CN102227825B - 光电子半导体芯片以及用于制造光电子半导体芯片的方法 - Google Patents
光电子半导体芯片以及用于制造光电子半导体芯片的方法 Download PDFInfo
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- CN102227825B CN102227825B CN200980148152.3A CN200980148152A CN102227825B CN 102227825 B CN102227825 B CN 102227825B CN 200980148152 A CN200980148152 A CN 200980148152A CN 102227825 B CN102227825 B CN 102227825B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 247
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 230000005855 radiation Effects 0.000 claims abstract description 152
- 239000000463 material Substances 0.000 claims abstract description 137
- 230000035515 penetration Effects 0.000 claims abstract description 124
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 27
- 230000012010 growth Effects 0.000 claims description 17
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910002704 AlGaN Inorganic materials 0.000 claims description 2
- 230000008878 coupling Effects 0.000 description 16
- 238000010168 coupling process Methods 0.000 description 16
- 238000005859 coupling reaction Methods 0.000 description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002118 epoxides Chemical class 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- BGOFCVIGEYGEOF-UJPOAAIJSA-N helicin Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1OC1=CC=CC=C1C=O BGOFCVIGEYGEOF-UJPOAAIJSA-N 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008062932.4 | 2008-12-23 | ||
| DE102008062932A DE102008062932A1 (de) | 2008-12-23 | 2008-12-23 | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| PCT/DE2009/001550 WO2010072187A2 (de) | 2008-12-23 | 2009-11-02 | Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102227825A CN102227825A (zh) | 2011-10-26 |
| CN102227825B true CN102227825B (zh) | 2014-09-24 |
Family
ID=42063943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980148152.3A Active CN102227825B (zh) | 2008-12-23 | 2009-11-02 | 光电子半导体芯片以及用于制造光电子半导体芯片的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8816353B2 (enExample) |
| EP (1) | EP2368278B1 (enExample) |
| JP (1) | JP5646503B2 (enExample) |
| KR (1) | KR101678242B1 (enExample) |
| CN (1) | CN102227825B (enExample) |
| DE (1) | DE102008062932A1 (enExample) |
| WO (1) | WO2010072187A2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009019161A1 (de) | 2009-04-28 | 2010-11-04 | Osram Opto Semiconductors Gmbh | Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode |
| DE102011117381A1 (de) | 2011-10-28 | 2013-05-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| EP2613367A3 (en) * | 2012-01-06 | 2013-09-04 | Imec | Method for producing a led device . |
| US8896008B2 (en) | 2013-04-23 | 2014-11-25 | Cree, Inc. | Light emitting diodes having group III nitride surface features defined by a mask and crystal planes |
| JP7007923B2 (ja) * | 2018-01-16 | 2022-01-25 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| DE102018119622A1 (de) * | 2018-08-13 | 2020-02-13 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| US12055758B2 (en) | 2019-01-28 | 2024-08-06 | B.G. Negev Technologies & Applications Ltd., At Ben-Gurion University | Structure for a waveguide facet |
| EP4073557A4 (en) * | 2020-01-20 | 2023-10-18 | B.G. Negev Technologies and Applications Ltd., at Ben-Gurion University | STRUCTURE FOR A WAVEGUIDE FACET |
