JP2010505249A5 - - Google Patents
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- Publication number
- JP2010505249A5 JP2010505249A5 JP2009529520A JP2009529520A JP2010505249A5 JP 2010505249 A5 JP2010505249 A5 JP 2010505249A5 JP 2009529520 A JP2009529520 A JP 2009529520A JP 2009529520 A JP2009529520 A JP 2009529520A JP 2010505249 A5 JP2010505249 A5 JP 2010505249A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- semiconductor
- support
- layer
- active region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 55
- 239000010410 layer Substances 0.000 claims 27
- 230000008878 coupling Effects 0.000 claims 9
- 238000010168 coupling process Methods 0.000 claims 9
- 238000005859 coupling reaction Methods 0.000 claims 9
- 238000000034 method Methods 0.000 claims 9
- 230000005855 radiation Effects 0.000 claims 8
- 239000000463 material Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000012790 adhesive layer Substances 0.000 claims 1
- 238000003486 chemical etching Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006046677 | 2006-09-29 | ||
| DE102006046677.2 | 2006-09-29 | ||
| DE102007004302A DE102007004302A1 (de) | 2006-09-29 | 2007-01-29 | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
| DE102007004302.5 | 2007-01-29 | ||
| PCT/DE2007/001638 WO2008040289A2 (de) | 2006-09-29 | 2007-09-10 | Halbleiterchip und verfahren zur herstellung eines halbleiterchips |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013078641A Division JP2013175750A (ja) | 2006-09-29 | 2013-04-04 | 半導体チップおよび半導体チップの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010505249A JP2010505249A (ja) | 2010-02-18 |
| JP2010505249A5 true JP2010505249A5 (enExample) | 2011-08-04 |
| JP5243436B2 JP5243436B2 (ja) | 2013-07-24 |
Family
ID=39134571
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009529520A Active JP5243436B2 (ja) | 2006-09-29 | 2007-09-10 | 半導体チップおよび半導体チップの製造方法 |
| JP2013078641A Pending JP2013175750A (ja) | 2006-09-29 | 2013-04-04 | 半導体チップおよび半導体チップの製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013078641A Pending JP2013175750A (ja) | 2006-09-29 | 2013-04-04 | 半導体チップおよび半導体チップの製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8431937B2 (enExample) |
| EP (1) | EP2052419B1 (enExample) |
| JP (2) | JP5243436B2 (enExample) |
| KR (1) | KR101456729B1 (enExample) |
| CN (1) | CN101542751B (enExample) |
| DE (1) | DE102007004302A1 (enExample) |
| TW (1) | TWI358840B (enExample) |
| WO (1) | WO2008040289A2 (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2280427B1 (en) * | 2008-04-25 | 2013-08-21 | LG Innotek Co., Ltd | Light emitting diode |
| DE102008020882A1 (de) * | 2008-04-25 | 2009-10-29 | Ledon Lighting Jennersdorf Gmbh | Lichtemittierende Vorrichtung und Verfahren zur Bereitstellung einer lichtemittierenden Vorrichtung mit vordefinierten optischen Eigenschaften des emittierten Lichts |
| KR100994643B1 (ko) * | 2009-01-21 | 2010-11-15 | 주식회사 실트론 | 구형 볼을 이용한 화합물 반도체 기판의 제조 방법과 이를 이용한 화합물 반도체 기판 및 화합물 반도체 소자 |
| DE102009008223A1 (de) * | 2009-02-10 | 2010-08-12 | Osram Opto Semiconductors Gmbh | Verfahren zur Strukturierung einer Halbleiteroberfläche und Halbleiterchip |
| KR101210172B1 (ko) * | 2009-03-02 | 2012-12-07 | 엘지이노텍 주식회사 | 발광 소자 |
| US9337407B2 (en) | 2009-03-31 | 2016-05-10 | Epistar Corporation | Photoelectronic element and the manufacturing method thereof |
| US8704257B2 (en) * | 2009-03-31 | 2014-04-22 | Epistar Corporation | Light-emitting element and the manufacturing method thereof |
| KR101125025B1 (ko) * | 2010-07-23 | 2012-03-27 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
| DE102010036180A1 (de) * | 2010-09-02 | 2012-03-08 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
| US20120056228A1 (en) * | 2010-09-07 | 2012-03-08 | Phostek, Inc. | Led chip modules, method for packaging the led chip modules, and moving fixture thereof |
| CN101944566A (zh) * | 2010-09-28 | 2011-01-12 | 厦门市三安光电科技有限公司 | 具有透明增光键合层的四元发光二极管及其制作工艺 |
