CN108831980A - 发光元件 - Google Patents

发光元件 Download PDF

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CN108831980A
CN108831980A CN201810595145.9A CN201810595145A CN108831980A CN 108831980 A CN108831980 A CN 108831980A CN 201810595145 A CN201810595145 A CN 201810595145A CN 108831980 A CN108831980 A CN 108831980A
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light
emitting component
layer
tin
support substrate
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CN108831980B (zh
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陈世益
许嘉良
徐子杰
巫汉敏
许晏铭
黄建富
陈昭兴
姚久琳
刘欣茂
钟健凯
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Epistar Corp
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Abstract

本发明公开了一种发光元件包含︰一支持基板、一第一发光元件与一第二发光元件位于该支持基板之上、以及一金属线位于该支持基板上且电连接该第一发光元件与该第二发光元件。其中该第一发光元件包含一透明层位于该支持基板上、及一第一发光叠层位于该透明层上，且该金属线直接接触该透明层。该第一发光叠层具有一第一宽度，该透明层具有一第二宽度不同于该第一宽度。

Description

发光元件
本发明申请是申请号为201510872443.4、申请日为2011年8月31日、发明名称为“具有多个接触部的发光元件”的发明专利申请的分案申请。
技术领域
本发明涉及一种发光元件，特别是涉及一种具有透明层的发光元件。
背景技术
发光二极管(Light-emitting Diode；LED)目前已经广泛地使用在光学显示装置、交通标志、数据储存装置、通讯装置、照明装置与医疗器材上。已知的LED具有金属电流扩散层位于基板与发光叠层之间，例如钛/金或铬/金的金属层。但是金属电流扩散层会吸收LED产生的光，导致LED的发光效率降低。
发明内容
发光元件具有支持基板、第一发光元件与第二发光元件位于该支持基板之上，其中该第一发光元件包含透明层位于该支持基板上、及第一发光叠层位于该透明层上。發光元件具有金属线，位于该支持基板上且电连接该第一发光元件与该第二发光元件，且该金属线直接接触该透明层。该第一发光叠层具有第一宽度，该透明层具有第二宽度，不同于该第一宽度。
发光元件具有支持基板；反射层形成于支持基板之上；透明层形成于反射层之上；发光叠层形成于透明层之上；蚀刻阻挡层形成于发光叠层与反射层之间；通孔形成于发光叠层之中；以及导电层位于发光叠层的侧壁且经由通孔实质上接触蚀刻阻挡层。
发光元件具有支持基板；反射层形成于支持基板之上；透明层形成于反射层之上；发光叠层形成于透明层之上；蚀刻阻挡层形成于透明层与反射层之间；以及多个接触部形成于发光叠层与透明层之间。
