TWI396304B - 光電組件及其製造方法 - Google Patents
光電組件及其製造方法 Download PDFInfo
- Publication number
- TWI396304B TWI396304B TW098117960A TW98117960A TWI396304B TW I396304 B TWI396304 B TW I396304B TW 098117960 A TW098117960 A TW 098117960A TW 98117960 A TW98117960 A TW 98117960A TW I396304 B TWI396304 B TW I396304B
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- Prior art keywords
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- semiconductor layer
- manufacturing
- steps
- structured
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/835—Reflective materials
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008027041 | 2008-06-06 | ||
| DE102008050538.2A DE102008050538B4 (de) | 2008-06-06 | 2008-10-06 | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201006016A TW201006016A (en) | 2010-02-01 |
| TWI396304B true TWI396304B (zh) | 2013-05-11 |
Family
ID=41129335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098117960A TWI396304B (zh) | 2008-06-06 | 2009-06-01 | 光電組件及其製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US10128405B2 (enExample) |
| EP (1) | EP2289113B1 (enExample) |
| JP (1) | JP2011522427A (enExample) |
| KR (1) | KR20110019416A (enExample) |
| CN (1) | CN102057505B (enExample) |
| DE (1) | DE102008050538B4 (enExample) |
| TW (1) | TWI396304B (enExample) |
| WO (1) | WO2009146689A1 (enExample) |
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| DE102008026839A1 (de) | 2007-12-20 | 2009-07-02 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements in Dünnschichttechnik |
| DE102009058006B4 (de) * | 2009-12-11 | 2022-03-31 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil |
| TWI420155B (zh) * | 2010-06-11 | 2013-12-21 | Au Optronics Corp | 光學模組及顯示裝置之製造方法 |
| DE102011054891B4 (de) | 2011-10-28 | 2017-10-19 | Osram Opto Semiconductors Gmbh | Verfahren zum Durchtrennen eines Halbleiterbauelementverbunds |
| US8349116B1 (en) | 2011-11-18 | 2013-01-08 | LuxVue Technology Corporation | Micro device transfer head heater assembly and method of transferring a micro device |
| US8573469B2 (en) | 2011-11-18 | 2013-11-05 | LuxVue Technology Corporation | Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer |
| US8646505B2 (en) | 2011-11-18 | 2014-02-11 | LuxVue Technology Corporation | Micro device transfer head |
| US8518204B2 (en) | 2011-11-18 | 2013-08-27 | LuxVue Technology Corporation | Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer |
| US8794501B2 (en) | 2011-11-18 | 2014-08-05 | LuxVue Technology Corporation | Method of transferring a light emitting diode |
| US9773750B2 (en) | 2012-02-09 | 2017-09-26 | Apple Inc. | Method of transferring and bonding an array of micro devices |
| US9548332B2 (en) | 2012-04-27 | 2017-01-17 | Apple Inc. | Method of forming a micro LED device with self-aligned metallization stack |
| US9105492B2 (en) | 2012-05-08 | 2015-08-11 | LuxVue Technology Corporation | Compliant micro device transfer head |
| US8415768B1 (en) | 2012-07-06 | 2013-04-09 | LuxVue Technology Corporation | Compliant monopolar micro device transfer head with silicon electrode |
| US8791530B2 (en) | 2012-09-06 | 2014-07-29 | LuxVue Technology Corporation | Compliant micro device transfer head with integrated electrode leads |
| US9162880B2 (en) | 2012-09-07 | 2015-10-20 | LuxVue Technology Corporation | Mass transfer tool |
| US9558721B2 (en) | 2012-10-15 | 2017-01-31 | Apple Inc. | Content-based adaptive refresh schemes for low-power displays |
| DE102012111358A1 (de) * | 2012-11-23 | 2014-05-28 | Osram Opto Semiconductors Gmbh | Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip |
| US9236815B2 (en) | 2012-12-10 | 2016-01-12 | LuxVue Technology Corporation | Compliant micro device transfer head array with metal electrodes |
| US9923118B2 (en) * | 2013-02-25 | 2018-03-20 | Sensor Electronic Technology, Inc. | Semiconductor structure with inhomogeneous regions |
| US9484504B2 (en) | 2013-05-14 | 2016-11-01 | Apple Inc. | Micro LED with wavelength conversion layer |
| US9217541B2 (en) | 2013-05-14 | 2015-12-22 | LuxVue Technology Corporation | Stabilization structure including shear release posts |
| US9136161B2 (en) | 2013-06-04 | 2015-09-15 | LuxVue Technology Corporation | Micro pick up array with compliant contact |
