JP2004172568A5 - - Google Patents

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Publication number
JP2004172568A5
JP2004172568A5 JP2003273034A JP2003273034A JP2004172568A5 JP 2004172568 A5 JP2004172568 A5 JP 2004172568A5 JP 2003273034 A JP2003273034 A JP 2003273034A JP 2003273034 A JP2003273034 A JP 2003273034A JP 2004172568 A5 JP2004172568 A5 JP 2004172568A5
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JP
Japan
Prior art keywords
nitride semiconductor
semiconductor device
shape
polarity
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003273034A
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English (en)
Japanese (ja)
Other versions
JP2004172568A (ja
JP4895466B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2003273034A priority Critical patent/JP4895466B2/ja
Priority claimed from JP2003273034A external-priority patent/JP4895466B2/ja
Publication of JP2004172568A publication Critical patent/JP2004172568A/ja
Publication of JP2004172568A5 publication Critical patent/JP2004172568A5/ja
Application granted granted Critical
Publication of JP4895466B2 publication Critical patent/JP4895466B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003273034A 2002-10-29 2003-07-10 窒化物半導体素子およびその製造方法 Expired - Fee Related JP4895466B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003273034A JP4895466B2 (ja) 2002-10-29 2003-07-10 窒化物半導体素子およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002314231 2002-10-29
JP2002314231 2002-10-29
JP2003273034A JP4895466B2 (ja) 2002-10-29 2003-07-10 窒化物半導体素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2004172568A JP2004172568A (ja) 2004-06-17
JP2004172568A5 true JP2004172568A5 (enExample) 2006-08-17
JP4895466B2 JP4895466B2 (ja) 2012-03-14

Family

ID=32715759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003273034A Expired - Fee Related JP4895466B2 (ja) 2002-10-29 2003-07-10 窒化物半導体素子およびその製造方法

Country Status (1)

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JP (1) JP4895466B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179565A (ja) 2004-12-21 2006-07-06 Sony Corp 半導体レーザ素子
US8685764B2 (en) * 2005-01-11 2014-04-01 SemiLEDs Optoelectronics Co., Ltd. Method to make low resistance contact
US7606276B2 (en) 2005-05-19 2009-10-20 Panasonic Corporation Nitride semiconductor device and method for fabricating the same
JP5138873B2 (ja) 2005-05-19 2013-02-06 日亜化学工業株式会社 窒化物半導体素子
JP2007067209A (ja) * 2005-08-31 2007-03-15 Sanyo Electric Co Ltd 窒化物系半導体発光素子及びその製造方法
JP4605193B2 (ja) 2007-07-27 2011-01-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
JP2011103400A (ja) 2009-11-11 2011-05-26 Sumitomo Electric Ind Ltd 化合物半導体素子
JP5533093B2 (ja) * 2010-03-18 2014-06-25 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
CN102214762A (zh) * 2010-04-06 2011-10-12 尚安品有限公司 发光二极管芯片及其封装结构

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10335750A (ja) * 1997-06-03 1998-12-18 Sony Corp 半導体基板および半導体装置
JP3812356B2 (ja) * 2001-03-30 2006-08-23 松下電器産業株式会社 半導体発光素子およびその製造方法
JP4131101B2 (ja) * 2001-11-28 2008-08-13 日亜化学工業株式会社 窒化物半導体素子の製造方法

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