EP3084810A4 - Cobalt based interconnects and methods of fabrication thereof - Google Patents

Cobalt based interconnects and methods of fabrication thereof Download PDF

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Publication number
EP3084810A4
EP3084810A4 EP15729733.4A EP15729733A EP3084810A4 EP 3084810 A4 EP3084810 A4 EP 3084810A4 EP 15729733 A EP15729733 A EP 15729733A EP 3084810 A4 EP3084810 A4 EP 3084810A4
Authority
EP
European Patent Office
Prior art keywords
fabrication
methods
cobalt based
based interconnects
interconnects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP15729733.4A
Other languages
German (de)
French (fr)
Other versions
EP3084810B1 (en
EP3084810A1 (en
Inventor
Christopher J. Jezewski
Tejaswi K. INDUKURI
Ramanan V. CHEBIAM
Colin T. CARVER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
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Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to EP21170662.7A priority Critical patent/EP3907755A3/en
Publication of EP3084810A1 publication Critical patent/EP3084810A1/en
Publication of EP3084810A4 publication Critical patent/EP3084810A4/en
Application granted granted Critical
Publication of EP3084810B1 publication Critical patent/EP3084810B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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    • H01L21/76841—Barrier, adhesion or liner layers
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    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
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    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
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    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53233—Copper alloys
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    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
EP15729733.4A 2013-12-20 2015-02-21 Cobalt based interconnects and methods of fabrication thereof Active EP3084810B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP21170662.7A EP3907755A3 (en) 2013-12-20 2015-02-21 Cobalt based interconnects and methods of fabrication thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/137,526 US9997457B2 (en) 2013-12-20 2013-12-20 Cobalt based interconnects and methods of fabrication thereof
PCT/IB2015/000198 WO2015092780A1 (en) 2013-12-20 2015-02-21 Cobalt based interconnects and methods of fabrication thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP21170662.7A Division EP3907755A3 (en) 2013-12-20 2015-02-21 Cobalt based interconnects and methods of fabrication thereof

Publications (3)

Publication Number Publication Date
EP3084810A1 EP3084810A1 (en) 2016-10-26
EP3084810A4 true EP3084810A4 (en) 2017-09-06
EP3084810B1 EP3084810B1 (en) 2021-04-28

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EP15729733.4A Active EP3084810B1 (en) 2013-12-20 2015-02-21 Cobalt based interconnects and methods of fabrication thereof
EP21170662.7A Pending EP3907755A3 (en) 2013-12-20 2015-02-21 Cobalt based interconnects and methods of fabrication thereof

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EP21170662.7A Pending EP3907755A3 (en) 2013-12-20 2015-02-21 Cobalt based interconnects and methods of fabrication thereof

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US (5) US9997457B2 (en)
EP (2) EP3084810B1 (en)
JP (1) JP6652245B2 (en)
KR (3) KR102526836B1 (en)
CN (2) CN114361132A (en)
TW (1) TWI610398B (en)
WO (1) WO2015092780A1 (en)

Families Citing this family (46)

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US9847289B2 (en) * 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
CN106463358B (en) * 2014-06-16 2020-04-24 英特尔公司 Seam healing of metal interconnects
US9601430B2 (en) 2014-10-02 2017-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US20160276156A1 (en) * 2015-03-16 2016-09-22 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing process thereof
US9722038B2 (en) * 2015-09-11 2017-08-01 International Business Machines Corporation Metal cap protection layer for gate and contact metallization
US9484255B1 (en) * 2015-11-03 2016-11-01 International Business Machines Corporation Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts
US9741577B2 (en) 2015-12-02 2017-08-22 International Business Machines Corporation Metal reflow for middle of line contacts
TWI637899B (en) * 2015-12-15 2018-10-11 村田製作所股份有限公司 Microelectromechanical device and method for manufacturing it
US10446496B2 (en) 2016-02-17 2019-10-15 International Business Machines Corporation Self-forming barrier for cobalt interconnects
US9837350B2 (en) * 2016-04-12 2017-12-05 International Business Machines Corporation Semiconductor interconnect structure with double conductors
US10438849B2 (en) * 2016-04-25 2019-10-08 Applied Materials, Inc. Microwave anneal to improve CVD metal gap-fill and throughput
US10438847B2 (en) * 2016-05-13 2019-10-08 Lam Research Corporation Manganese barrier and adhesion layers for cobalt
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