JP2012080089A - 複数の接触部を有する発光素子 - Google Patents
複数の接触部を有する発光素子 Download PDFInfo
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- JP2012080089A JP2012080089A JP2011186649A JP2011186649A JP2012080089A JP 2012080089 A JP2012080089 A JP 2012080089A JP 2011186649 A JP2011186649 A JP 2011186649A JP 2011186649 A JP2011186649 A JP 2011186649A JP 2012080089 A JP2012080089 A JP 2012080089A
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- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims description 27
- 229910052793 cadmium Inorganic materials 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 19
- 229910052787 antimony Inorganic materials 0.000 claims description 18
- 229910052719 titanium Inorganic materials 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 229910052718 tin Inorganic materials 0.000 claims description 11
- 229910001020 Au alloy Inorganic materials 0.000 claims description 10
- 229910017518 Cu Zn Inorganic materials 0.000 claims description 10
- 229910017752 Cu-Zn Inorganic materials 0.000 claims description 10
- 229910017943 Cu—Zn Inorganic materials 0.000 claims description 10
- 229910018100 Ni-Sn Inorganic materials 0.000 claims description 10
- 229910018532 Ni—Sn Inorganic materials 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- 229910017755 Cu-Sn Inorganic materials 0.000 claims description 9
- 229910017927 Cu—Sn Inorganic materials 0.000 claims description 9
- 229910017709 Ni Co Inorganic materials 0.000 claims description 9
- 229910003267 Ni-Co Inorganic materials 0.000 claims description 9
- 229910003262 Ni‐Co Inorganic materials 0.000 claims description 9
- 229910020218 Pb—Zn Inorganic materials 0.000 claims description 9
- 229910052788 barium Inorganic materials 0.000 claims description 9
- 229910052790 beryllium Inorganic materials 0.000 claims description 9
- 229910052791 calcium Inorganic materials 0.000 claims description 9
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 229910052741 iridium Inorganic materials 0.000 claims description 9
- 229910052745 lead Inorganic materials 0.000 claims description 9
- 229910052744 lithium Inorganic materials 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 229910052748 manganese Inorganic materials 0.000 claims description 9
- 229910052763 palladium Inorganic materials 0.000 claims description 9
- 229910052699 polonium Inorganic materials 0.000 claims description 9
- 229910052700 potassium Inorganic materials 0.000 claims description 9
- 229910052702 rhenium Inorganic materials 0.000 claims description 9
- 229910052703 rhodium Inorganic materials 0.000 claims description 9
- 229910052708 sodium Inorganic materials 0.000 claims description 9
- 229910052712 strontium Inorganic materials 0.000 claims description 9
- 229910052716 thallium Inorganic materials 0.000 claims description 9
- 229910052726 zirconium Inorganic materials 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 7
- 229910002601 GaN Inorganic materials 0.000 claims description 7
- 229910005540 GaP Inorganic materials 0.000 claims description 7
- 229910017398 Au—Ni Inorganic materials 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims 2
- 230000003319 supportive effect Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 144
- 239000012790 adhesive layer Substances 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000004020 conductor Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 7
- 239000007769 metal material Substances 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 5
