CN102456753B - 光电转换元件及其制造方法 - Google Patents
光电转换元件及其制造方法 Download PDFInfo
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- CN102456753B CN102456753B CN201110329938.4A CN201110329938A CN102456753B CN 102456753 B CN102456753 B CN 102456753B CN 201110329938 A CN201110329938 A CN 201110329938A CN 102456753 B CN102456753 B CN 102456753B
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- graphene
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- photoelectric conversion
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
- H10D62/882—Graphene
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/826—Multilayers, e.g. opaque multilayers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010237405A JP5627390B2 (ja) | 2010-10-22 | 2010-10-22 | 光電変換素子およびその製造方法 |
| JP237405/2010 | 2010-10-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102456753A CN102456753A (zh) | 2012-05-16 |
| CN102456753B true CN102456753B (zh) | 2015-05-13 |
Family
ID=45972250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110329938.4A Active CN102456753B (zh) | 2010-10-22 | 2011-10-21 | 光电转换元件及其制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8907352B2 (enExample) |
| JP (1) | JP5627390B2 (enExample) |
| KR (2) | KR101342778B1 (enExample) |
| CN (1) | CN102456753B (enExample) |
Families Citing this family (52)
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|---|---|---|---|---|
| KR101271249B1 (ko) * | 2010-12-22 | 2013-06-10 | 한국과학기술원 | 질소가 도핑된 투명 그래핀 필름 및 이의 제조방법 |
| US8685781B2 (en) * | 2011-07-20 | 2014-04-01 | Alliance For Sustainable Energy, Llc | Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby |
| JP5646424B2 (ja) | 2011-09-27 | 2014-12-24 | 株式会社東芝 | 透明電極積層体 |
| JP5856423B2 (ja) | 2011-09-30 | 2016-02-09 | 株式会社東芝 | 導電材料およびこれを用いた電気素子 |
| US10483104B2 (en) | 2012-03-30 | 2019-11-19 | Kabushiki Kaisha Toshiba | Method for producing stacked electrode and method for producing photoelectric conversion device |
| JP5836866B2 (ja) | 2012-03-30 | 2015-12-24 | 株式会社東芝 | 炭素電極とその製造方法およびそれを用いた光電変換素子 |
| WO2013168297A1 (ja) * | 2012-05-11 | 2013-11-14 | グラフェンプラットフォーム株式会社 | グラフェン積層体の製造方法及びグラフェン積層体 |
| JP2014027269A (ja) * | 2012-06-22 | 2014-02-06 | Mitsubishi Chemicals Corp | 光電変換素子、太陽電池、及び太陽電池モジュール |
| US20140060639A1 (en) * | 2012-08-31 | 2014-03-06 | OneSun, LLC | Copper oxide core/shell nanocrystals for use in photovoltaic cells |
| KR101919425B1 (ko) | 2012-10-09 | 2018-11-19 | 삼성전자주식회사 | 그래핀 채널을 포함한 터널링 전계효과 트랜지스터 |
| TWI511356B (zh) | 2012-11-21 | 2015-12-01 | Ind Tech Res Inst | 石墨烯電極、包含其之能量儲存裝置、及其製造方法 |
| WO2014110446A2 (en) * | 2013-01-14 | 2014-07-17 | California Institute Of Technology | Method and system for graphene formation |
| JP6147542B2 (ja) | 2013-04-01 | 2017-06-14 | 株式会社東芝 | 透明導電フィルムおよび電気素子 |
| CN103151101B (zh) * | 2013-04-02 | 2016-08-17 | 中国科学院重庆绿色智能技术研究院 | 掺杂石墨烯柔性透明电极及其制备方法 |
| US10807119B2 (en) | 2013-05-17 | 2020-10-20 | Birmingham Technologies, Inc. | Electrospray pinning of nanograined depositions |
| CN104183775A (zh) * | 2013-05-23 | 2014-12-03 | 海洋王照明科技股份有限公司 | 一种阴极及其制备方法和有机电致发光器件及其制备方法 |
| CN104183774A (zh) * | 2013-05-23 | 2014-12-03 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
| JP6223558B2 (ja) * | 2013-06-14 | 2017-11-01 | エルジー・ケム・リミテッド | 有機太陽電池およびその製造方法 |
| JP6213984B2 (ja) * | 2013-06-17 | 2017-10-18 | 国立研究開発法人産業技術総合研究所 | 有機el発光ダイオード及び有機el照明装置 |
