TWI578567B - 發光元件 - Google Patents

發光元件 Download PDF

Info

Publication number
TWI578567B
TWI578567B TW105102279A TW105102279A TWI578567B TW I578567 B TWI578567 B TW I578567B TW 105102279 A TW105102279 A TW 105102279A TW 105102279 A TW105102279 A TW 105102279A TW I578567 B TWI578567 B TW I578567B
Authority
TW
Taiwan
Prior art keywords
layer
light
emitting element
emitting
tin
Prior art date
Application number
TW105102279A
Other languages
English (en)
Other versions
TW201616678A (zh
Inventor
陳世益
許嘉良
徐子傑
巫漢敏
許晏銘
黃建富
陳昭興
姚久琳
劉欣茂
鍾健凱
Original Assignee
晶元光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晶元光電股份有限公司 filed Critical 晶元光電股份有限公司
Publication of TW201616678A publication Critical patent/TW201616678A/zh
Application granted granted Critical
Publication of TWI578567B publication Critical patent/TWI578567B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor

Description

發光元件
本發明關於一種發光元件，特別是關於一種具有蝕刻阻擋層之發光元件。
發光二極體（Light-emitting Diode；LED）目前已經廣泛地使用在光學顯示裝置、交通號誌、資料儲存裝置、通訊裝置、照明裝置與醫療器材上。習知的LED具有金屬電流擴散層位於基板與發光疊層之間，例如鈦/金或鉻/金的金屬層。但是金屬電流擴散層會吸收LED產生的光，導致LED的發光效率降低。
一發光元件包含︰一支持基板；一透明層位於該支持基板之上；一發光疊層包含一主動層且位於該透明層之上；以及一蝕刻阻擋層設於該發光疊層與該支持基板之間且與該透明層接觸；其中，該蝕刻阻擋層之厚度小於該透明層之厚度。
本發明之實施例會被詳細地描述，並且繪製於圖式中，相同或類似的部分會以相同的號碼在各圖式以及說明出現。
第1A~1F圖係本發明一實施例之發光元件製造流程圖。如第1A圖所示，一發光疊層12形成於一成長基板10之上，發光疊層12具有一第一半導體層122；一主動層124形成於第一半導體層122之上；以及一第二半導體層126形成於主動層124之上，其中第一半導體層122與第二半導體層126之極性相異。複數個導電部20形成於第二半導體層126之上，一暫時基板14形成於發光疊層12與複數個導電部20之上。如第1B圖所示，移除成長基板10後，複數個接觸部16形成於第一半導體層122之下。如第1C圖所示，一透明層18形成於第一半導體層122之下，並且覆蓋複數個接觸部16。一蝕刻阻擋層11形成於透明層18之下，以及一反射層13形成於透明層18之下且覆蓋蝕刻阻擋層11。如第1D圖所示，一支持基板17藉由一黏結層15貼附於反射層13。如第1E圖所示，暫時基板14被移除後，部分之第二半導體層126與主動層124被移除以曝露部分第一半導體層122。一通孔19形成於第一半導體層122曝露之部分，並往反射層13延伸以曝露部分蝕刻阻擋層11。如第1F圖所示，第二半導體層126之上表面被粗化以形成粗糙表面。一第一電極21形成於第一半導體層122曝露之部分，並且填滿通孔19以電連接蝕刻阻擋層11。一第二電極22形成於第二半導體層126之上表面以形成一發光元件1，第二電極22電連接於複數個導電部20。