| ES2952036T3 (es) | 2013-06-12 | 2023-10-26 | Rohinni Inc | Teclado de retroiluminación con fuentes generadoras de luz depositadas |
| US8987765B2 (en) | 2013-06-17 | 2015-03-24 | LuxVue Technology Corporation | Reflective bank structure and method for integrating a light emitting device |
| US9111464B2 (en) | 2013-06-18 | 2015-08-18 | LuxVue Technology Corporation | LED display with wavelength conversion layer |
| US8928021B1 (en) | 2013-06-18 | 2015-01-06 | LuxVue Technology Corporation | LED light pipe |
| US9035279B2 (en) | 2013-07-08 | 2015-05-19 | LuxVue Technology Corporation | Micro device with stabilization post |
| US9296111B2 (en) | 2013-07-22 | 2016-03-29 | LuxVue Technology Corporation | Micro pick up array alignment encoder |
| US9087764B2 (en) | 2013-07-26 | 2015-07-21 | LuxVue Technology Corporation | Adhesive wafer bonding with controlled thickness variation |
| US9153548B2 (en) | 2013-09-16 | 2015-10-06 | Lux Vue Technology Corporation | Adhesive wafer bonding with sacrificial spacers for controlled thickness variation |
| CN103681995A (zh) * | 2013-12-10 | 2014-03-26 | 圆融光电科技有限公司 | Led芯片制备方法及led芯片 |
| US9367094B2 (en) | 2013-12-17 | 2016-06-14 | Apple Inc. | Display module and system applications |
| US9768345B2 (en) | 2013-12-20 | 2017-09-19 | Apple Inc. | LED with current injection confinement trench |
| US9450147B2 (en) | 2013-12-27 | 2016-09-20 | Apple Inc. | LED with internally confined current injection area |
| US9583466B2 (en) | 2013-12-27 | 2017-02-28 | Apple Inc. | Etch removal of current distribution layer for LED current confinement |
| US9542638B2 (en) | 2014-02-18 | 2017-01-10 | Apple Inc. | RFID tag and micro chip integration design |
| US9583533B2 (en) | 2014-03-13 | 2017-02-28 | Apple Inc. | LED device with embedded nanowire LEDs |
| US9522468B2 (en) | 2014-05-08 | 2016-12-20 | Apple Inc. | Mass transfer tool manipulator assembly with remote center of compliance |
| US9318475B2 (en) | 2014-05-15 | 2016-04-19 | LuxVue Technology Corporation | Flexible display and method of formation with sacrificial release layer |
| US9741286B2 (en) | 2014-06-03 | 2017-08-22 | Apple Inc. | Interactive display panel with emitting and sensing diodes |
| US9624100B2 (en) | 2014-06-12 | 2017-04-18 | Apple Inc. | Micro pick up array pivot mount with integrated strain sensing elements |
| US9425151B2 (en) | 2014-06-17 | 2016-08-23 | Apple Inc. | Compliant electrostatic transfer head with spring support layer |
| US9570002B2 (en) | 2014-06-17 | 2017-02-14 | Apple Inc. | Interactive display panel with IR diodes |
| US9419195B2 (en) * | 2014-07-27 | 2016-08-16 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode (LED) die having strap layer and method of fabrication |
| US9705432B2 (en) | 2014-09-30 | 2017-07-11 | Apple Inc. | Micro pick up array pivot mount design for strain amplification |
| US9828244B2 (en) | 2014-09-30 | 2017-11-28 | Apple Inc. | Compliant electrostatic transfer head with defined cavity |
| US9478583B2 (en) | 2014-12-08 | 2016-10-25 | Apple Inc. | Wearable display having an array of LEDs on a conformable silicon substrate |
| CN108770368B (zh) | 2016-01-15 | 2022-04-12 | 罗茵尼公司 | 透过设备上的罩盖进行背光照明的设备和方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040104390A1 (en) * | 2002-01-28 | 2004-06-03 | Masahiko Sano | Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element |
| US20060186418A1 (en) * | 2004-05-18 | 2006-08-24 | Edmond John A | External extraction light emitting diode based upon crystallographic faceted surfaces |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2684239B1 (fr) * | 1991-11-27 | 1994-03-04 | France Telecom | Procede de fabrication d'un guide d'onde optique planaire entierement a base de polymeres, et son utilisation dans un isolateur optique integre. |
| DE19640594B4 (de) | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
| EP2169733B1 (de) | 1997-09-29 | 2017-07-19 | OSRAM Opto Semiconductors GmbH | Halbleiterlichtquelle |
| US20020017652A1 (en) | 2000-08-08 | 2002-02-14 | Stefan Illek | Semiconductor chip for optoelectronics |
| JP4281232B2 (ja) * | 2000-08-31 | 2009-06-17 | ソニー株式会社 | 光記録媒体とその製造方法 |
