TW201317131A - Method for selective metallization on ceramic substrate - Google Patents

Abstract

The present invention provides a method for selective metallization on ceramic substrate, which firstly selectively forms the active solder in a predetermined region on the surface of the ceramic substrate; after attaching the metal layer onto the ceramic substrate with active solder, conducting the brazing for the active solder; next, forming the etching resist layer on the metal layer and conducting the etching; finally, removing the etching resist layer. The method according to the present invention may be suitable for more severe processing environment, and simultaneously prevent the conchoidal fracture occurring between the ceramic substrate and the metal layer, so as to simplify the process and enhance the product yield.

Description

Method for selective metallization on a ceramic substrate

The present invention relates to a method of selectively metallizing a ceramic substrate, and more particularly to a method of forming a metal layer in a selective region on a ceramic substrate by brazing.

The methods for selective metallization on common ceramic substrates can be divided into two types, the case of metallic copper, the first being selectively etched after the copper clad laminate (DBC), and the other being The copper layer is selectively etched after selective deposition or copper plating (DPC) plating.

As shown in Fig. 1A-1E, it is a cross-sectional view of a conventional ceramic copper clad laminate process. The method of selective metallization by DBC is carried out at a high temperature and a specific oxygen content. In FIG. 1A, a copper layer 1 is provided and the surface of the copper layer 1 is oxidized to form a thin layer of cuprous oxide 11 at 1B. In the figure, the copper layer 1 and the ceramic substrate 2 are joined, and the eutectic layer 12 composed of the thin layer of the cuprous oxide 11 is cooled and then chemically bonded by Cu-Al-O to bond the copper layer 1 to the ceramic substrate 2. A ceramic copper clad laminate 5 is formed. Next, as shown in FIG. 1C and FIG. 1D, an etching resist layer 3 is formed on the ceramic copper clad laminate 5, and the exposed copper layer 1 on the ceramic copper clad laminate 5 is protected by the etching resist layer 3, and the exposed copper layer 1 is removed. As shown in FIG. 1E, the etch stop layer 3 is removed to complete selective metallization of the ceramic substrate.

However, there are still many disadvantages in the selective metallization by the DBC process. For example, the ceramic substrate and the copper layer are bonded at a eutectic temperature close to the melting point of copper. To avoid copper melting, the process can be operated with a very small temperature range. In the mass production of batches, the atmosphere and temperature at different positions of the high temperature furnace are difficult to be consistent, and there is a problem in yield. At present, the eutectic bonded ceramic substrate is mainly composed of alumina with low thermal conductivity, but the ceramic substrate with high thermal conductivity, such as aluminum nitride (AlN) or tantalum carbide (SiC), is insufficient or not wettable. The formation of Cu-Al-O bonds is difficult to bond with the copper layer, and the application of metallized ceramic substrates with high heat conduction or high heat dissipation is extremely limited. In addition, since the DBC process uses Cu-Cu2O eutectic bonding, it is impossible to use other metal materials to be bonded to the ceramic substrate except for the copper metal, and there is a non-alternating crystal between the ceramic substrate and the copper layer of the conventional DBC process. Conchoidal Fracture, which is irregularly broken, is mainly due to its internal stress caused by thermal expansion and contraction mismatch, which indirectly affects its reliability and service life.

Referring again to FIG. 2A-2E, it is a cross-sectional view of a conventional copper plating substrate process. The method of selectively metallizing by DPC is as follows. In FIG. 2A, the adhesion layer/conductive layer 4 is formed on the surface of the ceramic substrate 2, and then in the second layer BB, the formation of the adhesion layer/conductive layer 4 is prevented. a metal-deposited resist layer 6 and directly depositing a metal layer 10 of a specific thickness on the adhesive layer/conductive layer 4 exposed without being protected by the resist layer 6 by electroplating copper, as shown in FIG. 2C, followed by In the 2D and 2E diagrams, the resist layer 6 is removed first and then surface microetching is performed to complete selective metallization of the ceramic substrate.

Further, the process shown in FIG. 3A-3E is a cross-sectional view of another process of the conventional copper plated substrate, wherein, as shown in FIG. 3A, an adhesive layer/conductive layer 4 is first formed on the ceramic substrate 2, and then As shown in FIG. 3B, the surface of the ceramic substrate 2 is subjected to an electroplating copper process so that the copper layer 1 is formed on the adhesion layer/conductive layer 4 to form the ceramic copper clad laminate 5, and then, in the third C-picture, the ceramic copper clad laminate 5 is formed. Etching the resist layer 3, and then, as shown in FIG. 3D, etching and removing the exposed copper layer 6 and the bonding layer/conductive layer 4 on the ceramic copper clad laminate 5 without being protected by the etching resist layer 3, and finally removing the etching resistance Layer 3 forms a selective metallization of the ceramic substrate as shown in Fig. 3E.

