JP6738802B2 - 電子デバイスおよび電子デバイスの製造方法 - Google Patents
電子デバイスおよび電子デバイスの製造方法 Download PDFInfo
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Description
1.実施の形態(選択的な素子部を移載する際のレーザアブレーション用の剥離層として、ガラス転移点と熱分解温度との差が150度以下となる樹脂を用いた電子デバイスの例)
・構成
・製造方法
・作用、効果
2.変形例1(複数の素子部を貼り合わせ後に剥離して移載する場合の例)
[構成]
図1は、本開示の一実施の形態に係る電子デバイス(電子デバイス1)の構成を模式的に表したものである。図2は、素子部10上に形態された樹脂層22aの構成を模式的に表したものである。電子デバイス1は、第1基板11上に、接着層12を介して複数の素子部10が配置されたものである。この電子デバイス1は、例えばLEDディスプレイなどの表示装置、または固体撮像装置などである。
電子デバイス1は、例えば次のようにして形成することができる。図3A〜図7は、素子部10Aの形成方法を説明するための模式図である。
本実施の形態では、電子デバイス1の製造プロセスにおいて、第1基板11上に素子部10を移載する際に、レーザアブレーションされる剥離層22が、ガラス転移点と熱分解温度との差が所定の温度以下となる樹脂により構成されている。このような構成により、次のような効果がある。
上記実施の形態では、第1基板11上の複数の素子部10のうちの選択的な素子部10(10a)を他の基板(第2基板21)から移載する手法について述べたが、上述したような樹脂を用いたレーザアブレーションは、他のプロセスにも適用することができる。例えば、本変形例のように、素子部10を貼り合わせ後に剥離して移載する際の剥離層に上述した樹脂が用いられてもよい。尚、上記実施の形態と同様の構成要素については同一の符号を付し、その説明を省略する。
(1)
第1基板上に配置された1または複数の素子部と、
各素子部上の少なくとも一部に形成された樹脂層と
を備え、
前記樹脂層は、ガラス転移点と熱分解温度との差が150度以下である樹脂から構成されている
電子デバイス。
(2)
前記樹脂に含まれる原子は、その酸化物、窒化物および炭化物における蒸気圧が大気圧以上である
上記(1)に記載の電子デバイス。
(3)
前記熱分解温度は350度以下である
上記(1)または(2)に記載の電子デバイス。
(4)
前記樹脂は、カルド構造をもつ高分子材料である
上記(1)ないし(3)のいずれか1つに記載の電子デバイス。
(5)
前記素子部が前記第1基板上に複数配置され、
前記素子部は発光素子または受光素子を含む
上記(1)ないし(4)のいずれか1つに記載の電子デバイス。
(6)
前記素子部は導電膜である
上記(1)ないし(5)のいずれか1つに記載の電子デバイス。
(7)
第1基板上に1または複数の素子部を第2基板から移載する際に、
前記1または複数の素子部のうちの一部または全部の素子部を、第2基板上に樹脂層を介して形成し、
前記第2基板上に形成された素子部を、前記樹脂層へのレーザ照射により前記第2基板から剥離して前記第1基板上に配置し、かつ
前記樹脂層として、ガラス転移点と熱分解温度との差が150度以下である樹脂を用いた
電子デバイスの製造方法。
(8)
前記樹脂に含まれる原子は、その酸化物、窒化物および炭化物における蒸気圧が大気圧
以上である
上記(7)に記載の電子デバイスの製造方法。
(9)
前記熱分解温度は350度以下である
上記(7)または(8)に記載の電子デバイスの製造方法。
(10)
前記複数の素子部のうちの一部の素子部に相当する第1素子部が、前記第2基板上に前記樹脂層を介して複数形成され、
前記第1素子部が複数形成された第2基板が、前記第1素子部を間にして前記第1基板に対向して配置され、
前記第2基板が前記第1基板に対向配置された後、前記複数の第1素子部のうちの選択的な第1素子部に対応する領域においてレーザ光が前記樹脂層に照射される
上記(7)ないし(9)のいずれか1つに記載の電子デバイスの製造方法。
(11)
前記レーザ光の照射後、前記第1素子部の上に形成された樹脂層を除去する
上記(10)に記載の電子デバイスの製造方法。
(12)
前記複数の素子部が、前記第2基板上に樹脂層を介して形成され、
前記複数の素子部が形成された第2基板が、前記複数の素子部を間にして前記第1基板に貼り合わせられ、
前記第2基板が前記第1基板に貼り合わせられた後、レーザ光が前記樹脂層に照射される
上記(7)ないし(11)のいずれか1つに記載の電子デバイスの製造方法。
(13)
前記レーザ光の照射後、前記素子部の上に形成された樹脂層を除去する
上記(12)に記載の電子デバイスの製造方法。
(14)
前記樹脂は、カルド構造をもつ高分子材料である
上記(7)ないし(13)のいずれか1つに記載の電子デバイスの製造方法。
(15)
前記素子部は発光素子または受光素子を含む
上記(7)ないし(14)のいずれか1つ記載の電子デバイスの製造方法。
(16)
前記素子部は導電膜である
上記(7)ないし(15)のいずれか1つに記載の電子デバイスの製造方法。
Claims (10)
- 第1基板上に1または複数の素子部を第2基板から移載する際に、
前記1または複数の素子部のうちの一部または全部の素子部を、第2基板上に樹脂層を介して形成し、
前記第2基板上に形成された素子部を、前記樹脂層へのレーザ照射により前記第2基板から剥離して前記第1基板上に配置し、かつ
前記樹脂層として、ガラス転移点と熱分解温度との差が150度以下である樹脂を用いた
電子デバイスの製造方法。 - 前記樹脂に含まれる原子は、その酸化物、窒化物および炭化物における蒸気圧が大気圧以上である
請求項1に記載の電子デバイスの製造方法。 - 前記熱分解温度は350度以下である
請求項1または請求項2に記載の電子デバイスの製造方法。 - 前記複数の素子部のうちの一部の素子部に相当する第1素子部が、前記第2基板上に前記樹脂層を介して複数形成され、
前記第1素子部が複数形成された第2基板が、前記第1素子部を間にして前記第1基板に対向して配置され、
前記第2基板が前記第1基板に対向配置された後、前記複数の第1素子部のうちの選択的な第1素子部に対応する領域においてレーザ光が前記樹脂層に照射される
請求項1から請求項3のいずれか一項に記載の電子デバイスの製造方法。 - 前記レーザ光の照射後、前記第1素子部の上に形成された樹脂層を除去する
請求項4に記載の電子デバイスの製造方法。 - 前記複数の素子部が、前記第2基板上に樹脂層を介して形成され、
前記複数の素子部が形成された第2基板が、前記複数の素子部を間にして前記第1基板に貼り合わせられ、
前記第2基板が前記第1基板に貼り合わせられた後、レーザ光が前記樹脂層に照射される
請求項1から請求項5のいずれか一項に記載の電子デバイスの製造方法。 - 前記レーザ光の照射後、前記素子部の上に形成された樹脂層を除去する
請求項6に記載の電子デバイスの製造方法。 - 前記樹脂は、カルド構造をもつ高分子材料である
請求項1から請求項7のいずれか一項に記載の電子デバイスの製造方法。 - 前記素子部は発光素子または受光素子を含む
請求項1から請求項8のいずれか一項に記載の電子デバイスの製造方法。 - 前記素子部は導電膜である
請求項1から請求項9のいずれか一項に記載の電子デバイスの製造方法。
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