KR20110019416A - 광전 소자 및 그 제조 방법 - Google Patents

광전 소자 및 그 제조 방법 Download PDF

Info

Publication number
KR20110019416A
KR20110019416A KR1020117000175A KR20117000175A KR20110019416A KR 20110019416 A KR20110019416 A KR 20110019416A KR 1020117000175 A KR1020117000175 A KR 1020117000175A KR 20117000175 A KR20117000175 A KR 20117000175A KR 20110019416 A KR20110019416 A KR 20110019416A
Authority
KR
South Korea
Prior art keywords
layer
semiconductor layer
mesa
semiconductor
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020117000175A
Other languages
English (en)
Korean (ko)
Inventor
스테판 카이저
안드레아스 플로슬
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20110019416A publication Critical patent/KR20110019416A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018Bonding of wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/832Electrodes characterised by their material
    • H10H20/835Reflective materials

Landscapes

  • Led Devices (AREA)
KR1020117000175A 2008-06-06 2009-06-03 광전 소자 및 그 제조 방법 Ceased KR20110019416A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102008027041.5 2008-06-06
DE102008027041 2008-06-06
DE102008050538.2A DE102008050538B4 (de) 2008-06-06 2008-10-06 Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102008050538.2 2008-10-06

Publications (1)

Publication Number Publication Date
KR20110019416A true KR20110019416A (ko) 2011-02-25

Family

ID=41129335

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117000175A Ceased KR20110019416A (ko) 2008-06-06 2009-06-03 광전 소자 및 그 제조 방법

Country Status (8)

Country Link
US (2) US10128405B2 (enExample)
EP (1) EP2289113B1 (enExample)
JP (1) JP2011522427A (enExample)
KR (1) KR20110019416A (enExample)
CN (1) CN102057505B (enExample)
DE (1) DE102008050538B4 (enExample)
TW (1) TWI396304B (enExample)
WO (1) WO2009146689A1 (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008026839A1 (de) 2007-12-20 2009-07-02 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements in Dünnschichttechnik
DE102009058006B4 (de) 2009-12-11 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
TWI420155B (zh) * 2010-06-11 2013-12-21 Au Optronics Corp 光學模組及顯示裝置之製造方法
DE102011054891B4 (de) 2011-10-28 2017-10-19 Osram Opto Semiconductors Gmbh Verfahren zum Durchtrennen eines Halbleiterbauelementverbunds
US8573469B2 (en) 2011-11-18 2013-11-05 LuxVue Technology Corporation Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
US8333860B1 (en) 2011-11-18 2012-12-18 LuxVue Technology Corporation Method of transferring a micro device
US8349116B1 (en) 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US8518204B2 (en) 2011-11-18 2013-08-27 LuxVue Technology Corporation Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
US8809875B2 (en) * 2011-11-18 2014-08-19 LuxVue Technology Corporation Micro light emitting diode
US9773750B2 (en) 2012-02-09 2017-09-26 Apple Inc. Method of transferring and bonding an array of micro devices
US9548332B2 (en) 2012-04-27 2017-01-17 Apple Inc. Method of forming a micro LED device with self-aligned metallization stack
US9105492B2 (en) 2012-05-08 2015-08-11 LuxVue Technology Corporation Compliant micro device transfer head
US8415768B1 (en) 2012-07-06 2013-04-09 LuxVue Technology Corporation Compliant monopolar micro device transfer head with silicon electrode
US8791530B2 (en) 2012-09-06 2014-07-29 LuxVue Technology Corporation Compliant micro device transfer head with integrated electrode leads
US9162880B2 (en) 2012-09-07 2015-10-20 LuxVue Technology Corporation Mass transfer tool
US9558721B2 (en) 2012-10-15 2017-01-31 Apple Inc. Content-based adaptive refresh schemes for low-power displays
DE102012111358A1 (de) * 2012-11-23 2014-05-28 Osram Opto Semiconductors Gmbh Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip
US9236815B2 (en) 2012-12-10 2016-01-12 LuxVue Technology Corporation Compliant micro device transfer head array with metal electrodes
US9923118B2 (en) * 2013-02-25 2018-03-20 Sensor Electronic Technology, Inc. Semiconductor structure with inhomogeneous regions
US9484504B2 (en) 2013-05-14 2016-11-01 Apple Inc. Micro LED with wavelength conversion layer
US9217541B2 (en) 2013-05-14 2015-12-22 LuxVue Technology Corporation Stabilization structure including shear release posts
US9136161B2 (en) 2013-06-04 2015-09-15 LuxVue Technology Corporation Micro pick up array with compliant contact
KR102049635B1 (ko) 2013-06-12 2019-11-28 로히니, 엘엘씨. 피착된 광-생성 소스에 의한 키보드 백라이팅
US8987765B2 (en) 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
US8928021B1 (en) 2013-06-18 2015-01-06 LuxVue Technology Corporation LED light pipe
US9035279B2 (en) 2013-07-08 2015-05-19 LuxVue Technology Corporation Micro device with stabilization post
US9296111B2 (en) 2013-07-22 2016-03-29 LuxVue Technology Corporation Micro pick up array alignment encoder
US9087764B2 (en) 2013-07-26 2015-07-21 LuxVue Technology Corporation Adhesive wafer bonding with controlled thickness variation
US9153548B2 (en) 2013-09-16 2015-10-06 Lux Vue Technology Corporation Adhesive wafer bonding with sacrificial spacers for controlled thickness variation
CN103681995A (zh) * 2013-12-10 2014-03-26 圆融光电科技有限公司 Led芯片制备方法及led芯片
US9367094B2 (en) 2013-12-17 2016-06-14 Apple Inc. Display module and system applications
US9768345B2 (en) 2013-12-20 2017-09-19 Apple Inc. LED with current injection confinement trench
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
US9583466B2 (en) 2013-12-27 2017-02-28 Apple Inc. Etch removal of current distribution layer for LED current confinement
US9542638B2 (en) 2014-02-18 2017-01-10 Apple Inc. RFID tag and micro chip integration design
US9583533B2 (en) 2014-03-13 2017-02-28 Apple Inc. LED device with embedded nanowire LEDs
US9522468B2 (en) 2014-05-08 2016-12-20 Apple Inc. Mass transfer tool manipulator assembly with remote center of compliance
US9318475B2 (en) 2014-05-15 2016-04-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
US9741286B2 (en) 2014-06-03 2017-08-22 Apple Inc. Interactive display panel with emitting and sensing diodes
US9624100B2 (en) 2014-06-12 2017-04-18 Apple Inc. Micro pick up array pivot mount with integrated strain sensing elements
US9425151B2 (en) 2014-06-17 2016-08-23 Apple Inc. Compliant electrostatic transfer head with spring support layer
US9570002B2 (en) 2014-06-17 2017-02-14 Apple Inc. Interactive display panel with IR diodes
US9419195B2 (en) 2014-07-27 2016-08-16 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) die having strap layer and method of fabrication
US9705432B2 (en) 2014-09-30 2017-07-11 Apple Inc. Micro pick up array pivot mount design for strain amplification
US9828244B2 (en) 2014-09-30 2017-11-28 Apple Inc. Compliant electrostatic transfer head with defined cavity
US9478583B2 (en) 2014-12-08 2016-10-25 Apple Inc. Wearable display having an array of LEDs on a conformable silicon substrate
WO2017124109A1 (en) 2016-01-15 2017-07-20 Rohinni, LLC Apparatus and method of backlighting through a cover on the apparatus

