DE102006028644A1 - Halbleiterlichtemissionsvorrichtung - Google Patents
Halbleiterlichtemissionsvorrichtung Download PDFInfo
- Publication number
- DE102006028644A1 DE102006028644A1 DE102006028644A DE102006028644A DE102006028644A1 DE 102006028644 A1 DE102006028644 A1 DE 102006028644A1 DE 102006028644 A DE102006028644 A DE 102006028644A DE 102006028644 A DE102006028644 A DE 102006028644A DE 102006028644 A1 DE102006028644 A1 DE 102006028644A1
- Authority
- DE
- Germany
- Prior art keywords
- light emitting
- emitting device
- semiconductor light
- electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 109
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000010410 layer Substances 0.000 claims description 134
- 239000000463 material Substances 0.000 claims description 34
- 239000012790 adhesive layer Substances 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 12
- 229910002704 AlGaN Inorganic materials 0.000 claims description 11
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 10
- -1 aluminum tin oxide Chemical compound 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 229910052745 lead Inorganic materials 0.000 claims description 8
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 8
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 6
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 claims description 6
- 235000019407 octafluorocyclobutane Nutrition 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910020658 PbSn Inorganic materials 0.000 claims description 5
- 101150071746 Pbsn gene Proteins 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910017401 Au—Ge Inorganic materials 0.000 claims description 3
- 229910015365 Au—Si Inorganic materials 0.000 claims description 3
- 229910020220 Pb—Sn Inorganic materials 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910015363 Au—Sn Inorganic materials 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910005540 GaP Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW094121291A TWI291243B (en) | 2005-06-24 | 2005-06-24 | A semiconductor light-emitting device |
| TW94121291 | 2005-06-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102006028644A1 true DE102006028644A1 (de) | 2007-01-04 |
Family
ID=37545228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102006028644A Ceased DE102006028644A1 (de) | 2005-06-24 | 2006-06-22 | Halbleiterlichtemissionsvorrichtung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20060289881A1 (enExample) |
| JP (1) | JP2007005813A (enExample) |
| KR (1) | KR101076159B1 (enExample) |
| DE (1) | DE102006028644A1 (enExample) |
| TW (1) | TWI291243B (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007032638A1 (en) * | 2005-09-15 | 2007-03-22 | Epiplus Co., Ltd | Arrangement of electrodes for light emitting device |
| US7829909B2 (en) * | 2005-11-15 | 2010-11-09 | Verticle, Inc. | Light emitting diodes and fabrication methods thereof |
| US7928451B2 (en) * | 2006-08-18 | 2011-04-19 | Sensor Electronic Technology, Inc. | Shaped contact layer for light emitting heterostructure |
| TWI376817B (en) * | 2007-11-23 | 2012-11-11 | Epistar Corp | Light emitting device, light source apparatus and backlight module |
| US8872204B2 (en) * | 2007-11-23 | 2014-10-28 | Epistar Corporation | Light-emitting device having a trench in a semiconductor layer |
| KR20090073935A (ko) * | 2007-12-31 | 2009-07-03 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
| JP2009253056A (ja) * | 2008-04-07 | 2009-10-29 | Showa Denko Kk | Ｉｉｉ族窒化物半導体発光素子及びランプ |
| TWI394296B (zh) * | 2008-09-09 | 2013-04-21 | Bridgelux Inc | 具改良式電極結構之發光元件 |
| KR101000277B1 (ko) * | 2008-12-04 | 2010-12-10 | 주식회사 에피밸리 | 반도체 발광소자 |
| TWI470824B (zh) * | 2009-04-09 | 2015-01-21 | 廣鎵光電股份有限公司 | 電極結構及其發光元件 |
| JP2011023703A (ja) * | 2009-06-17 | 2011-02-03 | Sumitomo Electric Ind Ltd | エピタキシャル基板、発光素子、発光装置およびエピタキシャル基板の製造方法 |
| TWI499347B (zh) * | 2009-12-31 | 2015-09-01 | 晶元光電股份有限公司 | 發光元件 |
| JP2012142630A (ja) * | 2012-04-27 | 2012-07-26 | Hitachi Cable Ltd | 発光装置 |
| TWI635772B (zh) * | 2013-10-15 | 2018-09-11 | 晶元光電股份有限公司 | 發光元件 |
| TWI635773B (zh) * | 2013-10-15 | 2018-09-11 | 晶元光電股份有限公司 | 發光元件 |
| TWI699904B (zh) * | 2017-07-31 | 2020-07-21 | 晶元光電股份有限公司 | 發光元件 |
| CN111739878B (zh) * | 2019-03-25 | 2022-05-24 | 群创光电股份有限公司 | 电子装置 |
| CN112993115B (zh) * | 2019-12-17 | 2022-12-27 | 深圳第三代半导体研究院 | 一种发光二极管 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69425186T3 (de) * | 1993-04-28 | 2005-04-14 | Nichia Corp., Anan | Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung |
| US6281524B1 (en) * | 1997-02-21 | 2001-08-28 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
| JP3740293B2 (ja) | 1998-07-29 | 2006-02-01 | 京セラ株式会社 | 半導体発光装置 |
| US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
| US6614056B1 (en) * | 1999-12-01 | 2003-09-02 | Cree Lighting Company | Scalable led with improved current spreading structures |
| JP4810746B2 (ja) * | 2000-03-31 | 2011-11-09 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体素子 |
| US6777805B2 (en) * | 2000-03-31 | 2004-08-17 | Toyoda Gosei Co., Ltd. | Group-III nitride compound semiconductor device |
| JP2001339101A (ja) | 2000-05-26 | 2001-12-07 | Sharp Corp | 窒化ガリウム系化合物半導体素子 |
| JP2002319705A (ja) * | 2001-04-23 | 2002-10-31 | Matsushita Electric Works Ltd | Ｌｅｄ装置 |
| TW516248B (en) * | 2001-12-21 | 2003-01-01 | Epitech Technology Corp | Nitride light emitting diode with spiral-shaped metal electrode |
| TW567618B (en) * | 2002-07-15 | 2003-12-21 | Epistar Corp | Light emitting diode with adhesive reflection layer and manufacturing method thereof |
| TW577184B (en) | 2002-12-26 | 2004-02-21 | Epistar Corp | Light emitting layer having voltage/resistance interdependent layer |
| TWI288486B (en) * | 2004-03-17 | 2007-10-11 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
-
2005
- 2005-06-24 TW TW094121291A patent/TWI291243B/zh not_active IP Right Cessation
-
2006
- 2006-06-02 US US11/308,981 patent/US20060289881A1/en not_active Abandoned
- 2006-06-21 KR KR1020060055696A patent/KR101076159B1/ko active Active
- 2006-06-22 DE DE102006028644A patent/DE102006028644A1/de not_active Ceased
- 2006-06-23 JP JP2006174377A patent/JP2007005813A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR101076159B1 (ko) | 2011-10-21 |
| JP2007005813A (ja) | 2007-01-11 |
| TWI291243B (en) | 2007-12-11 |
| TW200701508A (en) | 2007-01-01 |
| KR20060135513A (ko) | 2006-12-29 |
| US20060289881A1 (en) | 2006-12-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed |
Effective date: 20121102 |
|
| R016 | Response to examination communication | ||
| R002 | Refusal decision in examination/registration proceedings | ||
| R003 | Refusal decision now final |