JP2012089786A5 - - Google Patents
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- Publication number
- JP2012089786A5 JP2012089786A5 JP2010237405A JP2010237405A JP2012089786A5 JP 2012089786 A5 JP2012089786 A5 JP 2012089786A5 JP 2010237405 A JP2010237405 A JP 2010237405A JP 2010237405 A JP2010237405 A JP 2010237405A JP 2012089786 A5 JP2012089786 A5 JP 2012089786A5
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- conversion element
- layer
- negative electrode
- graphene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 claims 23
- 239000010410 layer Substances 0.000 claims 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 11
- 229910021389 graphene Inorganic materials 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 4
- 239000002356 single layer Substances 0.000 claims 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 3
- 125000004429 atom Chemical group 0.000 claims 3
- 229910052796 boron Inorganic materials 0.000 claims 3
- 239000010949 copper Substances 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 150000001721 carbon Chemical group 0.000 claims 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims 2
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 239000003054 catalyst Substances 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 239000000470 constituent Substances 0.000 claims 1
- 229960003280 cupric chloride Drugs 0.000 claims 1
- 238000004090 dissolution Methods 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 125000004430 oxygen atom Chemical group O* 0.000 claims 1
- 125000004437 phosphorous atom Chemical group 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 238000006467 substitution reaction Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010237405A JP5627390B2 (ja) | 2010-10-22 | 2010-10-22 | 光電変換素子およびその製造方法 |
| US13/235,400 US8907352B2 (en) | 2010-10-22 | 2011-09-18 | Photoelectric conversion element and manufacturing method thereof |
| CN201110329938.4A CN102456753B (zh) | 2010-10-22 | 2011-10-21 | 光电转换元件及其制造方法 |
| KR1020110107925A KR101342778B1 (ko) | 2010-10-22 | 2011-10-21 | 광전 변환 소자 및 그의 제조 방법 |
| KR1020130112566A KR20130121776A (ko) | 2010-10-22 | 2013-09-23 | 광전 변환 소자 및 그의 제조 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010237405A JP5627390B2 (ja) | 2010-10-22 | 2010-10-22 | 光電変換素子およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012089786A JP2012089786A (ja) | 2012-05-10 |
| JP2012089786A5 true JP2012089786A5 (enExample) | 2013-12-05 |
| JP5627390B2 JP5627390B2 (ja) | 2014-11-19 |
Family
ID=45972250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010237405A Active JP5627390B2 (ja) | 2010-10-22 | 2010-10-22 | 光電変換素子およびその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8907352B2 (enExample) |
| JP (1) | JP5627390B2 (enExample) |
| KR (2) | KR101342778B1 (enExample) |
| CN (1) | CN102456753B (enExample) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101271249B1 (ko) * | 2010-12-22 | 2013-06-10 | 한국과학기술원 | 질소가 도핑된 투명 그래핀 필름 및 이의 제조방법 |
| US8685781B2 (en) * | 2011-07-20 | 2014-04-01 | Alliance For Sustainable Energy, Llc | Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby |
| JP5646424B2 (ja) | 2011-09-27 | 2014-12-24 | 株式会社東芝 | 透明電極積層体 |
| JP5856423B2 (ja) | 2011-09-30 | 2016-02-09 | 株式会社東芝 | 導電材料およびこれを用いた電気素子 |
| US10483104B2 (en) | 2012-03-30 | 2019-11-19 | Kabushiki Kaisha Toshiba | Method for producing stacked electrode and method for producing photoelectric conversion device |
| JP5836866B2 (ja) | 2012-03-30 | 2015-12-24 | 株式会社東芝 | 炭素電極とその製造方法およびそれを用いた光電変換素子 |
| WO2013168297A1 (ja) * | 2012-05-11 | 2013-11-14 | グラフェンプラットフォーム株式会社 | グラフェン積層体の製造方法及びグラフェン積層体 |
