WO2010057652A8 - Nonodrähte auf substratoberflächen, verfahren zu deren herstellung sowie deren verwendung - Google Patents
Nonodrähte auf substratoberflächen, verfahren zu deren herstellung sowie deren verwendung Download PDFInfo
- Publication number
- WO2010057652A8 WO2010057652A8 PCT/EP2009/008277 EP2009008277W WO2010057652A8 WO 2010057652 A8 WO2010057652 A8 WO 2010057652A8 EP 2009008277 W EP2009008277 W EP 2009008277W WO 2010057652 A8 WO2010057652 A8 WO 2010057652A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- nanowires
- nanoclusters
- nanoparticles
- substrate surfaces
- seed material
- Prior art date
Links
- 239000002070 nanowire Substances 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 7
- 239000002105 nanoparticle Substances 0.000 abstract 6
- 238000000034 method Methods 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
- H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Theoretical Computer Science (AREA)
- Electromagnetism (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09763848A EP2351087A1 (de) | 2008-11-21 | 2009-11-20 | Nonodrähte auf substratoberflächen, verfahren zu deren herstellung sowie deren verwendung |
CN200980146632.6A CN102301479B (zh) | 2008-11-21 | 2009-11-20 | 基底表面上的纳米线、其制造方法及应用 |
US13/130,234 US20110284820A1 (en) | 2008-11-21 | 2009-11-20 | Nanowires on substrate surfaces, method for producing same and use thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008058400.2 | 2008-11-21 | ||
DE102008058400A DE102008058400A1 (de) | 2008-11-21 | 2008-11-21 | Nanodrähte auf Substratoberflächen, Verfahren zu deren Herstellung sowie deren Verwendung |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010057652A1 WO2010057652A1 (de) | 2010-05-27 |
WO2010057652A8 true WO2010057652A8 (de) | 2011-06-16 |
Family
ID=41600430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2009/008277 WO2010057652A1 (de) | 2008-11-21 | 2009-11-20 | Nonodrähte auf substratoberflächen, verfahren zu deren herstellung sowie deren verwendung |
Country Status (6)
Country | Link |
---|---|
US (1) | US20110284820A1 (de) |
EP (1) | EP2351087A1 (de) |
KR (1) | KR20110099005A (de) |
CN (1) | CN102301479B (de) |
DE (1) | DE102008058400A1 (de) |
WO (1) | WO2010057652A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102569034A (zh) * | 2012-02-15 | 2012-07-11 | 中国科学院半导体研究所 | 在自然氧化的Si衬底上生长InAs纳米线的方法 |
CN102618269B (zh) * | 2012-03-13 | 2016-06-29 | 浙江理工大学 | 一种CdS/Sn异质结构纳米发光材料的制备方法 |
CN103794474A (zh) * | 2014-01-29 | 2014-05-14 | 中国科学院半导体研究所 | 硅衬底上生长纳米线的衬底处理方法 |
US9953989B2 (en) | 2014-03-31 | 2018-04-24 | Taiwan Semiconductor Manufacturing Company Limited and National Taiwan University | Antifuse array and method of forming antifuse using anodic oxidation |
US9528194B2 (en) * | 2014-03-31 | 2016-12-27 | Taiwan Semiconductor Manufacturing Company Limited & National Taiwan University | Systems and methods for forming nanowires using anodic oxidation |
CN104070178A (zh) * | 2014-07-01 | 2014-10-01 | 扬州大学 | 一种粒径可控的单分散铋纳米粒子的制备方法 |
US10160906B2 (en) | 2015-02-24 | 2018-12-25 | Fondazione Istituto Italiano Di Tecnologia | Masked cation exchange lithography |
DE102017104906A1 (de) * | 2017-03-08 | 2018-09-13 | Olav Birlem | Anordnung und Verfahren zum Bereitstellen einer Vielzahl von Nanodrähten |
CN114520266A (zh) * | 2021-10-22 | 2022-05-20 | 中国科学院重庆绿色智能技术研究院 | 硫化铅光电导探测器及其制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19747815A1 (de) | 1997-10-29 | 1999-05-06 | Univ Ulm | Nanostrukturierung von Oberflächen |
WO1999021652A2 (de) * | 1997-10-29 | 1999-05-06 | Universität Ulm | Nanostrukturen |
US20110039690A1 (en) * | 2004-02-02 | 2011-02-17 | Nanosys, Inc. | Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production |
JP4813775B2 (ja) * | 2004-06-18 | 2011-11-09 | 日本電信電話株式会社 | 多孔構造体及びその製造方法 |
WO2008054378A2 (en) | 2005-10-25 | 2008-05-08 | Massachusetts Institute Of Technology | Apparatus and methods for controlled growth and assembly of nanostructures |
JP5032823B2 (ja) * | 2006-10-20 | 2012-09-26 | 日本電信電話株式会社 | ナノ構造およびナノ構造の作製方法 |
DE102007017032B4 (de) | 2007-04-11 | 2011-09-22 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Verfahren zur Herstellung von flächigen Größen- oder Abstandsvariationen in Mustern von Nanostrukturen auf Oberflächen |
CN101255603B (zh) * | 2007-12-06 | 2011-11-23 | 上海大学 | 模板电沉积法制备ⅱ-ⅵ族半导体纳米线的方法 |
-
2008
- 2008-11-21 DE DE102008058400A patent/DE102008058400A1/de not_active Withdrawn
-
2009
- 2009-11-20 US US13/130,234 patent/US20110284820A1/en not_active Abandoned
- 2009-11-20 KR KR1020117012545A patent/KR20110099005A/ko not_active Application Discontinuation
- 2009-11-20 CN CN200980146632.6A patent/CN102301479B/zh not_active Expired - Fee Related
- 2009-11-20 EP EP09763848A patent/EP2351087A1/de not_active Withdrawn
- 2009-11-20 WO PCT/EP2009/008277 patent/WO2010057652A1/de active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN102301479B (zh) | 2014-08-27 |
EP2351087A1 (de) | 2011-08-03 |
CN102301479A (zh) | 2011-12-28 |
US20110284820A1 (en) | 2011-11-24 |
WO2010057652A1 (de) | 2010-05-27 |
DE102008058400A1 (de) | 2010-05-27 |
KR20110099005A (ko) | 2011-09-05 |
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