发光装置具有支持基板；第一发光元件与第二发光元件形成于支持基板之上，其中第一发光元件具有透明层形成于支持基板之上；第一发光叠层形成于透明层之上；以及接触部形成于透明层与第一发光叠层之间，与第二发光元件具有电极；以及第二发光叠层形成于电极与支持基板之间；以及金属线形成于支持基板之上且电连接电极与接触部。
附图说明
图1A～1F为本发明实施例的发光元件制造流程图。
图2为本发明另一实施例的发光元件的剖面图。
图3为本发明另一实施例的发光元件的剖面图。
图4为本发明实施例的发光装置的剖面图。
图5为本发明另一实施例的发光装置的剖面图。
图6为本发明实施例的光源产生装置的示意图。
图7为本发明实施例的背光模块的示意图。
附图标记说明
1、2、3：发光元件 10：生长基板
11：蚀刻阻挡层 12：发光叠层
122：第一半导体层 124：有源层
126：第二半导体层 13：反射层
14：临时基板 15：粘结层
16：接触部 17：支持基板
18：透明层 19：通孔
2：发光元件 20：导电部
21：第一电极 22：第二电极
32：导电层 4、5：发光装置
41：第一发光元件 42：第二发光元件
43：绝缘层 44：金属线
52：电流阻挡层 6：光源产生装置
61：光源 62：电源供应系统
63：控制元件 7：背光模块
71：光学元件
具体实施方式
本发明的实施例将被详细地描述，并且绘制于附图中，相同或类似的部分会以相同的号码在各附图以及说明出现。
图1A～1F为本发明实施例的发光元件制造流程图。如图1A所示，发光叠层12形成于生长基板10之上，发光叠层12具有第一半导体层122；有源层124形成于第一半导体层122之上；以及第二半导体层126形成于有源层124之上，其中第一半导体层122与第二半导体层126的极性相异。多个导电部20形成于第二半导体层126之上，临时基板14形成于发光叠层12与多个导电部20之上。如图1B所示，移除生长基板10后，多个接触部16形成于第一半导体层122之下。如图1C所示，透明层18形成于第一半导体层122之下，并且覆盖多个接触部16。蚀刻阻挡层11形成于透明层18之下，以及反射层13形成于透明层18之下且覆盖蚀刻阻挡层11。如图1D所示，支持基板17通过粘结层15贴附于反射层13。如图1E所示，临时基板14被移除后，部分的第二半导体层126与有源层124被移除以曝露部分第一半导体层122。通孔19形成于第一半导体层122曝露的部分，并往反射层13延伸以曝露部分蚀刻阻挡层11。如图1F所示，第二半导体层126的上表面被粗化以形成粗糙表面。第一电极21形成于第一半导体层122曝露的部分，并且填满通孔19以电连接蚀刻阻挡层11。第二电极22形成于第二半导体层126的上表面以形成发光元件1，第二电极22电连接于多个导电部20。
支持基板17可用以支持位于其上的发光叠层12与其它层或结构，其材料可为透明材料或高散热材料。透明材料包括但不限于蓝宝石(Sapphire)、钻石(Diamond)、玻璃(Glass)、环氧树脂(Epoxy)、石英(Quartz)、压克力(Acryl)、氧化铝(Al2O3)、氧化锌(ZnO)或氮化铝(AlN)等。高散热材料包括但不限于铜(Cu)、铝(Al)、钼(Mo)、铜-锡(Cu-Sn)、铜-锌(Cu-Zn)、铜-镉(Cu-Cd)、镍-锡(Ni-Sn)、镍-钴(Ni-Co)、金合金(Au alloy)、类钻碳薄膜(Diamond Like Carbon；DLC)、石墨(Graphite)、碳纤维(Carbon fiber)、金属基复合材料(Metal Matrix Composite；MMC)、陶瓷基复合材料(Ceramic Matrix Composite；CMC)、硅(Si)、磷化碘(IP)、硒化锌(ZnSe)、砷化镓(GaAs)、碳化硅(SiC)、磷化镓(GaP)、磷砷化镓(GaAsP)、硒化锌(ZnSe)、磷化铟(InP)、镓酸锂(LiGaO2)或铝酸锂(LiAlO2)。