- 239000004713 Cyclic olefin copolymer Substances 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 5
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 5
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 5
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 5
- 239000004417 polycarbonate Substances 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000004926 polymethyl methacrylate Substances 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 239000004697 Polyetherimide Substances 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 229920002313 fluoropolymer Polymers 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229920001601 polyetherimide Polymers 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000012994 photoredox catalyst Substances 0.000 description 3
- -1 Polyethylene terephthalate Polymers 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】本発明の一実施例による発光素子は、支持基板と、該支持基板の上に位置する反射層と、該反射層の上に位置する透明層と、該透明層の上に位置する発光スタック層と、該透明層と該反射層との間に位置するエッチング阻止層と、該発光スタック層と該透明層との間に位置する複数の接触部とを有する。
【選択図】図2
Description
on Glass:塗布ガラス)を含んでも良いが、これらに限定されない。導電材料は、ITO、InO、SnO、CTO、ATO、AZO、ZTO、GZO、ZnO、AlGaAs、GaN、GaP、GaAs、GaAsP、IZO、Ta2O5、DLC、Cu、Al、In、Sn、Au、Pt、Zn、Ag、Ti、Ni、Pb、Pd、Ge、Cr、Cd、Co、Mn、Sb、Bi、Ga、Tl、Po、Ir、Re、Rh、Os、W、Li、Na、K、Be、Mg、Ca、Sr、Ba、Zr、Mo、La、Ag−Ti、Cu−Sn、Cu−Zn、Cu−Cd、Sn−Pb−Sb、Sn−Pb−Zn、Ni−Sn、Ni−Co、又はAu合金等を含んでも良いが、これらに限定されない。反射層13は、発光スタック層12からの光線を反射することができ、その材料は、Cu、Al、In、Sn、Au、Pt、Zn、Ag、Ti、Ni、Pb、Pd、Ge、Cr、Cd、Co、Mn、Sb、Bi、Ga、Tl、Po、Ir、Re、Rh、Os、W、Li、Na、K、Be、Mg、Ca、Sr、Ba、Zr、Mo、La、Ag−Ti、Cu−Sn、Cu−Zn、Cu−Cd、Sn−Pb−Sb、Sn−Pb−Zn、Ni−Sn、Ni−Co、又はAu合金等を含んでも良いが、これらに限定されない。エッチング阻止層11は、電流を伝達することができ、また、反射層13を破壊から守ることができ、エッチング阻止層11の材料は、Cu、Al、In、Sn、Au、Pt、Zn、Ag、Ti、Ni、Pb、Pd、Ge、Cr、Cd、Co、Mn、Sb、Bi、Ga、Tl、Po、Ir、Re、Rh、Os、W、Li、Na、K、Be、Mg、Ca、Sr、Ba、Zr、Mo、La、Ag−Ti、Cu−Sn、Cu−Zn、Cu−Cd、Sn−Pb−Sb、Sn−Pb−Zn、Ni−Sn、Ni−Co、Au合金、Ge−Au−Ni,AlGaAs、GaN、GaP、GaAs、又はGaAsP等を含んでも良いが、これらに限定されない。透明層18は、電流の拡散能力を向上し、反射層13と合わせて全方向反射鏡を形成して発光スタック層12からの光を反射する反射率を上げ、また、発光スタック層12を、反射層13から拡散されてきた元素による破壊から守ることができる。透明層18は、さらに、複数の従属層(図示せず)を有しても良く、その材料は、絶縁材料又は導電材料であっても良い。絶縁材料は、PI、BCB、PFCB、MgO、Su8、エポキシ、アクリル樹脂、COC、PMMA、PET、PC、ポリエーテルイミド、フルオロカーボンポリマー、ガラス、Al2O3、SiOX、TiO2、SiNX、又はSOGを含んでも良いが、これらに限定されない。導電材料は、ITO、InO、SnO、CTO、ATO、AZO、ZTO、GZO、ZnO、AlGaAs、GaN、GaP、GaAs、GaAsP、IZO、Ta2O5、又はDLCを含んでも良いが、これらに限定されない。透明層18は、導電可能な時に、電流を伝達及び拡散することができる。
10 成長基板
11 エッチング阻止層
12 発光スタック層
122 第一半導体層
124 能動層
126 第二半導体層
13 反射層
14 臨時基板
15 粘着層
16 接触部
17 支持基板
18 透明層
19 貫通孔
20 導電部
21 第一電極
22 第二電極
32 導電層
4、5 発光装置
41 第一発光素子
42 第二発光素子
43 絶縁層
44 金属線
52 電流阻止層
6 光源生成装置
61 光源
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Claims (10)
- 発光素子であって、
支持基板と、
前記支持基板の上に形成される反射層と、
前記反射層の上に形成される透明層と、
前記透明層の上に形成される発光スタック層と、
前記発光スタック層と前記反射層との間に形成されるエッチング阻止層と、
前記発光スタック層と前記反射層との間に形成される複数の接触部と、
前記発光スタック層の中に位置する貫通孔と、
前記発光スタック層の側壁に位置し、且つ前記貫通孔を経由して前記エッチング阻止層に実質的に接触する導電層と、
を含む、発光素子。 - 前記導電層の上に位置する第一電極をさらに含む、
請求項1に記載の発光素子。 - 前記発光スタック層の上に位置する複数の導電部をさらに含む、
請求項1に記載の発光素子。 - 前記複数の接触部のうち任意の一つは、複数の従属層を含む、
請求項1に記載の発光素子。 - 前記発光スタック層は、能動層を含み、
前記複数の接触部の面積が前記能動層の上表面の面積に対する比は、0.5〜6%である、
請求項1に記載の発光素子。 - 前記発光スタック層は、第一半導体層を含み、
前記複数の接触部の間の距離は、前記第一半導体層の厚みの減少に伴って短くなる、
請求項1に記載の発光素子。 - 前記複数の接触部は互いに分離される、
請求項1に記載の発光素子。 - 前記複数の接触部は、Cu、Al、In、Sn、Au、Pt、Zn、Ag、Ti、Ni、Pb、Pd、Ge、Cr、Cd、Co、Mn、Sb、Bi、Ga、Tl、Po、Ir、Re、Rh、Os、W、Li、Na、K、Be、Mg、Ca、Sr、Ba、Zr、Mo、La、Ag−Ti、Cu−Sn、Cu−Zn、Cu−Cd、Sn−Pb−Sb、Sn−Pb−Zn、Ni−Sn、Ni−Co、Au合金、Ge−Au−Ni、AlGaAs、GaN、GaP、GaAs、及びGaAsPからなるグループから選択される材料を含む、
請求項1に記載の発光素子。 - 前記エッチング阻止層は、前記透明層を突き抜ける、
請求項1に記載の発光素子。 - 前記導電層は、前記貫通孔に充填される、
請求項1に記載の発光素子。
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