JP2014017379A - 不揮発性記憶装置 - Google Patents
不揮発性記憶装置 Download PDFInfo
- Publication number
- JP2014017379A JP2014017379A JP2012153853A JP2012153853A JP2014017379A JP 2014017379 A JP2014017379 A JP 2014017379A JP 2012153853 A JP2012153853 A JP 2012153853A JP 2012153853 A JP2012153853 A JP 2012153853A JP 2014017379 A JP2014017379 A JP 2014017379A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- dielectric constant
- electrode
- memory cell
- resistance change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 19
- 150000002500 ions Chemical class 0.000 claims description 49
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims 1
- 230000008859 change Effects 0.000 abstract description 67
- 230000005012 migration Effects 0.000 abstract description 2
- 238000013508 migration Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 134
- 239000011229 interlayer Substances 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8416—Electrodes adapted for supplying ionic species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】実施形態に係る不揮発性記憶装置は、抵抗変化層と、第1の電極と、第2の電極と、を含むメモリセルを備える。前記抵抗変化層は、金属イオンの移動により高抵抗状態と低抵抗状態との間を可逆的に遷移する。前記第1の電極は、前記抵抗変化層の第1の面側に設けられ、前記金属イオンを供給する。前記第2の電極は、前記抵抗変化層の第2の面側に設けられる。さらに、前記メモリセルは、前記第1の電極と、前記抵抗変化層と、の間に設けられ、前記抵抗変化層の少なくとも一部よりも誘電率が高い高誘電率層を含む。
【選択図】図1
Description
RAM)、金属イオンの析出により電極間に形成される架橋の有無に起因する抵抗値変化に情報を対応させるCBRAM(Conductive
Bridging RAM)等が知られている。
図1は、第1実施形態に係るメモリセル10を表す模式図である。メモリセル10は、可変抵抗素子であり、金属イオンの移動により高抵抗状態と低抵抗状態との間を可逆的に遷移する抵抗変化層1を備える。抵抗変化層1の第1の面1aの側には、金属イオンを供給するイオンソース電極3(第1の電極)が設けられる。抵抗変化層1の第2の面1bの側には、イオンソース電極3に対向する対向電極5(第2電極)が設けられる。さらに、イオンソース電極3と、抵抗変化層1と、の間に、抵抗変化層1の少なくとも一部よりも誘電率が高い高誘電率層7が設けられる。
図7は、第2実施形態に係るメモリセル20を表す模式断面図である。メモリセル20の抵抗変化層2は、高誘電率層7に接して設けられた抵抗変化層2a(第1の層)と、対向電極5と抵抗変化層2aとの間に設けられた抵抗変化層2b(第2の層)を含む。抵抗変化層2bにおける金属イオンの移動度は、抵抗変化層2aにおける移動度よりも大きい。また、高誘電率層7は、抵抗変化層2aよりも誘電率が高い。
Claims (8)
- 金属イオンの移動により高抵抗状態と低抵抗状態との間を可逆的に遷移する抵抗変化層と、
前記抵抗変化層の第1の面側に設けられ、前記金属イオンを供給する第1の電極と、
前記抵抗変化層の第2の面側に設けられた第2の電極と、
前記第1の電極と、前記抵抗変化層と、の間に設けられ、前記抵抗変化層の少なくとも一部よりも誘電率が高い高誘電率層と、
を有するメモリセルを備えた不揮発性記憶装置。 - 前記抵抗変化層は、非結晶シリコン、シリコン酸化物、および、シリコン窒化物の少なくともいずれか1つを含む請求項1記載の不揮発性記憶装置。
- 前記抵抗変化層は、前記高誘電率層に接して設けられた第1の層と、前記第2の電極と前記第1の層との間に設けられ、前記第1の層よりも前記金属イオンの移動度が大きな第2の層と、を含み、
前記高誘電率層は、前記第1の層よりも誘電率が高い請求項1または2に記載の不揮発性記憶装置。 - 前記第1の層は、シリコン酸化物およびシリコン窒化物の少なくともいずれか1つを含み、
前記第2の層は、非結晶シリコンを含む請求項3記載の不揮発性記憶装置。 - 前記高誘電率層は、Al2O3、HfO2、Y2O3、La2O3、TiO2およびTa2O5の少なくともいずれか1つを含む請求項1〜4のいずれか1つに記載の不揮発性記憶装置。
- 前記第1の電極は、Cu、Ag、Al、CoおよびNiの少なくともいずれか1つを含む請求項1〜5のいずれか1つに記載の不揮発性記憶装置。
- 前記第2の電極は、n形半導体層を含む請求項1〜6のいずれか1つに記載の不揮発性記憶装置。
- 第1の方向に延在する複数のワード線と、
前記第1の方向に交差する第2の方向に延在する複数のビット線と、
をさらに備え、
前記ワード線と前記ビット線が交差する複数の交点のそれぞれにおいて、前記ワード線と前記ビット線との間に前記メモリセルが設けられた請求項1〜7のいずれか1つに記載の不揮発性記憶装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012153853A JP5783961B2 (ja) | 2012-07-09 | 2012-07-09 | 不揮発性記憶装置 |
