TWI396304B - 光電組件及其製造方法 - Google Patents

光電組件及其製造方法 Download PDF

Info

Publication number
TWI396304B
TWI396304B TW098117960A TW98117960A TWI396304B TW I396304 B TWI396304 B TW I396304B TW 098117960 A TW098117960 A TW 098117960A TW 98117960 A TW98117960 A TW 98117960A TW I396304 B TWI396304 B TW I396304B
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor layer
manufacturing
steps
structured
Prior art date
Application number
TW098117960A
Other languages
English (en)
Chinese (zh)
Other versions
TW201006016A (en
Inventor
史蒂芬 凱薩
安德烈斯 布羅塞
Original Assignee
歐斯朗奧托半導體股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 歐斯朗奧托半導體股份有限公司 filed Critical 歐斯朗奧托半導體股份有限公司
Publication of TW201006016A publication Critical patent/TW201006016A/zh
Application granted granted Critical
Publication of TWI396304B publication Critical patent/TWI396304B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018Bonding of wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/832Electrodes characterised by their material
    • H10H20/835Reflective materials

Landscapes

  • Led Devices (AREA)
TW098117960A 2008-06-06 2009-06-01 光電組件及其製造方法 TWI396304B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008027041 2008-06-06
DE102008050538.2A DE102008050538B4 (de) 2008-06-06 2008-10-06 Optoelektronisches Bauelement und Verfahren zu dessen Herstellung

Publications (2)

Publication Number Publication Date
TW201006016A TW201006016A (en) 2010-02-01
TWI396304B true TWI396304B (zh) 2013-05-11

Family

ID=41129335

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098117960A TWI396304B (zh) 2008-06-06 2009-06-01 光電組件及其製造方法

Country Status (8)