支持基板17可用以支持位於其上之發光疊層12與其它層或結構，其材料可為透明材料或高散熱材料。透明材料包含但不限於藍寶石（Sapphire）、鑽石(Diamond)、玻璃(Glass)、環氧樹脂（Epoxy）、石英(Quartz)、壓克力(Acryl)、氧化鋁(Al2O3)、氧化鋅(ZnO)或氮化鋁(AlN)等。高散熱材料包含但不限於銅(Cu)、鋁(Al)、鉬(Mo)、銅-錫(Cu-Sn)、銅-鋅(Cu-Zn)、銅-鎘(Cu-Cd)、鎳-錫(Ni-Sn)、鎳-鈷(Ni-Co)、金合金(Au alloy)、類鑽碳薄膜(Diamond Like Carbon；DLC)、石墨(Graphite)、碳纖維(Carbon fiber)、金屬基複合材料(Metal Matrix Composite；MMC)、陶瓷基複合材料(Ceramic Matrix Composite；CMC)、矽(Si)、磷化碘(IP)、硒化鋅(ZnSe)、砷化鎵(GaAs)、碳化矽(SiC)、磷化鎵(GaP)、磷砷化鎵(GaAsP)、硒化鋅(ZnSe)、磷化銦(InP)、鎵酸鋰(LiGaO2)或鋁酸鋰(LiAlO2)。黏結層15可連接支持基板17與反射層13，而且具有複數個從屬層(未顯示)。黏結層15之材料可為絕緣材料或導電材料。絕緣材料包含但不限於聚亞醯胺(PI)、苯并環丁烯（BCB）、過氟環丁烷（PFCB）、氧化鎂(MgO)、Su8、環氧樹脂（Epoxy）、丙烯酸樹脂（Acrylic Resin）、環烯烴聚合物（COC）、聚甲基丙烯酸甲酯（PMMA）、聚對苯二甲酸乙二酯（PET）、聚碳酸酯（PC）、聚醚醯亞胺（Polyetherimide）、氟碳聚合物（Fluorocarbon Polymer）、玻璃(Glass)、氧化鋁(Al2O3)、氧化矽(SiOx)、氧化鈦(TiO2)、氮化矽(SiNx)或旋塗玻璃(SOG)。導電材料包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)、氧化鋅(ZnO)、砷化鋁鎵(AlGaAs)、氮化鎵(GaN) 磷化鎵(GaP)、砷化鎵(GaAs)、磷砷化鎵(GaAsP)、氧化銦鋅(IZO)、氧化鉭(Ta2O5)、類鑽碳薄膜(DLC)、銅(Cu)、鋁(Al)、銦(In)、錫(Sn)、金(Au)、鉑(Pt)、鋅(Zn)、銀(Ag)、鈦(Ti)、鎳(Ni)、鉛(Pb)、鈀(Pd)、鍺(Ge)、鉻(Cr)、鎘(Cd)、鈷(Co)、錳(Mn)、銻(Sb)、鉍(Bi)、鎵(Ga)、鉈(Tl)、釙(Po)、銥(Ir)、錸(Re)、銠(Rh)、鋨(Os)、鎢(W)、鋰(Li)、鈉(Na)、鉀(K)、鈹(Be)、鎂(Mg)、鈣(Ca)、鍶(Sr)、鋇(Ba)、鋯(Zr)、鉬(Mo)、鈉(La)、銀-鈦(Ag-Ti)、銅-錫(Cu-Sn)、銅-鋅(Cu-Zn)、銅-鎘(Cu-Cd)、錫-鉛-銻(Sn-Pb-Sb)、錫-鉛-鋅(Sn-Pb-Zn)、鎳-錫(Ni-Sn)、鎳-鈷(Ni-Co)或金合金(Au alloy)等。反射層13可反射來自發光疊層12之光線，其材料包含但不限於銅(Cu)、鋁(Al)、銦(In)、錫(Sn)、金(Au)、鉑(Pt)、鋅(Zn)、銀(Ag)、鈦(Ti)、鎳(Ni)、鉛(Pb)、鈀(Pd)、鍺(Ge)、鉻(Cr)、鎘(Cd)、鈷(Co)、錳(Mn)、銻(Sb)、鉍(Bi)、鎵(Ga)、鉈(Tl)、釙(Po)、銥(Ir)、錸(Re)、銠(Rh)、鋨(Os)、鎢(W)、鋰(Li)、鈉(Na)、鉀(K)、鈹(Be)、鎂(Mg)、鈣(Ca)、鍶(Sr)、鋇(Ba)、鋯(Zr)、鉬(Mo)、鈉(La)、銀-鈦(Ag-Ti)、銅-錫(Cu-Sn)、銅-鋅(Cu-Zn)、銅-鎘(Cu-Cd)、錫-鉛-銻(Sn-Pb-Sb)、錫-鉛-鋅(Sn-Pb-Zn)、鎳-錫(Ni-Sn)、鎳-鈷(Ni-Co)或金合金(Au alloy)等。蝕刻阻擋層11可傳導電流與保護反射層13免於被破壞，其材料包含但不限於銅(Cu)、鋁(Al)、銦(In)、錫(Sn)、金(Au)、鉑(Pt)、鋅(Zn)、銀(Ag)、鈦(Ti)、鎳(Ni)、鉛(Pb)、鈀(Pd)、鍺(Ge)、鉻(Cr)、鎘(Cd)、鈷(Co)、錳(Mn)、銻(Sb)、鉍(Bi)、鎵(Ga)、鉈(Tl)、釙(Po)、銥(Ir)、錸(Re)、銠(Rh)、鋨(Os)、鎢(W)、鋰(Li)、鈉(Na)、鉀(K)、鈹(Be)、鎂(Mg)、鈣(Ca)、鍶(Sr)、鋇(Ba)、鋯(Zr)、鉬(Mo)、鈉(La)、銀-鈦(Ag-Ti)、銅-錫(Cu-Sn)、銅-鋅(Cu-Zn)、銅-鎘(Cu-Cd)、錫-鉛-銻(Sn-Pb-Sb)、錫-鉛-鋅(Sn-Pb-Zn)、鎳-錫(Ni-Sn)、鎳-鈷(Ni-Co)、金合金(Au alloy)、鍺-金-鎳(Ge-Au-Ni)、砷化鋁鎵(AlGaAs)、氮化鎵(GaN)、磷化鎵(GaP)、砷化鎵(GaAs)或磷砷化鎵(GaAsP)等。