US13/770,463 US8822966B2 (en) | 2012-07-09 | 2013-02-19 | Nonvolatile memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012153853A JP5783961B2 (ja) | 2012-07-09 | 2012-07-09 | 不揮発性記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014017379A true JP2014017379A (ja) | 2014-01-30 |
JP5783961B2 JP5783961B2 (ja) | 2015-09-24 |
Family
ID=49877833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012153853A Expired - Fee Related JP5783961B2 (ja) | 2012-07-09 | 2012-07-09 | 不揮発性記憶装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8822966B2 (ja) |
JP (1) | JP5783961B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017055082A (ja) * | 2015-09-11 | 2017-03-16 | 株式会社東芝 | 不揮発性記憶装置の製造方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101445568B1 (ko) * | 2013-05-14 | 2014-09-30 | 연세대학교 산학협력단 | 비선형 특성을 향상시킨 저항 스위칭 메모리 소자 및 그 제조 방법 |
US9263675B2 (en) * | 2014-02-19 | 2016-02-16 | Micron Technology, Inc. | Switching components and memory units |
US9142764B1 (en) * | 2014-12-08 | 2015-09-22 | Intermolecular, Inc. | Methods of forming embedded resistors for resistive random access memory cells |
JP6433860B2 (ja) * | 2015-08-06 | 2018-12-05 | 東芝メモリ株式会社 | 記憶装置 |
KR102395193B1 (ko) | 2015-10-27 | 2022-05-06 | 삼성전자주식회사 | 메모리 소자 및 그 제조 방법 |
US10693062B2 (en) * | 2015-12-08 | 2020-06-23 | Crossbar, Inc. | Regulating interface layer formation for two-terminal memory |
US9859002B2 (en) | 2016-03-17 | 2018-01-02 | Toshiba Memory Corporation | Semiconductor memory device |
JP2018163987A (ja) | 2017-03-24 | 2018-10-18 | 東芝メモリ株式会社 | 半導体記憶装置およびその製造方法 |
JP2019054208A (ja) * | 2017-09-19 | 2019-04-04 | 東芝メモリ株式会社 | 記憶装置 |
US10950786B2 (en) * | 2018-05-17 | 2021-03-16 | Macronix International Co., Ltd. | Layer cost scalable 3D phase change cross-point memory |
JP2020047736A (ja) | 2018-09-18 | 2020-03-26 | キオクシア株式会社 | 半導体装置 |
CN109524544B (zh) * | 2018-10-23 | 2022-10-21 | 中国科学院微电子研究所 | 一种阻变存储器的制备方法 |
US11152568B2 (en) * | 2019-06-27 | 2021-10-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Top-electrode barrier layer for RRAM |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070008773A1 (en) * | 2005-07-11 | 2007-01-11 | Matrix Semiconductor, Inc. | Nonvolatile memory cell comprising switchable resistor and transistor |
WO2009078251A1 (ja) * | 2007-12-19 | 2009-06-25 | Nec Corporation | スイッチング素子およびその製造方法 |
JP2010016381A (ja) * | 2008-07-03 | 2010-01-21 | Gwangju Inst Of Science & Technology | 酸化物膜と固体電解質膜を備える抵抗変化メモリ素子およびこれの動作方法 |
WO2010042732A2 (en) * | 2008-10-08 | 2010-04-15 | The Regents Of The University Of Michigan | Silicon-based nanoscale resistive device with adjustable resistance |
