JP4962409B2 - 半導体装置及びその製法 - Google Patents
半導体装置及びその製法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 113
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 177
- 230000001681 protective effect Effects 0.000 claims description 42
- 230000015572 biosynthetic process Effects 0.000 claims description 40
- 238000005530 etching Methods 0.000 claims description 23
- 239000012790 adhesive layer Substances 0.000 claims description 10
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 abstract description 27
- 239000000758 substrate Substances 0.000 description 35
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 230000002093 peripheral effect Effects 0.000 description 13
- 229910052759 nickel Inorganic materials 0.000 description 8
- 238000000926 separation method Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002577 polybenzoxazole Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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Description
よって、本発明は、ワイヤ及び半田との接続性の高い電極を有する半導体装置を提供することを目的とする。
図1に示すように、本実施の形態の半導体装置は、下部半導体素子としての下部IGBT(絶縁ゲート型バイポーラトランジスタ)(1)と、下部IGBT(1)の上面(1a)に形成された下部電極層(5)と、下部電極層(5)と離間して下部IGBT(1)の上面(1a)に形成された離間電極層(ゲートパッド)(18)と、下部電極層(5)の上面(5a)に形成された上部電極層(6)と、上部電極層(6)の上面(6a)に接着剤層としての半田(7)により固着された上部半導体素子としての上部IGBT(2)と、上部IGBT(2)の上面(2a)に形成された最上部電極層(27)と、上部電極層(6)、離間電極層(18)及び下部電極層(5)等の一部を被覆する非導電性の保護膜(9)と、最上部電極層(27)等の一部を被覆する非導電性の保護膜(29)とを備える。下部電極層(5)は、上部電極層(6)に設けた切欠部(36)と保護膜(9)に設けた開口部(19)とにより、外部に露出する結線領域(15)を有する。結線領域(15)は、平坦に形成され、リード細線としてのワイヤ(8)の一方の端部が接続(ワイヤボンディング)される。
Claims (2)
- 下部半導体素子と、該下部半導体素子の上面に形成された下部電極層と、該下部電極層の上面に形成された上部電極層と、該上部電極層の上面に固着された上部半導体素子と、前記上部電極層の上面に前記上部半導体素子を固着する接着剤層とを備え、
前記下部電極層の上面と前記上部電極層の上面とを異なる材質により形成し、
前記下部半導体素子の上面は、複数のセルを形成したセル形成領域と、セルを形成しない非形成領域とを備え、
前記上部電極層は、前記下部半導体素子の非形成領域上で前記上部電極層のエッチングにより形成された切欠部を備え、
前記下部電極層の上面に形成される結線領域を前記切欠部から前記上部電極層の外部に部分的に露出させて、前記結線領域にリード細線を接続し、
前記上部電極層の上面に設けた固着領域に前記上部半導体素子を前記接着剤層により固着し、
前記上部半導体素子よりも幅の大きい開口部を有する非導電性の保護膜を前記上部電極層の固着領域の外周に沿って環状に形成して、前記保護膜により前記上部電極層の一部を被覆し、
前記接着剤層は、前記保護膜よりも高く前記保護膜の開口部内から前記保護膜上に乗り上げ且つ前記上部半導体素子よりも幅広いことを特徴とする半導体装置。 - 複数のセルを形成したセル形成領域と、セルを形成しない非形成領域とを上面に有する下部半導体素子の前記上面に下部電極層を形成する工程と、
前記下部電極層の上面とは異なる材質により成る上面を有する上部電極層を前記下部電極層の上面に形成する工程と、
前記上部電極層の上面に固着領域を設けると共に、上部半導体素子よりも幅の大きい開口部を有する非導電性の保護膜を前記上部電極層の固着領域の外周に沿って環状に形成して、前記上部電極層の一部を前記保護膜により被覆する工程と、
前記セル形成領域よりも前記下部半導体素子の外側で前記上部電極層をエッチング除去して形成される前記上部電極層の切欠部を通じて外部に部分的に露出する結線領域を前記下部電極層の上面に形成する工程と、
前記上部半導体素子よりも幅広く且つ前記保護膜よりも高く前記保護膜の開口部内から前記保護膜上に乗り上げる接着剤層により前記上部電極層の固着領域に前記上部半導体素子を固着する工程と、
前記結線領域にリード細線の端部を接続する工程とを含むことを特徴とする半導体装置の製法。
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JPS61239656A (ja) * | 1985-04-16 | 1986-10-24 | Citizen Watch Co Ltd | 半導体装置 |
JPS62152135A (ja) * | 1985-12-25 | 1987-07-07 | Mitsubishi Electric Corp | 半導体装置 |
JPH118385A (ja) * | 1997-06-18 | 1999-01-12 | Hitachi Ltd | 内燃機関用点火装置およびigbt |
WO1999004433A2 (en) * | 1997-07-19 | 1999-01-28 | Koninklijke Philips Electronics N.V. | Mcm semiconductor device assemblies and circuits |
US6511901B1 (en) * | 1999-11-05 | 2003-01-28 | Atmel Corporation | Metal redistribution layer having solderable pads and wire bondable pads |
JP3630070B2 (ja) * | 2000-03-30 | 2005-03-16 | 株式会社デンソー | 半導体チップおよび半導体装置 |
EP1231635A1 (en) * | 2001-02-09 | 2002-08-14 | STMicroelectronics S.r.l. | Method for manufacturing an electronic power device and a diode in a same package |
JP4682501B2 (ja) * | 2003-08-28 | 2011-05-11 | サンケン電気株式会社 | 絶縁ゲート型半導体素子およびこれを備えた半導体集積回路装置 |
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