However, there are disadvantages in the selective metallization of DBC, for example, the copper layer is bonded to the ceramic substrate by an adhesive layer, and the subsequent layer is physically bonded by sputtering or vapor deposition of titanium (Ti) or titanium tungsten (TiW). Therefore, adhesion is not as good as chemical bonding, and it cannot be used for high temperature or large temperature difference. In addition, the use of electroplating to form a copper layer (DPC process), due to the time-consuming plating deposition process, has a significant impact on the production capacity, and the formation of a copper layer by electroplating, the current density is affected by the plating tank design structure, the resist pattern and the edge of the ceramic substrate Under the influence of the effect, the thickness of the copper layer will be different. The materials used are limited by electroplatability, and only copper or nickel can be used, and other metals cannot be bonded to the ceramic substrate.

Therefore, how to provide a metallized ceramic substrate with high bonding degree can solve the applicable environment and material selection limitations of the conventional ceramic substrate and the metal layer, and can reduce the shell generated by the internal stress between the ceramic substrate and the metal layer. The case of rupture is a subject that a person skilled in the art should face.

In view of the above-discussed shortcomings of the prior art, it is an object of the present invention to utilize a brazing technique to provide a tight bond between the ceramic substrate and the metal layer.

To achieve the foregoing and other objects, the present invention provides a method for selectively metallizing a ceramic substrate, comprising: forming an active solder on a predetermined region of a surface of the ceramic substrate; attaching the metal layer to the active layer And soldering the active solder on the surface of the ceramic substrate of the solder; forming an etching resist layer on a predetermined region of the metal layer and etching the metal layer; and removing the etching resist layer.

In the above invention, the active solder is formed on the ceramic substrate, but the present invention is not limited thereto. In another embodiment, a layer of active solder may be selectively formed on the copper sheet, and then attached to the ceramic substrate and subsequent. Brazing and etching processes.

In one embodiment, the active solder has a specific proportion of active metal.

In another embodiment, the active solder is formed by printing, spraying or attaching.

In still another embodiment, the etch resist layer corresponds to the active solder formed on the surface of the ceramic substrate.

The invention further provides a method for selectively metallizing a ceramic substrate, comprising: performing a predetermined deep etching on a predetermined region of the metal layer to form an etching region and a retention region on the metal layer; forming an active solder on the metal On the remaining area of the layer; attaching a metal layer having the active solder to the ceramic substrate and brazing the active solder; and etching the metal layer to remove the etched area of the metal layer.

In one embodiment, the metal layer is a copper layer, an aluminum layer or a stainless steel layer.

Compared with the prior art, the present invention provides a method for selective metallization on a ceramic substrate, which is subjected to a brazing treatment with an active solder to increase the bonding reliability between the ceramic substrate and the metal layer, and Since the crystal is bonded, the material of the ceramic substrate and the metal layer is not limited as in the conventional method, and the process can be applied to an environment with high temperature or temperature difference, and the shell-like crack or adhesion between the conventional ceramic substrate and the metal layer can be avoided. Problems such as poor performance can not only simplify the process, but also improve product yield.

The other technical advantages of the present invention will be readily understood by those skilled in the art from this disclosure. The present invention may be carried out or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention.

The structure, the proportions, the sizes, and the like of the present invention are intended to be used in conjunction with the disclosure, and are not intended to limit the scope of the present invention. The modification of any structure, the change of the proportional relationship, or the adjustment of the size, should not fall within the scope of the technical content disclosed by the present invention without affecting the effects and the achievable effects of the present invention. . In the meantime, the terms "upper" or "one" as used in the specification are merely for convenience of description, and are not intended to limit the scope of the invention, and the relative relationship is changed or adjusted. Substantially changing the technical content is also considered to be within the scope of the invention.

First embodiment

4A to 4E are cross-sectional views showing a first embodiment of a method of selectively metallizing a ceramic substrate of the present invention, which is mainly subjected to a brazing treatment to produce a highly reliable ceramic substrate selective metallization structure. .