Country Link
US (2) US10128405B2 (enExample)
EP (1) EP2289113B1 (enExample)
JP (1) JP2011522427A (enExample)
KR (1) KR20110019416A (enExample)
CN (1) CN102057505B (enExample)
DE (1) DE102008050538B4 (enExample)
TW (1) TWI396304B (enExample)
WO (1) WO2009146689A1 (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008026839A1 (de) 2007-12-20 2009-07-02 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements in Dünnschichttechnik
DE102009058006B4 (de) * 2009-12-11 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
TWI420155B (zh) * 2010-06-11 2013-12-21 Au Optronics Corp 光學模組及顯示裝置之製造方法
DE102011054891B4 (de) 2011-10-28 2017-10-19 Osram Opto Semiconductors Gmbh Verfahren zum Durchtrennen eines Halbleiterbauelementverbunds
US8349116B1 (en) 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US8573469B2 (en) 2011-11-18 2013-11-05 LuxVue Technology Corporation Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
US8646505B2 (en) 2011-11-18 2014-02-11 LuxVue Technology Corporation Micro device transfer head
US8518204B2 (en) 2011-11-18 2013-08-27 LuxVue Technology Corporation Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
US8794501B2 (en) 2011-11-18 2014-08-05 LuxVue Technology Corporation Method of transferring a light emitting diode
US9773750B2 (en) 2012-02-09 2017-09-26 Apple Inc. Method of transferring and bonding an array of micro devices
US9548332B2 (en) 2012-04-27 2017-01-17 Apple Inc. Method of forming a micro LED device with self-aligned metallization stack
US9105492B2 (en) 2012-05-08 2015-08-11 LuxVue Technology Corporation Compliant micro device transfer head
US8415768B1 (en) 2012-07-06 2013-04-09 LuxVue Technology Corporation Compliant monopolar micro device transfer head with silicon electrode
US8791530B2 (en) 2012-09-06 2014-07-29 LuxVue Technology Corporation Compliant micro device transfer head with integrated electrode leads
US9162880B2 (en) 2012-09-07 2015-10-20 LuxVue Technology Corporation Mass transfer tool
US9558721B2 (en) 2012-10-15 2017-01-31 Apple Inc. Content-based adaptive refresh schemes for low-power displays
DE102012111358A1 (de) * 2012-11-23 2014-05-28 Osram Opto Semiconductors Gmbh Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip
US9236815B2 (en) 2012-12-10 2016-01-12 LuxVue Technology Corporation Compliant micro device transfer head array with metal electrodes
US9923118B2 (en) * 2013-02-25 2018-03-20 Sensor Electronic Technology, Inc. Semiconductor structure with inhomogeneous regions
US9484504B2 (en) 2013-05-14 2016-11-01 Apple Inc. Micro LED with wavelength conversion layer
US9217541B2 (en) 2013-05-14 2015-12-22 LuxVue Technology Corporation Stabilization structure including shear release posts
US9136161B2 (en) 2013-06-04 2015-09-15 LuxVue Technology Corporation Micro pick up array with compliant contact
ES2952036T3 (es) 2013-06-12 2023-10-26 Rohinni Inc Teclado de retroiluminación con fuentes generadoras de luz depositadas
US8987765B2 (en) 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
US8928021B1 (en) 2013-06-18 2015-01-06 LuxVue Technology Corporation LED light pipe
US9035279B2 (en) 2013-07-08 2015-05-19 LuxVue Technology Corporation Micro device with stabilization post
US9296111B2 (en) 2013-07-22 2016-03-29 LuxVue Technology Corporation Micro pick up array alignment encoder
US9087764B2 (en) 2013-07-26 2015-07-21 LuxVue Technology Corporation Adhesive wafer bonding with controlled thickness variation
US9153548B2 (en) 2013-09-16 2015-10-06 Lux Vue Technology Corporation Adhesive wafer bonding with sacrificial spacers for controlled thickness variation
CN103681995A (zh) * 2013-12-10 2014-03-26 圆融光电科技有限公司 Led芯片制备方法及led芯片
US9367094B2 (en) 2013-12-17 2016-06-14 Apple Inc. Display module and system applications
US9768345B2 (en) 2013-12-20 2017-09-19 Apple Inc. LED with current injection confinement trench
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
US9583466B2 (en) 2013-12-27 2017-02-28 Apple Inc. Etch removal of current distribution layer for LED current confinement
US9542638B2 (en) 2014-02-18 2017-01-10 Apple Inc. RFID tag and micro chip integration design
US9583533B2 (en) 2014-03-13 2017-02-28 Apple Inc. LED device with embedded nanowire LEDs
US9522468B2 (en) 2014-05-08 2016-12-20 Apple Inc. Mass transfer tool manipulator assembly with remote center of compliance
US9318475B2 (en) 2014-05-15 2016-04-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
US9741286B2 (en) 2014-06-03 2017-08-22 Apple Inc. Interactive display panel with emitting and sensing diodes
US9624100B2 (en) 2014-06-12 2017-04-18 Apple Inc. Micro pick up array pivot mount with integrated strain sensing elements
US9425151B2 (en) 2014-06-17 2016-08-23 Apple Inc. Compliant electrostatic transfer head with spring support layer
US9570002B2 (en) 2014-06-17 2017-02-14 Apple Inc. Interactive display panel with IR diodes
US9419195B2 (en) * 2014-07-27 2016-08-16 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) die having strap layer and method of fabrication
US9705432B2 (en) 2014-09-30 2017-07-11 Apple Inc. Micro pick up array pivot mount design for strain amplification
US9828244B2 (en) 2014-09-30 2017-11-28 Apple Inc. Compliant electrostatic transfer head with defined cavity
US9478583B2 (en) 2014-12-08 2016-10-25 Apple Inc. Wearable display having an array of LEDs on a conformable silicon substrate
CN108770368B (zh) 2016-01-15 2022-04-12 罗茵尼公司 透过设备上的罩盖进行背光照明的设备和方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040104390A1 (en) * 2002-01-28 2004-06-03 Masahiko Sano Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element
US20060186418A1 (en) * 2004-05-18 2006-08-24 Edmond John A External extraction light emitting diode based upon crystallographic faceted surfaces