粘结层15可连接支持基板17与反射层13，而且具有多个从属层(未显示)。粘结层15的材料可为绝缘材料或导电材料。绝缘材料包括但不限于聚亚酰胺(PI)、苯并环丁烯(BCB)、过氟环丁烷(PFCB)、氧化镁(MgO)、Su8、环氧树脂(Epoxy)、丙烯酸树脂(Acrylic Resin)、环烯烃聚合物(COC)、聚甲基丙烯酸甲酯(PMMA)、聚对苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、聚醚酰亚胺(Polyetherimide)、氟碳聚合物(Fluorocarbon Polymer)、玻璃(Glass)、氧化铝(Al2O3)、氧化硅(SiOx)、氧化钛(TiO2)、氮化硅(SiNx)或旋涂玻璃(SOG)。导电材料包括但不限于氧化铟锡(ITO)、氧化铟(InO)、氧化锡(SnO)、氧化镉锡(CTO)、氧化锑锡(ATO)、氧化铝锌(AZO)、氧化锌锡(ZTO)、氧化镓锌(GZO)、氧化锌(ZnO)、砷化铝镓(AlGaAs)、氮化镓(GaN)、磷化镓(GaP)、砷化镓(GaAs)、磷砷化镓(GaAsP)、氧化铟锌(IZO)、氧化钽(Ta2O5)、类钻碳薄膜(DLC)、铜(Cu)、铝(Al)、铟(In)、锡(Sn)、金(Au)、铂(Pt)、锌(Zn)、银(Ag)、钛(Ti)、镍(Ni)、铅(Pb)、钯(Pd)、锗(Ge)、铬(Cr)、镉(Cd)、钴(Co)、锰(Mn)、锑(Sb)、铋(Bi)、镓(Ga)、铊(Tl)、钋(Po)、铱(Ir)、铼(Re)、铑(Rh)、锇(Os)、钨(W)、锂(Li)、钠(Na)、钾(K)、铍(Be)、镁(Mg)、钙(Ca)、锶(Sr)、钡(Ba)、锆(Zr)、钼(Mo)、钠(La)、银-钛(Ag-Ti)、铜-锡(Cu-Sn)、铜-锌(Cu-Zn)、铜-镉(Cu-Cd)、锡-铅-锑(Sn-Pb-Sb)、锡-铅-锌(Sn-Pb-Zn)、镍-锡(Ni-Sn)、镍-钴(Ni-Co)或金合金(Au alloy)等。反射层13可反射来自发光叠层12的光线，其材料包括但不限于铜(Cu)、铝(Al)、铟(In)、锡(Sn)、金(Au)、铂(Pt)、锌(Zn)、银(Ag)、钛(Ti)、镍(Ni)、铅(Pb)、钯(Pd)、锗(Ge)、铬(Cr)、镉(Cd)、钴(Co)、锰(Mn)、锑(Sb)、铋(Bi)、镓(Ga)、铊(Tl)、钋(Po)、铱(Ir)、铼(Re)、铑(Rh)、锇(Os)、钨(W)、锂(Li)、钠(Na)、钾(K)、铍(Be)、镁(Mg)、钙(Ca)、锶(Sr)、钡(Ba)、锆(Zr)、钼(Mo)、钠(La)、银-钛(Ag-Ti)、铜-锡(Cu-Sn)、铜-锌(Cu-Zn)、铜-镉(Cu-Cd)、锡-铅-锑(Sn-Pb-Sb)、锡-铅-锌(Sn-Pb-Zn)、镍-锡(Ni-Sn)、镍-钴(Ni-Co)或金合金(Au alloy)等。蚀刻阻挡层11可传导电流与保护反射层13免于被破坏，其材料包括但不限于铜(Cu)、铝(Al)、铟(In)、锡(Sn)、金(Au)、铂(Pt)、锌(Zn)、银(Ag)、钛(Ti)、镍(Ni)、铅(Pb)、钯(Pd)、锗(Ge)、铬(Cr)、镉(Cd)、钴(Co)、锰(Mn)、锑(Sb)、铋(Bi)、镓(Ga)、铊(Tl)、钋(Po)、铱(Ir)、铼(Re)、铑(Rh)、锇(Os)、钨(W)、锂(Li)、钠(Na)、钾(K)、铍(Be)、镁(Mg)、钙(Ca)、锶(Sr)、钡(Ba)、锆(Zr)、钼(Mo)、钠(La)、银-钛(Ag-Ti)、铜-锡(Cu-Sn)、铜-锌(Cu-Zn)、铜-镉(Cu-Cd)、锡-铅-锑(Sn-Pb-Sb)、锡-铅-锌(Sn-Pb-Zn)、镍-锡(Ni-Sn)、镍-钴(Ni-Co)、金合金(Au alloy)、锗-金-镍(Ge-Au-Ni)、砷化铝镓(AlGaAs)、氮化镓(GaN)、磷化镓(GaP)、砷化镓(GaAs)或磷砷化镓(GaAsP)等。