透明層18可提升電流擴散，配合反射層13形成全向反射鏡以提升對發光疊層12所產生之光的反射率，以及保護發光疊層12免於被自反射層13擴散的元素破壞。透明層18更可具有複數個從屬層(未顯示)，其材料可為絕緣材料或導電材料。絕緣材料包含但不限於聚亞醯胺(PI)、苯并環丁烯（BCB）、過氟環丁烷（PFCB）、氧化鎂(MgO)、Su8、環氧樹脂（Epoxy）、丙烯酸樹脂（Acrylic Resin）、環烯烴聚合物（COC）、聚甲基丙烯酸甲酯（PMMA）、聚對苯二甲酸乙二酯（PET）、聚碳酸酯（PC）、聚醚醯亞胺（Polyetherimide）、氟碳聚合物（Fluorocarbon Polymer）、玻璃(Glass)、氧化鋁(Al2O3)、氧化矽(SiOx)、氧化鈦(TiO2)、氮化矽(SiNx)或旋塗玻璃(SOG)。導電材料包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)、氧化鋅(ZnO)、砷化鋁鎵(AlGaAs)、氮化鎵(GaN) 磷化鎵(GaP)、砷化鎵(GaAs)、磷砷化鎵(GaAsP)、氧化銦鋅(IZO)、氧化鉭(Ta2O5)或類鑽碳薄膜(DLC)。當透明層18可導電時，其可傳導與擴散電流。
複數個接觸部16可傳導與擴散電流。每一個接觸部16皆與其他接觸部16分離，且可包含複數個從屬層(未顯示)。複數個接觸部16的材料包含但不限於銅(Cu)、鋁(Al)、銦(In)、錫(Sn)、金(Au)、鉑(Pt)、鋅(Zn)、銀(Ag)、鈦(Ti)、鎳(Ni)、鉛(Pb)、鈀(Pd)、鍺(Ge)、鉻(Cr)、鎘(Cd)、鈷(Co)、錳(Mn)、銻(Sb)、鉍(Bi)、鎵(Ga)、鉈(Tl)、釙(Po)、銥(Ir)、錸(Re)、銠(Rh)、鋨(Os)、鎢(W)、鋰(Li)、鈉(Na)、鉀(K)、鈹(Be)、鎂(Mg)、鈣(Ca)、鍶(Sr)、鋇(Ba)、鋯(Zr)、鉬(Mo)、鈉(La)、銀-鈦(Ag-Ti)、銅-錫(Cu-Sn)、銅-鋅(Cu-Zn)、銅-鎘(Cu-Cd)、錫-鉛-銻(Sn-Pb-Sb)、錫-鉛-鋅(Sn-Pb-Zn)、鎳-錫(Ni-Sn)、鎳-鈷(Ni-Co)、金合金(Au alloy)、鍺-金-鎳(Ge-Au-Ni)、砷化鋁鎵(AlGaAs)、氮化鎵(GaN)、磷化鎵(GaP)、砷化鎵(GaAs)或磷砷化鎵(GaAsP)等。每一接觸部16從上視之形狀可為三角形、矩形、梯形或圓形等。以圓形的接觸部為例，其直徑可為3~15微米，較佳為6~10微米。複數個接觸部16的面積相對於主動層124上表面的面積之比例約為0.5~6%，更佳為1~3%。為了提升電流擴散的能力，一些靠近透明層18之側面交會邊的接觸部的面積大於其他接觸部的面積。複數個接觸部16彼此之間的距離係取決於第一半導體層122之厚度。例如當第一半導體層122之厚度約為3微米時，複數個接觸部16彼此之間的距離約為20~40微米。第一半導體層122的厚度越薄，複數個接觸部16彼此之間的距離越短。為了提升電流擴散的能力，複數個接觸部16可以在任兩個相鄰的導電部20之間排列成兩條線或三條線。另外，複數個接觸部16未被第二電極22與複數個導電部20所覆蓋。換言之，第二電極22與複數個導電部20不在複數個接觸部16的正上方。
發光疊層12可產生光線，且包含半導體材料。半導體材料具有一種以上之元素選自鎵(Ga)、鋁(Al)、銦(In)、磷(P)、氮(N)、鋅(Zn)、鎘(Cd)與硒(Se)所構成之群組。第一電極21與第二電極22用以接受外部電壓，其材料可為透明導電材料或金屬材料。透明導電材料包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)、氧化鋅(ZnO)、砷化鋁鎵(AlGaAs)、氮化鎵(GaN) 磷化鎵(GaP)、砷化鎵(GaAs)、磷砷化鎵(GaAsP)、氧化銦鋅(IZO)、氧化鉭(Ta2O5)或類鑽碳薄膜(DLC)。金屬材料包含但不限於銅(Cu)、鋁(Al)、銦(In)、錫(Sn)、金(Au)、鉑(Pt)、鋅(Zn)、銀(Ag)、鈦(Ti)、鎳(Ni)、鉛(Pb)、鈀(Pd)、鍺(Ge)、鉻(Cr)、鎘(Cd)、鈷(Co)、錳(Mn)、銻(Sb)、鉍(Bi)、鎵(Ga)、鉈(Tl)、釙(Po)、銥(Ir)、錸(Re)、銠(Rh)、鋨(Os)、鎢(W)、鋰(Li)、鈉(Na)、鉀(K)、鈹(Be)、鎂(Mg)、鈣(Ca)、鍶(Sr)、鋇(Ba)、鋯(Zr)、鉬(Mo)、鈉(La)、銀-鈦(Ag-Ti)、銅-錫(Cu-Sn)、銅-鋅(Cu-Zn)、銅-鎘(Cu-Cd)、錫-鉛-銻(Sn-Pb-Sb)、錫-鉛-鋅(Sn-Pb-Zn)、鎳-錫(Ni-Sn)、鎳-鈷(Ni-Co)或金合金(Au alloy)等。