| DE102020112414A1 (de) * | 2020-05-07 | 2021-11-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlung emittierendes Halbleiterbauelement und Verfahren zur Herstellung eines Strahlung emittierenden Halbleiterbauelements |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10313606A1 (de) * | 2003-03-26 | 2004-10-14 | Osram Opto Semiconductors Gmbh | Mechanische Mikrostrukturierung eines Halbleiterchips |
| CN1672270A (zh) * | 2002-07-31 | 2005-09-21 | 奥斯兰姆奥普托半导体有限责任公司 | GaN基发射辐射的薄膜半导体器件 |
| DE102006017573A1 (de) * | 2006-04-13 | 2007-10-18 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7026A (en) * | 1850-01-15 | Door-lock | ||
| DE10111501B4 (de) * | 2001-03-09 | 2019-03-21 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung |
| DE10139723A1 (de) | 2001-08-13 | 2003-03-13 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Chip und strahlungsemittierendes Bauelement |
| DE10340271B4 (de) * | 2003-08-29 | 2019-01-17 | Osram Opto Semiconductors Gmbh | Dünnschicht-Leuchtdiodenchip und Verfahren zu seiner Herstellung |
| CN100499184C (zh) * | 2003-09-26 | 2009-06-10 | 奥斯兰姆奥普托半导体有限责任公司 | 发光薄膜半导体芯片 |
| US8835937B2 (en) | 2004-02-20 | 2014-09-16 | Osram Opto Semiconductors Gmbh | Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component |
| JP4371029B2 (ja) * | 2004-09-29 | 2009-11-25 | サンケン電気株式会社 | 半導体発光素子およびその製造方法 |
| KR100631414B1 (ko) | 2005-05-19 | 2006-10-04 | 삼성전기주식회사 | 반도체 발광 다이오드 및 그 제조방법 |
| KR100631133B1 (ko) | 2005-05-31 | 2006-10-02 | 삼성전기주식회사 | 수직구조 질화물계 반도체 발광 다이오드 |
| JP4986445B2 (ja) | 2005-12-13 | 2012-07-25 | 昭和電工株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| JP2007220972A (ja) * | 2006-02-17 | 2007-08-30 | Showa Denko Kk | 半導体発光素子及びその製造方法、並びにランプ |
| KR100764403B1 (ko) * | 2006-05-11 | 2007-10-05 | 삼성전기주식회사 | 아조벤젠기 폴리머를 이용한 미세 패터닝 방법을 이용한 질화물계 반도체 발광소자의 제조방법 |
| KR100735470B1 (ko) * | 2006-05-19 | 2007-07-03 | 삼성전기주식회사 | 질화물계 반도체 발광소자의 제조방법 |
| JP5318353B2 (ja) * | 2007-02-14 | 2013-10-16 | 三菱化学株式会社 | ＧａＮ系ＬＥＤ素子および発光装置 |
| DE102007061140A1 (de) * | 2007-12-19 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit Kühlelement |
-
2008
- 2008-12-23 DE DE102008062932A patent/DE102008062932A1/de not_active Withdrawn
-
2009
- 2009-11-02 US US13/138,034 patent/US8816353B2/en active Active
- 2009-11-02 JP JP2011542667A patent/JP5646503B2/ja active Active
- 2009-11-02 KR KR1020117017209A patent/KR101678242B1/ko active Active
- 2009-11-02 WO PCT/DE2009/001550 patent/WO2010072187A2/de not_active Ceased
- 2009-11-02 EP EP09796292.2A patent/EP2368278B1/de active Active
- 2009-11-02 CN CN200980148152.3A patent/CN102227825B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1672270A (zh) * | 2002-07-31 | 2005-09-21 | 奥斯兰姆奥普托半导体有限责任公司 | GaN基发射辐射的薄膜半导体器件 |
| DE10313606A1 (de) * | 2003-03-26 | 2004-10-14 | Osram Opto Semiconductors Gmbh | Mechanische Mikrostrukturierung eines Halbleiterchips |
| DE102006017573A1 (de) * | 2006-04-13 | 2007-10-18 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2007-220972A 2007.08.30 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2368278B1 (de) | 2014-03-12 |
| DE102008062932A1 (de) | 2010-06-24 |
| CN102227825A (zh) | 2011-10-26 |
| KR101678242B1 (ko) | 2016-11-21 |
| EP2368278A2 (de) | 2011-09-28 |
| US8816353B2 (en) | 2014-08-26 |
| WO2010072187A3 (de) | 2010-10-21 |
| JP5646503B2 (ja) | 2014-12-24 |
| WO2010072187A2 (de) | 2010-07-01 |
| KR20110101220A (ko) | 2011-09-15 |
| US20120146044A1 (en) | 2012-06-14 |
| JP2012513681A (ja) | 2012-06-14 |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |