JPS62152135A - 半導体装置 - Google Patents

半導体装置

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Publication number
JPS62152135A
JPS62152135A JP60296406A JP29640685A JPS62152135A JP S62152135 A JPS62152135 A JP S62152135A JP 60296406 A JP60296406 A JP 60296406A JP 29640685 A JP29640685 A JP 29640685A JP S62152135 A JPS62152135 A JP S62152135A
Authority
JP
Japan
Prior art keywords
wire
gate
bonding
source
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60296406A
Other languages
English (en)
Inventor
Shinobu Takahama
忍 高浜
Noriyoshi Arai
規由 新井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60296406A priority Critical patent/JPS62152135A/ja
Publication of JPS62152135A publication Critical patent/JPS62152135A/ja
Pending legal-status Critical Current

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  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は半導体装置に関し、特にパワーＭＯ３ＦＥＴ
モジュールの構造の改良に関するものである。
〔従来の技術〕
第４図（ａ）、　（ｂｌはそれぞれ従来のパワーＭＯ３
ＦＥＴモジュールの構造を示す平面図および断面図であ
る。図において、１１は放熱ベース基板（銅）１２は絶
縁用セラミックス板、１３はソース端子、１４はドレイ
ン（ＭＯＳＦＥＴ　　２段側）ソース（ＭＯＳＦＥＴ　
　１段側）共通端子、１５はドレイン端子（ＭＯＳＦＥ
Ｔ　　１段側）、１６は銅ベース板、１７はモリフ゛デ
ン１反、ｌはＭＯＳ　Ｆ　ＥＴチップ、１８は抵抗体、
１９はショットキーダイオード、２０はフライホイール
ダイオード、２はＭＯＳＦＥＴとソース重臣とを結ぶア
ルミワイヤ、３はＭＯＳＦＥＴとゲート電極とを結ぶア
ルミワイヤ、２１はソース又はゲート電極であり、これ
らはＳｌ、Ｓ２．ＤＩ、Ｄ２用の４本ある。また２２は
該電極２１と各電極とを結ぶワイヤである。
〔発明が解決しようとする問題点］ 従来のパワーＭＯＳ　Ｆ　ＥＴモジュールは以上の様に
バイポーラパワーモジュールと同じ構成になっているた
め、結線用アルミワイヤは全て同一径である。
この理由としては、パワーモジュールの組立には自動機
械が多く取り入れられており、ワイヤーボンドに関して
も自動化を行う上で、ワイヤー径は全て同一にすべきで
あると言う製造上の問題があった。またバイポーラトラ
ンジスタはベース電流によって制御を行うので、電流容
量の点からベース側のワイヤーは出力側のワイヤーと同
径にする必要があった。さらに超音波ボンディングでは
チップにストレスが加わり、これによりジャンクション
が破壊されることはないが、ＭＯＳＦＥＴのチップはこ
のストレスによりゲートが短絡する可能性が大きい。こ
のためワイヤボンド部にはその下部にセルが搭載されて
いないボンディングバンドを設ける必要がある。従って
ワイヤー径に比例してポンディングパッドも大きくなり
、同一チップ上の有効セル数を減らすというデバイス上
の問題があった。
この発明は上記のような問題点を解消するためになされ
たもので、ワイヤーンディングパ・ンドの面積を減らし
、チップの有９ＪＪ面積を増やすことにより同一チップ
サイズでさらに高出力可能なパワーＭＯＳＦＥＴモジュ
ールを提供することを目的とする。
〔問題点を解決するための手段〕
この発明に係る半導体装置は、ソース・ドレイン側のワ
イヤー径に対し、ゲート側のワイヤー径を小さくし、超
音波あるいは熱圧着ボンディングによりワイヤーボンデ
ィングしたものである。
〔作用〕
この発明においては、ソース・ドレイン側のワイヤー径
に対し、ゲート側のワイヤー径を小さくすることにより
、ポンディングパッドが小さくなり、このためワイヤー
ボンドにより使用不可となる領域が減少し、チップ全体
としての有効セル数が増加する。
〔実施例〕
以下、この発明の一実施例を図について説明する。第１
図は本発明の一実施例によるパワーＭＯＳＦＥＴモジュ
ールにおけるチップ部だけを拡大した図である。図にお
いて１はチップ、２はソース側のワイヤであり、これは
３００μφの金属細線を用いて超音波ボンディングされ
たものである。
３はゲート側のワイヤであり、これは１００μφのＡ７
Ｌ　　Ａｕ等の金属細線を用いて超音波ボンディングさ
れたものである。４はゲートのボンディングバンド、５
はソースのボンディングバンドである。
上記パワーＭＯ３ＦＥＴは、ＭＯ３ＦＥ’Ｔ’が電圧制
御型デバイスであってゲートワイヤには小電流した流れ
ないことから、上記ゲートワイヤ３をソースワイヤ２に
比べ綱くすることにより、デー１−ボンデイングパソド
４の面積を減らしたものである。
次に作用効果について第１図〜第３図を用いて説明する
。
まず第３図に示すＤＳＡ　　ＭＯ３ＦＥＴ構造は二重拡
散よりチャンネルを形成するもので、同一の拡散窓によ
りチャンネル形成用不純物拡散、ソース形成用不純物拡
散を行なってＰ影領域８．ｎ十ソース領域７が形成され
ている。またソース電極５はｎナソース７とチャンネル
形成２層８との両方にオーミック接触しており、ゲート
電極４はストライプ、またはメツシュ構造である。また
基板９がドレイン領域であり、ｎ　／　ｎ＋構造になっ
ている。また、ゲート電極４は酸化膜５ｉｏ２ｉ。
によりウェハ表面と分離されていて、ゲート下部には、
セル（トランジスタ）が存在している。しかしワイヤボ
ンドは、超音波ウェッジボンディングを行う為に、ボン
ディング時にストレスが生じ、ゲートがウェハ表面に押
し下げられ短絡を起こす可能性が大きく、下部にセルを
持たないポンディングパッド（ゲート及びソース）が必
要になる。
このためボンディングバンドが大き（なれば、それだけ
有効に作動するセル数が減ることになる。
本実施例ではＭＯＳＦＥＴが電圧制御形デバイスであっ
て、ゲートには小電流しか流れないことから、ゲート部
のワイヤー径を従来のものより小さくすることで、ポン
ディングパッドの面積減少ができ、有効セル数を増やす
ことができる。
また、第１図は本実施例のＭＯＳ　Ｆ　ＥＴのチップ部
だけを描いたものであり、ソース側のワイヤ２０Ｂ　（
３００ｐｍ）に比べて、ゲート側のワイヤ３の径（１０
０μｍ）と細くしている。これによって第２図に示すよ
うに、従来のＭＯ３ＦＥＴモジュールにおいてゲートワ
イヤ径は３００μｍであったところを１００μｍにする
ことにより、第２図中の斜線部分の面積がセルとして有
効に利用でき、。
この実施例で約１６０セル増加することができる。
これによりパワーＭＯＳ　Ｆ　ＥＴモジュールの性能向
上に大きく貢献することができる。
なお上記実施例においては、ゲートワイヤーとしてアル
ミ線を用いて、これを超音波ボンディングをしたものを
示したが、ボンディング方法として熱圧着・ボンディン
グを採用することにより、ゲートワイヤを更に細くシて
もよい。
〔発明の効果〕
以上のようにこの発明に係る半導体装置によれば、ソー
ス部のワイヤー径よりゲート部のワイヤー径を小さくし
たので、ゲートワイヤポンディングパッドが小さくなり
、チップ上の有効セル数が増えこれにより同一チップサ
イズでさらに高出力のものが１与られる効果がある。
【図面の簡単な説明】
第１図はこの発明の一実施例によるパワーＭＯＳＦＥＴ
モジュールのチップ部のみを示す図、第２図はこの発明
による有効チップ面積の増加を概念的に示した図、第３
図はＤＳＡ　　ＭＯ３ＦＥＴ構造及びボンディングバン
ドを示す断面図、第４図は従来のパワーＭＯＳＦＥＴモ
ジュールの内部配置を示す平面図及び外部電極を立てた
状態での正面図である。 １はＭＯ３ＦＥＴチップ、２はソース側ワイヤ、３はゲ
ート側ワイヤ、４はゲートポンディングパッド、５はソ
ースボンディングパッドである。 なお図中同一符号は同−又は相当部分を示す。

