US20130098867A1 - Method for Selective Metallization on a Ceramic Substrate - Google Patents
Method for Selective Metallization on a Ceramic Substrate Download PDFInfo
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- US20130098867A1 US20130098867A1 US13/314,392 US201113314392A US2013098867A1 US 20130098867 A1 US20130098867 A1 US 20130098867A1 US 201113314392 A US201113314392 A US 201113314392A US 2013098867 A1 US2013098867 A1 US 2013098867A1
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- ceramic substrate
- brazing material
- metal layer
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- active brazing
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- 239000000758 substrate Substances 0.000 title claims abstract description 96
- 239000000919 ceramic Substances 0.000 title claims abstract description 90
- 238000000034 method Methods 0.000 title claims abstract description 68
- 238000001465 metallisation Methods 0.000 title claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 83
- 239000002184 metal Substances 0.000 claims abstract description 83
- 238000005219 brazing Methods 0.000 claims abstract description 82
- 239000000463 material Substances 0.000 claims abstract description 73
- 238000005530 etching Methods 0.000 claims abstract description 47
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 37
- 229910052802 copper Inorganic materials 0.000 claims description 37
- 239000010949 copper Substances 0.000 claims description 37
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 104
- 238000007747 plating Methods 0.000 description 11
- 230000005496 eutectics Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910018516 Al—O Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 2
- 229940112669 cuprous oxide Drugs 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000006072 paste Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 241000784732 Lycaena phlaeas Species 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
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- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
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- C04B2237/12—Metallic interlayers
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- C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
Abstract
A method of selective metallization on a ceramic substrate includes selectively forming an active brazing material on a predetermined area of a surface of a ceramic substrate, attaching the metal layer to the ceramic substrate with the active brazing material, performing a brazing process on the active brazing material, forming an etching stop layer on the metal layer and performing an etching process, and removing the etching stop layer. The method can be applied to a severe environment, and the conchoidal fracture between the ceramic substrate and the metal layer can also be avoided. The present invention not only simplifies the process but also improves the product yield.
Description
- 1. Field of the Invention
- The present invention relates generally to methods for selective metallization on a ceramic substrate, and, more particularly, to a method of forming a metal layer within a selected area of a ceramic substrate by a brazing process.
- 2. Description of Related Art
- Two methods are generally used for selective metallization on a ceramic substrate. For the metal of copper, one is realized with selectively etching a copper layer after a direct bonded copper (DBC) process is performed, and the other is done with selective copper deposition or by selectively etching a copper layer after a direct plated copper (DPC) process is performed on the whole substrate.
- As shown in
FIGS. 1A to 1E , cross-sectional views illustrating a method for the metallization of a ceramic substrate by using the DBC process according to the prior art are provided. The method is performed under a high temperature and specific oxygen content. As shown inFIG. 1A , acopper layer 1 is provided, and the surface of thecopper layer 1 is oxidized to form acuprous oxide layer 11. As shown inFIG. 1B , thecopper layer 1 and aceramic substrate 2 are bonded by Cu—Al—O chemical bonds provided by aeutectic layer 12 which is composed of thecuprous oxide layer 11 after cooling. Aceramic substrate 5 directly bonded with copper is thus formed. As shown inFIGS. 1C and 1D , anetching resist 3 is formed on theceramic substrate 5, and a portion of thecopper layer 1 that is not covered by theetching resist layer 3 is etched and removed. As shown inFIG. 1E , theetching resist 3 is removed, so as to complete the selective metallization process of theceramic substrate 5. - However, the DBC process encounters problems. For example, since the desired eutectic temperature for the bonding of copper and ceramic is very close to the melting point of the copper itself, the DBC process must work in a very narrow temperature range, in order to prevent the copper from melting when the ceramic substrate is bonded to the copper layer. Therefore, in a batch production process it is difficult to keep the furnace in inconsistent atmosphere and temperature at different positions, which results in a yield issue on the product. Currently, the metallized ceramic substrate with eutectic bonding is made of aluminum oxide that has low thermal conductivity. This kind of ceramic substrate is rarely made of aluminum nitride (AlN) or silicon carbide (SiC) that have high thermal conductivity because it is difficult to be bonded with the copper layer, due to the lack of wettability or capability of forming Cu—Al—O bonds. Thus, the application of the DBC metallized ceramic substrate for high thermal conductivity or high heat dissipation is extremely restricted. In addition, since the DBC process adopts Cu—Cu2O eutectic bonding, such that no other metal material can be bonded with the ceramic substrate except copper. On the other hand, the conchoidal fracture exists between the ceramic substrate and the copper layer in the conventional DBC process, which is not along the lattice and is irregularly broken, mainly due to the internal stress caused by the mismatch thermal expansion, and affects the reliability and lifetime indirectly.
