JP4841378B2 - 垂直構造発光ダイオードの製造方法 - Google Patents
垂直構造発光ダイオードの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 53
- 238000007747 plating Methods 0.000 claims description 118
- 239000000758 substrate Substances 0.000 claims description 74
- 238000000034 method Methods 0.000 claims description 49
- 238000002955 isolation Methods 0.000 claims description 47
- 238000005253 cladding Methods 0.000 claims description 34
- 229910052594 sapphire Inorganic materials 0.000 claims description 27
- 239000010980 sapphire Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 238000001039 wet etching Methods 0.000 claims description 13
- 239000007769 metal material Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052745 lead Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 238000007772 electroless plating Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 123
- 238000000926 separation method Methods 0.000 description 12
- 238000003698 laser cutting Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Description
101 成長用基板(サファイア基板)
115a n型クラッド層
115b 活性層
115c p型クラッド層
115 発光構造物
106 p側電極
110 フォトレジストパターン
136、136’ 第1メッキ層
156 第2メッキ層
119 n側電極
120、120’ トレンチ
A 素子領域
B 素子分離領域
Claims (18)
- 複数の素子領域と少なくとも一つの素子分離領域を有する成長用基板上にn型クラッド層、活性層及びp型クラッド層が順次配置された発光構造物を形成する段階と、
前記発光構造物上にp側電極を形成する段階と、
前記複数の素子領域を連結し、前記素子分離領域における前記成長用基板の上面または前記素子分離領域における前記発光構造物の上面と接触し、前記素子分離領域の少なくとも一部を露出させるオープン領域を有するように前記p側電極上に第1メッキ層を形成する段階と、
前記素子領域の前記第1メッキ層上に、前記素子分離領域から分離された第2メッキ層のパターンを前記素子領域に形成する段階と、
前記第2メッキ層のパターンを形成した後に、化学的リフトオフを通じて前記成長用基板を除去し、前記n型クラッド層上にn側電極を形成する段階と、
前記第1メッキ層を形成する段階の前に、または前記成長用基板を除去した後に、前記素子分離領域の前記発光構造物にトレンチを形成して前記発光構造物を個別素子領域に分離する段階と、
前記成長用基板の除去及び前記n型電極形成後に、前記素子分離領域で前記第1メッキ層を蝕刻するか、または切断することで、チップを分離する段階とを含むことを特徴とする垂直構造発光ダイオードの製造方法。 - 前記トレンチ形成後、個別素子領域に分離された前記発光構造物の側面にパッシベーション膜を形成する段階をさらに含むことを特徴とする請求項1に記載の垂直構造発光ダイオードの製造方法。
- 前記チップを分離する段階は、前記n側電極を形成した後、前記素子分離領域において湿式蝕刻により前記第1メッキ層を除去する段階を含むことを特徴とする請求項1または請求項2に記載の垂直構造発光ダイオードの製造方法。
- 前記第1メッキ層は前記第2メッキ層とは異なる金属材料で形成され、
前記第1メッキ層の湿式蝕刻時第1メッキ層は第2メッキ層に比べ高い蝕刻選択比を有することを特徴とする請求項3に記載の垂直構造発光ダイオードの製造方法。 - 前記チップを分離する段階は、前記n側電極を形成した後、前記素子分離領域において前記第1メッキ層をブレイキングする段階を含むことを特徴とする請求項1または請求項2に記載の垂直構造発光ダイオードの製造方法。
- 前記チップを分離する段階は、前記n側電極を形成した後、前記素子分離領域において前記第1メッキ層にレーザー光を照射して前記素子分離領域から前記第1メッキ層を切断する段階を含むことを特徴とする請求項1または請求項2に記載の垂直構造発光ダイオードの製造方法。
- 前記第1メッキ層は、Au、Cu、Ni、Ag、Cr、W、Al、Pt、Sn、Pb、Fe、Ti、Mo及びこれらのうち2以上の合金から成るグループから一つ以上選択された金属材料を含むことを特徴とする請求項1、請求項2乃至請求項6の何れか1項に記載の垂直構造発光ダイオードの製造方法。
- 前記第2メッキ層は、Au、Cu、Ni、Ag、Cr、W、Al、Pt、Sn、Pb、Fe、Ti、Mo及びこれらのうち2以上の合金から成るグループから一つ以上選択された金属材料を含むことを特徴とする請求項1、請求項2乃至請求項7の何れか1項に記載の垂直構造発光ダイオードの製造方法。
- 前記第1メッキ層を形成する段階において、前記第1メッキ層は前記p側電極の上面を含む全面上に塗布されるよう形成されることを特徴とする請求項1、請求項2乃至請求項8の何れか1項に記載の垂直構造発光ダイオードの製造方法。
- 前記第1メッキ層を形成する段階において、前記第1メッキ層は前記素子分離領域の一部をオープンさせるよう形成されることを特徴とする請求項1、請求項2乃至請求項8の何れか1項に記載の垂直構造発光ダイオードの製造方法。
