JP2007158133A5 - - Google Patents

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Publication number
JP2007158133A5
JP2007158133A5 JP2005352728A JP2005352728A JP2007158133A5 JP 2007158133 A5 JP2007158133 A5 JP 2007158133A5 JP 2005352728 A JP2005352728 A JP 2005352728A JP 2005352728 A JP2005352728 A JP 2005352728A JP 2007158133 A5 JP2007158133 A5 JP 2007158133A5
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JP
Japan
Prior art keywords
layer
group iii
compound semiconductor
iii nitride
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005352728A
Other languages
English (en)
Japanese (ja)
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JP2007158133A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005352728A priority Critical patent/JP2007158133A/ja
Priority claimed from JP2005352728A external-priority patent/JP2007158133A/ja
Priority to US11/633,619 priority patent/US20070141806A1/en
Priority to DE102006035486A priority patent/DE102006035486A1/de
Publication of JP2007158133A publication Critical patent/JP2007158133A/ja
Publication of JP2007158133A5 publication Critical patent/JP2007158133A5/ja
Withdrawn legal-status Critical Current

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JP2005352728A 2005-12-06 2005-12-06 Ｉｉｉ族窒化物系化合物半導体素子の製造方法 Withdrawn JP2007158133A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005352728A JP2007158133A (ja) 2005-12-06 2005-12-06 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
US11/633,619 US20070141806A1 (en) 2005-12-06 2006-12-05 Method for producing group III nitride based compound semiconductor device
DE102006035486A DE102006035486A1 (de) 2005-12-06 2006-12-05 Verfahren zur Herstellung einer Halbleitervorrichtung aus einer Verbindung auf Basis eines Nitrids der Gruppe III

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005352728A JP2007158133A (ja) 2005-12-06 2005-12-06 Ｉｉｉ族窒化物系化合物半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JP2007158133A JP2007158133A (ja) 2007-06-21
JP2007158133A5 true JP2007158133A5 (enExample) 2008-05-15

Family

ID=38135917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005352728A Withdrawn JP2007158133A (ja) 2005-12-06 2005-12-06 Ｉｉｉ族窒化物系化合物半導体素子の製造方法

Country Status (3)

Country Link
US (1) US20070141806A1 (enExample)
JP (1) JP2007158133A (enExample)
DE (1) DE102006035486A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AUPQ008299A0 (en) * 1999-04-30 1999-05-27 G.J. Consultants Pty Ltd Isoflavone metabolites
WO2007040295A1 (en) * 2005-10-04 2007-04-12 Seoul Opto Device Co., Ltd. (al, ga, in)n-based compound semiconductor and method of fabricating the same
US7910945B2 (en) * 2006-06-30 2011-03-22 Cree, Inc. Nickel tin bonding system with barrier layer for semiconductor wafers and devices
US8643195B2 (en) * 2006-06-30 2014-02-04 Cree, Inc. Nickel tin bonding system for semiconductor wafers and devices
US7855459B2 (en) * 2006-09-22 2010-12-21 Cree, Inc. Modified gold-tin system with increased melting temperature for wafer bonding
DE102007046519A1 (de) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung
DE102008006988A1 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US20100244195A1 (en) * 2009-03-27 2010-09-30 Hong Kong Applied Science And Technology Research Institute Co. Ltd. Host substrate for nitride based light emitting devices
CN101681975B (zh) * 2009-03-30 2012-12-12 香港应用科技研究院有限公司 氮化物基发光装置的主基板
US9437785B2 (en) * 2009-08-10 2016-09-06 Cree, Inc. Light emitting diodes including integrated backside reflector and die attach
US7998836B1 (en) 2010-10-27 2011-08-16 Sumitomo Electric Industries, Ltd. Method for fabricating gallium nitride based semiconductor electronic device
FR2972563B1 (fr) 2011-03-07 2013-03-01 Altis Semiconductor Snc Procédé de traitement d'une couche de nitrure de métal oxydée
WO2013057617A1 (en) 2011-10-21 2013-04-25 Koninklijke Philips Electronics N.V. Low warpage wafer bonding through use of slotted substrates
JP5860272B2 (ja) * 2011-11-24 2016-02-16 株式会社ディスコ 光デバイスウエーハの加工方法
TWI577084B (zh) * 2015-11-25 2017-04-01 宏碁股份有限公司 行動通訊裝置
JP6508153B2 (ja) 2016-09-21 2019-05-08 日亜化学工業株式会社 発光素子の製造方法
CN107275188B (zh) * 2017-06-26 2019-08-13 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法
CN107316801B (zh) * 2017-06-26 2019-08-13 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法
CN107316803B (zh) * 2017-06-26 2019-11-22 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法
CN107316800B (zh) * 2017-06-26 2019-12-31 镓特半导体科技（上海）有限公司 自支撑氮化镓层及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5156998A (en) * 1991-09-30 1992-10-20 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes
JP3620926B2 (ja) * 1995-06-16 2005-02-16 豊田合成株式会社 ｐ伝導形３族窒化物半導体の電極及び電極形成方法及び素子
DE19640594B4 (de) * 1996-10-01 2016-08-04 Osram Gmbh Bauelement
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
KR101030068B1 (ko) * 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자

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