TWI291243B - A semiconductor light-emitting device - Google Patents

A semiconductor light-emitting device Download PDF

Info

Publication number
TWI291243B
TWI291243B TW094121291A TW94121291A TWI291243B TW I291243 B TWI291243 B TW I291243B TW 094121291 A TW094121291 A TW 094121291A TW 94121291 A TW94121291 A TW 94121291A TW I291243 B TWI291243 B TW I291243B
Authority
TW
Taiwan
Prior art keywords
semiconductor light
layer
emitting device
emitting
light
Prior art date
Application number
TW094121291A
Other languages
English (en)
Chinese (zh)
Other versions
TW200701508A (en
Inventor
Yen-Wen Chen
Wen-Huang Liu
Wei-Chih Peng
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to TW094121291A priority Critical patent/TWI291243B/zh
Priority to US11/308,981 priority patent/US20060289881A1/en
Priority to KR1020060055696A priority patent/KR101076159B1/ko
Priority to DE102006028644A priority patent/DE102006028644A1/de
Priority to JP2006174377A priority patent/JP2007005813A/ja
Publication of TW200701508A publication Critical patent/TW200701508A/zh
Application granted granted Critical
Publication of TWI291243B publication Critical patent/TWI291243B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

Landscapes

  • Led Devices (AREA)
TW094121291A 2005-06-24 2005-06-24 A semiconductor light-emitting device TWI291243B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW094121291A TWI291243B (en) 2005-06-24 2005-06-24 A semiconductor light-emitting device
US11/308,981 US20060289881A1 (en) 2005-06-24 2006-06-02 Semiconductor light emitting device
KR1020060055696A KR101076159B1 (ko) 2005-06-24 2006-06-21 반도체 발광 소자
DE102006028644A DE102006028644A1 (de) 2005-06-24 2006-06-22 Halbleiterlichtemissionsvorrichtung
JP2006174377A JP2007005813A (ja) 2005-06-24 2006-06-23 半導体発光デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094121291A TWI291243B (en) 2005-06-24 2005-06-24 A semiconductor light-emitting device

Publications (2)

Publication Number Publication Date
TW200701508A TW200701508A (en) 2007-01-01
TWI291243B true TWI291243B (en) 2007-12-11

Family

ID=37545228

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094121291A TWI291243B (en) 2005-06-24 2005-06-24 A semiconductor light-emitting device

Country Status (5)

Country Link
US (1) US20060289881A1 (enExample)
JP (1) JP2007005813A (enExample)
KR (1) KR101076159B1 (enExample)
DE (1) DE102006028644A1 (enExample)
TW (1) TWI291243B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9601667B2 (en) 2013-10-15 2017-03-21 Epistar Corporation Light-emitting device
TWI635773B (zh) * 2013-10-15 2018-09-11 晶元光電股份有限公司 發光元件

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007032638A1 (en) * 2005-09-15 2007-03-22 Epiplus Co., Ltd Arrangement of electrodes for light emitting device
US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
US7928451B2 (en) * 2006-08-18 2011-04-19 Sensor Electronic Technology, Inc. Shaped contact layer for light emitting heterostructure
TWI376817B (en) * 2007-11-23 2012-11-11 Epistar Corp Light emitting device, light source apparatus and backlight module
US8872204B2 (en) * 2007-11-23 2014-10-28 Epistar Corporation Light-emitting device having a trench in a semiconductor layer
KR20090073935A (ko) * 2007-12-31 2009-07-03 주식회사 에피밸리 3족 질화물 반도체 발광소자
JP2009253056A (ja) * 2008-04-07 2009-10-29 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びランプ
TWI394296B (zh) * 2008-09-09 2013-04-21 Bridgelux Inc 具改良式電極結構之發光元件
KR101000277B1 (ko) * 2008-12-04 2010-12-10 주식회사 에피밸리 반도체 발광소자
TWI470824B (zh) * 2009-04-09 2015-01-21 廣鎵光電股份有限公司 電極結構及其發光元件
JP2011023703A (ja) * 2009-06-17 2011-02-03 Sumitomo Electric Ind Ltd エピタキシャル基板、発光素子、発光装置およびエピタキシャル基板の製造方法
TWI499347B (zh) * 2009-12-31 2015-09-01 晶元光電股份有限公司 發光元件
JP2012142630A (ja) * 2012-04-27 2012-07-26 Hitachi Cable Ltd 発光装置
TWI699904B (zh) * 2017-07-31 2020-07-21 晶元光電股份有限公司 發光元件
CN111739878B (zh) * 2019-03-25 2022-05-24 群创光电股份有限公司 电子装置
CN112993115B (zh) * 2019-12-17 2022-12-27 深圳第三代半导体研究院 一种发光二极管

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69425186T3 (de) * 1993-04-28 2005-04-14 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
US6281524B1 (en) * 1997-02-21 2001-08-28 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
JP3740293B2 (ja) 1998-07-29 2006-02-01 京セラ株式会社 半導体発光装置
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
US6614056B1 (en) * 1999-12-01 2003-09-02 Cree Lighting Company Scalable led with improved current spreading structures
JP4810746B2 (ja) * 2000-03-31 2011-11-09 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
US6777805B2 (en) * 2000-03-31 2004-08-17 Toyoda Gosei Co., Ltd. Group-III nitride compound semiconductor device
JP2001339101A (ja) 2000-05-26 2001-12-07 Sharp Corp 窒化ガリウム系化合物半導体素子
JP2002319705A (ja) * 2001-04-23 2002-10-31 Matsushita Electric Works Ltd Ｌｅｄ装置
TW516248B (en) * 2001-12-21 2003-01-01 Epitech Technology Corp Nitride light emitting diode with spiral-shaped metal electrode
TW567618B (en) * 2002-07-15 2003-12-21 Epistar Corp Light emitting diode with adhesive reflection layer and manufacturing method thereof
TW577184B (en) 2002-12-26 2004-02-21 Epistar Corp Light emitting layer having voltage/resistance interdependent layer
TWI288486B (en) * 2004-03-17 2007-10-11 Epistar Corp Light-emitting diode and method for manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9601667B2 (en) 2013-10-15 2017-03-21 Epistar Corporation Light-emitting device
TWI635773B (zh) * 2013-10-15 2018-09-11 晶元光電股份有限公司 發光元件
TWI635772B (zh) * 2013-10-15 2018-09-11 晶元光電股份有限公司 發光元件

Also Published As

Publication number Publication date
KR101076159B1 (ko) 2011-10-21
JP2007005813A (ja) 2007-01-11
DE102006028644A1 (de) 2007-01-04
TW200701508A (en) 2007-01-01
KR20060135513A (ko) 2006-12-29
US20060289881A1 (en) 2006-12-28

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