| EP2857550A1 (en) * | 2013-10-02 | 2015-04-08 | Basf Se | Amine precursors for depositing graphene |
| KR102172481B1 (ko) * | 2014-01-29 | 2020-11-02 | 한국과학기술원 | 일함수 조절이 가능한 그래핀 배리스터를 포함하는 반도체 소자 |
| US10559864B2 (en) | 2014-02-13 | 2020-02-11 | Birmingham Technologies, Inc. | Nanofluid contact potential difference battery |
| CN103943654B (zh) * | 2014-03-05 | 2017-02-01 | 上海天马有机发光显示技术有限公司 | Oled阵列基板及其制备方法、显示面板及显示装置 |
| US10333017B2 (en) * | 2014-03-21 | 2019-06-25 | Brookhaven Science Associates, Llc | Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells |
| KR102355558B1 (ko) * | 2014-07-31 | 2022-01-27 | 삼성전자주식회사 | 이미지 센서 |
| GB2534217A (en) * | 2015-01-19 | 2016-07-20 | Ping Lai Chung | Graphene laminate film with thermal conductivity |
| JP6663142B2 (ja) * | 2015-02-19 | 2020-03-11 | 国立研究開発法人産業技術総合研究所 | 有機エレクトロルミネセンス素子 |
| JP6339037B2 (ja) | 2015-03-18 | 2018-06-06 | 株式会社東芝 | 光電変換素子およびその製造方法 |
| CN104733547B (zh) * | 2015-03-27 | 2017-01-25 | 西交利物浦大学 | 基于石墨烯的柔性碲化镉薄膜太阳能电池及其制备方法 |
| CN104851935B (zh) * | 2015-04-08 | 2017-03-29 | 浙江大学 | 一种电场调控的石墨烯/磷化铟太阳电池及其制备方法 |
| KR102395776B1 (ko) * | 2015-05-18 | 2022-05-09 | 삼성전자주식회사 | 이차원 물질을 포함하는 반도체소자 및 그 제조방법 |
| US10217819B2 (en) * | 2015-05-20 | 2019-02-26 | Samsung Electronics Co., Ltd. | Semiconductor device including metal-2 dimensional material-semiconductor contact |
| CN108012568A (zh) * | 2015-06-25 | 2018-05-08 | 多次元能源系统研究集团 | 使用石墨烯作为导电透明电极的钙钛矿基太阳能电池 |
| BR112017028382B1 (pt) * | 2015-07-30 | 2022-08-16 | Sekisui Chemical Co., Ltd | Célula solar e material semicondutor orgânico |
| US9851257B1 (en) * | 2015-12-28 | 2017-12-26 | Magnolia Optical Technologies, Inc. | Silicon nitride-carbon nanotube-graphene nanocomposite microbolometer IR detector |
| CN109417108B (zh) | 2016-09-28 | 2020-10-23 | 华为技术有限公司 | 透明电极及其制备方法、显示面板、太阳能电池 |
| JP2019021599A (ja) | 2017-07-21 | 2019-02-07 | 株式会社東芝 | 透明電極、およびその製造方法、ならびにその透明電極を用いた電子デバイス |
| WO2019210354A1 (en) | 2018-04-30 | 2019-11-07 | Greatcell Solar Ltd | Electrical and electronic devices with carbon based current collectors |
| US11244816B2 (en) | 2019-02-25 | 2022-02-08 | Birmingham Technologies, Inc. | Method of manufacturing and operating nano-scale energy conversion device |
| US11101421B2 (en) | 2019-02-25 | 2021-08-24 | Birmingham Technologies, Inc. | Nano-scale energy conversion device |
| US10950706B2 (en) * | 2019-02-25 | 2021-03-16 | Birmingham Technologies, Inc. | Nano-scale energy conversion device |
| JP7119102B2 (ja) | 2019-03-05 | 2022-08-16 | 株式会社東芝 | グラフェン含有膜、その製造方法、グラフェン含有膜積層体および光電変換素子 |
| EP3739641B1 (en) | 2019-05-15 | 2025-08-13 | Samsung Electronics Co., Ltd. | N-type semiconductor composition, and thin film, organic photoelectric device, image sensor, and electronic device including the same |
| EP3739643A1 (en) | 2019-05-17 | 2020-11-18 | Samsung Electronics Co., Ltd. | Organic photoelectric device, image sensor, and electronic device |
| US11124864B2 (en) | 2019-05-20 | 2021-09-21 | Birmingham Technologies, Inc. | Method of fabricating nano-structures with engineered nano-scale electrospray depositions |
| US11046578B2 (en) | 2019-05-20 | 2021-06-29 | Birmingham Technologies, Inc. | Single-nozzle apparatus for engineered nano-scale electrospray depositions |
| CN110504384B (zh) * | 2019-08-29 | 2022-04-12 | 京东方科技集团股份有限公司 | 有机电致发光器件和显示面板 |
