JP2007158131A - Ｉｉｉ族窒化物系化合物半導体光素子 - Google Patents

Ｉｉｉ族窒化物系化合物半導体光素子 Download PDF

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Publication number
JP2007158131A
JP2007158131A JP2005352726A JP2005352726A JP2007158131A JP 2007158131 A JP2007158131 A JP 2007158131A JP 2005352726 A JP2005352726 A JP 2005352726A JP 2005352726 A JP2005352726 A JP 2005352726A JP 2007158131 A JP2007158131 A JP 2007158131A
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JP
Japan
Prior art keywords
layer
group iii
compound semiconductor
iii nitride
nitride compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005352726A
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English (en)
Japanese (ja)
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JP2007158131A5 (enExample
Inventor
Toshiya Kamimura
俊也 上村
Masanobu Ando
雅信 安藤
Shigemi Horiuchi
茂美 堀内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2005352726A priority Critical patent/JP2007158131A/ja
Priority to US11/633,621 priority patent/US20070138540A1/en
Publication of JP2007158131A publication Critical patent/JP2007158131A/ja
Publication of JP2007158131A5 publication Critical patent/JP2007158131A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
JP2005352726A 2005-06-12 2005-12-06 Ｉｉｉ族窒化物系化合物半導体光素子 Withdrawn JP2007158131A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005352726A JP2007158131A (ja) 2005-12-06 2005-12-06 Ｉｉｉ族窒化物系化合物半導体光素子
US11/633,621 US20070138540A1 (en) 2005-06-12 2006-12-05 Group III nitride based compound semiconductor optical device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005352726A JP2007158131A (ja) 2005-12-06 2005-12-06 Ｉｉｉ族窒化物系化合物半導体光素子

Publications (2)

Publication Number Publication Date
JP2007158131A true JP2007158131A (ja) 2007-06-21
JP2007158131A5 JP2007158131A5 (enExample) 2009-12-24

Family

ID=38172462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005352726A Withdrawn JP2007158131A (ja) 2005-06-12 2005-12-06 Ｉｉｉ族窒化物系化合物半導体光素子

Country Status (2)

Country Link
US (1) US20070138540A1 (enExample)
JP (1) JP2007158131A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012042909A1 (ja) 2010-09-30 2012-04-05 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP2013175761A (ja) * 2013-04-17 2013-09-05 Toshiba Corp 半導体発光素子及び発光装置
US8766311B2 (en) 2011-02-24 2014-07-01 Kabushiki Kaisha Toshiba Semiconductor light emitting device and light emitting apparatus

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007040295A1 (en) * 2005-10-04 2007-04-12 Seoul Opto Device Co., Ltd. (al, ga, in)n-based compound semiconductor and method of fabricating the same
KR100872717B1 (ko) 2007-06-22 2008-12-05 엘지이노텍 주식회사 발광 소자 및 그 제조방법
WO2012091311A2 (en) * 2010-12-28 2012-07-05 Seoul Opto Device Co., Ltd. High efficiency light emitting diode
JP2023154555A (ja) * 2022-04-07 2023-10-20 株式会社デンソー 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6936859B1 (en) * 1998-05-13 2005-08-30 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
US6222207B1 (en) * 1999-05-24 2001-04-24 Lumileds Lighting, U.S. Llc Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
US6608360B2 (en) * 2000-12-15 2003-08-19 University Of Houston One-chip micro-integrated optoelectronic sensor
JP3912044B2 (ja) * 2001-06-06 2007-05-09 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
US6762069B2 (en) * 2002-11-19 2004-07-13 United Epitaxy Company, Ltd. Method for manufacturing light-emitting element on non-transparent substrate
JP2006066868A (ja) * 2004-03-23 2006-03-09 Toyoda Gosei Co Ltd 固体素子および固体素子デバイス

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012042909A1 (ja) 2010-09-30 2012-04-05 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
US9263642B2 (en) 2010-09-30 2016-02-16 Dowa Electronics Materials Co., Ltd. III nitride semiconductor light emitting device and method for manufacturing the same
US8766311B2 (en) 2011-02-24 2014-07-01 Kabushiki Kaisha Toshiba Semiconductor light emitting device and light emitting apparatus
US9018654B2 (en) 2011-02-24 2015-04-28 Kabushiki Kaisha Toshiba Semiconductor light emitting device and light emitting apparatus
JP2013175761A (ja) * 2013-04-17 2013-09-05 Toshiba Corp 半導体発光素子及び発光装置

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Publication number Publication date
US20070138540A1 (en) 2007-06-21

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