JP2007158131A5 - - Google Patents
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- Publication number
- JP2007158131A5 JP2007158131A5 JP2005352726A JP2005352726A JP2007158131A5 JP 2007158131 A5 JP2007158131 A5 JP 2007158131A5 JP 2005352726 A JP2005352726 A JP 2005352726A JP 2005352726 A JP2005352726 A JP 2005352726A JP 2007158131 A5 JP2007158131 A5 JP 2007158131A5
- Authority
- JP
- Japan
- Prior art keywords
- group iii
- compound semiconductor
- iii nitride
- electrode layer
- nitride compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 17
- -1 nitride compound Chemical class 0.000 claims 14
- 230000003287 optical effect Effects 0.000 claims 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 239000010948 rhodium Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005352726A JP2007158131A (ja) | 2005-12-06 | 2005-12-06 | Ｉｉｉ族窒化物系化合物半導体光素子 |
| US11/633,621 US20070138540A1 (en) | 2005-06-12 | 2006-12-05 | Group III nitride based compound semiconductor optical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005352726A JP2007158131A (ja) | 2005-12-06 | 2005-12-06 | Ｉｉｉ族窒化物系化合物半導体光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007158131A JP2007158131A (ja) | 2007-06-21 |
| JP2007158131A5 true JP2007158131A5 (enExample) | 2009-12-24 |
Family
ID=38172462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005352726A Withdrawn JP2007158131A (ja) | 2005-06-12 | 2005-12-06 | Ｉｉｉ族窒化物系化合物半導体光素子 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20070138540A1 (enExample) |
| JP (1) | JP2007158131A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007040295A1 (en) * | 2005-10-04 | 2007-04-12 | Seoul Opto Device Co., Ltd. | (al, ga, in)n-based compound semiconductor and method of fabricating the same |
| KR100872717B1 (ko) | 2007-06-22 | 2008-12-05 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
| KR101441833B1 (ko) | 2010-09-30 | 2014-09-18 | 도와 일렉트로닉스 가부시키가이샤 | Ⅲ족 질화물 반도체 발광소자 및 그 제조 방법 |
| WO2012091311A2 (en) * | 2010-12-28 | 2012-07-05 | Seoul Opto Device Co., Ltd. | High efficiency light emitting diode |
| JP2012175040A (ja) | 2011-02-24 | 2012-09-10 | Toshiba Corp | 半導体発光素子及び発光装置 |
| JP2013175761A (ja) * | 2013-04-17 | 2013-09-05 | Toshiba Corp | 半導体発光素子及び発光装置 |
| JP2023154555A (ja) * | 2022-04-07 | 2023-10-20 | 株式会社デンソー | 半導体装置の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
| US6936859B1 (en) * | 1998-05-13 | 2005-08-30 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitride compound |
| US6222207B1 (en) * | 1999-05-24 | 2001-04-24 | Lumileds Lighting, U.S. Llc | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip |
| US6608360B2 (en) * | 2000-12-15 | 2003-08-19 | University Of Houston | One-chip micro-integrated optoelectronic sensor |
| JP3912044B2 (ja) * | 2001-06-06 | 2007-05-09 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法 |
| US6762069B2 (en) * | 2002-11-19 | 2004-07-13 | United Epitaxy Company, Ltd. | Method for manufacturing light-emitting element on non-transparent substrate |
| JP2006066868A (ja) * | 2004-03-23 | 2006-03-09 | Toyoda Gosei Co Ltd | 固体素子および固体素子デバイス |
-
2005
- 2005-12-06 JP JP2005352726A patent/JP2007158131A/ja not_active Withdrawn
-
2006
- 2006-12-05 US US11/633,621 patent/US20070138540A1/en not_active Abandoned
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