複數個導電部20可傳導與擴散電流，其材料可為透明導電材料或金屬材料。透明導電材料包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)、氧化鋅(ZnO)、砷化鋁鎵(AlGaAs)、氮化鎵(GaN) 磷化鎵(GaP)、砷化鎵(GaAs)、磷砷化鎵(GaAsP)、氧化銦鋅(IZO)、氧化鉭(Ta2O5)或類鑽碳薄膜(DLC)。金屬材料包含但不限於銅(Cu)、鋁(Al)、銦(In)、錫(Sn)、金(Au)、鉑(Pt)、鋅(Zn)、銀(Ag)、鈦(Ti)、鎳(Ni)、鉛(Pb)、鈀(Pd)、鍺(Ge)、鉻(Cr)、鎘(Cd)、鈷(Co)、錳(Mn)、銻(Sb)、鉍(Bi)、鎵(Ga)、鉈(Tl)、釙(Po)、銥(Ir)、錸(Re)、銠(Rh)、鋨(Os)、鎢(W)、鋰(Li)、鈉(Na)、鉀(K)、鈹(Be)、鎂(Mg)、鈣(Ca)、鍶(Sr)、鋇(Ba)、鋯(Zr)、鉬(Mo)、鈉(La)、銀-鈦(Ag-Ti)、銅-錫(Cu-Sn)、銅-鋅(Cu-Zn)、銅-鎘(Cu-Cd)、錫-鉛-銻(Sn-Pb-Sb)、錫-鉛-鋅(Sn-Pb-Zn)、鎳-錫(Ni-Sn)、鎳-鈷(Ni-Co)或金合金(Au alloy)等。
第2圖所示之一發光元件2移除發光疊層12與透明層18之一部分以曝露部分反射層13與蝕刻阻擋層11，第一電極21形成於反射層13與蝕刻阻擋層11曝露之部分之上。
第3圖所示之一發光元件3具有支持基板17；黏結層15形成於支持基板17之上；反射層13形成於黏結層15之上；透明層18形成於反射層13之上；發光疊層12形成於透明層18之上，其中複數個接觸部16與蝕刻阻擋層11形成於發光疊層12與反射層13之間，且被透明層18圍繞。移除部分發光疊層12以曝露部分第一半導體層122，蝕刻阻擋層11形成於發光疊層12之下表面。複數個接觸部16與蝕刻阻擋層11可實質地接觸反射層13。通孔19形成於第一半導體層122曝露之部分，且延伸穿過第一半導體層122以曝露一部份蝕刻阻擋層11。第一電極21可形成於發光疊層12上未有第二電極22與複數個導電部20形成之部分，沿著發光疊層12之側壁延伸，然後與蝕刻阻擋層11電連接。第一電極21亦可選擇性地填滿通孔19以電連接蝕刻阻擋層11。此外，可有一導電層32形成在發光疊層12之上，沿著發光疊層12之側壁延伸，填滿通孔19以電連接蝕刻阻擋層11，第一電極22再形成於發光疊層12與導電層32之上以與蝕刻阻擋層11電連接。其中，發光疊層12之側壁係未面對所述發光元件之發光疊層12之側面。導電層32可為金屬材料且以無電鍍法形成。金屬材料包含但不限於銅(Cu)、鋁(Al)、銦(In)、錫(Sn)、金(Au)、鉑(Pt)、鋅(Zn)、銀(Ag)、鈦(Ti)、鎳(Ni)、鉛(Pb)、鈀(Pd)、鍺(Ge)、鉻(Cr)、鎘(Cd)、鈷(Co)、錳(Mn)、銻(Sb)、鉍(Bi)、鎵(Ga)、鉈(Tl)、釙(Po)、銥(Ir)、錸(Re)、銠(Rh)、鋨(Os)、鎢(W)、鋰(Li)、鈉(Na)、鉀(K)、鈹(Be)、鎂(Mg)、鈣(Ca)、鍶(Sr)、鋇(Ba)、鋯(Zr)、鉬(Mo)、鈉(La)、銀-鈦(Ag-Ti)、銅-錫(Cu-Sn)、銅-鋅(Cu-Zn)、銅-鎘(Cu-Cd)、錫-鉛-銻(Sn-Pb-Sb)、錫-鉛-鋅(Sn-Pb-Zn)、鎳-錫(Ni-Sn)、鎳-鈷(Ni-Co)或金合金(Au alloy)等。導電層32可改善第一電極22的形成品質，以提升第一電極22與蝕刻阻擋層11間的電連接。
如第4圖所示，一發光裝置4具有至少一第一發光元件41與一第二發光元件42共同位於一支持基板17之上。一黏結層15進一步形成於第一發光元件41與第二發光元件42之間，以分離第一發光元件41與第二發光元件42，且黏結層15可為絕緣材料。黏結層15可實質上接觸至少一接觸部16。一絕緣層43形成於第二發光疊層42之上表面與側邊靠近第一發光元件41之部分，一金屬線44形成於絕緣層43與黏結層15之上，以電連接第一發光元件41之至少一接觸部16與第二發光元件42之第二電極22。另一實施例中，金屬線44可進一步地接觸第二發光元件42之部分發光疊層12。於本實施例中，第一發光元件41與第二發光元件42不具有其他實施例之第一電極22。
