KR20160044000A - 세라믹 금속 전이를 위한 세라믹 금속화의 제조 방법 및 세라믹 금속 전이 자체 - Google Patents

세라믹 금속 전이를 위한 세라믹 금속화의 제조 방법 및 세라믹 금속 전이 자체 Download PDF

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KR20160044000A
KR20160044000A KR1020167006772A KR20167006772A KR20160044000A KR 20160044000 A KR20160044000 A KR 20160044000A KR 1020167006772 A KR1020167006772 A KR 1020167006772A KR 20167006772 A KR20167006772 A KR 20167006772A KR 20160044000 A KR20160044000 A KR 20160044000A
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brazing
metal transition
ceramic metal
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디트마 겐치
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에이비비 테크놀로지 아게
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Abstract

본 발명은 제1항 내지 제5항에 따라, 저, 중 및 고전압 기술의 사용을 위하여, 세라믹 금속 전이를 위한 세라믹 금속화의 제조 방법 및 세라믹 금속 천이 그 자체에 관한 것이다. 브레이징 호일의 사용에 따른 문제점을 극복하기 위하여 브레이징 호일을 피하기 위해, 더 쉬운 제조뿐만 아니라, 더 효과적이기 위해 본 발명은 Ni-층의 상부에 제 3층으로서 Ag-층이 놓이고 그 후 금속 부분이 상부에 놓이고 브레이징 또는 템퍼링에 의해 연결된다.

Description

세라믹 금속 전이를 위한 세라믹 금속화의 제조 방법 및 세라믹 금속 전이 자체{METHOD OF MANUFACTURE OF A CERAMIC METALLIZATION FOR CERAMIC METAL TRANSITION, AND CERAMIC METAL TRANSITION ITSELF}
본 발명은, 청구항 1 및 청구항 5의 전문에 따라, 저, 중, 고전압에서의 사용에서의 세라믹 메탈 금속 전이를 위한 세라믹 금속화의 제조의 방법과 세라믹 메탈 전이 그 자체에 관한 것이다.
저, 중, 고전압 스위치 또는 스위칭 수단의 구성요소의 사용에서의 세라믹 금속 전이를 위한 세라믹 금속화의 제조 방법으로서, 주로 Al2O3 금속으로 구성되는 세라믹 바디로 시작하고, MoMn{또는 텅스텐(W)}의 표준 어플리케이션에서 제1층 및 Ni의 제2층으로 덮힌다. Ni-층 위에서, 보통 브레이징 호일은 상부에 놓일 것이다. 그리고 나서 메탈 부분을 따르고, 그 후 이는 전술한 층의 영역의 세라믹 바디로 브레이징 될 것이다. 일반적으로 브레이징 호일은 사용에 필수적이다.
본 발명의 목적은 본 발명은, 청구항 1 및 청구항 5의 전문에 따라, 저, 중, 고전압에서의 사용에서의 세라믹 메탈 금속 전이를 위한 세라믹 금속화의 제조의 방법과 세라믹 메탈 전이 그 자체를 제공하기 위한 것이다.
진공 인터럽터의 세라믹 바디에 기밀(gas tight) 연결을 얻기 위해 일반적으로 브레이징 기술이 사용된다. 브레이징 프로세스는 구성 요소의 탈기 프로세스인 표준 제조 과정 동안 행해지고, 가장 마지막 단계에서 브레이징이 처리된다. 브레이징을 수행하기 위하여, 세라믹 바디의 양쪽 측면 상에 추가적인 브레이징 호일이 추가되어야한다.
따라서, 발명의 목적은, 브레이징 호일을 피하기 위하여, 얇은 브레이징 호일의 사용에 따른 문제점을 극복하기 위하여, 제조를 더 쉽게 만드는 것 뿐만 아니라, 더 효과적으로 만드는 것이다.
따라서, 본 발명에 의해 주어진 해결 방안은, Ni-층의 상부에 제3층으로서 Ag-층이 위치되고, 그 후 메탈 부분이 상부에 놓이고, 브레이징 및 템퍼링에 의해 연결되는 것이다.
이는 브레이징 호일의 사용을 완전히 피한다.
이것의 장점은 모든 세라믹 메탈 연결을 위한 브레이징 호일의 분리 사용이 피해질 수 있다는 것이다.
이는 사용되는 요소의 감소에 따라, 제조 비용이 감소된다.
본 발명을 통해 청구항 1 및 청구항 5의 전문에 따라, 저, 중, 고전압에서의 사용에서의 세라믹 메탈 금속 전이를 위한 세라믹 금속화의 제조의 방법을 제공할 수 있다.
도 1은 진공 인터럽터의 부분을 도시한다.
추가적인 실시예에서, 브레이징 단계는 템퍼링에 의해 원 위치에서 진공, 불활성 또는 활성 가스(수소) 하에서 프로세싱된다.
대안적인 첫 번째 장점으로는, Ag-층이 갈바니전기에 의해 위치될 것이다.
대안적인 두 번째 장점으로는, Ag-층이 냉가스 스프레이에 의해 위치될 것이다.
저-, 중- 또는 고전압 사용을 위한 스위치의 구성의 요소에 따라, 전이 영역은 MoMn 또는 텅스텐의 제 1 층 및 Ni의 제 2층 및 Ni-층의 상부 상에 Ag의 최종 층을 갖는 층 시스템으로 구성되며, 이는 그 자리에서 브레이징 또는 템퍼링함으로써 메탈 부분에 직접 연결된다.
구성의 요소에 의한 본 발명의 결과의 가장 큰 장점은 캡이 전술된 특징들에 의해 진공 인터럽터/디바이스의 세라믹 바디에 기밀하게 연결되는 진공 인터럽터 또는 디바이스이다.
본 발명은 도면에 도시된다.
도 1은 진공 인터럽터의 일부분을 도시한다. 메인 부분은 원통형의 세라믹 바디이다. 원통형 바디의 에지(edge)에서, 에지들은 상이한 메탈의 층 시스템으로 덮힌다. 세라믹 바디는 보통 Al2O3(Aluminiumoxid) 세라믹으로 구성된다.
따라서, 원통형 세라믹 바디의 링 단면 위에 적층된 제 1층은 MoMn(Molydenum Manganese)합금 중에 있다. 상부의 제 2층은 Ni(니켈) 중에 있다. 다음 층은 그 위에 은 층(Ag)을 적층한다. 그리고 나서, 캡은 상부의 Ag-층 위에 위치되고, 그 후 템퍼링 또는 브레이징함으로써 이는, 합금하는 지점에 걸친 온도에서 진행하는 온도를 의미하며, 그 결과로 그 영역에서 금속의 확산에 의해 그 자리에서 합금을 진행한다.