WO2010064446A1 (ja) * | 2008-12-04 | 2010-06-10 | パナソニック株式会社 | 不揮発性記憶素子及び不揮発性記憶装置 |
WO2011158691A1 (ja) * | 2010-06-16 | 2011-12-22 | 日本電気株式会社 | 抵抗変化素子及び抵抗変化素子の製造方法 |
JP2012043896A (ja) * | 2010-08-17 | 2012-03-01 | Toshiba Corp | 不揮発性半導体記憶装置 |
US20120091420A1 (en) * | 2010-10-15 | 2012-04-19 | Kabushiki Kaisha Toshiba | Nonvolatile resistance change device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2880177B1 (fr) | 2004-12-23 | 2007-05-18 | Commissariat Energie Atomique | Memoire pmc ayant un temps de retention et une vitesse d'ecriture ameliores |
US7423906B2 (en) | 2006-03-14 | 2008-09-09 | Infineon Technologies Ag | Integrated circuit having a memory cell |
US7382647B1 (en) | 2007-02-27 | 2008-06-03 | International Business Machines Corporation | Rectifying element for a crosspoint based memory array architecture |
JP2011066347A (ja) * | 2009-09-18 | 2011-03-31 | Toshiba Corp | 半導体記憶装置 |
JP2011066285A (ja) * | 2009-09-18 | 2011-03-31 | Toshiba Corp | 不揮発性記憶素子および不揮発性記憶装置 |
JP2011146111A (ja) * | 2010-01-18 | 2011-07-28 | Toshiba Corp | 不揮発性記憶装置及びその製造方法 |
JP5630021B2 (ja) | 2010-01-19 | 2014-11-26 | ソニー株式会社 | 記憶素子および記憶装置 |
JP5732827B2 (ja) * | 2010-02-09 | 2015-06-10 | ソニー株式会社 | 記憶素子および記憶装置、並びに記憶装置の動作方法 |
-
2012
- 2012-07-09 JP JP2012153853A patent/JP5783961B2/ja not_active Expired - Fee Related
-
2013
- 2013-02-19 US US13/770,463 patent/US8822966B2/en not_active Expired - Fee Related
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070008773A1 (en) * | 2005-07-11 | 2007-01-11 | Matrix Semiconductor, Inc. | Nonvolatile memory cell comprising switchable resistor and transistor |
WO2007008902A2 (en) * | 2005-07-11 | 2007-01-18 | Sandisk 3D Llc | Nonvolatile memory cell comprising switchable resistor and transistor |
JP2009500867A (ja) * | 2005-07-11 | 2009-01-08 | サンディスク スリーディー,エルエルシー | 切り換え可能な抵抗器とトランジスタとを備えた不揮発性メモリセル |
WO2009078251A1 (ja) * | 2007-12-19 | 2009-06-25 | Nec Corporation | スイッチング素子およびその製造方法 |
US20110108829A1 (en) * | 2007-12-19 | 2011-05-12 | Naoki Banno | Switching device and method of manufacturing the same |
JP2010016381A (ja) * | 2008-07-03 | 2010-01-21 | Gwangju Inst Of Science & Technology | 酸化物膜と固体電解質膜を備える抵抗変化メモリ素子およびこれの動作方法 |
WO2010042732A2 (en) * | 2008-10-08 | 2010-04-15 | The Regents Of The University Of Michigan | Silicon-based nanoscale resistive device with adjustable resistance |
WO2010064446A1 (ja) * | 2008-12-04 | 2010-06-10 | パナソニック株式会社 | 不揮発性記憶素子及び不揮発性記憶装置 |
WO2011158691A1 (ja) * | 2010-06-16 | 2011-12-22 | 日本電気株式会社 | 抵抗変化素子及び抵抗変化素子の製造方法 |
JP2012043896A (ja) * | 2010-08-17 | 2012-03-01 | Toshiba Corp | 不揮発性半導体記憶装置 |
US20120091420A1 (en) * | 2010-10-15 | 2012-04-19 | Kabushiki Kaisha Toshiba | Nonvolatile resistance change device |