透明层18可提升电流扩散，配合反射层13形成全向反射镜以提升对发光叠层12所产生的光的反射率，以及保护发光叠层12免于被自反射层13扩散的元素破坏。透明层18还可具有多个从属层(未显示)，其材料可为绝缘材料或导电材料。绝缘材料包括但不限于聚亚酰胺(PI)、苯并环丁烯(BCB)、过氟环丁烷(PFCB)、氧化镁(MgO)、Su8、环氧树脂(Epoxy)、丙烯酸树脂(Acrylic Resin)、环烯烃聚合物(COC)、聚甲基丙烯酸甲酯(PMMA)、聚对苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、聚醚酰亚胺(Polyetherimide)、氟碳聚合物(Fluorocarbon Polymer)、玻璃(Glass)、氧化铝(Al2O3)、氧化硅(SiOx)、氧化钛(TiO2)、氮化硅(SiNx)或旋涂玻璃(SOG)。导电材料包括但不限于氧化铟锡(ITO)、氧化铟(InO)、氧化锡(SnO)、氧化镉锡(CTO)、氧化锑锡(ATO)、氧化铝锌(AZO)、氧化锌锡(ZTO)、氧化镓锌(GZO)、氧化锌(ZnO)、砷化铝镓(AlGaAs)、氮化镓(GaN)、磷化镓(GaP)、砷化镓(GaAs)、磷砷化镓(GaAsP)、氧化铟锌(IZO)、氧化钽(Ta2O5)或类钻碳薄膜(DLC)。当透明层18可导电时，其可传导与扩散电流。
多个接触部16可传导与扩散电流。每一个接触部16皆与其他接触部16分离，且可包括多个从属层(未显示)。多个接触部16的材料包括但不限于铜(Cu)、铝(Al)、铟(In)、锡(Sn)、金(Au)、铂(Pt)、锌(Zn)、银(Ag)、钛(Ti)、镍(Ni)、铅(Pb)、钯(Pd)、锗(Ge)、铬(Cr)、镉(Cd)、钴(Co)、锰(Mn)、锑(Sb)、铋(Bi)、镓(Ga)、铊(Tl)、钋(Po)、铱(Ir)、铼(Re)、铑(Rh)、锇(Os)、钨(W)、锂(Li)、钠(Na)、钾(K)、铍(Be)、镁(Mg)、钙(Ca)、锶(Sr)、钡(Ba)、锆(Zr)、钼(Mo)、钠(La)、银-钛(Ag-Ti)、铜-锡(Cu-Sn)、铜-锌(Cu-Zn)、铜-镉(Cu-Cd)、锡-铅-锑(Sn-Pb-Sb)、锡-铅-锌(Sn-Pb-Zn)、镍-锡(Ni-Sn)、镍-钴(Ni-Co)、金合金(Au alloy)、锗-金-镍(Ge-Au-Ni)、砷化铝镓(AlGaAs)、氮化镓(GaN)、磷化镓(GaP)、砷化镓(GaAs)或磷砷化镓(GaAsP)等。每一接触部16从俯视的形状可为三角形、矩形、梯形或圆形等。以圆形的接触部为例，其直径可为3～15微米，优选为6～10微米。多个接触部16的面积相对于有源层124上表面的面积的比例约为0.5～6％，优选为1～3％。为了提升电流扩散的能力，一些靠近透明层18的侧面交会边的接触部的面积大于其他接触部的面积。多个接触部16彼此之间的距离取决于第一半导体层122的厚度。例如当第一半导体层122的厚度约为3微米时，多个接触部16彼此之间的距离约为20～40微米。第一半导体层122的厚度越薄，多个接触部16彼此之间的距离越短。为了提升电流扩散的能力，多个接触部16可以在任两个相邻的导电部20之间排列成两条线或三条线。另外，多个接触部16未被第二电极22与多个导电部20所覆盖。换言之，第二电极22与多个导电部20不在多个接触部16的正上方。