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2684239B1 (fr) * 1991-11-27 1994-03-04 France Telecom Procede de fabrication d'un guide d'onde optique planaire entierement a base de polymeres, et son utilisation dans un isolateur optique integre.
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
EP2169733B1 (de) 1997-09-29 2017-07-19 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
JP4281232B2 (ja) * 2000-08-31 2009-06-17 ソニー株式会社 光記録媒体とその製造方法
US6537870B1 (en) * 2000-09-29 2003-03-25 Infineon Technologies Ag Method of forming an integrated circuit comprising a self aligned trench
US6740906B2 (en) 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
EP1419526A2 (en) * 2001-08-24 2004-05-19 MCNC Research and Development Institute Through-via vertical interconnects, through-via heat sinks and associated fabrication methods
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
DE10245628A1 (de) 2002-09-30 2004-04-15 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung
KR100558134B1 (ko) 2003-04-04 2006-03-10 삼성전기주식회사 질화 갈륨계 반도체 led 소자
JP4295669B2 (ja) 2003-05-22 2009-07-15 パナソニック株式会社 半導体素子の製造方法
JP4279631B2 (ja) 2003-08-20 2009-06-17 三菱化学株式会社 窒化物系半導体素子の製造方法
DE10340271B4 (de) 2003-08-29 2019-01-17 Osram Opto Semiconductors Gmbh Dünnschicht-Leuchtdiodenchip und Verfahren zu seiner Herstellung
KR100997978B1 (ko) 2004-02-25 2010-12-02 삼성전자주식회사 액정 표시 장치
DE102005016592A1 (de) 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
US7332365B2 (en) 2004-05-18 2008-02-19 Cree, Inc. Method for fabricating group-III nitride devices and devices fabricated using method
CN100442557C (zh) 2004-06-30 2008-12-10 奥斯兰姆奥普托半导体有限责任公司 用于施加到ⅲ/ⅴ化合物半导体材料上的具有多个层的反射层系统
DE102004040277B4 (de) 2004-06-30 2015-07-30 Osram Opto Semiconductors Gmbh Reflektierendes Schichtsystem mit einer Mehrzahl von Schichten zur Aufbringung auf ein III/V-Verbindungshalbleitermaterial
US7403557B2 (en) 2004-07-27 2008-07-22 Nokia Corporation Apparatus and method for hybrid traffic and pilot signal quality determination of finger lock status of rake receiver correlators
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
TWI389334B (zh) 2004-11-15 2013-03-11 Verticle Inc 製造及分離半導體裝置之方法
JP2006190854A (ja) 2005-01-07 2006-07-20 Sony Corp 発光ダイオード
JP2006269807A (ja) 2005-03-24 2006-10-05 Sony Corp 半導体発光ダイオード
DE102005033005A1 (de) 2005-07-14 2007-01-18 Osram Opto Semiconductors Gmbh Optoelektronischer Chip
JP5189734B2 (ja) * 2006-01-24 2013-04-24 ローム株式会社 窒化物半導体発光素子
US7573074B2 (en) 2006-05-19 2009-08-11 Bridgelux, Inc. LED electrode
DE102007021009A1 (de) * 2006-09-27 2008-04-10 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen
JP2008130799A (ja) 2006-11-21 2008-06-05 Sharp Corp 半導体発光素子および半導体発光素子の製造方法
EP2208239A1 (en) * 2007-10-11 2010-07-21 Jie Yao Photo-detector array and semiconductor image intensifier

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040104390A1 (en) * 2002-01-28 2004-06-03 Masahiko Sano Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element
US20060186418A1 (en) * 2004-05-18 2006-08-24 Edmond John A External extraction light emitting diode based upon crystallographic faceted surfaces

Also Published As

Publication number Publication date
EP2289113B1 (de) 2020-04-08
CN102057505B (zh) 2015-04-22
KR20110019416A (ko) 2011-02-25
US10128405B2 (en) 2018-11-13
TW201006016A (en) 2010-02-01
CN102057505A (zh) 2011-05-11
DE102008050538A1 (de) 2010-02-11
US20110210357A1 (en) 2011-09-01
JP2011522427A (ja) 2011-07-28
EP2289113A1 (de) 2011-03-02
WO2009146689A1 (de) 2009-12-10
DE102008050538B4 (de) 2022-10-06
US20180331254A1 (en) 2018-11-15
US11222992B2 (en) 2022-01-11

Similar Documents

Publication Publication Date Title
TWI396304B (zh) 光電組件及其製造方法
JP5362704B2 (ja) オプトエレクトロニクス半導体ボディおよびその製造方法
US8420502B2 (en) Group III-V semiconductor device and method for producing the same
TWI502769B (zh) 晶圓級發光二極體結構、發光二極體晶片及其製造方法
US12015107B2 (en) Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
US20150255685A1 (en) Method for producing an optoelectronic component
US20160093769A1 (en) Light-emitting diode with passivation layer
CN106062976B (zh) 用于制造半导体器件的方法和半导体器件
CN101601144B (zh) 光电半导体芯片以及用于制造此类芯片的接触结构的方法
KR20140121608A (ko) 발광 다이오드의 반사전극, 이를 포함하는 발광 다이오드 칩, 및 이들의 제조방법들
TWI466327B (zh) 晶圓級發光二極體結構之製造方法
US20090026486A1 (en) Nitride based compound semiconductor light emitting device and method of manufacturing the same
TWI625870B (zh) 製造半導體發光裝置的方法
CN103681982A (zh) 发光二极管的制作方法
CN102124580B (zh) 光电子器件及其制造方法
JP7295924B2 (ja) 半導体発光素子および半導体発光素子の製造方法
US8878218B2 (en) Semiconductor light-emitting device and method for manufacturing the same
KR101210391B1 (ko) 광소자 패키지, 광소자 패키지용 기판 및 이의 제조방법
US10622508B2 (en) Method for manufacturing an optoelectronic component, and optoelectronic component
KR101337613B1 (ko) 발광소자와 그 제조방법