JP2007005813A - 半導体発光デバイス - Google Patents

半導体発光デバイス Download PDF

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Publication number
JP2007005813A
JP2007005813A JP2006174377A JP2006174377A JP2007005813A JP 2007005813 A JP2007005813 A JP 2007005813A JP 2006174377 A JP2006174377 A JP 2006174377A JP 2006174377 A JP2006174377 A JP 2006174377A JP 2007005813 A JP2007005813 A JP 2007005813A
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JP
Japan
Prior art keywords
light emitting
emitting device
semiconductor light
electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006174377A
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English (en)
Japanese (ja)
Other versions
JP2007005813A5 (enExample
Inventor
Yen-Wen Chen
彦文 陳
Wen-Huang Liu
文煌 劉
Wei-Chih Peng
韋智 彭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of JP2007005813A publication Critical patent/JP2007005813A/ja
Publication of JP2007005813A5 publication Critical patent/JP2007005813A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

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  • Led Devices (AREA)
JP2006174377A 2005-06-24 2006-06-23 半導体発光デバイス Pending JP2007005813A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094121291A TWI291243B (en) 2005-06-24 2005-06-24 A semiconductor light-emitting device

Publications (2)

Publication Number Publication Date
JP2007005813A true JP2007005813A (ja) 2007-01-11
JP2007005813A5 JP2007005813A5 (enExample) 2009-08-06

Family

ID=37545228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006174377A Pending JP2007005813A (ja) 2005-06-24 2006-06-23 半導体発光デバイス

Country Status (5)

Country Link
US (1) US20060289881A1 (enExample)
JP (1) JP2007005813A (enExample)
KR (1) KR101076159B1 (enExample)
DE (1) DE102006028644A1 (enExample)
TW (1) TWI291243B (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009164572A (ja) * 2007-12-31 2009-07-23 Epivalley Co Ltd Ｉｉｉ族窒化物半導体発光素子
JP2009253056A (ja) * 2008-04-07 2009-10-29 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びランプ
JP2010529658A (ja) * 2007-05-30 2010-08-26 バーティクル，インク 発光ダイオードおよびその製造方法
WO2010147012A1 (ja) * 2009-06-17 2010-12-23 住友電気工業株式会社 エピタキシャル基板、発光素子、発光装置およびエピタキシャル基板の製造方法
JP2012511248A (ja) * 2008-12-04 2012-05-17 エピヴァレー カンパニー リミテッド 半導体発光素子
JP2012142630A (ja) * 2012-04-27 2012-07-26 Hitachi Cable Ltd 発光装置
JP2013150018A (ja) * 2008-09-09 2013-08-01 Bridgelux Inc 向上した電極構造を有する発光素子

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007032638A1 (en) * 2005-09-15 2007-03-22 Epiplus Co., Ltd Arrangement of electrodes for light emitting device
US7928451B2 (en) * 2006-08-18 2011-04-19 Sensor Electronic Technology, Inc. Shaped contact layer for light emitting heterostructure
TWI376817B (en) * 2007-11-23 2012-11-11 Epistar Corp Light emitting device, light source apparatus and backlight module
US8872204B2 (en) * 2007-11-23 2014-10-28 Epistar Corporation Light-emitting device having a trench in a semiconductor layer
TWI470824B (zh) * 2009-04-09 2015-01-21 廣鎵光電股份有限公司 電極結構及其發光元件
TWI499347B (zh) * 2009-12-31 2015-09-01 晶元光電股份有限公司 發光元件
TWI635772B (zh) * 2013-10-15 2018-09-11 晶元光電股份有限公司 發光元件
TWI635773B (zh) * 2013-10-15 2018-09-11 晶元光電股份有限公司 發光元件
TWI699904B (zh) * 2017-07-31 2020-07-21 晶元光電股份有限公司 發光元件
CN111739878B (zh) * 2019-03-25 2022-05-24 群创光电股份有限公司 电子装置
CN112993115B (zh) * 2019-12-17 2022-12-27 深圳第三代半导体研究院 一种发光二极管

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345480A (ja) * 2000-03-31 2001-12-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP2002319705A (ja) * 2001-04-23 2002-10-31 Matsushita Electric Works Ltd Ｌｅｄ装置
JP2004253763A (ja) * 2002-07-15 2004-09-09 Shogen Koden Kofun Yugenkoshi 接着層及び反射層を有する発光ダイオード及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69425186T3 (de) * 1993-04-28 2005-04-14 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
US6281524B1 (en) * 1997-02-21 2001-08-28 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
JP3740293B2 (ja) 1998-07-29 2006-02-01 京セラ株式会社 半導体発光装置
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
US6614056B1 (en) * 1999-12-01 2003-09-02 Cree Lighting Company Scalable led with improved current spreading structures
US6777805B2 (en) * 2000-03-31 2004-08-17 Toyoda Gosei Co., Ltd. Group-III nitride compound semiconductor device
JP2001339101A (ja) 2000-05-26 2001-12-07 Sharp Corp 窒化ガリウム系化合物半導体素子
TW516248B (en) * 2001-12-21 2003-01-01 Epitech Technology Corp Nitride light emitting diode with spiral-shaped metal electrode
TW577184B (en) 2002-12-26 2004-02-21 Epistar Corp Light emitting layer having voltage/resistance interdependent layer
TWI288486B (en) * 2004-03-17 2007-10-11 Epistar Corp Light-emitting diode and method for manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345480A (ja) * 2000-03-31 2001-12-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP2002319705A (ja) * 2001-04-23 2002-10-31 Matsushita Electric Works Ltd Ｌｅｄ装置
JP2004253763A (ja) * 2002-07-15 2004-09-09 Shogen Koden Kofun Yugenkoshi 接着層及び反射層を有する発光ダイオード及びその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010529658A (ja) * 2007-05-30 2010-08-26 バーティクル，インク 発光ダイオードおよびその製造方法
JP2009164572A (ja) * 2007-12-31 2009-07-23 Epivalley Co Ltd Ｉｉｉ族窒化物半導体発光素子
JP2009253056A (ja) * 2008-04-07 2009-10-29 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びランプ
JP2013150018A (ja) * 2008-09-09 2013-08-01 Bridgelux Inc 向上した電極構造を有する発光素子
US9324915B2 (en) 2008-09-09 2016-04-26 Kabushiki Kaisha Toshiba Light-emitting device with improved electrode structures
JP2012511248A (ja) * 2008-12-04 2012-05-17 エピヴァレー カンパニー リミテッド 半導体発光素子
WO2010147012A1 (ja) * 2009-06-17 2010-12-23 住友電気工業株式会社 エピタキシャル基板、発光素子、発光装置およびエピタキシャル基板の製造方法
JP2012142630A (ja) * 2012-04-27 2012-07-26 Hitachi Cable Ltd 発光装置

Also Published As

Publication number Publication date
KR101076159B1 (ko) 2011-10-21
DE102006028644A1 (de) 2007-01-04
TWI291243B (en) 2007-12-11
TW200701508A (en) 2007-01-01
KR20060135513A (ko) 2006-12-29
US20060289881A1 (en) 2006-12-28

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