发光叠层12可产生光线，且包括半导体材料。半导体材料具有一种以上的元素，选自镓(Ga)、铝(Al)、铟(In)、磷(P)、氮(N)、锌(Zn)、镉(Cd)与硒(Se)所构成的群组。第一电极21与第二电极22用以接受外部电压，其材料可为透明导电材料或金属材料。透明导电材料包括但不限于氧化铟锡(ITO)、氧化铟(InO)、氧化锡(SnO)、氧化镉锡(CTO)、氧化锑锡(ATO)、氧化铝锌(AZO)、氧化锌锡(ZTO)、氧化镓锌(GZO)、氧化锌(ZnO)、砷化铝镓(AlGaAs)、氮化镓(GaN)、磷化镓(GaP)、砷化镓(GaAs)、磷砷化镓(GaAsP)、氧化铟锌(IZO)、氧化钽(Ta2O5)或类钻碳薄膜(DLC)。金属材料包括但不限于铜(Cu)、铝(Al)、铟(In)、锡(Sn)、金(Au)、铂(Pt)、锌(Zn)、银(Ag)、钛(Ti)、镍(Ni)、铅(Pb)、钯(Pd)、锗(Ge)、铬(Cr)、镉(Cd)、钴(Co)、锰(Mn)、锑(Sb)、铋(Bi)、镓(Ga)、铊(Tl)、钋(Po)、铱(Ir)、铼(Re)、铑(Rh)、锇(Os)、钨(W)、锂(Li)、钠(Na)、钾(K)、铍(Be)、镁(Mg)、钙(Ca)、锶(Sr)、钡(Ba)、锆(Zr)、钼(Mo)、钠(La)、银-钛(Ag-Ti)、铜-锡(Cu-Sn)、铜-锌(Cu-Zn)、铜-镉(Cu-Cd)、锡-铅-锑(Sn-Pb-Sb)、锡-铅-锌(Sn-Pb-Zn)、镍-锡(Ni-Sn)、镍-钴(Ni-Co)或金合金(Au alloy)等。多个导电部20可传导与扩散电流，其材料可为透明导电材料或金属材料。透明导电材料包括但不限于氧化铟锡(ITO)、氧化铟(InO)、氧化锡(SnO)、氧化镉锡(CTO)、氧化锑锡(ATO)、氧化铝锌(AZO)、氧化锌锡(ZTO)、氧化镓锌(GZO)、氧化锌(ZnO)、砷化铝镓(AlGaAs)、氮化镓(GaN)、磷化镓(GaP)、砷化镓(GaAs)、磷砷化镓(GaAsP)、氧化铟锌(IZO)、氧化钽(Ta2O5)或类钻碳薄膜(DLC)。金属材料包括但不限于铜(Cu)、铝(Al)、铟(In)、锡(Sn)、金(Au)、铂(Pt)、锌(Zn)、银(Ag)、钛(Ti)、镍(Ni)、铅(Pb)、钯(Pd)、锗(Ge)、铬(Cr)、镉(Cd)、钴(Co)、锰(Mn)、锑(Sb)、铋(Bi)、镓(Ga)、铊(Tl)、钋(Po)、铱(Ir)、铼(Re)、铑(Rh)、锇(Os)、钨(W)、锂(Li)、钠(Na)、钾(K)、铍(Be)、镁(Mg)、钙(Ca)、锶(Sr)、钡(Ba)、锆(Zr)、钼(Mo)、钠(La)、银-钛(Ag-Ti)、铜-锡(Cu-Sn)、铜-锌(Cu-Zn)、铜-镉(Cu-Cd)、锡-铅-锑(Sn-Pb-Sb)、锡-铅-锌(Sn-Pb-Zn)、镍-锡(Ni-Sn)、镍-钴(Ni-Co)或金合金(Au alloy)等。
图2所示的发光元件2移除发光叠层12与透明层18的一部分以曝露部分反射层13与蚀刻阻挡层11，第一电极21形成于反射层13与蚀刻阻挡层11曝露的部分之上。
图3所示的发光元件3具有支持基板17；粘结层15形成于支持基板17之上；反射层13形成于粘结层15之上；透明层18形成于反射层13之上；发光叠层12形成于透明层18之上，其中多个接触部16与蚀刻阻挡层11形成于发光叠层12与反射层13之间，且被透明层18围绕。移除部分发光叠层12以曝露部分第一半导体层122，蚀刻阻挡层11形成于发光叠层12的下表面。多个接触部16与蚀刻阻挡层11可实质地接触反射层13。通孔19形成于第一半导体层122曝露的部分，且延伸穿过第一半导体层122以曝露一部分蚀刻阻挡层11。第一电极21可形成于发光叠层12上未有第二电极22与多个导电部20形成的部分，沿着发光叠层12的侧壁延伸，然后与蚀刻阻挡层11电连接。