As shown in FIG. 4A, a ceramic substrate 20 is first provided, and a reactive solder 40 is selectively formed on a predetermined region on the ceramic substrate 20. Here, the selective means that the active solder is selectively coated on the ceramic substrate 20. 40 in certain areas. The active solder 40 may be a solder such as a nickel base or a silver base, and the active solder 40 contains a specific proportion of active metals, such as titanium (Ti), zirconium (Zr) or niobium (Nb), which contributes to The wettability of the active solder 40 on the surface of the ceramic substrate 20 is increased. Further, the active solder 40 may be a solder such as a paste, a powder or a film, and may be applied by printing, spraying or attaching.

As shown in FIG. 4B, the metal layer 10 is attached to the surface of the ceramic substrate 20 having the active solder 40, and then the active solder 40 is subjected to a brazing process so that the ceramic substrate 20 and the metal layer 10 have active solder. The 40 region produces a highly reliable bond to be a structure in which metal is applied over the ceramic substrate.

As shown in FIG. 4C, an etch stop layer 30 is formed on the metal layer 10, wherein the etch stop layer 30 is formed at a position corresponding to the position of the active solder 40 formed on the surface of the ceramic substrate 20, that is, the metal layer. The active solder 40 is provided on one side of the 10 side, and the corresponding position on the opposite side is where the etching resist layer 30 is formed.

As shown in FIG. 4D, the metal layer 10 is selectively etched, and the etch stop layer 30 formed on the metal layer 10 can be a protective layer formed by a dry film and a lithography process. The exposed metal layer 10 is etched away by the etch stop layer 30, wherein the etch removed region is the region where the active solder 40 is not coated.

As shown in FIG. 4E, after the etching of the metal layer 10 is completed, the etch stop layer 30 can be removed to complete selective metallization of the ceramic substrate.

In addition to the usual alumina, the ceramic substrate 20 may be made of aluminum nitride or tantalum carbide, and the metal layer 10 may be made of aluminum or stainless steel in addition to common copper. In the ceramic copper clad laminate structure shown in FIG. 1A-1E, the metal layer is joined by Cu-Cu2O eutectic bonding, so that other metal materials cannot be bonded to the substrate except for the copper metal. Moreover, as shown in Figures 2A-2E and 3A-3E, the electroplating copper method is used because the metal needs to be electroplated, so the material selection is also limited by the electroplatable material, and copper or nickel is more common. Therefore, the present invention utilizes active solder for brazing, so that the ceramic substrate 20 and the metal layer 10 are more elastic in material selection.

It should be noted that since the active solder 40 is not easily removed by etching, the present invention is characterized in that the metal layer 10 of the region where the active solder 40 is not coated is removed by selectively applying the active solder 40 to a specific region, and No solder residue remains on the ceramic substrate 20 removed from the metal layer 10, and selective metallization of the ceramic substrate is completed.

In addition, according to another embodiment of the embodiment, as shown in FIGS. 4A and 4B, the active solder 40 can be applied to the metal layer 10 first, and then the ceramic substrate 20 and the metal layer 10 can be joined. Selective metallization of the ceramic substrate can be accomplished.

Second embodiment

Referring to Figures 5A through 5D, there are shown cross-sectional views of a second embodiment of a method of forming a selective metal on a ceramic substrate of the present invention.

As shown in FIG. 5A, a metal layer 10 having an etched region 102 and a reserved region 101 is first provided, that is, the metal layer 10 is selectively etched through a dry film, photoresist, or other means such that the etched etched region 102 is etched. There is a certain depth, and the reserved area 101 will be bonded to the ceramic substrate 20.

As shown in FIG. 5B, an active solder 40 is formed on the remaining region 101 of the metal layer 10. The active solder 40 may be an active solder such as a nickel base or a silver base, wherein the active solder 40 contains a specific proportion of active metals. For example, titanium, zirconium or hafnium, and the like, may be a paste, powder or film (Foil) solder, and is applied to the reserved area 101 by printing, spraying or attaching.

As shown in FIG. 5C, the metal layer 10 having the active solder 40 is attached to the ceramic substrate 20, and then the active solder 40 is subjected to a brazing treatment so that the ceramic substrate 20 and the metal layer 10 have active solder 40 regions. Produces a high reliability joint.

As shown in FIG. 5D, an etching step of the metal layer 10 is performed, that is, the metal layer 10 is etched to remove the etched region 102 of the metal layer 10. In this case, the metal layer 10 is selectively etched, and the etched portion refers to the etched region 102 not coated with the active solder 40, so that the surface not attached to the metal layer 10 is exposed to complete the selection of the ceramic substrate. Metallization.

