JP6652245B2 - コバルトベースの複数のインターコネクトおよびそれらの複数の製造方法 - Google Patents

コバルトベースの複数のインターコネクトおよびそれらの複数の製造方法 Download PDF

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JP6652245B2
JP6652245B2 JP2016526908A JP2016526908A JP6652245B2 JP 6652245 B2 JP6652245 B2 JP 6652245B2 JP 2016526908 A JP2016526908 A JP 2016526908A JP 2016526908 A JP2016526908 A JP 2016526908A JP 6652245 B2 JP6652245 B2 JP 6652245B2
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cobalt
adhesive layer
manganese
structure according
layer
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JP2016541113A5 (enExample
JP2016541113A (ja
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ジェゼウスキ、クリストファー、ジェイ．
インドゥクリ、タジャスウィ、ケイ．
チェビアム、ラマナン、ヴィ．
カーヴァー、コリン、ティー．
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Intel Corp
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Intel Corp
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
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    • H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
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    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
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    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2016526908A 2013-12-20 2015-02-21 コバルトベースの複数のインターコネクトおよびそれらの複数の製造方法 Active JP6652245B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/137,526 2013-12-20
US14/137,526 US9997457B2 (en) 2013-12-20 2013-12-20 Cobalt based interconnects and methods of fabrication thereof
PCT/IB2015/000198 WO2015092780A1 (en) 2013-12-20 2015-02-21 Cobalt based interconnects and methods of fabrication thereof

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JP2016541113A JP2016541113A (ja) 2016-12-28
JP2016541113A5 JP2016541113A5 (enExample) 2018-05-24
JP6652245B2 true JP6652245B2 (ja) 2020-02-19

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US (5) US9997457B2 (enExample)
EP (2) EP3084810B1 (enExample)
JP (1) JP6652245B2 (enExample)
KR (3) KR102710883B1 (enExample)
CN (2) CN106068549B (enExample)
TW (1) TWI610398B (enExample)
WO (1) WO2015092780A1 (enExample)

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US9997457B2 (en) * 2013-12-20 2018-06-12 Intel Corporation Cobalt based interconnects and methods of fabrication thereof
US9847289B2 (en) * 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
EP3155650A4 (en) * 2014-06-16 2018-03-14 Intel Corporation Seam healing of metal interconnects
US9601430B2 (en) 2014-10-02 2017-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US20160276156A1 (en) * 2015-03-16 2016-09-22 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing process thereof
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