- Referring to
FIGS. 2A to 2E , cross-sectional views illustrating a method of fabricating a copper plating substrate according to the prior art are provided. The method of performing selective metallization with DPC is as follows. As shown inFIG. 2A , an adhesion layer/seed layer 4 is formed on theceramic substrate 2. As shown inFIG. 2B , aresist layer 6 for the prevention of metal deposition is formed on the adhesion layer/seed layer 4. Ametal layer 10 is deposited directly on the portion of the adhesion layer/seed layer 4 that is not covered by theresist layer 6 by a copper plating process, as shown inFIG. 2C . As shown inFIGS. 2D and 2E , theresist layer 6 is removed, and a surface micro-etching process is performed to complete the selective metallization of the ceramic substrate. -
FIGS. 3A to 3E are cross-sectional views illustrating another method of fabricating a copper plating substrate according to the prior art. As shown inFIG. 3A , an adhesion layer/seed layer 4 is formed on theceramic substrate 2. As shown inFIG. 3B , a copper plating process is performed on the surface of theceramic substrate 2, and acopper layer 1 is formed on the adhesion layer/seed layer 4 to generate theDPC substrates 5. As shown inFIG. 3C , anetching stop layer 3 is formed on theDPC 5. As shown inFIG. 3D , a portion of thecopper layer 6 and the adhesion layer/seed layer 4 that is not covered by theetching stop layer 3 is etched and removed. Finally, theetching stop layer 3 is removed and the selective metallization of the ceramic substrate is formed, as shown inFIG. 3E . - However, the disadvantages exist in performing the selective metallization in the DPC. For example, the copper layer and the ceramic substrate are bonded with the adhesion layer, and the adhesion layer is physically bonded by sputtering or evaporating the titanium (Ti) or titanium tungsten (TiW), thus the adhesion strength is not superior as chemical bonding, and can not be used in the situation of high temperature or large temperature difference. In addition, forming the copper layer (DPC process) by plating will significantly affect the production capability due to time-consuming for the plating deposition process. the obtained thickness of copper layer formed by plating will vary substantially. This is because the current density distribution is significantly affected by the design of plating tank, the resist pattern, and the edge effect of the ceramic substrate. Furthermore, the materials used may be restricted in the plating field, only copper or nickel can be used, and thereby the ceramic substrate can not be bonded with other metals.
- Therefore, how to provide a process of metallized ceramic substrate with high bonding strength, capable of solving the limitations to the applied environment and material selection of the conventional ceramic substrate and metal layer, and reducing the situation of conchoidal fracture caused by the inner stress between the ceramic substrate and the metal layer, is the issue has to be faced by persons skilled in the art.
- In view of the above drawbacks of the prior art, the object of the present invention is to provide a tightly bonding between the ceramic substrate and the metal layer using brazing technology.
- To achieve the objects above and other objects, the present invention provides a method of selective metallization on a ceramic substrate, comprising: forming an active brazing material on a predetermined area of a surface of the ceramic substrate; attaching a metal layer to the surface of the ceramic substrate with the active brazing material and performing a brazing process on the active brazing material; forming an etching stop layer on the predetermined area of the metal layer and etching the metal layer; and removing the etching stop layer.
- In the present invention, the active brazing material is formed on the ceramic substrate, but not limited thereto. In another embodiment, a layer of active brazing material can be also selectively formed on the copper layer and then the copper layer is attached to the ceramic substrate, and subsequent brazing and etching process are performed.
- In an embodiment of the present invention, the active brazing material has active metal with a specific proportion.
- In another embodiment of the present invention, the active brazing material is formed on the surface of the ceramic substrate by a printing, spray coating, or lamination.
- In another embodiment of the present invention, the etching stop layer corresponds to the active brazing material formed on the surface of the ceramic substrate.
- The present invention further provides a method of selective metallization on a ceramic substrate, comprising: performing a predetermined depth etching on a predetermined area of a metal layer, so as for forming an etching area and a reserved area on the metal layer; forming an active brazing material on the reserved area of the metal layer; attaching the metal layer with the active brazing material to the ceramic substrate and performing a brazing process on the active brazing material; and etching the metal layer for removing the metal on the etching area.