The etching step of the metal layer 10 can also perform a comprehensive etching on the metal layer 10. The etched portion refers to the etched region 102 and the remaining region 101. The metal layer of the reserved region 101 is thicker for use with the ceramic substrate 20. Bonding, so that after the etching rate is equal, the etched regions 102 after the comprehensive etching are all removed, and the remaining regions 101 bonded to the ceramic substrate 20 still have a certain thickness of the metal layer 10 remaining, and the selectivity of the ceramic substrate is completed. Metalization.

Similarly, the ceramic substrate 20 may be aluminum oxide, aluminum nitride or tantalum carbide, and the metal layer 10 may be made of copper, aluminum or stainless steel. The present invention is brazed with active solder in a conventional process. The ceramic substrate 20 and the metal layer 10 are extremely elastic in material selection.

In addition, according to another embodiment of the present embodiment, in the 5B and 5C drawings, the active solder 40 may be first applied to the ceramic substrate 20, and then bonded between the ceramic substrate 20 and the metal layer 10. The selective metallization of the ceramic substrate of the present embodiment can also be completed.

According to the manufacturing method of the present invention, since the hard soldering temperature can be operated in a large interval, the yield of the batch mass production is improved, and the material selection of the ceramic substrate and the metal layer is more flexible by the brazing process. It does not cause limitations in the way it is learned. In addition, the reliability of the hard solder joint is better, and the problem of shell-like cracking or poor adhesion between the ceramic substrate and the metal layer is solved, so that it can be used in an environment with high temperature or temperature difference. Finally, since the metal layer is specific The thickness plate is bonded to the ceramic substrate, so there is no problem of uneven thickness.

In summary, the method for selectively metallizing on the ceramic substrate of the present invention utilizes a brazing treatment to achieve close bonding between the metal layer and the ceramic substrate, and provides selectivity of the ceramic substrate compared to conventional techniques. Better metallization process and higher product yield.

The above embodiments are merely illustrative of the principles and effects of the invention and are not intended to limit the invention. Modifications and variations of the above-described embodiments can be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the scope of the claims described below.

1. . . Copper layer

11. . . Cuprous oxide

12. . . Eutectic layer

2. . . Ceramic substrate

3. . . Etch resist

4. . . Next layer/conducting layer

5. . . Ceramic copper clad laminate

6. . . Resistance layer

10. . . Metal layer

101. . . Reserved area

102. . . Etched area

20. . . Ceramic substrate

30. . . Etch resist

40. . . Active solder

1A to 1E are cross-sectional views showing a process of a conventional ceramic copper clad laminate;

2A to 2E are cross-sectional views showing a conventional copper plating substrate manufacturing method;

3A to 3E are cross-sectional views showing another process of a conventional copper plated substrate;

4A to 4E are cross-sectional views showing a first embodiment of a method of forming a selective metal on a ceramic substrate of the present invention;

5A to 5D are cross-sectional views showing a second embodiment of a method of forming a selective metal on a ceramic substrate of the present invention.

10. . . Metal layer

20. . . Ceramic substrate

40. . . Active solder

Claims (11)

A method for selectively metallizing a ceramic substrate, comprising: forming an active solder on a predetermined region of a surface of the ceramic substrate; attaching a metal layer to a surface of the ceramic substrate having the active solder and The active solder is subjected to a brazing treatment; an etching resist layer is formed on a predetermined region of the metal layer and the metal layer is etched; and the etching resist layer is removed. The method of claim 1, wherein the active solder is a nickel-based solder or a silver-based solder. The method of claim 1, wherein the active solder has a specific proportion of active metals. The method of claim 1, wherein the active solder is formed on the surface of the ceramic substrate by printing, spraying or attaching. The method of claim 1, wherein the etching resist layer is positioned to correspond to a position of the active solder formed on the surface of the ceramic substrate. The method of claim 1, wherein the metal layer is a copper layer, an aluminum layer or a stainless steel layer. A method for selectively metallizing a ceramic substrate, comprising: performing a predetermined deep etching on a predetermined region of the metal layer to form an etching region and a retention region on the metal layer; and forming an active solder on the remaining region of the metal layer Upper; attaching a metal layer having the active solder to the ceramic substrate and brazing the active solder; and etching the metal layer to remove the etched region of the metal layer. The method of claim 7, wherein the active solder is a nickel-based solder or a silver-based solder. The method of claim 7, wherein the active solder has a specific proportion of active metals. The method of claim 7, wherein the active solder is formed on the metal layer by printing, spraying or attaching. The method of claim 7, wherein the metal layer is a copper layer, an aluminum layer or a stainless steel layer.