄ Ｏｆ Ｒｅｇｅｎｔｓ Ｆｏｒ Ａｎｄ Ｏｎ Ｂｅｈａｌｆ Ｏｆ Ａｒｉｚｏｎａ Ｓｔａｔｅ Ｕｎｉｖｅｒｓｉｔｙ 電子デバイスを提供する方法およびその電子デバイス
US9938616B2 (en) * 2014-07-29 2018-04-10 Lam Research Corporation Physical vapor deposition of low-stress nitrogen-doped tungsten films
US9741742B2 (en) 2014-12-22 2017-08-22 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Deformable electronic device and methods of providing and using deformable electronic device
US10446582B2 (en) 2014-12-22 2019-10-15 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an imaging system and imaging system thereof
JP6650719B2 (ja) 2015-09-30 2020-02-19 キヤノン株式会社 撮像装置、撮像システムおよび半導体装置の製造方法
WO2020074999A1 (ja) 2018-10-12 2020-04-16 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0690503A1 (en) * 1994-05-31 1996-01-03 Advanced Micro Devices, Inc. Improved interconnect line structure and process therefor
JP2003179232A (ja) * 2001-12-10 2003-06-27 Toshiba Corp 平面表示装置及びその製造方法

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Publication number Publication date
JP2005123576A (ja) 2005-05-12

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