| JP2014027269A (ja) * | 2012-06-22 | 2014-02-06 | Mitsubishi Chemicals Corp | 光電変換素子、太陽電池、及び太陽電池モジュール |
| US20140060639A1 (en) * | 2012-08-31 | 2014-03-06 | OneSun, LLC | Copper oxide core/shell nanocrystals for use in photovoltaic cells |
| KR101919425B1 (ko) | 2012-10-09 | 2018-11-19 | 삼성전자주식회사 | 그래핀 채널을 포함한 터널링 전계효과 트랜지스터 |
| TWI511356B (zh) | 2012-11-21 | 2015-12-01 | Ind Tech Res Inst | 石墨烯電極、包含其之能量儲存裝置、及其製造方法 |
| WO2014110446A2 (en) * | 2013-01-14 | 2014-07-17 | California Institute Of Technology | Method and system for graphene formation |
| JP6147542B2 (ja) | 2013-04-01 | 2017-06-14 | 株式会社東芝 | 透明導電フィルムおよび電気素子 |
| CN103151101B (zh) * | 2013-04-02 | 2016-08-17 | 中国科学院重庆绿色智能技术研究院 | 掺杂石墨烯柔性透明电极及其制备方法 |
| US10807119B2 (en) | 2013-05-17 | 2020-10-20 | Birmingham Technologies, Inc. | Electrospray pinning of nanograined depositions |
| CN104183775A (zh) * | 2013-05-23 | 2014-12-03 | 海洋王照明科技股份有限公司 | 一种阴极及其制备方法和有机电致发光器件及其制备方法 |
| CN104183774A (zh) * | 2013-05-23 | 2014-12-03 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
| JP6223558B2 (ja) * | 2013-06-14 | 2017-11-01 | エルジー・ケム・リミテッド | 有機太陽電池およびその製造方法 |
| JP6213984B2 (ja) * | 2013-06-17 | 2017-10-18 | 国立研究開発法人産業技術総合研究所 | 有機ｅｌ発光ダイオード及び有機ｅｌ照明装置 |
| EP2857550A1 (en) * | 2013-10-02 | 2015-04-08 | Basf Se | Amine precursors for depositing graphene |
| KR102172481B1 (ko) * | 2014-01-29 | 2020-11-02 | 한국과학기술원 | 일함수 조절이 가능한 그래핀 배리스터를 포함하는 반도체 소자 |
| US10559864B2 (en) | 2014-02-13 | 2020-02-11 | Birmingham Technologies, Inc. | Nanofluid contact potential difference battery |
| CN103943654B (zh) * | 2014-03-05 | 2017-02-01 | 上海天马有机发光显示技术有限公司 | Oled阵列基板及其制备方法、显示面板及显示装置 |
| US10333017B2 (en) * | 2014-03-21 | 2019-06-25 | Brookhaven Science Associates, Llc | Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells |
| KR102355558B1 (ko) * | 2014-07-31 | 2022-01-27 | 삼성전자주식회사 | 이미지 센서 |
| GB2534217A (en) * | 2015-01-19 | 2016-07-20 | Ping Lai Chung | Graphene laminate film with thermal conductivity |
| JP6663142B2 (ja) * | 2015-02-19 | 2020-03-11 | 国立研究開発法人産業技術総合研究所 | 有機エレクトロルミネセンス素子 |
| JP6339037B2 (ja) | 2015-03-18 | 2018-06-06 | 株式会社東芝 | 光電変換素子およびその製造方法 |
| CN104733547B (zh) * | 2015-03-27 | 2017-01-25 | 西交利物浦大学 | 基于石墨烯的柔性碲化镉薄膜太阳能电池及其制备方法 |
| CN104851935B (zh) * | 2015-04-08 | 2017-03-29 | 浙江大学 | 一种电场调控的石墨烯/磷化铟太阳电池及其制备方法 |
| KR102395776B1 (ko) * | 2015-05-18 | 2022-05-09 | 삼성전자주식회사 | 이차원 물질을 포함하는 반도체소자 및 그 제조방법 |
| US10217819B2 (en) * | 2015-05-20 | 2019-02-26 | Samsung Electronics Co., Ltd. | Semiconductor device including metal-2 dimensional material-semiconductor contact |
| CN108012568A (zh) * | 2015-06-25 | 2018-05-08 | 多次元能源系统研究集团 | 使用石墨烯作为导电透明电极的钙钛矿基太阳能电池 |
| BR112017028382B1 (pt) * | 2015-07-30 | 2022-08-16 | Sekisui Chemical Co., Ltd | Célula solar e material semicondutor orgânico |
| US9851257B1 (en) * | 2015-12-28 | 2017-12-26 | Magnolia Optical Technologies, Inc. | Silicon nitride-carbon nanotube-graphene nanocomposite microbolometer IR detector |
| CN109417108B (zh) | 2016-09-28 | 2020-10-23 | 华为技术有限公司 | 透明电极及其制备方法、显示面板、太阳能电池 |
| JP2019021599A (ja) | 2017-07-21 | 2019-02-07 | 株式会社東芝 | 透明電極、およびその製造方法、ならびにその透明電極を用いた電子デバイス |
| WO2019210354A1 (en) | 2018-04-30 | 2019-11-07 | Greatcell Solar Ltd | Electrical and electronic devices with carbon based current collectors |
| US11244816B2 (en) | 2019-02-25 | 2022-02-08 | Birmingham Technologies, Inc. | Method of manufacturing and operating nano-scale energy conversion device |
| US11101421B2 (en) | 2019-02-25 | 2021-08-24 | Birmingham Technologies, Inc. | Nano-scale energy conversion device |
| US10950706B2 (en) * | 2019-02-25 | 2021-03-16 | Birmingham Technologies, Inc. | Nano-scale energy conversion device |
