JP5223102B2 - フリップチップ型発光素子 - Google Patents
フリップチップ型発光素子 Download PDFInfo
- Publication number
- JP5223102B2 JP5223102B2 JP2007207258A JP2007207258A JP5223102B2 JP 5223102 B2 JP5223102 B2 JP 5223102B2 JP 2007207258 A JP2007207258 A JP 2007207258A JP 2007207258 A JP2007207258 A JP 2007207258A JP 5223102 B2 JP5223102 B2 JP 5223102B2
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- JP
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- Prior art keywords
- layer
- electrode
- flip
- light emitting
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Description
11:n層
12:活性層
13:p層
14:n型コンタクト電極
15:透光性電極
16、26、36:パッド電極
16a、26a、36a:パッド電極の円形の中心部
16b、16c、26b、36b、36c:パッド電極の枝
16d:パッド電極16の外周である辺部分
17:絶縁性保護膜
18:反射膜
19:バリア層
20:接合電極
Claims (6)
- n層、p層、およびn層とp層の間に形成された活性層からなるIII 族窒化物半導体層と、櫛歯状に露出した前記n層と、前記n層上に設けられたn型コンタクト電極と、前記p層上に設けられた透光性電極と、前記透光性電極上に設けられた複数のパッド電極と、前記パッド電極の一部、前記透光性電極、および前記n層の露出面を覆う絶縁性保護膜と、前記透光性電極の上部であって、前記絶縁性保護膜の中に設けられ、前記活性層から放射された光を前記n層側に反射する反射膜と、を有したフリップチップ型発光素子において、
各々の前記パッド電極は、
前記絶縁性保護膜で覆われていない根元部と、
該根元部から連続して突出して前記パッド電極の外周の長さを拡大させるよう形成され、前記絶縁性保護膜により覆われている枝部と、を有し、
前記パッド電極の枝部は、前記反射膜の下方に延設されており、
複数の前記パッド電極は、前記透光性電極上に前記枝部によって互いに接続されずに独立して平面的に配列され、
前記発光素子は、
前記絶縁性保護膜上に設けられ、前記パッド電極に共通して接続し、各々の前記パッド電極に電流を流す接合電極をさらに有することを特徴とするフリップチップ型発光素子。 - 前記枝部は、前記根元部から突出した線状形状に形成されていることを特徴とする請求項1に記載のフリップチップ型発光素子。
- 前記枝部は、前記根元部から十字型に突出した線状形状に形成されていることを特徴とする請求項2に記載のフリップチップ型発光素子。
- 前記枝部は、前記線状形状に対して、さらに、枝分かれした線状形状を有することを特徴とする請求項2または請求項3に記載のフリップチップ型発光素子。
- 前記透光性電極は、ITOからなることを特徴とする請求項1ないし請求項4のいずれか1項に記載のフリップチップ型発光素子。
- 前記パッド電極と前記接合電極との間に、バリア層を有することを特徴とする請求項1ないし請求項5のいずれか1項に記載のフリップチップ型発光素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007207258A JP5223102B2 (ja) | 2007-08-08 | 2007-08-08 | フリップチップ型発光素子 |
US12/222,366 US8148736B2 (en) | 2007-08-08 | 2008-08-07 | Flip chip type light-emitting element |
CN2008101349620A CN101399307B (zh) | 2007-08-08 | 2008-08-07 | 倒装芯片型发光元件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007207258A JP5223102B2 (ja) | 2007-08-08 | 2007-08-08 | フリップチップ型発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009043934A JP2009043934A (ja) | 2009-02-26 |
JP5223102B2 true JP5223102B2 (ja) | 2013-06-26 |
Family
ID=40345628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007207258A Expired - Fee Related JP5223102B2 (ja) | 2007-08-08 | 2007-08-08 | フリップチップ型発光素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8148736B2 (ja) |
JP (1) | JP5223102B2 (ja) |
CN (1) | CN101399307B (ja) |
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CN101924116B (zh) * | 2009-06-12 | 2014-04-23 | 刘胜 | 可扩展的超大尺寸发光二极管芯片及制造方法 |
KR101093120B1 (ko) * | 2009-11-16 | 2011-12-13 | 서울옵토디바이스주식회사 | 전류분산을 위한 전극 연장부들을 갖는 발광 다이오드 |
KR101625125B1 (ko) * | 2009-12-29 | 2016-05-27 | 서울바이오시스 주식회사 | 전극 연장부들을 갖는 발광 다이오드 |
KR101131084B1 (ko) * | 2010-02-01 | 2012-03-30 | 우리엘에스티 주식회사 | 반도체 발광소자 |
JP5381853B2 (ja) | 2010-03-26 | 2014-01-08 | 豊田合成株式会社 | 半導体発光素子 |
KR100988192B1 (ko) | 2010-05-06 | 2010-10-18 | (주)더리즈 | 발광 소자 |
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KR101138951B1 (ko) | 2010-08-23 | 2012-04-25 | 서울옵토디바이스주식회사 | 발광다이오드 |
JP5737066B2 (ja) * | 2010-08-26 | 2015-06-17 | 日亜化学工業株式会社 | 半導体発光素子 |
US8664684B2 (en) | 2010-08-31 | 2014-03-04 | Micron Technology, Inc. | Solid state lighting devices with improved contacts and associated methods of manufacturing |
JP2012124321A (ja) * | 2010-12-08 | 2012-06-28 | Showa Denko Kk | 半導体発光素子、ランプおよび半導体発光素子の製造方法 |
KR101204429B1 (ko) * | 2010-12-31 | 2012-11-26 | 갤럭시아포토닉스 주식회사 | 반사층이 형성된 전극을 갖는 발광 다이오드와, 발광 다이오드 패키지 및 이의 제작 방법 |
JP5754173B2 (ja) * | 2011-03-01 | 2015-07-29 | ソニー株式会社 | 発光ユニットおよび表示装置 |
JP5541261B2 (ja) | 2011-03-23 | 2014-07-09 | 豊田合成株式会社 | Iii族窒化物半導体発光素子 |
JP2013120936A (ja) * | 2011-12-07 | 2013-06-17 | Ultratech Inc | パターン効果を低減したGaNLEDのレーザーアニール |
CN103946994B (zh) * | 2012-01-13 | 2016-10-12 | 世迈克琉明有限公司 | 半导体发光器件 |
US20130285010A1 (en) * | 2012-04-27 | 2013-10-31 | Phostek, Inc. | Stacked led device with posts in adhesive layer |
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CN104471727B (zh) * | 2013-04-30 | 2018-01-05 | 世迈克琉明有限公司 | 半导体发光器件 |
KR102070088B1 (ko) | 2013-06-17 | 2020-01-29 | 삼성전자주식회사 | 반도체 발광소자 |
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JP6331906B2 (ja) * | 2013-09-13 | 2018-05-30 | 日亜化学工業株式会社 | 発光素子 |
JP6458463B2 (ja) | 2013-12-09 | 2019-01-30 | 日亜化学工業株式会社 | 発光素子 |
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-
2007
- 2007-08-08 JP JP2007207258A patent/JP5223102B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-07 US US12/222,366 patent/US8148736B2/en active Active
- 2008-08-07 CN CN2008101349620A patent/CN101399307B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP2009043934A (ja) | 2009-02-26 |
CN101399307B (zh) | 2010-06-09 |
US8148736B2 (en) | 2012-04-03 |
US20090039374A1 (en) | 2009-02-12 |
CN101399307A (zh) | 2009-04-01 |
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