JP2007005813A5 - - Google Patents

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Publication number
JP2007005813A5
JP2007005813A5 JP2006174377A JP2006174377A JP2007005813A5 JP 2007005813 A5 JP2007005813 A5 JP 2007005813A5 JP 2006174377 A JP2006174377 A JP 2006174377A JP 2006174377 A JP2006174377 A JP 2006174377A JP 2007005813 A5 JP2007005813 A5 JP 2007005813A5
Authority
JP
Japan
Prior art keywords
light emitting
semiconductor light
emitting device
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006174377A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007005813A (ja
Filing date
Publication date
Priority claimed from TW094121291A external-priority patent/TWI291243B/zh
Application filed filed Critical
Publication of JP2007005813A publication Critical patent/JP2007005813A/ja
Publication of JP2007005813A5 publication Critical patent/JP2007005813A5/ja
Pending legal-status Critical Current

Links

JP2006174377A 2005-06-24 2006-06-23 半導体発光デバイス Pending JP2007005813A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094121291A TWI291243B (en) 2005-06-24 2005-06-24 A semiconductor light-emitting device

Publications (2)

Publication Number Publication Date
JP2007005813A JP2007005813A (ja) 2007-01-11
JP2007005813A5 true JP2007005813A5 (enExample) 2009-08-06

Family

ID=37545228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006174377A Pending JP2007005813A (ja) 2005-06-24 2006-06-23 半導体発光デバイス

Country Status (5)

Country Link
US (1) US20060289881A1 (enExample)
JP (1) JP2007005813A (enExample)
KR (1) KR101076159B1 (enExample)
DE (1) DE102006028644A1 (enExample)
TW (1) TWI291243B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007032638A1 (en) * 2005-09-15 2007-03-22 Epiplus Co., Ltd Arrangement of electrodes for light emitting device
US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
US7928451B2 (en) * 2006-08-18 2011-04-19 Sensor Electronic Technology, Inc. Shaped contact layer for light emitting heterostructure
TWI376817B (en) * 2007-11-23 2012-11-11 Epistar Corp Light emitting device, light source apparatus and backlight module
US8872204B2 (en) * 2007-11-23 2014-10-28 Epistar Corporation Light-emitting device having a trench in a semiconductor layer
KR20090073935A (ko) * 2007-12-31 2009-07-03 주식회사 에피밸리 3족 질화물 반도체 발광소자
JP2009253056A (ja) * 2008-04-07 2009-10-29 Showa Denko Kk Iii族窒化物半導体発光素子及びランプ
TWI394296B (zh) * 2008-09-09 2013-04-21 Bridgelux Inc 具改良式電極結構之發光元件
KR101000277B1 (ko) * 2008-12-04 2010-12-10 주식회사 에피밸리 반도체 발광소자
TWI470824B (zh) * 2009-04-09 2015-01-21 廣鎵光電股份有限公司 電極結構及其發光元件
JP2011023703A (ja) * 2009-06-17 2011-02-03 Sumitomo Electric Ind Ltd エピタキシャル基板、発光素子、発光装置およびエピタキシャル基板の製造方法
TWI499347B (zh) * 2009-12-31 2015-09-01 晶元光電股份有限公司 發光元件
JP2012142630A (ja) * 2012-04-27 2012-07-26 Hitachi Cable Ltd 発光装置
TWI635772B (zh) * 2013-10-15 2018-09-11 晶元光電股份有限公司 發光元件
TWI635773B (zh) * 2013-10-15 2018-09-11 晶元光電股份有限公司 發光元件
TWI699904B (zh) * 2017-07-31 2020-07-21 晶元光電股份有限公司 發光元件
CN111739878B (zh) * 2019-03-25 2022-05-24 群创光电股份有限公司 电子装置
CN112993115B (zh) * 2019-12-17 2022-12-27 深圳第三代半导体研究院 一种发光二极管

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69425186T3 (de) * 1993-04-28 2005-04-14 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
US6281524B1 (en) * 1997-02-21 2001-08-28 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
JP3740293B2 (ja) 1998-07-29 2006-02-01 京セラ株式会社 半導体発光装置
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
US6614056B1 (en) * 1999-12-01 2003-09-02 Cree Lighting Company Scalable led with improved current spreading structures
JP4810746B2 (ja) * 2000-03-31 2011-11-09 豊田合成株式会社 Iii族窒化物系化合物半導体素子
US6777805B2 (en) * 2000-03-31 2004-08-17 Toyoda Gosei Co., Ltd. Group-III nitride compound semiconductor device
JP2001339101A (ja) 2000-05-26 2001-12-07 Sharp Corp 窒化ガリウム系化合物半導体素子
JP2002319705A (ja) * 2001-04-23 2002-10-31 Matsushita Electric Works Ltd Led装置
TW516248B (en) * 2001-12-21 2003-01-01 Epitech Technology Corp Nitride light emitting diode with spiral-shaped metal electrode
TW567618B (en) * 2002-07-15 2003-12-21 Epistar Corp Light emitting diode with adhesive reflection layer and manufacturing method thereof
TW577184B (en) 2002-12-26 2004-02-21 Epistar Corp Light emitting layer having voltage/resistance interdependent layer
TWI288486B (en) * 2004-03-17 2007-10-11 Epistar Corp Light-emitting diode and method for manufacturing the same

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