| JP7119102B2 (ja) | 2019-03-05 | 2022-08-16 | 株式会社東芝 | グラフェン含有膜、その製造方法、グラフェン含有膜積層体および光電変換素子 |
| EP3739641B1 (en) | 2019-05-15 | 2025-08-13 | Samsung Electronics Co., Ltd. | N-type semiconductor composition, and thin film, organic photoelectric device, image sensor, and electronic device including the same |
| EP3739643A1 (en) | 2019-05-17 | 2020-11-18 | Samsung Electronics Co., Ltd. | Organic photoelectric device, image sensor, and electronic device |
| US11124864B2 (en) | 2019-05-20 | 2021-09-21 | Birmingham Technologies, Inc. | Method of fabricating nano-structures with engineered nano-scale electrospray depositions |
| US11046578B2 (en) | 2019-05-20 | 2021-06-29 | Birmingham Technologies, Inc. | Single-nozzle apparatus for engineered nano-scale electrospray depositions |
| CN110504384B (zh) * | 2019-08-29 | 2022-04-12 | 京东方科技集团股份有限公司 | 有机电致发光器件和显示面板 |
| US11649525B2 (en) | 2020-05-01 | 2023-05-16 | Birmingham Technologies, Inc. | Single electron transistor (SET), circuit containing set and energy harvesting device, and fabrication method |
| WO2022054150A1 (ja) * | 2020-09-09 | 2022-03-17 | 株式会社 東芝 | 透明電極、透明電極の製造方法、および電子デバイス |
| US11417506B1 (en) | 2020-10-15 | 2022-08-16 | Birmingham Technologies, Inc. | Apparatus including thermal energy harvesting thermionic device integrated with electronics, and related systems and methods |
| US11616186B1 (en) | 2021-06-28 | 2023-03-28 | Birmingham Technologies, Inc. | Thermal-transfer apparatus including thermionic devices, and related methods |
| CH719603A1 (fr) * | 2022-04-12 | 2023-10-31 | Graphenaton Tech Sa | Structure opto-electronique multicouche flexible. |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0693258A (ja) | 1992-09-14 | 1994-04-05 | Toshiba Corp | 有機薄膜素子 |
| JPH08102360A (ja) * | 1994-09-29 | 1996-04-16 | Toyota Central Res & Dev Lab Inc | 有機無機複合薄膜型電界発光素子 |
| US6117529A (en) * | 1996-12-18 | 2000-09-12 | Gunther Leising | Organic electroluminescence devices and displays |
| JPH11163419A (ja) * | 1997-11-26 | 1999-06-18 | Rohm Co Ltd | 発光装置 |
| US7071258B1 (en) | 2002-10-21 | 2006-07-04 | Nanotek Instruments, Inc. | Nano-scaled graphene plates |
| US6891191B2 (en) * | 2003-09-02 | 2005-05-10 | Organic Vision Inc. | Organic semiconductor devices and methods of fabrication |
| JP5034154B2 (ja) | 2004-05-27 | 2012-09-26 | 凸版印刷株式会社 | 有機太陽電池及びその製造方法 |
| KR100790216B1 (ko) | 2006-10-17 | 2008-01-02 | 삼성전자주식회사 | 전도성 분산제를 이용한 ｃｎｔ 투명전극 및 그의 제조방법 |
| US8168964B2 (en) * | 2007-03-02 | 2012-05-01 | Nec Corporation | Semiconductor device using graphene and method of manufacturing the same |
| JP2008239468A (ja) * | 2007-03-29 | 2008-10-09 | Jfe Engineering Kk | 微細炭素繊維およびそれを用いたバイオデバイス |
| KR101384665B1 (ko) | 2007-09-13 | 2014-04-15 | 성균관대학교산학협력단 | 그라펜 시트를 함유하는 투명 전극, 이를 채용한 표시소자및 태양전지 |
| KR101435999B1 (ko) * | 2007-12-07 | 2014-08-29 | 삼성전자주식회사 | 도펀트로 도핑된 산화그라펜의 환원물, 이를 포함하는 박막및 투명전극 |
| JP5659458B2 (ja) * | 2009-03-16 | 2015-01-28 | コニカミノルタ株式会社 | 有機エレクトロニクス素子、有機光電変換素子、及び有機エレクトロルミネッセンス素子 |
| KR20110061909A (ko) * | 2009-12-02 | 2011-06-10 | 삼성전자주식회사 | 도펀트로 도핑된 그라펜 및 이를 이용한 소자 |
| JP4527194B1 (ja) * | 2009-12-11 | 2010-08-18 | エンパイア テクノロジー ディベロップメント エルエルシー | グラフェン構造体、グラフェン構造体の製造方法、及び電子デバイス |
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2010
- 2010-10-22 JP JP2010237405A patent/JP5627390B2/ja active Active
-
2011
- 2011-09-18 US US13/235,400 patent/US8907352B2/en active Active
- 2011-10-21 CN CN201110329938.4A patent/CN102456753B/zh active Active
- 2011-10-21 KR KR1020110107925A patent/KR101342778B1/ko not_active Expired - Fee Related
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2013
- 2013-09-23 KR KR1020130112566A patent/KR20130121776A/ko not_active Withdrawn