絕緣層43之材料可為絕緣材料，例如聚亞醯胺(PI)、苯并環丁烯（BCB）、過氟環丁烷（PFCB）、氧化鎂(MgO)、Su8、環氧樹脂（Epoxy）、丙烯酸樹脂（Acrylic Resin）、環烯烴聚合物（COC）、聚甲基丙烯酸甲酯（PMMA）、聚對苯二甲酸乙二酯（PET）、聚碳酸酯（PC）、聚醚醯亞胺（Polyetherimide）、氟碳聚合物（Fluorocarbon Polymer）、玻璃(Glass)、氧化鋁(Al2O3)、氧化矽(SiOx)、氧化鈦(TiO2)、氮化矽(SiNx)或旋塗玻璃(SOG)。金屬線44之材料可為金屬材料，例如銅(Cu)、鋁(Al)、銦(In)、錫(Sn)、金(Au)、鉑(Pt)、鋅(Zn)、銀(Ag)、鈦(Ti)、鎳(Ni)、鉛(Pb)、鈀(Pd)、鍺(Ge)、鉻(Cr)、鎘(Cd)、鈷(Co)、錳(Mn)、銻(Sb)、鉍(Bi)、鎵(Ga)、鉈(Tl)、釙(Po)、銥(Ir)、錸(Re)、銠(Rh)、鋨(Os)、鎢(W)、鋰(Li)、鈉(Na)、鉀(K)、鈹(Be)、鎂(Mg)、鈣(Ca)、鍶(Sr)、鋇(Ba)、鋯(Zr)、鉬(Mo)、鈉(La)、銀-鈦(Ag-Ti)、銅-錫(Cu-Sn)、銅-鋅(Cu-Zn)、銅-鎘(Cu-Cd)、錫-鉛-銻(Sn-Pb-Sb)、錫-鉛-鋅(Sn-Pb-Zn)、鎳-錫(Ni-Sn)、鎳-鈷(Ni-Co)或金合金(Au alloy)等。
如第5圖所示，一發光裝置5之每一第一發光元件41與第二發光元件42更具有一電流阻擋層52形成於發光疊層12與透明層18之間。
複數個接觸部16圍繞著電流阻擋層52。電流阻擋層52位於第二電極22之正下方，可具有與第二電極22相似的複數個延伸部(未顯示)。金屬線44電連接第一發光元件41之透明層18與第二發光元件42之第二電極22。電流阻擋層52之材料可為絕緣材料，例如聚亞醯胺(PI)、苯并環丁烯（BCB）、過氟環丁烷（PFCB）、氧化鎂(MgO)、Su8、環氧樹脂（Epoxy）、丙烯酸樹脂（Acrylic Resin）、環烯烴聚合物（COC）、聚甲基丙烯酸甲酯（PMMA）、聚對苯二甲酸乙二酯（PET）、聚碳酸酯（PC）、聚醚醯亞胺（Polyetherimide）、氟碳聚合物（Fluorocarbon Polymer）、玻璃(Glass)、氧化鋁(Al2O3)、氧化矽(SiOx)、氧化鈦(TiO2)、氮化矽(SiNx)或旋塗玻璃(SOG)等。
第6圖係繪示出一光源產生裝置示意圖，一光源產生裝置6包含一晶粒產生自具有本發明任一實施例中之發光元件或發光裝置之晶圓。光源產生裝置6可以是一照明裝置，例如路燈、車燈或室內照明光源，也可以是交通號誌或一平面顯示器中背光模組的一背光光源。光源產生裝置6具有前述發光元件或發光裝置組成之一光源61、一電源供應系統62以供應光源61一電流、以及一控制元件63，用以控制電源供應系統62。
第7圖係繪示出一背光模組剖面示意圖，一背光模組7包含前述實施例中的光源產生裝置6，以及一光學元件71。光學元件71可將由光源產生裝置6發出的光加以處理，以應用於平面顯示器，例如散射光源產生裝置6發出的光。
惟上述實施例僅為例示性說明本發明之原理及其功效，而非用於限制本發明。任何本發明所屬技術領域中具有通常知識者均可在不違背本發明之技術原理及精神的情況下，對上述實施例進行修改及變化。因此本發明之權利保護範圍如後述之申請專利範圍所列。
1、2、3‧‧‧發光元件
10‧‧‧成長基板
11‧‧‧蝕刻阻擋層
12‧‧‧發光疊層
122‧‧‧第一半導體層
124‧‧‧主動層
126‧‧‧第二半導體層
13‧‧‧反射層
14‧‧‧暫時基板
15‧‧‧黏結層
16‧‧‧接觸部
17‧‧‧支持基板
18‧‧‧透明層
19‧‧‧通孔
2‧‧‧發光元件
20‧‧‧導電部
21‧‧‧第一電極
22‧‧‧第二電極
32‧‧‧導電層
4、5‧‧‧發光裝置
41‧‧‧第一發光元件
42‧‧‧第二發光元件
43‧‧‧絕緣層
44‧‧‧金屬線
52‧‧‧電流阻擋層
6‧‧‧光源產生裝置
61‧‧‧光源
62‧‧‧電源供應系統
63‧‧‧控制元件
7‧‧‧背光模組
71‧‧‧光學元件
第1A~1F圖為本發明一實施例之發光元件製造流程圖。
第2圖為本發明另一實施例之發光元件之剖面圖。
第3圖為本發明另一實施例之發光元件之剖面圖。
第4圖為本發明一實施例之發光裝置之剖面圖。
第5圖為本發明另一實施例之發光裝置之剖面圖。
第6圖為本發明一實施例之光源產生裝置之示意圖。
第7圖為本發明一實施例之背光模組之示意圖。
無
無
1‧‧‧發光元件
11‧‧‧蝕刻阻擋層
12‧‧‧發光疊層
122‧‧‧第一半導體層
126‧‧‧第二半導體層
13‧‧‧反射層
15‧‧‧黏結層
16‧‧‧接觸部
17‧‧‧支持基板
18‧‧‧透明層
20‧‧‧導電部
21‧‧‧第一電極
22‧‧‧第二電極