第一电极21亦可选择性地填满通孔19以电连接蚀刻阻挡层11。此外，可有导电层32形成在发光叠层12之上，沿着发光叠层12的侧壁延伸，填满通孔19以电连接蚀刻阻挡层11，第一电极22再形成于发光叠层12与导电层32之上以与蚀刻阻挡层11电连接。其中，发光叠层12的侧壁未面对所述发光元件的发光叠层12的侧面。导电层32可为金属材料且以无电镀法形成。金属材料包括但不限于铜(Cu)、铝(Al)、铟(In)、锡(Sn)、金(Au)、铂(Pt)、锌(Zn)、银(Ag)、钛(Ti)、镍(Ni)、铅(Pb)、钯(Pd)、锗(Ge)、铬(Cr)、镉(Cd)、钴(Co)、锰(Mn)、锑(Sb)、铋(Bi)、镓(Ga)、铊(Tl)、钋(Po)、铱(Ir)、铼(Re)、铑(Rh)、锇(Os)、钨(W)、锂(Li)、钠(Na)、钾(K)、铍(Be)、镁(Mg)、钙(Ca)、锶(Sr)、钡(Ba)、锆(Zr)、钼(Mo)、钠(La)、银-钛(Ag-Ti)、铜-锡(Cu-Sn)、铜-锌(Cu-Zn)、铜-镉(Cu-Cd)、锡-铅-锑(Sn-Pb-Sb)、锡-铅-锌(Sn-Pb-Zn)、镍-锡(Ni-Sn)、镍-钴(Ni-Co)或金合金(Au alloy)等。导电层32可改善第一电极22的形成品质，以提升第一电极22与蚀刻阻挡层11间的电连接。
如图4所示，发光装置4具有至少一第一发光元件41与第二发光元件42共同位于支持基板17之上。粘结层15进一步形成于第一发光元件41与第二发光元件42之间，以分离第一发光元件41与第二发光元件42，且粘结层15可为绝缘材料。粘结层15可实质上接触至少一接触部16。绝缘层43形成于第二发光叠层42的上表面与侧边靠近第一发光元件41的部分，金属线44形成于绝缘层43与粘结层15之上，以电连接第一发光元件41的至少一接触部16与第二发光元件42的第二电极22。另一实施例中，金属线44可进一步地接触第二发光元件42的部分发光叠层12。于本实施例中，第一发光元件41与第二发光元件42不具有其他实施例的第一电极22。
绝缘层43的材料可为绝缘材料，例如聚亚酰胺(PI)、苯并环丁烯(BCB)、过氟环丁烷(PFCB)、氧化镁(MgO)、Su8、环氧树脂(Epoxy)、丙烯酸树脂(Acrylic Resin)、环烯烃聚合物(COC)、聚甲基丙烯酸甲酯(PMMA)、聚对苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、聚醚酰亚胺(Polyetherimide)、氟碳聚合物(Fluorocarbon Polymer)、玻璃(Glass)、氧化铝(Al2O3)、氧化硅(SiOx)、氧化钛(TiO2)、氮化硅(SiNx)或旋涂玻璃(SOG)。金属线44的材料可为金属材料，例如铜(Cu)、铝(Al)、铟(In)、锡(Sn)、金(Au)、铂(Pt)、锌(Zn)、银(Ag)、钛(Ti)、镍(Ni)、铅(Pb)、钯(Pd)、锗(Ge)、铬(Cr)、镉(Cd)、钴(Co)、锰(Mn)、锑(Sb)、铋(Bi)、镓(Ga)、铊(Tl)、钋(Po)、铱(Ir)、铼(Re)、铑(Rh)、锇(Os)、钨(W)、锂(Li)、钠(Na)、钾(K)、铍(Be)、镁(Mg)、钙(Ca)、锶(Sr)、钡(Ba)、锆(Zr)、钼(Mo)、钠(La)、银-钛(Ag-Ti)、铜-锡(Cu-Sn)、铜-锌(Cu-Zn)、铜-镉(Cu-Cd)、锡-铅-锑(Sn-Pb-Sb)、锡-铅-锌(Sn-Pb-Zn)、镍-锡(Ni-Sn)、镍-钴(Ni-Co)或金合金(Au alloy)等。
如图5所示，发光装置5的每一第一发光元件41与第二发光元件42还具有电流阻挡层52形成于发光叠层12与透明层18之间。
