JP2009071059A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2009071059A JP2009071059A JP2007238289A JP2007238289A JP2009071059A JP 2009071059 A JP2009071059 A JP 2009071059A JP 2007238289 A JP2007238289 A JP 2007238289A JP 2007238289 A JP2007238289 A JP 2007238289A JP 2009071059 A JP2009071059 A JP 2009071059A
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Abstract
【課題】 電力用の半導体装置は、小型化または低電圧駆動の市場要求が高まっている。しかし、高耐圧および大電流容量を実現するためには、一般にトランジスタセル数を多くし、基板(チップ)サイズも大きく確保する必要がある。つまり、少なくとも現状の特性を維持しつつ半導体装置の小型化を図るのは困難であった。
【解決手段】2つの実装領域を有する矩形のヘッダーを折り返し、2つの半導体チップを対向する実装領域と固着することにより、パッケージの実装面積は従来の1つ分の面積でありながら、半導体チップの積層構造が実現し、半導体チップ2つ分の特性を得られる。従って、半導体チップ1つの場合と比較して、トランジスタセル数の増加によりオン抵抗が低減し、低電圧駆動が可能となる。また大電流化が図れる。あるいは2つの半導体チップを、並べてヘッダー上に実装する場合と比較してパッケージ外形の実装面積の小型化が図れる。
【選択図】 図1
Description
2 第2半導体チップ
3 第1フレーム
31 リード部
32 ヘッダー部
33 第1実装領域
34 第2実装領域
35 折り返し線
4 第2フレーム
41 リード部
411 第1リード部
412 第2リード部
5 樹脂層
11 第1バンプ電極
11e エミッタバンプ電極
11g ゲートバンプ電極
21 第2バンプ電極
21e エミッタバンプ電極
21g ゲートバンプ電極
100 半導体装置
101 p+型半導体層
102a n+型半導体層
102b n−型半導体層
102 ドリフト領域
104 ベース領域
111 ゲート絶縁膜
113 ゲート電極
114 ボディ領域
115 エミッタ領域
116 層間絶縁膜
118 エミッタ電極
119 ゲート配線
120 コレクタ電極
121 絶縁膜
122 ガードリング
210 半導体チップ
211 ゲートパッド電極
212 エミッタ電極
213 フレーム
214 ゲート端子
215 エミッタ端子
216 コレクタ端子
217 ワイヤ
218 樹脂層
E エミッタ端子
G ゲート端子
C コレクタ端子
Claims (5)
- 第1辺と第2辺を有する矩形状で第1実装領域と第2実装領域を有し、該第1実装領域と第2実装領域間の前記第1辺に平行な折り返し線で前記第2辺の延在方向に折り返されたヘッダー部と、前記第1辺の延在方向に導出するリード部と、を有する第1フレームと、
前記第1実装領域に固着され、一主面に第1バンプ電極が設けられるディスクリートの第1半導体チップと、
前記第2実装領域に固着され、一主面に第2バンプ電極が設けられるディスクリートの第2半導体チップと、
前記第1半導体チップおよび前記第2半導体チップに接続し、前記第1辺の延在方向に導出するリード部を有する第2フレームと、
を具備することを特徴とする半導体装置。 - 前記第2フレームは前記第1半導体チップおよび前記第2半導体チップの間に配置されることを特徴とする請求項1に記載の半導体装置。
- 前記第1半導体チップと前記第2半導体チップは、前記第2フレームを介して対向配置され、前記第1バンプ電極および前記第2バンプ電極が前記第2フレームの両主面に接続することを特徴とする請求項2に記載の半導体装置。
- 前記第2フレームの前記リード部は、前記第1半導体チップおよび前記第2半導体チップのそれぞれの第1端子および第2端子として外部に導出する第1リード部および第2リード部を含むことを特徴とする請求項3に記載の半導体装置。
- 前記第1フレームの前記リード部は、前記第1半導体チップおよび前記第2半導体チップのそれぞれの第3端子として外部に導出することを特徴とする請求項1に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007238289A JP2009071059A (ja) | 2007-09-13 | 2007-09-13 | 半導体装置 |
US12/199,611 US20090072369A1 (en) | 2007-09-13 | 2008-08-27 | Semiconductor device |
CNA2008102153896A CN101388388A (zh) | 2007-09-13 | 2008-09-11 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007238289A JP2009071059A (ja) | 2007-09-13 | 2007-09-13 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009071059A true JP2009071059A (ja) | 2009-04-02 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007238289A Pending JP2009071059A (ja) | 2007-09-13 | 2007-09-13 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20090072369A1 (ja) |
JP (1) | JP2009071059A (ja) |
CN (1) | CN101388388A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013219268A (ja) * | 2012-04-11 | 2013-10-24 | Sumitomo Electric Ind Ltd | 半導体デバイス |
JP2013251297A (ja) * | 2012-05-30 | 2013-12-12 | Toyota Motor Corp | 半導体装置及びその製造方法 |
JP2015233036A (ja) * | 2014-06-09 | 2015-12-24 | 三菱電機株式会社 | 半導体装置 |
JP2016082213A (ja) * | 2014-10-16 | 2016-05-16 | 現代自動車株式会社Hyundai Motor Company | 電力半導体モジュールおよびその製造方法 |