Claims (10)

  1. 一發光元件，包含：一支持基板；一透明層位於該支持基板之上；一發光疊層包含一主動層且位於該透明層之上；以及一蝕刻阻擋層設於該發光疊層與該支持基板之間且與該透明層接觸；其中，該蝕刻阻擋層之厚度大於該透明層之厚度。
  2. 如申請專利範圍第1項所述的發光元件，其中，該蝕刻阻擋層與該發光疊層之下表面接觸。
  3. 如申請專利範圍第1項所述的發光元件，更包含一反射層設於該支持基板與該透明層之間。
  4. 如申請專利範圍第1項所述的發光元件，更包含複數個接觸部位設於該發光疊層及該透明層之間。
  5. 如申請專利範圍第1項所述的發光元件，其中，該支持基板為對該主動層發出的光呈現透明之材料。
  6. 如申請專利範圍第1項所述的發光元件，更包含一第一電極位於該透明層之上，且該第一電極與該蝕刻阻擋層電性連接。
  7. 如申請專利範圍第6項所述的發光元件，更包含一通孔位於該發光疊層之中，該第一電極經由該通孔與該蝕刻阻擋層直接接觸。
  8. 如申請專利範圍第7項所述的發光元件，其中該通孔未穿過該主動層。
  9. 如申請專利範圍第4項所述的發光元件，其中由剖視觀之，該蝕刻阻擋層與該複數個接觸部具有相同的水平位置。
  10. 如申請專利範圍第7項所述的發光元件，其中該發光疊層包含一第一區域及一第二區域小於該第一區域，且該第一電極包覆該第二區域。
TW105102279A 2010-10-04 2011-08-04 發光元件 TWI578567B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38928610P 2010-10-04 2010-10-04

