WO2009078251A1 - スイッチング素子およびその製造方法 - Google Patents

スイッチング素子およびその製造方法 Download PDF

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Publication number
WO2009078251A1
WO2009078251A1 PCT/JP2008/071311 JP2008071311W WO2009078251A1 WO 2009078251 A1 WO2009078251 A1 WO 2009078251A1 JP 2008071311 W JP2008071311 W JP 2008071311W WO 2009078251 A1 WO2009078251 A1 WO 2009078251A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
switching device
conducting layer
manufacturing
same
Prior art date
Application number
PCT/JP2008/071311
Other languages
English (en)
French (fr)
Inventor
Naoki Banno
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to US12/808,392 priority Critical patent/US8664651B2/en
Priority to JP2009546197A priority patent/JP5458892B2/ja
Publication of WO2009078251A1 publication Critical patent/WO2009078251A1/ja

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

　第１電極(１０１)と、第２電極(１０２)と、第１電極(１０１)および第２電極(１０２)の間に配置された複合酸化物イオン伝導層(１０３)とを備える。複合酸化物イオン伝導層(１０３)は、金属酸化物を含む少なくとも２つの酸化物を備えている。また、第１電極(１０１)は、複合酸化物イオン伝導層(１０３)に電子を供給可能としている。また、第２電極(１０２)は、金属を含み、この金属のイオンを複合酸化物イオン伝送層(１０３)に供給可能としている。
PCT/JP2008/071311 2007-12-19 2008-11-25 スイッチング素子およびその製造方法 WO2009078251A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/808,392 US8664651B2 (en) 2007-12-19 2008-11-25 Switching device and method of manufacturing the same
JP2009546197A JP5458892B2 (ja) 2007-12-19 2008-11-25 スイッチング素子およびその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007326960 2007-12-19
JP2007-326960 2007-12-19

Publications (1)

Publication Number Publication Date
WO2009078251A1 true WO2009078251A1 (ja) 2009-06-25

Family

ID=40795370

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071311 WO2009078251A1 (ja) 2007-12-19 2008-11-25 スイッチング素子およびその製造方法

Country Status (3)

Country Link
US (1) US8664651B2 (ja)
JP (1) JP5458892B2 (ja)
WO (1) WO2009078251A1 (ja)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010079829A1 (ja) * 2009-01-09 2010-07-15 日本電気株式会社 スイッチング素子及びその製造方法
JP2010225750A (ja) * 2009-03-23 2010-10-07 Toshiba Corp 不揮発性半導体記憶装置
JP2012023374A (ja) * 2010-07-13 2012-02-02 Crossbar Inc 二端子抵抗性スイッチングデバイス構造及びその製造方法
WO2012111205A1 (en) * 2011-02-18 2012-08-23 Kabushiki Kaisha Toshiba Nonvolatile variable resistance element
JP2012169469A (ja) * 2011-02-15 2012-09-06 Toshiba Corp 不揮発性抵抗変化素子および不揮発性抵抗変化素子の製造方法
WO2013103122A1 (ja) * 2012-01-05 2013-07-11 日本電気株式会社 スイッチング素子及びその製造方法
JP2014017379A (ja) * 2012-07-09 2014-01-30 Toshiba Corp 不揮発性記憶装置
US9972778B2 (en) 2012-05-02 2018-05-15 Crossbar, Inc. Guided path for forming a conductive filament in RRAM
US10096653B2 (en) 2012-08-14 2018-10-09 Crossbar, Inc. Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
US10224370B2 (en) 2010-08-23 2019-03-05 Crossbar, Inc. Device switching using layered device structure
US10290801B2 (en) 2014-02-07 2019-05-14 Crossbar, Inc. Scalable silicon based resistive memory device
JP2020136690A (ja) * 2019-02-12 2020-08-31 富士通株式会社 電子装置及び認証装置
US10910561B1 (en) 2012-04-13 2021-02-02 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120241710A1 (en) * 2011-03-21 2012-09-27 Nanyang Technological University Fabrication of RRAM Cell Using CMOS Compatible Processes
JP5480233B2 (ja) * 2011-12-20 2014-04-23 株式会社東芝 不揮発性記憶装置、及びその製造方法
US9276041B2 (en) 2012-03-19 2016-03-01 Globalfoundries Singapore Pte Ltd Three dimensional RRAM device, and methods of making same
KR101956795B1 (ko) * 2013-11-15 2019-03-13 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
TWI488347B (zh) * 2014-04-08 2015-06-11 Winbond Electronics Corp 記憶體元件的形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006070773A1 (ja) * 2004-12-28 2006-07-06 Nec Corporation スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子
JP2006303343A (ja) * 2005-04-25 2006-11-02 Matsushita Electric Ind Co Ltd 半導体メモリとその動作方法
JP2006319028A (ja) * 2005-05-11 2006-11-24 Nec Corp スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子
JP2008244090A (ja) * 2007-03-27 2008-10-09 Nec Corp スイッチング素子およびスイッチング素子の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60034663D1 (de) 1999-02-11 2007-06-14 Univ Arizona Programmierbare mikroelektronische struktur sowie verfahren zu ihrer herstellung und programmierung
CN100407440C (zh) * 2003-07-18 2008-07-30 日本电气株式会社 开关元件、驱动开关元件的方法、可重写的逻辑集成电路以及存储元件
WO2007069725A1 (ja) 2005-12-15 2007-06-21 Nec Corporation スイッチング素子およびその製造方法
US8558211B2 (en) * 2006-03-30 2013-10-15 Nec Corporation Switching element and method for manufacturing switching element
FR2904704B1 (fr) * 2006-08-04 2008-12-05 Saint Gobain Dispositif electrochimique, et/ou elelctrocommandable du type vitrage et a proprietes optiques et/ou energetiques variables