多个接触部16围绕着电流阻挡层52。电流阻挡层52位于第二电极22的正下方，可具有与第二电极22相似的多个延伸部(未显示)。金属线44电连接第一发光元件41的透明层18与第二发光元件42的第二电极22。电流阻挡层52的材料可为绝缘材料，例如聚亚酰胺(PI)、苯并环丁烯(BCB)、过氟环丁烷(PFCB)、氧化镁(MgO)、Su8、环氧树脂(Epoxy)、丙烯酸树脂(Acrylic Resin)、环烯烃聚合物(COC)、聚甲基丙烯酸甲酯(PMMA)、聚对苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、聚醚酰亚胺(Polyetherimide)、氟碳聚合物(FluorocarbonPolymer)、玻璃(Glass)、氧化铝(Al2O3)、氧化硅(SiOx)、氧化钛(TiO2)、氮化硅(SiNx)或旋涂玻璃(SOG)等。
图6绘示出光源产生装置示意图，光源产生装置6包括管芯，其产生自具有本发明任一实施例中的发光元件或发光装置的晶片。光源产生装置6可以是照明装置，例如路灯、车灯或室内照明光源，也可以是交通标志或平面显示器中背光模块的背光光源。光源产生装置6具有前述发光元件或发光装置组成的光源61、电源供应系统62以供应光源61电流、以及控制元件63，用以控制电源供应系统62。
图7绘示出背光模块剖面示意图，背光模块7包括前述实施例中的光源产生装置6，以及光学元件71。光学元件71可将由光源产生装置6发出的光加以处理，以应用于平面显示器，例如散射光源产生装置6发出的光。
上述实施例仅为例示性说明本发明的原理及其功效，而非用于限制本发明。任何本发明所属技术领域中普通技术人员均可在不违背本发明的技术原理及精神的情况下，对上述实施例进行修改及变化。因此本发明的权利保护范围如权利要求所列。

Claims (10)

1.一种发光元件，其特征在于，包含︰
支持基板；
第一发光元件与第二发光元件，位于该支持基板之上，其中该第一发光元件包含透明层，位于该支持基板上、及第一发光叠层，位于该透明层上；以及
金属线，位于该支持基板上且电连接该第一发光元件与该第二发光元件，且该金属线直接接触该透明层；
其中，该第一发光叠层具有第一宽度，该透明层具有第二宽度，不同于该第一宽度。
2.如权利要求1所述的发光元件，其中该支持基板与该透明层之间包含粘结层。
3.如权利要求1所述的发光元件，还包含绝缘层，设于该第二发光元件面向该第一发光元件的一侧表面。
4.如权利要求1所述的发光元件，还包含反射层，位于该透明层及该支持基板之间。
5.如权利要求1所述的发光元件，其中该金属线覆盖该第二发光元件的一部分。
6.如权利要求1所述的发光元件，其中该第一发光叠层具有第一表面，朝向该支持基板，由剖面观之，该第一表面具有该第一宽度。
7.如权利要求1所述的发光元件，其中第二发光元件还包含电极，该电极直接接触该金属线。
8.如权利要求6所述的发光元件，其中该第一发光叠层具有第二表面，相反于该第一表面，由剖面观之，该第二表面具有第三宽度，该第三宽度不同于该第一宽度。
9.如权利要求8所述的发光元件，其中该第三宽度小于该第一宽度。
10.如权利要求1所述的发光元件，还包含多个接触层在该支持基板上。
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DE102011114815A1 (de) 2012-04-05
CN102446949B (zh) 2016-01-20
US20180287031A1 (en) 2018-10-04

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