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2684239B1 (fr) * 1991-11-27 1994-03-04 France Telecom Procede de fabrication d'un guide d'onde optique planaire entierement a base de polymeres, et son utilisation dans un isolateur optique integre.
DE19640594B4 (de) * 1996-10-01 2016-08-04 Osram Gmbh Bauelement
EP2169733B1 (de) 1997-09-29 2017-07-19 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
JP4281232B2 (ja) * 2000-08-31 2009-06-17 ソニー株式会社 光記録媒体とその製造方法
US6537870B1 (en) * 2000-09-29 2003-03-25 Infineon Technologies Ag Method of forming an integrated circuit comprising a self aligned trench
US6740906B2 (en) 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
EP1419526A2 (en) * 2001-08-24 2004-05-19 MCNC Research and Development Institute Through-via vertical interconnects, through-via heat sinks and associated fabrication methods
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
ATE445233T1 (de) 2002-01-28 2009-10-15 Nichia Corp Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung
DE10245628A1 (de) * 2002-09-30 2004-04-15 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung
KR100558134B1 (ko) 2003-04-04 2006-03-10 삼성전기주식회사 질화 갈륨계 반도체 led 소자
JP4295669B2 (ja) * 2003-05-22 2009-07-15 パナソニック株式会社 半導体素子の製造方法
JP4279631B2 (ja) 2003-08-20 2009-06-17 三菱化学株式会社 窒化物系半導体素子の製造方法
DE10340271B4 (de) * 2003-08-29 2019-01-17 Osram Opto Semiconductors Gmbh Dünnschicht-Leuchtdiodenchip und Verfahren zu seiner Herstellung
KR100997978B1 (ko) 2004-02-25 2010-12-02 삼성전자주식회사 액정 표시 장치
DE102005016592A1 (de) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
US7332365B2 (en) 2004-05-18 2008-02-19 Cree, Inc. Method for fabricating group-III nitride devices and devices fabricated using method
US7791061B2 (en) * 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
DE102004040277B4 (de) 2004-06-30 2015-07-30 Osram Opto Semiconductors Gmbh Reflektierendes Schichtsystem mit einer Mehrzahl von Schichten zur Aufbringung auf ein III/V-Verbindungshalbleitermaterial
CN100442557C (zh) * 2004-06-30 2008-12-10 奥斯兰姆奥普托半导体有限责任公司 用于施加到ⅲ/ⅴ化合物半导体材料上的具有多个层的反射层系统
US7403557B2 (en) 2004-07-27 2008-07-22 Nokia Corporation Apparatus and method for hybrid traffic and pilot signal quality determination of finger lock status of rake receiver correlators
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
TWI389334B (zh) 2004-11-15 2013-03-11 Verticle Inc 製造及分離半導體裝置之方法
JP2006190854A (ja) 2005-01-07 2006-07-20 Sony Corp 発光ダイオード
JP2006269807A (ja) 2005-03-24 2006-10-05 Sony Corp 半導体発光ダイオード
DE102005033005A1 (de) * 2005-07-14 2007-01-18 Osram Opto Semiconductors Gmbh Optoelektronischer Chip
JP5189734B2 (ja) * 2006-01-24 2013-04-24 ローム株式会社 窒化物半導体発光素子
US7573074B2 (en) 2006-05-19 2009-08-11 Bridgelux, Inc. LED electrode
DE102007021009A1 (de) * 2006-09-27 2008-04-10 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen
JP2008130799A (ja) 2006-11-21 2008-06-05 Sharp Corp 半導体発光素子および半導体発光素子の製造方法
JP2011501415A (ja) * 2007-10-11 2011-01-06 ヤオ ジエ フォトディテクタアレイおよび半導体イメージインテンシファイア

