JP2011522427A5 - - Google Patents

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Publication number
JP2011522427A5
JP2011522427A5 JP2011511971A JP2011511971A JP2011522427A5 JP 2011522427 A5 JP2011522427 A5 JP 2011522427A5 JP 2011511971 A JP2011511971 A JP 2011511971A JP 2011511971 A JP2011511971 A JP 2011511971A JP 2011522427 A5 JP2011522427 A5 JP 2011522427A5
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Japan
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layer
method step
semiconductor layer
depositing
structured
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JP2011511971A
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English (en)
Japanese (ja)
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JP2011522427A (ja
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Priority claimed from DE102008050538.2A external-priority patent/DE102008050538B4/de
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Publication of JP2011522427A publication Critical patent/JP2011522427A/ja
Publication of JP2011522427A5 publication Critical patent/JP2011522427A5/ja
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JP2011511971A 2008-06-06 2009-06-03 オプトエレクトロニクス部品およびその製造方法 Pending JP2011522427A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008027041 2008-06-06
DE102008027041.5 2008-06-06
DE102008050538.2 2008-10-06
DE102008050538.2A DE102008050538B4 (de) 2008-06-06 2008-10-06 Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
PCT/DE2009/000781 WO2009146689A1 (de) 2008-06-06 2009-06-03 Optoelektronisches bauelement und verfahren zu dessen herstellung

Publications (2)

Publication Number Publication Date
JP2011522427A JP2011522427A (ja) 2011-07-28
JP2011522427A5 true JP2011522427A5 (enExample) 2012-06-07

Family

ID=41129335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011511971A Pending JP2011522427A (ja) 2008-06-06 2009-06-03 オプトエレクトロニクス部品およびその製造方法

Country Status (8)

Country Link
US (2) US10128405B2 (enExample)
EP (1) EP2289113B1 (enExample)
JP (1) JP2011522427A (enExample)
KR (1) KR20110019416A (enExample)
CN (1) CN102057505B (enExample)
DE (1) DE102008050538B4 (enExample)
TW (1) TWI396304B (enExample)
WO (1) WO2009146689A1 (enExample)

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US9583533B2 (en) 2014-03-13 2017-02-28 Apple Inc. LED device with embedded nanowire LEDs
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