| US11649525B2 (en) | 2020-05-01 | 2023-05-16 | Birmingham Technologies, Inc. | Single electron transistor (SET), circuit containing set and energy harvesting device, and fabrication method |
| WO2022054150A1 (ja) * | 2020-09-09 | 2022-03-17 | 株式会社 東芝 | 透明電極、透明電極の製造方法、および電子デバイス |
| US11417506B1 (en) | 2020-10-15 | 2022-08-16 | Birmingham Technologies, Inc. | Apparatus including thermal energy harvesting thermionic device integrated with electronics, and related systems and methods |
| US11616186B1 (en) | 2021-06-28 | 2023-03-28 | Birmingham Technologies, Inc. | Thermal-transfer apparatus including thermionic devices, and related methods |
| CH719603A1 (fr) * | 2022-04-12 | 2023-10-31 | Graphenaton Tech Sa | Structure opto-electronique multicouche flexible. |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4527194B1 (ja) * | 2009-12-11 | 2010-08-18 | エンパイア テクノロジー ディベロップメント エルエルシー | グラフェン構造体、グラフェン構造体の製造方法、及び電子デバイス |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0693258A (ja) | 1992-09-14 | 1994-04-05 | Toshiba Corp | 有機薄膜素子 |
| JPH08102360A (ja) * | 1994-09-29 | 1996-04-16 | Toyota Central Res & Dev Lab Inc | 有機無機複合薄膜型電界発光素子 |
| US6117529A (en) * | 1996-12-18 | 2000-09-12 | Gunther Leising | Organic electroluminescence devices and displays |
| JPH11163419A (ja) * | 1997-11-26 | 1999-06-18 | Rohm Co Ltd | 発光装置 |
| US7071258B1 (en) | 2002-10-21 | 2006-07-04 | Nanotek Instruments, Inc. | Nano-scaled graphene plates |
| US6891191B2 (en) * | 2003-09-02 | 2005-05-10 | Organic Vision Inc. | Organic semiconductor devices and methods of fabrication |
| JP5034154B2 (ja) | 2004-05-27 | 2012-09-26 | 凸版印刷株式会社 | 有機太陽電池及びその製造方法 |
| KR100790216B1 (ko) | 2006-10-17 | 2008-01-02 | 삼성전자주식회사 | 전도성 분산제를 이용한 cnt 투명전극 및 그의 제조방법 |
| US8168964B2 (en) * | 2007-03-02 | 2012-05-01 | Nec Corporation | Semiconductor device using graphene and method of manufacturing the same |
| JP2008239468A (ja) * | 2007-03-29 | 2008-10-09 | Jfe Engineering Kk | 微細炭素繊維およびそれを用いたバイオデバイス |
| KR101384665B1 (ko) | 2007-09-13 | 2014-04-15 | 성균관대학교산학협력단 | 그라펜 시트를 함유하는 투명 전극, 이를 채용한 표시소자및 태양전지 |
| KR101435999B1 (ko) * | 2007-12-07 | 2014-08-29 | 삼성전자주식회사 | 도펀트로 도핑된 산화그라펜의 환원물, 이를 포함하는 박막및 투명전극 |
| JP5659458B2 (ja) * | 2009-03-16 | 2015-01-28 | コニカミノルタ株式会社 | 有機エレクトロニクス素子、有機光電変換素子、及び有機エレクトロルミネッセンス素子 |
| KR20110061909A (ko) * | 2009-12-02 | 2011-06-10 | 삼성전자주식회사 | 도펀트로 도핑된 그라펜 및 이를 이용한 소자 |
-
2010
- 2010-10-22 JP JP2010237405A patent/JP5627390B2/ja active Active
-
2011
- 2011-09-18 US US13/235,400 patent/US8907352B2/en active Active
- 2011-10-21 CN CN201110329938.4A patent/CN102456753B/zh active Active
- 2011-10-21 KR KR1020110107925A patent/KR101342778B1/ko not_active Expired - Fee Related
-
2013
- 2013-09-23 KR KR1020130112566A patent/KR20130121776A/ko not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4527194B1 (ja) * | 2009-12-11 | 2010-08-18 | エンパイア テクノロジー ディベロップメント エルエルシー | グラフェン構造体、グラフェン構造体の製造方法、及び電子デバイス |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102456753A (zh) | 2012-05-16 |
| KR20130121776A (ko) | 2013-11-06 |
| JP5627390B2 (ja) | 2014-11-19 |
| US20120098028A1 (en) | 2012-04-26 |
| KR20120042673A (ko) | 2012-05-03 |
| US8907352B2 (en) | 2014-12-09 |
| JP2012089786A (ja) | 2012-05-10 |
| KR101342778B1 (ko) | 2013-12-19 |
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