JP2012089567A (ja) * | 2010-10-15 | 2012-05-10 | Toshiba Corp | 不揮発性抵抗変化素子 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017055082A (ja) * | 2015-09-11 | 2017-03-16 | 株式会社東芝 | 不揮発性記憶装置の製造方法 |
US9947866B2 (en) | 2015-09-11 | 2018-04-17 | Toshiba Memory Corporation | Nonvolatile memory device manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
US20140008603A1 (en) | 2014-01-09 |
JP5783961B2 (ja) | 2015-09-24 |
US8822966B2 (en) | 2014-09-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5783961B2 (ja) | 不揮発性記憶装置 | |
US9006793B2 (en) | Non-volatile memory cell, non-volatile memory cell array, and method of manufacturing the same | |
US7897453B2 (en) | Dual insulating layer diode with asymmetric interface state and method of fabrication | |
US9437658B2 (en) | Fully isolated selector for memory device | |
JP6344243B2 (ja) | スイッチング素子、および半導体スイッチング装置の製造方法 | |
JP5025696B2 (ja) | 抵抗変化メモリ | |
US9159919B2 (en) | Variable resistance memory device and method for fabricating the same | |
US9947866B2 (en) | Nonvolatile memory device manufacturing method | |
CN104659206B (zh) | 形成电压特性改进的电阻式随机存取存储器及其形成方法 | |
US9082973B2 (en) | Resistance random access memory device | |
US10096654B2 (en) | Three-dimensional resistive random access memory containing self-aligned memory elements | |
JP2013197422A (ja) | 不揮発性記憶装置及びその製造方法 | |
US20130270510A1 (en) | Nonvolatile semiconductor memory element, nonvolatile semiconductor memory device, and method for manufacturing nonvolatile semiconductor memory device | |
JPWO2011090152A1 (ja) | 半導体装置及びその製造方法 | |
US20230070508A1 (en) | Increasing selector surface area in crossbar array circuits | |
JP2007158325A (ja) | 双方向ショットキーダイオードを備えるクロスポイント型抵抗メモリ装置 | |
KR101860946B1 (ko) | 3차원 입체 구조를 가지는 비휘발성 메모리 | |
CN111584711A (zh) | 一种rram器件及形成rram器件的方法 | |
US20170338409A1 (en) | Switching element, resistive memory device including switching element, and methods of manufacturing the same | |
JP2012216725A (ja) | 抵抗記憶装置およびその製造方法 | |
JP2013120845A (ja) | メタルブリッジ型記憶装置 | |
US20240237562A1 (en) | Semiconductor device and method for fabricating the same | |
US10157964B2 (en) | Memory device and method for manufacturing the same | |
JP2012084557A (ja) | 不揮発性メモリセル、抵抗可変型不揮発性メモリ装置および不揮発性メモリセルの設計方法 | |
TW202429550A (zh) | 用於製造電極的方法和包括該電極的半導體裝置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140826 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150331 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150407 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150608 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150623 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150721 |
|
LAPS | Cancellation because of no payment of annual fees |