KR101076159B1 - 반도체 발광 소자 - Google Patents

반도체 발광 소자 Download PDF

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Publication number
KR101076159B1
KR101076159B1 KR1020060055696A KR20060055696A KR101076159B1 KR 101076159 B1 KR101076159 B1 KR 101076159B1 KR 1020060055696 A KR1020060055696 A KR 1020060055696A KR 20060055696 A KR20060055696 A KR 20060055696A KR 101076159 B1 KR101076159 B1 KR 101076159B1
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KR
South Korea
Prior art keywords
light emitting
electrode
semiconductor light
layer
emitting device
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KR1020060055696A
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English (en)
Korean (ko)
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KR20060135513A (ko
Inventor
첸 옌-웬
리우 웬-후앙
펭 웨이-친
Original Assignee
에피스타 코포레이션
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Publication of KR20060135513A publication Critical patent/KR20060135513A/ko
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Publication of KR101076159B1 publication Critical patent/KR101076159B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

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  • Led Devices (AREA)
KR1020060055696A 2005-06-24 2006-06-21 반도체 발광 소자 Active KR101076159B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW094121291A TWI291243B (en) 2005-06-24 2005-06-24 A semiconductor light-emitting device
TW094121291 2005-06-24

Publications (2)

Publication Number Publication Date
KR20060135513A KR20060135513A (ko) 2006-12-29
KR101076159B1 true KR101076159B1 (ko) 2011-10-21

Family

ID=37545228

Family Applications (1)

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KR1020060055696A Active KR101076159B1 (ko) 2005-06-24 2006-06-21 반도체 발광 소자

Country Status (5)

Country Link
US (1) US20060289881A1 (enExample)
JP (1) JP2007005813A (enExample)
KR (1) KR101076159B1 (enExample)
DE (1) DE102006028644A1 (enExample)
TW (1) TWI291243B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007032638A1 (en) * 2005-09-15 2007-03-22 Epiplus Co., Ltd Arrangement of electrodes for light emitting device
US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
US7928451B2 (en) * 2006-08-18 2011-04-19 Sensor Electronic Technology, Inc. Shaped contact layer for light emitting heterostructure
TWI376817B (en) * 2007-11-23 2012-11-11 Epistar Corp Light emitting device, light source apparatus and backlight module
US8872204B2 (en) * 2007-11-23 2014-10-28 Epistar Corporation Light-emitting device having a trench in a semiconductor layer
KR20090073935A (ko) * 2007-12-31 2009-07-03 주식회사 에피밸리 3족 질화물 반도체 발광소자
JP2009253056A (ja) * 2008-04-07 2009-10-29 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びランプ
TWI394296B (zh) * 2008-09-09 2013-04-21 Bridgelux Inc 具改良式電極結構之發光元件
KR101000277B1 (ko) * 2008-12-04 2010-12-10 주식회사 에피밸리 반도체 발광소자
TWI470824B (zh) * 2009-04-09 2015-01-21 廣鎵光電股份有限公司 電極結構及其發光元件
JP2011023703A (ja) * 2009-06-17 2011-02-03 Sumitomo Electric Ind Ltd エピタキシャル基板、発光素子、発光装置およびエピタキシャル基板の製造方法
TWI499347B (zh) * 2009-12-31 2015-09-01 晶元光電股份有限公司 發光元件
JP2012142630A (ja) * 2012-04-27 2012-07-26 Hitachi Cable Ltd 発光装置
TWI635772B (zh) * 2013-10-15 2018-09-11 晶元光電股份有限公司 發光元件
TWI635773B (zh) * 2013-10-15 2018-09-11 晶元光電股份有限公司 發光元件
TWI699904B (zh) * 2017-07-31 2020-07-21 晶元光電股份有限公司 發光元件
CN111739878B (zh) * 2019-03-25 2022-05-24 群创光电股份有限公司 电子装置
CN112993115B (zh) * 2019-12-17 2022-12-27 深圳第三代半导体研究院 一种发光二极管

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000106472A (ja) 1998-07-29 2000-04-11 Kyocera Corp 半導体発光装置
JP2001339101A (ja) 2000-05-26 2001-12-07 Sharp Corp 窒化ガリウム系化合物半導体素子
JP2005005281A (ja) 2002-12-26 2005-01-06 Shogen Koden Kofun Yugenkoshi 電圧依存性抵抗器層を持つ光放射体

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69425186T3 (de) * 1993-04-28 2005-04-14 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
US6281524B1 (en) * 1997-02-21 2001-08-28 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
US6614056B1 (en) * 1999-12-01 2003-09-02 Cree Lighting Company Scalable led with improved current spreading structures
JP4810746B2 (ja) * 2000-03-31 2011-11-09 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
US6777805B2 (en) * 2000-03-31 2004-08-17 Toyoda Gosei Co., Ltd. Group-III nitride compound semiconductor device
JP2002319705A (ja) * 2001-04-23 2002-10-31 Matsushita Electric Works Ltd Ｌｅｄ装置
TW516248B (en) * 2001-12-21 2003-01-01 Epitech Technology Corp Nitride light emitting diode with spiral-shaped metal electrode
TW567618B (en) * 2002-07-15 2003-12-21 Epistar Corp Light emitting diode with adhesive reflection layer and manufacturing method thereof
TWI288486B (en) * 2004-03-17 2007-10-11 Epistar Corp Light-emitting diode and method for manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000106472A (ja) 1998-07-29 2000-04-11 Kyocera Corp 半導体発光装置
JP2001339101A (ja) 2000-05-26 2001-12-07 Sharp Corp 窒化ガリウム系化合物半導体素子
JP2005005281A (ja) 2002-12-26 2005-01-06 Shogen Koden Kofun Yugenkoshi 電圧依存性抵抗器層を持つ光放射体

Also Published As

Publication number Publication date
JP2007005813A (ja) 2007-01-11
DE102006028644A1 (de) 2007-01-04
TWI291243B (en) 2007-12-11
TW200701508A (en) 2007-01-01
KR20060135513A (ko) 2006-12-29
US20060289881A1 (en) 2006-12-28

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