Publications (2)

Publication Number Publication Date
TW201616678A TW201616678A (zh) 2016-05-01
TWI578567B true TWI578567B (zh) 2017-04-11

Family

ID=45832775

Family Applications (3)

Application Number Title Priority Date Filing Date
TW105102279A TWI578567B (zh) 2010-10-04 2011-08-04 發光元件
TW100127881A TWI483425B (zh) 2010-10-04 2011-08-04 具有複數個接觸部的發光元件
TW104109631A TWI525855B (zh) 2010-10-04 2011-08-04 具有複數個接觸部的發光元件

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW100127881A TWI483425B (zh) 2010-10-04 2011-08-04 具有複數個接觸部的發光元件
TW104109631A TWI525855B (zh) 2010-10-04 2011-08-04 具有複數個接觸部的發光元件

Country Status (6)

Country Link
US (4) US9012948B2 (zh)
JP (1) JP5718191B2 (zh)
KR (1) KR101396281B1 (zh)
CN (3) CN102446949B (zh)
DE (1) DE102011114815A1 (zh)
TW (3) TWI578567B (zh)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101868537B1 (ko) * 2011-11-07 2018-06-19 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광 소자 패키지
JP2014022380A (ja) * 2012-07-12 2014-02-03 Dowa Electronics Materials Co Ltd 半導体素子およびその製造方法
KR20140018534A (ko) * 2012-08-02 2014-02-13 엘지이노텍 주식회사 발광 소자
TWI538184B (zh) 2012-08-06 2016-06-11 晶元光電股份有限公司 發光二極體陣列
US9082935B2 (en) 2012-11-05 2015-07-14 Epistar Corporation Light-emitting element and the light-emitting array having the same
CN103811593B (zh) * 2012-11-12 2018-06-19 晶元光电股份有限公司 半导体光电元件的制作方法
CN110265517B (zh) * 2013-07-17 2024-03-29 晶元光电股份有限公司 发光元件
TWI600184B (zh) * 2014-04-08 2017-09-21 晶元光電股份有限公司 發光裝置
TWI630730B (zh) * 2014-04-08 2018-07-21 晶元光電股份有限公司 發光裝置
US9871171B2 (en) * 2014-11-07 2018-01-16 Epistar Corporation Light-emitting device and manufacturing method thereof
CN104465802A (zh) * 2014-11-21 2015-03-25 广西智通节能环保科技有限公司 一种具有砷化镓层器件上形成金属触点及其制造方法
TWI603498B (zh) * 2016-07-05 2017-10-21 隆達電子股份有限公司 側面發光雷射元件
KR102527317B1 (ko) * 2016-08-30 2023-05-03 삼성전자주식회사 금속 패드가 부착된 금속 케이스를 구비한 전자기기
TWI759289B (zh) * 2017-03-21 2022-04-01 晶元光電股份有限公司 發光元件
DE102017114467A1 (de) * 2017-06-29 2019-01-03 Osram Opto Semiconductors Gmbh Halbleiterchip mit transparenter Stromaufweitungsschicht
CN107681034B (zh) * 2017-08-30 2019-11-12 天津三安光电有限公司 微型发光二极管及其制作方法
TWI692116B (zh) * 2017-12-19 2020-04-21 晶元光電股份有限公司 發光元件
CN109326686A (zh) * 2018-09-12 2019-02-12 聚灿光电科技（宿迁）有限公司 一种倒装发光二极管芯片的制作方法
TWI821302B (zh) 2018-11-12 2023-11-11 晶元光電股份有限公司 半導體元件及其封裝結構
JP7296002B2 (ja) * 2018-11-15 2023-06-21 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
CN109860368B (zh) * 2018-11-28 2020-12-01 华灿光电（浙江）有限公司 一种发光二极管外延片、芯片及其制备方法
US11127595B2 (en) 2019-09-19 2021-09-21 Microsoft Technology Licensing, Llc Method for bonding a semiconductor substrate to a carrier
CN114080677A (zh) * 2019-10-15 2022-02-22 三星电子株式会社 显示模块及其制造方法
CN111933772B (zh) * 2020-07-09 2022-04-26 厦门士兰明镓化合物半导体有限公司 发光二极管及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080230791A1 (en) * 2007-03-19 2008-09-25 Epistar Corporation Optoelectronic device
US20100078659A1 (en) * 2008-09-29 2010-04-01 Hitachi Cable, Ltd. Light-emitting element