| TWI589021B (zh) * | 2011-02-07 | 2017-06-21 | 晶元光電股份有限公司 | 發光元件及其製法 |
| US9269870B2 (en) | 2011-03-17 | 2016-02-23 | Epistar Corporation | Light-emitting device with intermediate layer |
| US10522714B2 (en) | 2011-06-15 | 2019-12-31 | Sensor Electronic Technology, Inc. | Device with inverted large scale light extraction structures |
| US10319881B2 (en) | 2011-06-15 | 2019-06-11 | Sensor Electronic Technology, Inc. | Device including transparent layer with profiled surface for improved extraction |
| US9741899B2 (en) | 2011-06-15 | 2017-08-22 | Sensor Electronic Technology, Inc. | Device with inverted large scale light extraction structures |
| US9142741B2 (en) * | 2011-06-15 | 2015-09-22 | Sensor Electronic Technology, Inc. | Emitting device with improved extraction |
| US9337387B2 (en) | 2011-06-15 | 2016-05-10 | Sensor Electronic Technology, Inc. | Emitting device with improved extraction |
| CN102244164B (zh) * | 2011-07-15 | 2013-11-06 | 财团法人成大研究发展基金会 | 发光二极管晶粒模块、其封装方法及其移取治具 |
| CN102437228B (zh) * | 2011-11-25 | 2013-04-17 | 河南理工大学 | 一种底部耦合光栅量子阱红外焦平面光敏元芯片及其制备方法 |
| DE102012003638A1 (de) * | 2012-02-24 | 2013-08-29 | Limo Patentverwaltung Gmbh & Co. Kg | Leuchtdiode |
| CN102709419B (zh) * | 2012-05-29 | 2014-12-17 | 东南大学 | 一种具有交叉光栅结构的发光二极管及其制备方法 |
| US9249014B2 (en) * | 2012-11-06 | 2016-02-02 | Infineon Technologies Austria Ag | Packaged nano-structured component and method of making a packaged nano-structured component |
| DE102013103216A1 (de) | 2013-03-28 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Halbleiterchip |
| DE102015105509A1 (de) * | 2015-04-10 | 2016-10-13 | Osram Opto Semiconductors Gmbh | Bauelement und Verfahren zur Herstellung eines Bauelements |
| WO2017127461A1 (en) | 2016-01-18 | 2017-07-27 | Sensor Electronic Technology, Inc. | Semiconductor device with improved light propagation |
| CN105870290B (zh) * | 2016-06-23 | 2018-10-09 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
| DE102017114467A1 (de) * | 2017-06-29 | 2019-01-03 | Osram Opto Semiconductors Gmbh | Halbleiterchip mit transparenter Stromaufweitungsschicht |
| TWI634673B (zh) * | 2017-08-09 | 2018-09-01 | 國立交通大學 | 覆晶式發光二極體元件及其製造方法 |
| DE102019100548A1 (de) * | 2019-01-10 | 2020-07-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauelement mit reflektierender gitterstruktur |
| CN110061112B (zh) * | 2019-02-28 | 2022-07-08 | 华灿光电(苏州)有限公司 | GaN基发光二极管外延片及其制备方法 |
| CN118435363A (zh) * | 2021-12-27 | 2024-08-02 | 艾迈斯-欧司朗国际有限责任公司 | 半导体芯片、用于制造半导体芯片的方法和装置 |
Family Cites Families (41)
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|---|---|---|---|---|
| US3739217A (en) * | 1969-06-23 | 1973-06-12 | Bell Telephone Labor Inc | Surface roughening of electroluminescent diodes |
| JP3505353B2 (ja) * | 1997-07-02 | 2004-03-08 | 株式会社東芝 | 半導体発光装置 |
| JP2000058914A (ja) * | 1998-08-03 | 2000-02-25 | Toyoda Gosei Co Ltd | 発光装置 |
| JP4016504B2 (ja) | 1998-10-05 | 2007-12-05 | セイコーエプソン株式会社 | 半導体膜の製造方法及びアニール装置 |
| JP3469484B2 (ja) | 1998-12-24 | 2003-11-25 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
| JP2000260997A (ja) | 1999-03-10 | 2000-09-22 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
| JP3503131B2 (ja) * | 1999-06-03 | 2004-03-02 | サンケン電気株式会社 | 半導体発光装置 |
| EP1234344B1 (en) * | 1999-12-03 | 2020-12-02 | Cree, Inc. | Enhanced light extraction in leds through the use of internal and external optical elements |
| US20020017652A1 (en) * | 2000-08-08 | 2002-02-14 | Stefan Illek | Semiconductor chip for optoelectronics |
| JP4034513B2 (ja) | 2000-12-15 | 2008-01-16 | 日本オプネクスト株式会社 | 面発光型レーザ装置、これを用いた光モジュール、及び光システム |
| GB2373368B (en) * | 2001-03-12 | 2004-10-27 | Arima Optoelectronics Corp | Light emitting devices |
| US6563142B2 (en) * | 2001-07-11 | 2003-05-13 | Lumileds Lighting, U.S., Llc | Reducing the variation of far-field radiation patterns of flipchip light emitting diodes |