Claims (3)

    【特許請求の範囲】
  1. （１）チップと電極とがワイヤーボンディング接続され
    ているパワーＭＯＳＦＥＴモジュールにおいて、 ゲート側のワイヤーがソース側のワイヤー径より小さい
    ことを特徴とする半導体装置。
  2. （２）上記ゲート側ワイヤは超音波ボンディングまたは
    熱圧着ボンディングによって接着されたものであること
    を特徴とする特許請求の範囲第１項記載の半導体装置。
  3. （３）上記ソース側ワイヤは超音波ボンディングによっ
    て接着されたものであることを特徴とする特許請求の範
    囲第１項記載の半導体装置。
JP60296406A 1985-12-25 1985-12-25 半導体装置 Pending JPS62152135A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60296406A JPS62152135A (ja) 1985-12-25 1985-12-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60296406A JPS62152135A (ja) 1985-12-25 1985-12-25 半導体装置

Publications (1)

Publication Number Publication Date
JPS62152135A true JPS62152135A (ja) 1987-07-07

Family

ID=17833132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60296406A Pending JPS62152135A (ja) 1985-12-25 1985-12-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS62152135A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019215A (ja) * 2005-07-07 2007-01-25 Sanken Electric Co Ltd 半導体装置及びその製法
JP2008252115A (ja) * 2008-05-19 2008-10-16 Sanken Electric Co Ltd 半導体装置及びその製法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821351A (ja) * 1981-07-30 1983-02-08 Toshiba Corp 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821351A (ja) * 1981-07-30 1983-02-08 Toshiba Corp 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019215A (ja) * 2005-07-07 2007-01-25 Sanken Electric Co Ltd 半導体装置及びその製法
US7847316B2 (en) 2005-07-07 2010-12-07 Sanken Electric Co., Ltd. Semiconductor device and its manufacture
JP2008252115A (ja) * 2008-05-19 2008-10-16 Sanken Electric Co Ltd 半導体装置及びその製法

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