| US6537870B1 (en) * | 2000-09-29 | 2003-03-25 | Infineon Technologies Ag | Method of forming an integrated circuit comprising a self aligned trench |
| US6740906B2 (en) | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
| EP1419526A2 (en) * | 2001-08-24 | 2004-05-19 | MCNC Research and Development Institute | Through-via vertical interconnects, through-via heat sinks and associated fabrication methods |
| US6784462B2 (en) | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
| DE10245628A1 (de) | 2002-09-30 | 2004-04-15 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung |
| KR100558134B1 (ko) | 2003-04-04 | 2006-03-10 | 삼성전기주식회사 | 질화 갈륨계 반도체 led 소자 |
| JP4295669B2 (ja) | 2003-05-22 | 2009-07-15 | パナソニック株式会社 | 半導体素子の製造方法 |
| JP4279631B2 (ja) | 2003-08-20 | 2009-06-17 | 三菱化学株式会社 | 窒化物系半導体素子の製造方法 |
| DE10340271B4 (de) | 2003-08-29 | 2019-01-17 | Osram Opto Semiconductors Gmbh | Dünnschicht-Leuchtdiodenchip und Verfahren zu seiner Herstellung |
| KR100997978B1 (ko) | 2004-02-25 | 2010-12-02 | 삼성전자주식회사 | 액정 표시 장치 |
| DE102005016592A1 (de) | 2004-04-14 | 2005-11-24 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
| US7332365B2 (en) | 2004-05-18 | 2008-02-19 | Cree, Inc. | Method for fabricating group-III nitride devices and devices fabricated using method |
| CN100442557C (zh) | 2004-06-30 | 2008-12-10 | 奥斯兰姆奥普托半导体有限责任公司 | 用于施加到ⅲ/ⅴ化合物半导体材料上的具有多个层的反射层系统 |
| DE102004040277B4 (de) | 2004-06-30 | 2015-07-30 | Osram Opto Semiconductors Gmbh | Reflektierendes Schichtsystem mit einer Mehrzahl von Schichten zur Aufbringung auf ein III/V-Verbindungshalbleitermaterial |
| US7403557B2 (en) | 2004-07-27 | 2008-07-22 | Nokia Corporation | Apparatus and method for hybrid traffic and pilot signal quality determination of finger lock status of rake receiver correlators |
| US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
| TWI389334B (zh) | 2004-11-15 | 2013-03-11 | Verticle Inc | 製造及分離半導體裝置之方法 |
| JP2006190854A (ja) | 2005-01-07 | 2006-07-20 | Sony Corp | 発光ダイオード |
| JP2006269807A (ja) | 2005-03-24 | 2006-10-05 | Sony Corp | 半導体発光ダイオード |
| DE102005033005A1 (de) | 2005-07-14 | 2007-01-18 | Osram Opto Semiconductors Gmbh | Optoelektronischer Chip |
| JP5189734B2 (ja) * | 2006-01-24 | 2013-04-24 | ローム株式会社 | 窒化物半導体発光素子 |
| US7573074B2 (en) | 2006-05-19 | 2009-08-11 | Bridgelux, Inc. | LED electrode |
| DE102007021009A1 (de) * | 2006-09-27 | 2008-04-10 | Osram Opto Semiconductors Gmbh | Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen |
| JP2008130799A (ja) | 2006-11-21 | 2008-06-05 | Sharp Corp | 半導体発光素子および半導体発光素子の製造方法 |
| EP2208239A1 (en) * | 2007-10-11 | 2010-07-21 | Jie Yao | Photo-detector array and semiconductor image intensifier |
-
2008
- 2008-10-06 DE DE102008050538.2A patent/DE102008050538B4/de active Active
-
2009
- 2009-06-01 TW TW098117960A patent/TWI396304B/zh active
- 2009-06-03 WO PCT/DE2009/000781 patent/WO2009146689A1/de not_active Ceased
- 2009-06-03 CN CN200980121115.3A patent/CN102057505B/zh active Active
- 2009-06-03 US US12/996,622 patent/US10128405B2/en active Active
- 2009-06-03 KR KR1020117000175A patent/KR20110019416A/ko not_active Ceased
- 2009-06-03 EP EP09757123.6A patent/EP2289113B1/de active Active
- 2009-06-03 JP JP2011511971A patent/JP2011522427A/ja active Pending
-
2018
- 2018-07-20 US US16/041,343 patent/US11222992B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040104390A1 (en) * | 2002-01-28 | 2004-06-03 | Masahiko Sano | Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element |
| US20060186418A1 (en) * | 2004-05-18 | 2006-08-24 | Edmond John A | External extraction light emitting diode based upon crystallographic faceted surfaces |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2289113B1 (de) | 2020-04-08 |
| CN102057505B (zh) | 2015-04-22 |
| KR20110019416A (ko) | 2011-02-25 |
| US10128405B2 (en) | 2018-11-13 |
| TW201006016A (en) | 2010-02-01 |
| CN102057505A (zh) | 2011-05-11 |
| DE102008050538A1 (de) | 2010-02-11 |
| US20110210357A1 (en) | 2011-09-01 |
| JP2011522427A (ja) | 2011-07-28 |
| EP2289113A1 (de) | 2011-03-02 |
| WO2009146689A1 (de) | 2009-12-10 |
| DE102008050538B4 (de) | 2022-10-06 |
| US20180331254A1 (en) | 2018-11-15 |
| US11222992B2 (en) | 2022-01-11 |
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