JP2006120870A5 - - Google Patents
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- Publication number
- JP2006120870A5 JP2006120870A5 JP2004307354A JP2004307354A JP2006120870A5 JP 2006120870 A5 JP2006120870 A5 JP 2006120870A5 JP 2004307354 A JP2004307354 A JP 2004307354A JP 2004307354 A JP2004307354 A JP 2004307354A JP 2006120870 A5 JP2006120870 A5 JP 2006120870A5
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- forming
- conductive film
- film
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 16
- 238000009713 electroplating Methods 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- VPTUPAVOBUEXMZ-UHFFFAOYSA-N (1-hydroxy-2-phosphonoethyl)phosphonic acid Chemical compound OP(=O)(O)C(O)CP(O)(O)=O VPTUPAVOBUEXMZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000006061 abrasive grain Substances 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 239000002313 adhesive film Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 37
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004307354A JP2006120870A (ja) | 2004-10-21 | 2004-10-21 | 配線形成方法及び装置 |
| US11/254,789 US20060086618A1 (en) | 2004-10-21 | 2005-10-21 | Method and apparatus for forming interconnects |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004307354A JP2006120870A (ja) | 2004-10-21 | 2004-10-21 | 配線形成方法及び装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006120870A JP2006120870A (ja) | 2006-05-11 |
| JP2006120870A5 true JP2006120870A5 (enExample) | 2007-07-19 |
Family
ID=36205204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004307354A Pending JP2006120870A (ja) | 2004-10-21 | 2004-10-21 | 配線形成方法及び装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20060086618A1 (enExample) |
| JP (1) | JP2006120870A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1894900A3 (en) * | 2006-08-28 | 2010-02-24 | Osaka University | Catalyst-aided chemical processing method and apparatus |
| DE102006056620B4 (de) * | 2006-11-30 | 2010-04-08 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterstruktur und Verfahren zu ihrer Herstellung |
| KR101458038B1 (ko) * | 2006-11-30 | 2014-11-03 | 글로벌파운드리즈 인크. | 은을 포함한 배선을 구비한 반도체 구조체와 그 형성 방법 |
| JP2008141088A (ja) * | 2006-12-05 | 2008-06-19 | Nec Electronics Corp | 半導体装置の製造方法 |
| US8198730B2 (en) | 2007-01-10 | 2012-06-12 | Nec Corporation | Semiconductor device and method of manufacturing the same |
| JP2009064803A (ja) * | 2007-09-04 | 2009-03-26 | Renesas Technology Corp | 半導体装置 |
| US8679970B2 (en) * | 2008-05-21 | 2014-03-25 | International Business Machines Corporation | Structure and process for conductive contact integration |
| US20130052368A1 (en) * | 2010-03-19 | 2013-02-28 | Sigma-Aldrich Co. Llc | Methods for preparing thin films by atomic layer deposition using hydrazines |
| TW202138115A (zh) * | 2019-12-24 | 2021-10-16 | 日商荏原製作所股份有限公司 | 基板處理裝置、基板處理方法及基板處理系統 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4067307B2 (ja) * | 2000-04-27 | 2008-03-26 | 株式会社荏原製作所 | 回転保持装置 |
| JP4644926B2 (ja) * | 2000-10-13 | 2011-03-09 | ソニー株式会社 | 半導体製造装置および半導体装置の製造方法 |
| JP3664669B2 (ja) * | 2001-06-27 | 2005-06-29 | 株式会社荏原製作所 | 電解めっき装置 |
| AU2003217197A1 (en) * | 2002-01-10 | 2003-07-30 | Semitool, Inc. | Method for applying metal features onto barrier layers using electrochemical deposition |
| US7223685B2 (en) * | 2003-06-23 | 2007-05-29 | Intel Corporation | Damascene fabrication with electrochemical layer removal |
-
2004
- 2004-10-21 JP JP2004307354A patent/JP2006120870A/ja active Pending
-
2005
- 2005-10-21 US US11/254,789 patent/US20060086618A1/en not_active Abandoned
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