Also Published As

Publication number Publication date
DE102008050538B4 (de) 2022-10-06
US20110210357A1 (en) 2011-09-01
WO2009146689A1 (de) 2009-12-10
CN102057505A (zh) 2011-05-11
US20180331254A1 (en) 2018-11-15
DE102008050538A1 (de) 2010-02-11
TWI396304B (zh) 2013-05-11
TW201006016A (en) 2010-02-01
CN102057505B (zh) 2015-04-22
EP2289113B1 (de) 2020-04-08
US11222992B2 (en) 2022-01-11
JP2011522427A (ja) 2011-07-28
EP2289113A1 (de) 2011-03-02
US10128405B2 (en) 2018-11-13

Similar Documents

Publication Publication Date Title
KR20110019416A (ko) 광전 소자 및 그 제조 방법
JP5362704B2 (ja) オプトエレクトロニクス半導体ボディおよびその製造方法
US8039864B2 (en) Semiconductor light emitting device and fabrication method for the same
EP2139052B1 (en) Semiconductor light-emitting device and method for manufacturing the same
US8178372B2 (en) Method for production of a plurality of semiconductor chips, and a semiconductor component
US20150255685A1 (en) Method for producing an optoelectronic component
CN103430330B (zh) 用于制造至少一个光电子半导体芯片的方法
US20120018763A1 (en) Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip
US20090218587A1 (en) Radiation-Emitting Semiconductor Body with Carrier Substrate and Method for the Production thereof
KR20110082540A (ko) 광전 반도체 소자의 제조 방법 및 광전 반도체 소자
CN103069568A (zh) 光电子半导体芯片和用于制造光电子半导体芯片的方法
KR101527261B1 (ko) 광전 소자의 제조 방법, 광전 소자, 및 복수 개의 광전 소자를 포함하는 소자 장치
KR20080051150A (ko) 반도체 웨이퍼를 측면으로 절단하는 방법 및 광전 소자
US20150325742A1 (en) Method of fabricating semiconductor devices
JP6447018B2 (ja) 発光装置及び発光装置の製造方法
US20090026486A1 (en) Nitride based compound semiconductor light emitting device and method of manufacturing the same
US9099574B2 (en) Optoelectronic semiconductor chip and method for producing it
US10232471B2 (en) Method for dividing a composite into semiconductor chips, and semiconductor chip
JP2019054277A (ja) 発光装置及び発光装置の製造方法
US8878218B2 (en) Semiconductor light-emitting device and method for manufacturing the same
KR101210391B1 (ko) 광소자 패키지, 광소자 패키지용 기판 및 이의 제조방법

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20110104

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
AMND Amendment
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20140513

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20150921

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20160923

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20150921

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

Patent event date: 20161026

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20160923

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Appeal identifier: 2016101006119

Request date: 20161026

PB0901 Examination by re-examination before a trial

Comment text: Amendment to Specification, etc.

Patent event date: 20161026

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20161026

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20160321

Patent event code: PB09011R02I

Comment text: Amendment to Specification, etc.

Patent event date: 20140513

Patent event code: PB09011R02I

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20161214

Patent event code: PE09021S01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20170619

Patent event code: PE09021S01D

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial
J301 Trial decision

Free format text: TRIAL NUMBER: 2016101006119; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20161026

Effective date: 20180614

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20180614

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20161026

Decision date: 20180614

Appeal identifier: 2016101006119