Claims (6)

  1. 저-, 중-, 고전압 디바이스 또는 스위치 또는 스위칭 수단의 구성요소의 사용에서의 세라믹 금속 전이를 위한 세라믹 금속화의 제조 방법으로서, 저-, 중-, 고전압 디바이스 또는 스위치 또는 스위칭 수단에 의해 세라믹 바디가 금속 부분에 연결되고, 여기서 주로 Al2O3 금속으로 구성되는 세라믹 바디는 적어도 MoMn의 제 1층 및 Ni의 제 2층으로 덮이는, 세라믹 금속 전이를 위한 세라믹 금속화의 제조 방법에 있어서,
    Ni-층의 상부 상에 제 3층으로서 Ag-층이 배치될 것이고, 그리고 나서 금속 부분은 상부에 놓일 것이고 브레이징 또는 템퍼링에 의해 연결되는 것을 특징으로하는, 세라믹 금속 전이를 위한 세라믹 금속화의 제조 방법.
  2. 제1항에 있어서, 브레이징 단계는 템퍼링에 의해 진공, 비활성 또는 활성 가스(수소) 환경 하에서 그 자리에서 진행되는, 세라믹 금속 전이를 위한 세라믹 금속화의 제조 방법.
  3. 제1항 또는 제2항에 있어서, Ag-층은 갈바니전기에 의해 위치되는, 세라믹 금속 전이를 위한 세라믹 금속화의 제조 방법.
  4. 제1항 또는 제2항에 있어서, Ag-층은 냉가스 스프레이에 의해 위치되는, 세라믹 금속 전이를 위한 세라믹 금속화의 제조 방법.
  5. 저-, 중- 또는 고전압 사용을 위한 스위치 또는 디바이스의 구성의 요소로서, 세라믹 금속 화합물 요소(compound element)는 제1항 내지 제4항의 방법 중 하나의 특징에 의해 제조되는 것으로서, 세라믹 금속 화합물 요소는, 전이 영역은 MoMn 또는 텅스텐의 제 1 층 및 Ni의 제 2층 및 Ni-층의 상부 상에 Ag의 최종 층을 갖는 층 시스템으로 구성되고, 이는 그 자리에서 브레이징 또는 템퍼링함으로써 금속 부분에 직접 연결되는 것을 특징으로 하는, 구성의 요소.
  6. 제5항에 있어서, 구성의 요소는 캡이 전술한 특징들에 의해 진공 인터럽터/디바이스의 세라믹 바디에 기밀하게 연결되는 진공 인터럽터 또는 디바이스인 것을 특징으로 하는, 구성의 요소.
KR1020167006772A 2013-09-20 2014-09-18 세라믹 금속 전이를 위한 세라믹 금속화의 제조 방법 및 세라믹 금속 전이 자체 KR20160044000A (ko)

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