JP2012513681A5 - - Google Patents

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Publication number
JP2012513681A5
JP2012513681A5 JP2011542667A JP2011542667A JP2012513681A5 JP 2012513681 A5 JP2012513681 A5 JP 2012513681A5 JP 2011542667 A JP2011542667 A JP 2011542667A JP 2011542667 A JP2011542667 A JP 2011542667A JP 2012513681 A5 JP2012513681 A5 JP 2012513681A5
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JP
Japan
Prior art keywords
light extraction
extraction structure
semiconductor chip
radiation propagation
area
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JP2011542667A
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English (en)
Japanese (ja)
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JP5646503B2 (ja
JP2012513681A (ja
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Priority claimed from DE102008062932A external-priority patent/DE102008062932A1/de
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JP2011542667A 2008-12-23 2009-11-02 オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法 Active JP5646503B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008062932.4 2008-12-23
DE102008062932A DE102008062932A1 (de) 2008-12-23 2008-12-23 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
PCT/DE2009/001550 WO2010072187A2 (de) 2008-12-23 2009-11-02 Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips

Publications (3)

Publication Number Publication Date
JP2012513681A JP2012513681A (ja) 2012-06-14
JP2012513681A5 true JP2012513681A5 (enExample) 2012-11-29
JP5646503B2 JP5646503B2 (ja) 2014-12-24

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ID=42063943

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JP2011542667A Active JP5646503B2 (ja) 2008-12-23 2009-11-02 オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法

Country Status (7)

Country Link
US (1) US8816353B2 (enExample)
EP (1) EP2368278B1 (enExample)
JP (1) JP5646503B2 (enExample)
KR (1) KR101678242B1 (enExample)
CN (1) CN102227825B (enExample)
DE (1) DE102008062932A1 (enExample)
WO (1) WO2010072187A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009019161A1 (de) 2009-04-28 2010-11-04 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
DE102011117381A1 (de) 2011-10-28 2013-05-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
EP2613367A3 (en) * 2012-01-06 2013-09-04 Imec Method for producing a led device .
US8896008B2 (en) 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
JP7007923B2 (ja) * 2018-01-16 2022-01-25 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
DE102018119622A1 (de) * 2018-08-13 2020-02-13 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
US12055758B2 (en) 2019-01-28 2024-08-06 B.G. Negev Technologies & Applications Ltd., At Ben-Gurion University Structure for a waveguide facet
EP4073557A4 (en) * 2020-01-20 2023-10-18 B.G. Negev Technologies and Applications Ltd., at Ben-Gurion University STRUCTURE FOR A WAVEGUIDE FACET
DE102020112414A1 (de) * 2020-05-07 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlung emittierendes Halbleiterbauelement und Verfahren zur Herstellung eines Strahlung emittierenden Halbleiterbauelements

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7026A (en) * 1850-01-15 Door-lock
DE10111501B4 (de) * 2001-03-09 2019-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung
DE10139723A1 (de) 2001-08-13 2003-03-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Chip und strahlungsemittierendes Bauelement
DE10234977A1 (de) * 2002-07-31 2004-02-12 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis
DE10313606A1 (de) * 2003-03-26 2004-10-14 Osram Opto Semiconductors Gmbh Mechanische Mikrostrukturierung eines Halbleiterchips
DE10340271B4 (de) * 2003-08-29 2019-01-17 Osram Opto Semiconductors Gmbh Dünnschicht-Leuchtdiodenchip und Verfahren zu seiner Herstellung
CN100499184C (zh) * 2003-09-26 2009-06-10 奥斯兰姆奥普托半导体有限责任公司 发光薄膜半导体芯片
US8835937B2 (en) 2004-02-20 2014-09-16 Osram Opto Semiconductors Gmbh Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component
JP4371029B2 (ja) * 2004-09-29 2009-11-25 サンケン電気株式会社 半導体発光素子およびその製造方法
KR100631414B1 (ko) 2005-05-19 2006-10-04 삼성전기주식회사 반도체 발광 다이오드 및 그 제조방법
KR100631133B1 (ko) 2005-05-31 2006-10-02 삼성전기주식회사 수직구조 질화물계 반도체 발광 다이오드
JP4986445B2 (ja) 2005-12-13 2012-07-25 昭和電工株式会社 窒化ガリウム系化合物半導体発光素子
JP2007220972A (ja) * 2006-02-17 2007-08-30 Showa Denko Kk 半導体発光素子及びその製造方法、並びにランプ
DE102006017573A1 (de) 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung
KR100764403B1 (ko) * 2006-05-11 2007-10-05 삼성전기주식회사 아조벤젠기 폴리머를 이용한 미세 패터닝 방법을 이용한 질화물계 반도체 발광소자의 제조방법
KR100735470B1 (ko) * 2006-05-19 2007-07-03 삼성전기주식회사 질화물계 반도체 발광소자의 제조방법
JP5318353B2 (ja) * 2007-02-14 2013-10-16 三菱化学株式会社 ＧａＮ系ＬＥＤ素子および発光装置
DE102007061140A1 (de) * 2007-12-19 2009-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit Kühlelement

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