- In an embodiment of the present invention, the metal layer is copper, aluminum or stainless steel.
- Compared to the prior art, the present invention provides a method of selective metallization on the ceramic substrate. A brazing process is performed with the active brazing material to increase the bonding reliability between the ceramic substrate and the metal layer. Also, since the electroplating or eutectic bonding is not used in the present invention, materials of the ceramic substrate and the metal layer will not be limited as in the prior art and the process may be applied to the environment with high temperature or large temperature difference. In addition, the problem of conchoidal fracture or poor adhesion between the ceramic substrate and the metal layer in the prior art can be avoided. The present invention not only can simplify the process, but also can improve product yield.
-
FIGS. 1A to 1E are cross-sectional views illustrating a method for the DBC process according to the prior art; -
FIGS. 2A to 2E are cross-sectional views illustrating a method of fabricating a DPC substrate according to the prior art; -
FIGS. 3A to 3E are cross-sectional views illustrating another method of fabricating a DPC substrate according to the prior art; -
FIGS. 4A to 4E are cross-sectional views illustrating a method of forming a selected metal on a ceramic substrate according to a first embodiment of the present invention; and -
FIGS. 5A to 5D are cross-sectional views illustrating a method of forming a selected metal on a ceramic substrate according to a second embodiment of the present invention. - It is to be understood that both the foregoing general descriptions and the detailed embodiments are exemplary and are, together with the accompanying drawings, intended to provide further explanation of technical features and advantages of the invention.
- The following illustrative embodiments are provided to illustrate the disclosure of the present invention, these and other advantages and effects can be apparent to those skilled in the art after reading the disclosure of this specification. The present invention can also be performed or applied by other different embodiments. The details of the specification may be on the basis of different points and applications, and numerous modifications and variations can be devised without departing from the spirit of the present invention.
- Referring to
FIGS. 4A to 4E , cross-sectional views illustrating a method of forming a selected metal on a ceramic substrate according to a first embodiment of the present invention are provided. The method produces a selectively metallized structure of a ceramic substrate with high reliability by a brazing process. - As shown in
FIG. 4A , aceramic substrate 20 is provided. Anactive brazing material 40 is selectively formed on a predetermined area of theceramic substrate 20. Theactive brazing material 40 is selectively coated on some areas of theceramic substrate 20. Theactive brazing material 40 may be nickel-based or silver-based brazing material, and theactive brazing material 40 has an active metal with a specific proportion, such as titanium (Ti), zirconium (Zr) or niobium (Nb), which is helpful to increase the wettability of theactive brazing material 40 on the surface of theceramic substrate 20. In addition, theactive brazing material 40 may be brazing material, such as paste, powder or foil, and the coating process may be performed by a printing, spray coating, or lamination. - As shown in
FIG. 4B , themetal layer 10 is attached to the surface of theceramic substrate 20 with theactive brazing material 40. Then, a brazing process is performed on theactive brazing material 40, such that theceramic substrate 20 and themetal layer 10 may produce highly reliable bonding at an area having theactive brazing material 40 to form a structure with the metal covering on the ceramic substrate. - As shown in
FIG. 4C , anetching stop layer 30 is formed on themetal layer 10. Theetching stop layer 30 corresponds in position to theactive brazing material 40 formed on the surface of theceramic substrate 20. In other words, one side of themetal layer 10 has theactive brazing material 40 and theetching stop layer 30 is formed at the relative position of the other side of themetal layer 10. - As shown in
FIG. 4D , themetal layer 10 is selectively etched. Theetching stop layer 30 formed on themetal layer 10 works as a protective layer with specific patterns generated by dry film and lithography process. Thus, an exposed portion of themetal layer 10 unprotected by theetching stop layer 30 is etched and removed. The etched and removed area is the area not coated by theactive brazing material 40. - As shown in
FIG. 4E , theetching stop layer 30 is removed, after themetal layer 10 is etched, to complete the selective metallization of the ceramic substrate. - In addition to commonly used alumina, the foregoing