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006070773A1 (ja) * 2004-12-28 2006-07-06 Nec Corporation スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子
JP2006303343A (ja) * 2005-04-25 2006-11-02 Matsushita Electric Ind Co Ltd 半導体メモリとその動作方法
JP2006319028A (ja) * 2005-05-11 2006-11-24 Nec Corp スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子
JP2008244090A (ja) * 2007-03-27 2008-10-09 Nec Corp スイッチング素子およびスイッチング素子の製造方法

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8586958B2 (en) 2009-01-09 2013-11-19 Nec Corporation Switching element and manufacturing method thereof
WO2010079829A1 (ja) * 2009-01-09 2010-07-15 日本電気株式会社 スイッチング素子及びその製造方法
JP2010225750A (ja) * 2009-03-23 2010-10-07 Toshiba Corp 不揮発性半導体記憶装置
US8120942B2 (en) 2009-03-23 2012-02-21 Kabushiki Kaisha Toshiba Semiconductor memory device
JP2012023374A (ja) * 2010-07-13 2012-02-02 Crossbar Inc 二端子抵抗性スイッチングデバイス構造及びその製造方法
US10224370B2 (en) 2010-08-23 2019-03-05 Crossbar, Inc. Device switching using layered device structure
JP2012169469A (ja) * 2011-02-15 2012-09-06 Toshiba Corp 不揮発性抵抗変化素子および不揮発性抵抗変化素子の製造方法
WO2012111205A1 (en) * 2011-02-18 2012-08-23 Kabushiki Kaisha Toshiba Nonvolatile variable resistance element
US8835896B2 (en) 2011-02-18 2014-09-16 Kabushiki Kaisha Toshiba Nonvolatile variable resistance element
US9391272B2 (en) 2011-02-18 2016-07-12 Kabushiki Kaisha Toshiba Nonvolatile variable resistance element
JP2012174754A (ja) * 2011-02-18 2012-09-10 Toshiba Corp 不揮発性抵抗変化素子
WO2013103122A1 (ja) * 2012-01-05 2013-07-11 日本電気株式会社 スイッチング素子及びその製造方法
US10910561B1 (en) 2012-04-13 2021-02-02 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory
US9972778B2 (en) 2012-05-02 2018-05-15 Crossbar, Inc. Guided path for forming a conductive filament in RRAM
JP2014017379A (ja) * 2012-07-09 2014-01-30 Toshiba Corp 不揮発性記憶装置
US10096653B2 (en) 2012-08-14 2018-10-09 Crossbar, Inc. Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
US10290801B2 (en) 2014-02-07 2019-05-14 Crossbar, Inc. Scalable silicon based resistive memory device
JP2020136690A (ja) * 2019-02-12 2020-08-31 富士通株式会社 電子装置及び認証装置
JP7205273B2 (ja) 2019-02-12 2023-01-17 富士通株式会社 電子装置及び認証装置

Also Published As

Publication number Publication date
US20110108829A1 (en) 2011-05-12
US8664651B2 (en) 2014-03-04
JP5458892B2 (ja) 2014-04-02
JPWO2009078251A1 (ja) 2011-04-28

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