- 前記第1メッキ層を形成する段階は、
前記複数の素子領域を連結するよう前記p側電極上にメッキシード層を形成する段階と、
前記メッキシード層上に電気メッキを実施する段階と、を含むことを特徴とする請求項1、請求項2乃至請求項10の何れか1項に記載の垂直構造発光ダイオードの製造方法。 - 前記メッキシード層は、無電解メッキまたは蒸着により形成されることを特徴とする請求項11に記載の垂直構造発光ダイオードの製造方法。
- 前記第2メッキ層のパターンを形成する段階は、
前記素子領域の第1メッキ層をオープンさせるフォトレジストパターンを形成する段階と、
前記フォトレジストパターンを利用して、前記素子領域でのみ前記第1メッキ層上に選択的に電気メッキを実施する段階と、を含むことを特徴とする請求項1、請求項2乃至請求項12の何れか1項に記載の垂直構造発光ダイオードの製造方法。 - 前記n型クラッド層、活性層及びp型クラッド層は、III−V族化合物半導体材料で形成されることを特徴とする請求項1、請求項2乃至請求項13の何れか1項に記載の垂直構造発光ダイオードの製造方法。
- 前記n型クラッド層、活性層及びp型クラッド層は、AlxGayln(1−x−y)N(0≦x≦1,0≦y≦1,0≦x+y≦1)半導体材料で形成されることを特徴とする請求項1、請求項2乃至請求項14の何れか1項に記載の垂直構造発光ダイオードの製造方法。
- 前記成長用基板としてはサファイア基板を使用することを特徴とする請求項15に記載の垂直構造発光ダイオードの製造方法。
- 前記n型クラッド層、活性層及びp型クラッド層は、AlxGayln(1−x−y)P(0≦x≦1,0≦y≦1,0≦x+y≦1)半導体材料で形成されることを特徴とする請求項1、請求項2乃至請求項14の何れか1項に記載の垂直構造発光ダイオードの製造方法。
- 前記n型クラッド層、活性層及びp型クラッド層は、AlxGa1−xAs(0≦x≦1)半導体多材料で形成されることを特徴とする請求項1、請求項2乃至請求項13の何れか1項に記載の垂直構造発光ダイオードの製造方法。
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KR1020050093409A KR100714589B1 (ko) | 2005-10-05 | 2005-10-05 | 수직구조 발광 다이오드의 제조 방법 |
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CN (1) | CN100416877C (ja) |
DE (1) | DE102006046449B4 (ja) |
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JP3229229B2 (ja) * | 1996-12-24 | 2001-11-19 | 東芝電子エンジニアリング株式会社 | 半導体チップとその製造方法 |
US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
US6057571A (en) * | 1998-03-31 | 2000-05-02 | Lsi Logic Corporation | High aspect ratio, metal-to-metal, linear capacitor for an integrated circuit |
DE10014667C1 (de) * | 2000-03-24 | 2001-10-18 | Envitec Wismar Gmbh | Verfahren zur Herstellung von Gasdiffusionsmembranen durch partielle Laserverdampfung |
DE10051465A1 (de) * | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
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DE10245631B4 (de) * | 2002-09-30 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement |
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JP4295669B2 (ja) | 2003-05-22 | 2009-07-15 | パナソニック株式会社 | 半導体素子の製造方法 |
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FR2857893B1 (fr) | 2003-07-24 | 2006-09-22 | Roulements Soc Nouvelle | Procede de realisation d'une collerette de retention a transition progressive |
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KR20070013273A (ko) * | 2004-03-15 | 2007-01-30 | 팅기 테크놀러지스 프라이빗 리미티드 | 반도체 장치의 제조 |
JP2005268642A (ja) * | 2004-03-19 | 2005-09-29 | Uni Light Technology Inc | 金属ベースを有する発光ダイオードの形成方法 |
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US7473571B2 (en) | 2009-01-06 |
DE102006046449A1 (de) | 2007-05-24 |
KR100714589B1 (ko) | 2007-05-07 |
JP2007103934A (ja) | 2007-04-19 |
CN1945866A (zh) | 2007-04-11 |
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