JP6300903B2 - セラミック金属遷移部のためのセラミック金属被覆の製造方法および該セラミック金属遷移部 - Google Patents

セラミック金属遷移部のためのセラミック金属被覆の製造方法および該セラミック金属遷移部 Download PDF

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JP6300903B2
JP6300903B2 JP2016515401A JP2016515401A JP6300903B2 JP 6300903 B2 JP6300903 B2 JP 6300903B2 JP 2016515401 A JP2016515401 A JP 2016515401A JP 2016515401 A JP2016515401 A JP 2016515401A JP 6300903 B2 JP6300903 B2 JP 6300903B2
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ceramic metal
ceramic
brazing
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ゲンチュ ディートマー
ゲンチュ ディートマー
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    • H01—ELECTRIC ELEMENTS
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Description

本発明は、セラミック金属遷移部のためのセラミック金属被覆の製造方法、並びに請求項１および５の前文に記載の低、中および高電圧技術において使用するための該セラミック金属遷移部に関する。
低、中および高電圧の開閉器または開閉手段の部品に使用するためのセラミック金属遷移部のためのセラミック金属被覆の製造方法は、主にＡｌ2Ｏ3材料からなるセラミック体を用いて開始され、これが、ＭｏＭｎ（またはタングステン（Ｗ））を標準的に施与した第１の層とＮｉの第２の層とで被覆される。このＮｉ層の上に、通常はろう付け箔が置かれる。これに金属部品が続き、その後、これが上述の層の領域においてこのセラミック体にろう付けされる。通常は、ろう付け箔を使用することが必要である。
真空遮断器のセラミック体への気密接合を得るためには、一般にろう付け技術が用いられる。ろう付けプロセスは、標準的な製造プロセス（ここでは部品の脱気プロセスと最終ステップであるろう付けプロセス）の中で行われる。ろう付けを行うためには付加的なろう付け箔を追加する必要があり、これがセラミック体の両側で行われる。
従って本発明の目的は、薄いろう付け箔の使用に伴う問題を解決するためにろう付け箔を省き、製造をより容易にかつより一層効率的にすることである。
本発明によって与えられる解決方法は、Ｎｉ層の上に第３の層としてＡｇ層を配置し、次いでその上に金属部品を置き、これをろう付けまたは熱処理により接合することである。
これにより、ろう付け箔の使用は完全に省かれる。
利点は、いかなるセラミック金属接合用のろう付け箔の別個の使用をも省くことができる点にある。これによって、使用される要素の低減により製造コストが削減される。
さらなる一実施形態においては、ろう付けステップは、真空、不活性ガスまたは活性ガス（水素）環境下にその場で熱処理により進行される。
第１の有利な代替的実施形態においては、Ａｇ層はめっきにより配置される。
第２の有利な代替的実施形態においては、Ａｇ層は冷ガス溶射により配置される。
低、中または高電圧の使用のための開閉器の構成要素によれば、遷移部領域は、ＭｏＭｎまたはタングステンの第１の層と、Ｎｉの第２の層と、このＮｉ層の上のＡｇの最終層とを有する層系からなり、この層系がろう付けまたは熱処理によってその場で金属部品に直接接合されている。
本発明の重要な利点は次のことによって生じ、すなわち、構成要素が真空遮断器または真空装置であって、該真空遮断器または真空装置において、上述の特徴により該真空遮断器／装置のセラミック体にキャップが気密接合されていることにより生じる。
本発明を図面に示す。
図１は、真空遮断器の一部を示す。
図１は、真空遮断器の一部を示す。主要部分は円筒状のセラミック体である。この円筒体の縁部において、この縁部は異なる金属の層系で被覆されている。このセラミック体は、通常はＡｌ2Ｏ3（酸化アルミニウム）セラミックからなる。
この円筒状のセラミック体の環状端面上に堆積される第１の層は、ＭｏＭｎ（モリブデンマンガン）合金からなる。その上の第２の層は、Ｎｉ（ニッケル）からなる。次のステップは、その上に銀層（Ａｇ）を堆積させることである。次いで、この上方のＡｇ層の上にキャップを配置し、その後、熱処理またはろう付けを行う。このことは、合金化点を超える温度で進行する温度によって、その領域内での金属の拡散によりその場で合金化プロセスが生じることを意味する。

Claims (5)

  1. 低、中および高電圧の装置または開閉器または開閉手段の部品に使用するためのセラミック金属遷移部のためのセラミック金属被覆の製造方法であって、前記方法によりセラミック体が金属部品に接合されるものとし、その際、主にＡｌ2Ｏ3材料からなるセラミック体を、少なくとも、ＭｏＭｎの第１の層とＮｉの第２の層とで被覆する前記方法において、Ｎｉ層の上に第３の層としてＡｇ層を配置し、次いでその上に金属部品を置き、これをろう付けまたは熱処理により接合することで、真空遮断器または真空装置である構成要素を得て、該真空遮断器／装置のセラミック体にキャップが気密接合されていることを特徴とする、前記方法。
  2. 請求項１に記載の方法であって、ろう付けステップを、真空、不活性ガスまたは活性ガス環境下においてその場で進行させることを特徴とする、前記方法。
  3. 請求項２に記載の方法であって、活性ガスが、水素である、前記方法。
  4. 請求項１から３までのいずれか１項に記載の方法であって、Ａｇ層をめっきにより配置することを特徴とする、前記方法。
  5. 請求項１から３までのいずれか１項に記載の方法であって、Ａｇ層を冷ガス溶射により配置することを特徴とする、前記方法。
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