US9570439B2 (en) | 2015-03-13 | 2017-02-14 | Kabushiki Kaisha Toshiba | Semiconductor device and semiconductor package |
JP2018093024A (ja) * | 2016-12-01 | 2018-06-14 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
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US8643176B2 (en) * | 2011-07-27 | 2014-02-04 | Infineon Technologies Ag | Power semiconductor chip having two metal layers on one face |
US9263435B2 (en) * | 2011-09-30 | 2016-02-16 | Renesas Electronics Corporation | Switching element with a series-connected junction FET (JFET) and MOSFET achieving both improved withstand voltage and reduced on-resistance |
CN215266282U (zh) * | 2021-04-14 | 2021-12-21 | 苏州汇川技术有限公司 | 一种功率半导体器件的封装结构 |
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US20010052641A1 (en) * | 2000-06-15 | 2001-12-20 | Frank Kuo | Power semiconductor device |
JP2004363225A (ja) * | 2003-06-03 | 2004-12-24 | Nissan Motor Co Ltd | 積層型半導体装置 |
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US5963427A (en) * | 1997-12-11 | 1999-10-05 | Sun Microsystems, Inc. | Multi-chip module with flexible circuit board |
JP2003110077A (ja) * | 2001-10-02 | 2003-04-11 | Mitsubishi Electric Corp | 半導体装置 |
JP2005302951A (ja) * | 2004-04-09 | 2005-10-27 | Toshiba Corp | 電力用半導体装置パッケージ |
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- 2007-09-13 JP JP2007238289A patent/JP2009071059A/ja active Pending
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2008
- 2008-08-27 US US12/199,611 patent/US20090072369A1/en not_active Abandoned
- 2008-09-11 CN CNA2008102153896A patent/CN101388388A/zh active Pending
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JP2001057408A (ja) * | 1999-06-09 | 2001-02-27 | Matsushita Electric Ind Co Ltd | パワーモジュールとその製造方法 |
US20010052641A1 (en) * | 2000-06-15 | 2001-12-20 | Frank Kuo | Power semiconductor device |
JP2004363225A (ja) * | 2003-06-03 | 2004-12-24 | Nissan Motor Co Ltd | 積層型半導体装置 |
JP2005340639A (ja) * | 2004-05-28 | 2005-12-08 | Toyota Industries Corp | 半導体装置及び三相インバータ装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013219268A (ja) * | 2012-04-11 | 2013-10-24 | Sumitomo Electric Ind Ltd | 半導体デバイス |
JP2013251297A (ja) * | 2012-05-30 | 2013-12-12 | Toyota Motor Corp | 半導体装置及びその製造方法 |
JP2015233036A (ja) * | 2014-06-09 | 2015-12-24 | 三菱電機株式会社 | 半導体装置 |
JP2016082213A (ja) * | 2014-10-16 | 2016-05-16 | 現代自動車株式会社Hyundai Motor Company | 電力半導体モジュールおよびその製造方法 |
US9570439B2 (en) | 2015-03-13 | 2017-02-14 | Kabushiki Kaisha Toshiba | Semiconductor device and semiconductor package |
US9853023B2 (en) | 2015-03-13 | 2017-12-26 | Kabushiki Kaisha Toshiba | Semiconductor device and semiconductor package |
JP2018093024A (ja) * | 2016-12-01 | 2018-06-14 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
Also Published As
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CN101388388A (zh) | 2009-03-18 |
US20090072369A1 (en) | 2009-03-19 |
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