| JP4114364B2 (ja) * | 2001-11-08 | 2008-07-09 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
| TWI249148B (en) * | 2004-04-13 | 2006-02-11 | Epistar Corp | Light-emitting device array having binding layer |
| TW567618B (en) * | 2002-07-15 | 2003-12-21 | Epistar Corp | Light emitting diode with adhesive reflection layer and manufacturing method thereof |
| JP4329374B2 (ja) * | 2002-07-29 | 2009-09-09 | パナソニック電工株式会社 | 発光素子およびその製造方法 |
| JP2004111766A (ja) * | 2002-09-20 | 2004-04-08 | Toshiba Corp | 窒化ガリウム系半導体素子及びその製造方法 |
| DE10245628A1 (de) * | 2002-09-30 | 2004-04-15 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung |
| US6929966B2 (en) * | 2002-11-29 | 2005-08-16 | Osram Opto Semiconductors Gmbh | Method for producing a light-emitting semiconductor component |
| JP4201079B2 (ja) * | 2002-12-20 | 2008-12-24 | 昭和電工株式会社 | 発光素子、その製造方法およびledランプ |
| TW571449B (en) * | 2002-12-23 | 2004-01-11 | Epistar Corp | Light-emitting device having micro-reflective structure |
| JP2004266134A (ja) * | 2003-03-03 | 2004-09-24 | Kanegafuchi Chem Ind Co Ltd | ダイボンディング用樹脂ペースト及びそれを用いた発光ダイオード |
| TWI330413B (en) * | 2005-01-25 | 2010-09-11 | Epistar Corp | A light-emitting device |
| US7456035B2 (en) * | 2003-07-29 | 2008-11-25 | Lumination Llc | Flip chip light emitting diode devices having thinned or removed substrates |
| EP1658643B1 (de) * | 2003-08-29 | 2018-11-14 | OSRAM Opto Semiconductors GmbH | Strahlungemittierendes halbleiterbauelement |
| JP4590905B2 (ja) | 2003-10-31 | 2010-12-01 | 豊田合成株式会社 | 発光素子および発光装置 |
| WO2005050748A1 (ja) | 2003-11-19 | 2005-06-02 | Nichia Corporation | 半導体素子及びその製造方法 |
| JP4587675B2 (ja) * | 2004-01-23 | 2010-11-24 | 京セラ株式会社 | 発光素子収納パッケージおよび発光装置 |
| TWI244220B (en) * | 2004-02-20 | 2005-11-21 | Epistar Corp | Organic binding light-emitting device with vertical structure |
| US20050205883A1 (en) * | 2004-03-19 | 2005-09-22 | Wierer Jonathan J Jr | Photonic crystal light emitting device |
| CN100350642C (zh) | 2004-03-26 | 2007-11-21 | 晶元光电股份有限公司 | 垂直结构的有机粘结发光组件 |
| JP5041653B2 (ja) * | 2004-04-21 | 2012-10-03 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
| JP2005347700A (ja) * | 2004-06-07 | 2005-12-15 | Toyoda Gosei Co Ltd | 発光素子およびその製造方法 |
| US20060001035A1 (en) | 2004-06-22 | 2006-01-05 | Toyoda Gosei Co., Ltd. | Light emitting element and method of making same |
| TWI299914B (en) * | 2004-07-12 | 2008-08-11 | Epistar Corp | Light emitting diode with transparent electrically conductive layer and omni directional reflector |
| CN1820378A (zh) | 2004-07-12 | 2006-08-16 | 罗姆股份有限公司 | 半导体发光元件 |
| DE102004050118A1 (de) * | 2004-07-30 | 2006-03-23 | Osram Opto Semiconductors Gmbh | Halbleiterlaserbauelement, optische Vorrichtung für ein Halbleiterlaserbauelement und Verfahren zur Herstellung einer optischen Vorrichtung |
| TWM261838U (en) * | 2004-09-16 | 2005-04-11 | Super Nova Optoelectronics Cor | Structure for GaN based LED with high light extraction efficiency |
| TWI243492B (en) * | 2004-11-03 | 2005-11-11 | Epistar Corp | Light-emitting diodes |
| JP2006156901A (ja) * | 2004-12-01 | 2006-06-15 | Sumitomo Electric Ind Ltd | 半導体発光素子 |
| KR100631418B1 (ko) * | 2005-11-15 | 2006-10-04 | 삼성전기주식회사 | 수직 구조 질화갈륨계 발광다이오드 소자 |
-
2007
- 2007-01-29 DE DE102007004302A patent/DE102007004302A1/de not_active Withdrawn
- 2007-09-10 CN CN2007800359455A patent/CN101542751B/zh active Active
- 2007-09-10 JP JP2009529520A patent/JP5243436B2/ja active Active
- 2007-09-10 US US12/442,501 patent/US8431937B2/en active Active
- 2007-09-10 EP EP07817511.4A patent/EP2052419B1/de active Active
- 2007-09-10 KR KR1020097008876A patent/KR101456729B1/ko active Active
- 2007-09-10 WO PCT/DE2007/001638 patent/WO2008040289A2/de not_active Ceased
- 2007-09-21 TW TW096135379A patent/TWI358840B/zh not_active IP Right Cessation
-
2013
- 2013-04-04 JP JP2013078641A patent/JP2013175750A/ja active Pending
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