CN105683413A - 用于陶瓷金属过渡物的陶瓷金属化的制造方法及陶瓷金属过渡物本身 - Google Patents

用于陶瓷金属过渡物的陶瓷金属化的制造方法及陶瓷金属过渡物本身 Download PDF

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CN105683413A
CN105683413A CN201480051813.1A CN201480051813A CN105683413A CN 105683413 A CN105683413 A CN 105683413A CN 201480051813 A CN201480051813 A CN 201480051813A CN 105683413 A CN105683413 A CN 105683413A
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D·根施
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Abstract

根据权利要求1和5的前序部分,本发明涉及用于低、中和高电压技术的陶瓷金属过渡物的陶瓷金属化的制造方法和陶瓷金属过渡物本身。为了避免钎焊箔材以便克服使用薄的钎焊箔材带来的问题、使制造更容易而且还有效得多,本发明在Ni层顶部上设置Ag层作为第三层,然后在顶部上布置金属部件并通过钎焊或回火来连接金属部件。

Description

用于陶瓷金属过渡物的陶瓷金属化的制造方法及陶瓷金属过渡物本身
根据权利要求1和5的前序部分,本发明涉及用于低、中和高电压技术的陶瓷金属过渡物的陶瓷金属化的制造方法和陶瓷金属过渡物本身。
用于低、中和高电压开关或开关装置的零件的陶瓷金属过渡物的陶瓷金属化的制造方法,其从主要由Al2O3材料组成的陶瓷体开始,该陶瓷体覆盖有标准应用中的第一MoMn(或钨(W))层和第二Ni层,通常在Ni层上顶部布置钎焊箔材。然后接下来是金属部件,随后在上述层的区域内将该金属部件与该陶瓷体钎焊。通常必须使用钎焊箔材。
为了获得与真空断路器的陶瓷体的气密连接,通常使用钎焊技术。在标准制造工艺(这里是零件的抽气工艺和最后的步骤:钎焊工艺)期间完成钎焊工艺。为了进行钎焊,必须增加额外的钎焊箔材,并且该额外的钎焊箔材在该陶瓷体的两侧上。
因此,本发明的目的是避免钎焊箔材以便克服使用薄的钎焊箔材带来的问题,使制造更容易而且还有效得多。
因此,由本发明给出的解决方案是在Ni层顶部上设置Ag层作为第三层,然后在顶部上布置金属部件并通过钎焊或回火来连接金属部件。
这样完全避免了使用钎焊箔材。
其优点是可以避免对于所有陶瓷金属连接而言单独使用钎焊箔材。
这通过减少所使用的元件来降低制造成本。
在进一步的实施方案中,在真空、惰性或活性气体(氢)环境下通过回火原位进行钎焊步骤。
在第一有利的替代方案中,电镀设置该Ag层。
在第二有利的替代方案中,通过冷气喷涂设置该Ag层。
根据用于低、中或高电压用途的开关的结构元件,过渡区由层系统组成,其中第一层是MoMn或钨,第二层是Ni,并且最后一层是Ni层顶部上的Ag,该最后一层通过在原位钎焊或者回火直接连接到金属部件。
本发明的一大优势在于该结构元件是真空断路器或设备,其中盖子借助上述特征气密连接到真空断路器/设备的陶瓷体。
本发明如附图所示。
图1示出了真空断路器的一部分。主要部分是圆柱形陶瓷体。在圆柱体的边缘处,所述边缘覆盖有不同金属的层系统。陶瓷体通常由Al2O3(氧化铝)陶瓷制成。
如此,在圆柱形陶瓷体的环形端表面上沉积的第一层是MoMn(钼锰)合金。顶部上的第二层是Ni(镍)。
下一步骤是在其顶部上沉积银层(Ag)。
随后盖子设置于上部Ag层的顶部上,然后通过回火或钎焊,这意味着温度在超过合金化点的温度下持续,导致在该区域中通过金属扩散的原位合金化过程。

Claims (6)

1.用于低、中和高电压的设备或开关或开关装置的零件的陶瓷金属过渡物的陶瓷金属化的制造方法,通过所述陶瓷金属过渡物将陶瓷体连接到金属部件,其中主要由Al2O3材料组成的陶瓷体至少覆盖有第一MoMn层和第二Ni层,
其特征在于,
在Ni层顶部上设置Ag层作为第三层,然后在顶部上布置该金属部件并通过钎焊或回火来连接该金属部件。
2.根据权利要求1所述的方法,
其特征在于,
在真空、惰性或活性气体(氢)环境下通过回火原位进行钎焊步骤。
3.根据权利要求1或2所述的方法,
其特征在于,
电镀设置该Ag层。
4.根据权利要求1或2所述的方法,
其特征在于,
通过冷气喷涂设置该Ag层。
5.用于低、中或高电压用途的开关或设备的结构元件,
由方法权利要求1至4中一项的特征制造的陶瓷金属复合元件,
其特征在于,
过渡区由层系统组成,其中第一层是MoMn或钨,第二层是Ni,且最后一层是Ni层顶部上的Ag,该最后一层通过在原位钎焊或者回火直接连接到金属部件。
6.根据权利要求5所述的结构元件,
其特征在于,
该结构元件是真空断路器或设备,其中盖子借助上述特征气密连接到真空断路器/设备的陶瓷体。
CN201480051813.1A 2013-09-20 2014-09-18 用于陶瓷金属过渡物的陶瓷金属化的制造方法及陶瓷金属过渡物本身 Pending CN105683413A (zh)

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EP13004596.6 2013-09-20
EP13004596 2013-09-20
PCT/EP2014/002539 WO2015039757A1 (en) 2013-09-20 2014-09-18 Method of manufacture of a ceramic metallization for ceramic metal transition, and ceramic metal transition itself

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CN114836726A (zh) * 2022-06-29 2022-08-02 亚芯半导体材料(江苏)有限公司 冷喷涂实现ito靶材背面金属化的方法

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WO2015039757A1 (en) 2015-03-26
JP6300903B2 (ja) 2018-03-28
KR20180049178A (ko) 2018-05-10
RU2016115182A (ru) 2017-10-25
US20160184913A1 (en) 2016-06-30
EP3047049A1 (en) 2016-07-27
RU2643737C2 (ru) 2018-02-05

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