WO2009016979A1 - 無電解めっきにより金属薄膜を形成しためっき物及びその製造方法 - Google Patents

無電解めっきにより金属薄膜を形成しためっき物及びその製造方法 Download PDF

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Publication number
WO2009016979A1
WO2009016979A1 PCT/JP2008/063023 JP2008063023W WO2009016979A1 WO 2009016979 A1 WO2009016979 A1 WO 2009016979A1 JP 2008063023 W JP2008063023 W JP 2008063023W WO 2009016979 A1 WO2009016979 A1 WO 2009016979A1
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WIPO (PCT)
Prior art keywords
metal
thin film
plating
plated material
film formed
Prior art date
Application number
PCT/JP2008/063023
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English (en)
French (fr)
Inventor
Atsushi Yabe
Junichi Ito
Yoshiyuki Hisumi
Junnosuke Sekiguchi
Toru Imori
Original Assignee
Nippon Mining & Metals Co., Ltd.
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Filing date
Publication date
Application filed by Nippon Mining & Metals Co., Ltd. filed Critical Nippon Mining & Metals Co., Ltd.
Priority to CN2008800013818A priority Critical patent/CN101578394B/zh
Priority to US12/311,208 priority patent/US8394508B2/en
Priority to KR1020097009165A priority patent/KR101110397B1/ko
Priority to EP08791332.3A priority patent/EP2067878B1/en
Priority to JP2008556336A priority patent/JP4376958B2/ja
Publication of WO2009016979A1 publication Critical patent/WO2009016979A1/ja

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C14/34—Sputtering
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C14/58—After-treatment
    • C23C14/584—Non-reactive treatment
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    • C23C18/31—Coating with metals
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54—Contact plating, i.e. electroless electrochemical plating
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    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
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    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12639—Adjacent, identical composition, components
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    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
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    • Y10T428/12—All metal or with adjacent metals
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    • Y10T428/12819—Group VB metal-base component
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    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
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    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
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    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating Methods And Accessories (AREA)
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  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

　無電解めっきにより超微細配線の形成が可能な、薄くかつ均一な膜厚で形成したシード層を有するめっき物であり、しかもシード層を形成する前にバリア層と触媒金属層の二層を形成する煩雑さを解消することができるめっき物、およびそのめっき物の製造方法。 　基材上に、無電解めっきの触媒活性を有する金属（Ａ）と、無電解めっき液に含まれる金属イオンと置換めっきが可能な金属（Ｂ）との合金薄膜が形成され、その上に無電解置換および還元めっきにより金属薄膜が形成されためっき物であって、該触媒活性を有する金属（Ａ）と該置換めっき可能な金属（Ｂ）との合金薄膜が、該金属（Ａ）を５原子％以上、４０原子％以下とする組成であり、該無電解置換および還元めっきにより形成された金属薄膜が厚さ１０ｎｍ以下で抵抗率１０μΩ・ｃｍ以下である金属薄膜であるめっき物。前記金属（Ｂ）は、金属薄膜の金属に対してバリア機能を有することが好ましい。
PCT/JP2008/063023 2007-07-31 2008-07-18 無電解めっきにより金属薄膜を形成しためっき物及びその製造方法 WO2009016979A1 (ja)

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CN2008800013818A CN101578394B (zh) 2007-07-31 2008-07-18 通过无电镀形成金属薄膜的镀敷物及其制造方法
US12/311,208 US8394508B2 (en) 2007-07-31 2008-07-18 Plated article having metal thin film formed by electroless plating
KR1020097009165A KR101110397B1 (ko) 2007-07-31 2008-07-18 무전해 도금에 의해 금속 박막을 형성한 도금물 및 그 제조방법
EP08791332.3A EP2067878B1 (en) 2007-07-31 2008-07-18 Plated material having metal thin film formed by electroless plating, and method for production thereof
JP2008556336A JP4376958B2 (ja) 2007-07-31 2008-07-18 無電解めっきにより金属薄膜を形成しためっき物及びその製造方法

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WO2009116347A1 (ja) 2008-03-19 2009-09-24 日鉱金属株式会社 基材上にバリア兼シード層が形成された電子部材
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JPWO2009016979A1 (ja) 2010-10-14
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CN101578394B (zh) 2011-08-03
CN101578394A (zh) 2009-11-11
US20100003539A1 (en) 2010-01-07
TWI431153B (zh) 2014-03-21
KR101110397B1 (ko) 2012-03-13
EP2067878B1 (en) 2017-03-22
KR20090084848A (ko) 2009-08-05
JP4376958B2 (ja) 2009-12-02
US8394508B2 (en) 2013-03-12

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