ceramic substrate 20 may also be used with aluminum nitride or silicon carbide. In addition to the common copper, themetal layer 10 may also be made of aluminum or stainless steel and the like. In the DBC structure shown inFIGS. 1A to 1E , bonding for the metal layers may be Cu—Cu2O eutectic bonding. Thus, except copper, no other metal material can be used for bonding to the substrate. Also, for the copper plating method shown inFIGS. 2A to 2E and 3A to 3E, because the metal has to be produced by plating, material selection may also be limited to the one that is capable of electroplating. More common materials are only copper or nickel. Therefore, the present invention performs brazing with the active brazing material, such that theceramic substrate 20 and themetal layer 10 are more flexible in selecting the material. - Further, because the
active brazing material 40 is not easily removed by etching, the present invention is characterized in selectively coating theactive brazing material 40 at a particular area, such that themetal layer 10 at an area not coated by theactive brazing material 40 is removed. Theceramic substrate 20 having the removal of themetal layer 10 will not have brazing material residue thereon, and the selective metallization of the ceramic substrate is completed. - According to another embodiment of the present invention, as shown in
FIGS. 4A and 4B , theactive brazing material 40 can also be first coated on themetal layer 10, then theceramic substrate 20 and themetal layer 10 are bonded, and the selective metallization of the ceramic substrate is also completed. - Referring to
FIGS. 5A to 5D , cross-sectional views illustrating a method of forming a selected metal on a ceramic substrate according to a second embodiment of the present invention are provided. - As shown in
FIG. 5A , ametal layer 10 having anetching area 102 and areserved area 101 is provided. Themetal layer 10 is selectively etched through dry film, photoresist or other methods. Thus, the etchedetching area 102 has a certain depth, and the reservedarea 101 will be bonded to theceramic substrate 20. - As shown in
FIG. 5B , anactive brazing material 40 is formed on the reservedarea 101 of themetal layer 10. Theactive brazing material 40 may be nickel or silver-based active brazing material. Theactive brazing material 40 containing an active metal with a specific proportion, such as titanium, zirconium or niobium, may be a brazing material in paste, powder or foil, and coated on the reservedarea 101 by printing, spray coating or lamination. - As shown in
FIG. 5C , themetal layer 10 having theactive brazing material 40 is attached to theceramic substrate 20, and subsequently theactive brazing material 40 is performed the brazing process, such that theceramic substrate 20 and themetal layer 10 are bonded with high reliability at area having theactive brazing material 40. - As shown in
FIG. 5D , the etching step of themetal layer 10 is performed. Themetal layer 10 is etched to remove theetching area 102 of themetal layer 10. Themetal layer 10 is selectively etched. The etched portion refers to theetching area 102 which is not coated by theactive brazing material 40, such that the surface without theactive brazing material 40 attached to themetal layer 10 is exposed, in order to complete the selective metallization of the ceramic substrate. - The etching step of the
metal layer 10 can also be comprehensive etching to themetal layer 10. The etched portion refers to theetching area 102 and the reservedarea 101. As the metal layer of the reservedarea 101 is thicker for the bonding to theceramic substrate 20, under equal etching rate, theetching area 102 will be fully removed after the comprehensive etching, and the reservedarea 101 bonded to theceramic substrate 20 will remain themetal layer 10 with a specific thickness. The selective metallization of the ceramic substrate is thus completed. - Similarly, the aforementioned
ceramic substrate 20 may be alumina, aluminum nitride or silicon carbide, and themetal layer 10 may be copper, aluminum, stainless steel or other materials. Compared to the conventional process, the present invention performs brazing with the active brazing material, such that theceramic substrate 20 and themetal layer 10 are more flexible in selecting the material. - In addition, according to another embodiment of the present invention, as shown in
FIGS. 5B and 5C , theactive brazing material 40 can also be coated on theceramic substrate 20, and theceramic substrate 20 and themetal layer 10 can be bonded to complete the selective metallization of the ceramic substrate of the present embodiment. - By the process described in the present invention, as the operating range of the brazing temperature is greater, the yield of the batch production is improved, and by using the brazing process, the ceramic substrate and the metal layer are more flexible in selecting the material, and thus will not have limitations as in the prior art. In addition, the reliability is better by brazing bonding and the problems of the conchoidal fracture between the ceramic substrate and the metal layer or poor adhesion can be solved, and thus also can be used under the environment of a high temperature or large temperature difference. Finally, since the metal layer with a specific thickness is bonded to the ceramic substrate, the problem of uneven thickness will not occur.
- In summary, the method of selective metallization on the ceramic substrate of the present invention can tightly bond the metal layer and the ceramic substrate by the brazing process. Compared to the prior art, the better process of selective metallization on the ceramic substrate and higher product yield are provided.