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3871008A (en) * 1973-12-26 1975-03-11 Gen Electric Reflective multiple contact for semiconductor light conversion elements
JP2666228B2 (ja) 1991-10-30 1997-10-22 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JP3752339B2 (ja) 1997-02-04 2006-03-08 ローム株式会社 半導体発光素子
GB9803763D0 (en) * 1998-02-23 1998-04-15 Cambridge Display Tech Ltd Display devices
EP1115163A4 (en) * 1998-09-10 2001-12-05 Rohm Co Ltd SEMICONDUCTOR LEDS AND MANUFACTURING METHOD THEREOF
JP2001068786A (ja) 1999-06-24 2001-03-16 Sharp Corp 窒化物系化合物半導体発光素子およびその製造方法
TW541710B (en) * 2001-06-27 2003-07-11 Epistar Corp LED having transparent substrate and the manufacturing method thereof
JP2003078162A (ja) * 2001-08-31 2003-03-14 Shin Etsu Handotai Co Ltd ＧａＰ系半導体発光素子
TW518771B (en) 2001-09-13 2003-01-21 United Epitaxy Co Ltd LED and the manufacturing method thereof
WO2003040441A1 (en) * 2001-11-05 2003-05-15 Japan Science And Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
TW513821B (en) * 2002-02-01 2002-12-11 Hsiu-Hen Chang Electrode structure of LED and manufacturing the same
TW577178B (en) * 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
TW578318B (en) 2002-12-31 2004-03-01 United Epitaxy Co Ltd Light emitting diode and method of making the same
JP2004266039A (ja) * 2003-02-28 2004-09-24 Shin Etsu Handotai Co Ltd 発光素子及び発光素子の製造方法
TWI223460B (en) * 2003-09-23 2004-11-01 United Epitaxy Co Ltd Light emitting diodes in series connection and method of making the same
US7119372B2 (en) * 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
KR100576856B1 (ko) * 2003-12-23 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
US8476648B2 (en) * 2005-06-22 2013-07-02 Seoul Opto Device Co., Ltd. Light emitting device and method of manufacturing the same
KR100691497B1 (ko) * 2005-06-22 2007-03-09 서울옵토디바이스주식회사 발광 소자 및 이의 제조 방법
TWI285969B (en) 2005-06-22 2007-08-21 Epistar Corp Light emitting diode and method of the same
US8674375B2 (en) * 2005-07-21 2014-03-18 Cree, Inc. Roughened high refractive index layer/LED for high light extraction
TWI291246B (en) * 2005-10-20 2007-12-11 Epistar Corp Light emitting device and method of forming the same
US7777240B2 (en) * 2006-10-17 2010-08-17 Epistar Corporation Optoelectronic device
JP2008283096A (ja) 2007-05-14 2008-11-20 Hitachi Cable Ltd 半導体発光素子
TW200849548A (en) * 2007-06-05 2008-12-16 Lite On Technology Corp Light emitting element, manufacturing method thereof and light emitting module using the same
JP2009094144A (ja) 2007-10-04 2009-04-30 Canon Inc 発光素子の製造方法
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
WO2009078574A1 (en) * 2007-12-18 2009-06-25 Seoul Opto Device Co., Ltd. Light emitting device and method of manufacturing the same
CN105161594B (zh) * 2008-01-11 2018-03-09 晶元光电股份有限公司 发光元件
US7856040B2 (en) * 2008-09-24 2010-12-21 Palo Alto Research Center Incorporated Semiconductor light emitting devices with non-epitaxial upper cladding
KR100969126B1 (ko) * 2009-03-10 2010-07-09 엘지이노텍 주식회사 발광 소자
US8658513B2 (en) * 2010-05-04 2014-02-25 Varian Semiconductor Equipment Associates, Inc. Isolation by implantation in LED array manufacturing
US8471282B2 (en) * 2010-06-07 2013-06-25 Koninklijke Philips Electronics N.V. Passivation for a semiconductor light emitting device
US8592847B2 (en) * 2011-04-15 2013-11-26 Epistar Corporation Light-emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080230791A1 (en) * 2007-03-19 2008-09-25 Epistar Corporation Optoelectronic device
US20100078659A1 (en) * 2008-09-29 2010-04-01 Hitachi Cable, Ltd. Light-emitting element

Also Published As

Publication number Publication date
US20150194586A1 (en) 2015-07-09
TW201528550A (zh) 2015-07-16
CN108831980A (zh) 2018-11-16
TWI525855B (zh) 2016-03-11
US9012948B2 (en) 2015-04-21
CN102446949B (zh) 2016-01-20
US9577170B2 (en) 2017-02-21
KR20120035102A (ko) 2012-04-13
US20120080697A1 (en) 2012-04-05
CN105304785B (zh) 2019-01-15
CN102446949A (zh) 2012-05-09
TW201216515A (en) 2012-04-16
JP2012080089A (ja) 2012-04-19
US9997687B2 (en) 2018-06-12
TW201616678A (zh) 2016-05-01
TWI483425B (zh) 2015-05-01
CN108831980B (zh) 2021-11-30
US20170117450A1 (en) 2017-04-27
CN105304785A (zh) 2016-02-03
JP5718191B2 (ja) 2015-05-13
KR101396281B1 (ko) 2014-05-16
US20180287031A1 (en) 2018-10-04
US10985301B2 (en) 2021-04-20
DE102011114815A1 (de) 2012-04-05

Similar Documents

Publication Publication Date Title
TWI578567B (zh) 發光元件
TWI540758B (zh) 發光裝置
TWI539622B (zh) 發光裝置及其製造方法
TWI604633B (zh) 發光元件
CN110265517B (zh) 发光元件
CN102629653B (zh) 发光元件及其制法
CN103247732B (zh) 具有平整表面的电流扩散层的发光元件
TWI575776B (zh) 具有高效率反射結構之發光元件
TW201719928A (zh) 發光元件
TWI611602B (zh) 具有高效率反射結構之發光元件
TWI599070B (zh) 具有平整表面的電流擴散層的發光元件
TWI632700B (zh) 具有高效率反射結構之發光元件
TW201717427A (zh) 發光元件
TW201725762A (zh) 發光元件
TW201907582A (zh) 發光元件