- The above embodiments are illustrated to disclose the preferred implementation according to the present invention but not intended to limit the scope of the present invention. Accordingly, all modifications and variations completed by those with ordinary skill in the art should fall within the scope of present invention defined by the appended claims.
Claims (11)
1. A method of selective metallization on a ceramic substrate, comprising:
forming an active brazing material on a predetermined area of a surface of the ceramic substrate;
attaching a metal layer to the surface of the ceramic substrate with the active brazing material, and performing a brazing process on the active brazing material;
forming an etching stop layer on the predetermined area of the metal layer and etching the metal layer; and
removing the etching stop layer.
2. The method of claim 1 , wherein the active brazing material is nickel-based brazing material or silver-based brazing material.
3. The method of claim 1 , wherein the active brazing material has an active metal with a specific proportion.
4. The method of claim 1 , wherein the active brazing material is formed on the surface of the ceramic substrate by printing, spray coating, or lamination.
5. The method of claim 1 , wherein the etching stop layer corresponds in position to the active brazing material on the surface of the ceramic substrate.
6. The method of claim 1 , wherein the metal layer is copper, aluminum or stainless steel.
7. A method of selective metallization on a ceramic substrate, comprising:
performing a predetermined depth etching on a predetermined area of a metal layer, so as for forming an etching area and a reserved area on the metal layer;
forming an active brazing material on the reserved area of the metal layer;
attaching the metal layer with the active brazing material to the ceramic substrate, and performing a brazing process on the active brazing material; and
etching the metal layer for removing the etching area of the metal layer.
8. The method of claim 7 , wherein the active brazing material is nickel-based brazing material or silver-based brazing material.
9. The method of claim 7 , wherein the active brazing material has an active metal with a specific proportion.
10. The method of claim 7 , wherein the active brazing material is formed on the metal layer by printing, spray coating, or lamination.
11. The method of claim 7 , wherein the metal layer is copper, aluminum or stainless steel.
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TW100137839A TWI458639B (en) | 2011-10-19 | 2011-10-19 | A method for selective metallization on a ceramic substrate |
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CN105376931A (en) * | 2015-11-09 | 2016-03-02 | 广东方大索正光电照明有限公司 | Method for printing electronic line on ceramic |
JP2017005182A (en) * | 2015-06-15 | 2017-01-05 | 株式会社アイン | Method for manufacturing ceramic wiring board |
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TW220008B (en) * | 1992-10-23 | 1994-02-01 | Ind Tech Res Inst | Metalization process for multi-layered ceramics substrate |
JP3682552B2 (en) * | 1997-03-12 | 2005-08-10 | 同和鉱業株式会社 | Method for producing metal-ceramic composite substrate |
US6562660B1 (en) * | 2000-03-08 | 2003-05-13 | Sanyo Electric Co., Ltd. | Method of manufacturing the circuit device and circuit device |
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- 2011-10-19 TW TW100137839A patent/TWI458639B/en not_active IP Right Cessation
- 2011-12-08 US US13/314,392 patent/US20130098867A1/en not_active Abandoned
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US20060198994A1 (en) * | 2005-03-04 | 2006-09-07 | Yoshiharu Itahana | Ceramic circuit substrate and manufacturing method thereof |
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JP2017005182A (en) * | 2015-06-15 | 2017-01-05 | 株式会社アイン | Method for manufacturing ceramic wiring board |
CN105376931A (en) * | 2015-11-09 | 2016-03-02 | 广东方大索正光电照明有限公司 | Method for printing electronic line on ceramic |
EP3181006A1 (en) * | 2015-12-18 | 2017-06-21 | The Swatch Group Research and Development Ltd. | Zirconia panel element with selective colouring |
WO2017102239A3 (en) * | 2015-12-18 | 2017-09-14 | The Swatch Group Research And Development Ltd | External part made of zirconia with selective colouring |
US11144012B2 (en) | 2015-12-18 | 2021-10-12 | The Swatch Group Research And Development Ltd | Zirconia covering element with selective coloring |
JP2020072207A (en) * | 2018-11-01 | 2020-05-07 | 國家中山科學研究院 | Method of increasing adhesive strength between ceramic mounting plate and thick film circuit |
CN112501565A (en) * | 2020-11-23 | 2021-03-16 | 惠州市芯瓷半导体有限公司 | Method for plating metal on side wall of ceramic |
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CN103058699A (en) | 2013-04-24 |
TW201317131A (en) | 2013-05-01 |
TWI458639B (en) | 2014-11-01 |
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