CN1945866A - 用于制造垂直结构的发光二极管的方法 - Google Patents
用于制造垂直结构的发光二极管的方法 Download PDFInfo
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- CN1945866A CN1945866A CNA2006101400238A CN200610140023A CN1945866A CN 1945866 A CN1945866 A CN 1945866A CN A2006101400238 A CNA2006101400238 A CN A2006101400238A CN 200610140023 A CN200610140023 A CN 200610140023A CN 1945866 A CN1945866 A CN 1945866A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 8
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- 238000002955 isolation Methods 0.000 claims abstract description 38
- 239000011248 coating agent Substances 0.000 claims description 118
- 238000000576 coating method Methods 0.000 claims description 118
- 229910052594 sapphire Inorganic materials 0.000 claims description 29
- 239000010980 sapphire Substances 0.000 claims description 29
- 238000013517 stratification Methods 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000005516 engineering process Methods 0.000 claims description 19
- 239000007769 metal material Substances 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 11
- 238000001039 wet etching Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052745 lead Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000007772 electroless plating Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 abstract description 8
- 238000007747 plating Methods 0.000 abstract description 5
- 238000005520 cutting process Methods 0.000 description 11
- 239000010931 gold Substances 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000003698 laser cutting Methods 0.000 description 5
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- 230000000694 effects Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009331 sowing Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (25)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050093409A KR100714589B1 (ko) | 2005-10-05 | 2005-10-05 | 수직구조 발광 다이오드의 제조 방법 |
KR1020050093409 | 2005-10-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1945866A true CN1945866A (zh) | 2007-04-11 |
CN100416877C CN100416877C (zh) | 2008-09-03 |
Family
ID=37960197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101400238A Active CN100416877C (zh) | 2005-10-05 | 2006-10-08 | 用于制造垂直结构的发光二极管的方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7473571B2 (zh) |
JP (1) | JP4841378B2 (zh) |
KR (1) | KR100714589B1 (zh) |
CN (1) | CN100416877C (zh) |
DE (1) | DE102006046449B4 (zh) |
TW (1) | TWI315107B (zh) |
Cited By (9)
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CN102214758A (zh) * | 2010-04-09 | 2011-10-12 | Lg伊诺特有限公司 | 发光器件、用于制造发光器件的方法以及发光器件封装 |
CN102447033A (zh) * | 2011-12-29 | 2012-05-09 | 四川鋈新能源科技有限公司 | 一种高光效、低光衰以及高封装良率led芯片 |
CN103140948A (zh) * | 2010-09-15 | 2013-06-05 | 欧司朗光电半导体有限公司 | 电镀覆层的光电子半导体组件和用于制造光电子半导体组件的方法 |
CN103794686A (zh) * | 2012-10-26 | 2014-05-14 | 三星电子株式会社 | 半导体发光器件及其制造方法 |
CN104124220A (zh) * | 2013-04-24 | 2014-10-29 | 三菱电机株式会社 | 半导体元件、半导体元件的制造方法 |
CN104704632A (zh) * | 2012-10-10 | 2015-06-10 | 欧司朗光电半导体有限公司 | 具有集成的保护二极管的光电子器件和用于其制造的方法 |
CN105355731A (zh) * | 2015-12-11 | 2016-02-24 | 佛山市国星半导体技术有限公司 | Led芯片及其制作方法 |
CN105470354A (zh) * | 2015-12-11 | 2016-04-06 | 佛山市国星半导体技术有限公司 | Led芯片及其制作方法 |
CN112993112A (zh) * | 2021-02-02 | 2021-06-18 | 华灿光电(苏州)有限公司 | 发光二极管芯片制备方法 |
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US7829440B2 (en) * | 2006-08-07 | 2010-11-09 | Semileds Optoelectronics Co. Ltd. | Method of separating semiconductor dies |
KR100870719B1 (ko) * | 2007-06-22 | 2008-11-27 | (주)웨이브스퀘어 | 수직구조를 갖는 질화갈륨계 led소자의 제조방법 |
DE102007043877A1 (de) * | 2007-06-29 | 2009-01-08 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Bauelementen und optoelektronisches Bauelement |
WO2009004980A1 (ja) * | 2007-06-29 | 2009-01-08 | Showa Denko K.K. | 発光ダイオードの製造方法 |
TWI411124B (zh) * | 2007-07-10 | 2013-10-01 | Delta Electronics Inc | 發光二極體裝置及其製造方法 |
JP5074138B2 (ja) * | 2007-09-27 | 2012-11-14 | 昭和電工株式会社 | 発光ダイオードの製造方法 |
KR20090032207A (ko) * | 2007-09-27 | 2009-04-01 | 삼성전기주식회사 | 질화갈륨계 발광다이오드 소자 |
KR101428066B1 (ko) * | 2008-04-02 | 2014-08-07 | 엘지이노텍 주식회사 | 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및이의 제조 방법 |
WO2009145483A2 (ko) * | 2008-04-02 | 2009-12-03 | Song June O | 발광 소자 및 그 제조방법 |
JP5237763B2 (ja) * | 2008-11-10 | 2013-07-17 | スタンレー電気株式会社 | 半導体素子の製造方法 |
JP5237764B2 (ja) * | 2008-11-10 | 2013-07-17 | スタンレー電気株式会社 | 半導体素子の製造方法 |
JP5237765B2 (ja) * | 2008-11-10 | 2013-07-17 | スタンレー電気株式会社 | 半導体素子の製造方法 |
KR101014045B1 (ko) | 2009-02-18 | 2011-02-10 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
US8587017B2 (en) | 2009-07-05 | 2013-11-19 | Industrial Technology Research Institute | Light emitting device and method of fabricating a light emitting device |
WO2011069242A1 (en) * | 2009-12-09 | 2011-06-16 | Cooledge Lighting Inc. | Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus |
US20110151588A1 (en) * | 2009-12-17 | 2011-06-23 | Cooledge Lighting, Inc. | Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques |
US8334152B2 (en) | 2009-12-18 | 2012-12-18 | Cooledge Lighting, Inc. | Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate |
US8674383B2 (en) * | 2010-01-21 | 2014-03-18 | Siphoton Inc. | Solid state lighting device on a conductive substrate |
US8722441B2 (en) * | 2010-01-21 | 2014-05-13 | Siphoton Inc. | Manufacturing process for solid state lighting device on a conductive substrate |
KR101482050B1 (ko) * | 2010-02-04 | 2015-01-13 | 에피스타 코포레이션 | 발광다이오드 어레이 |
CN102792469A (zh) * | 2010-03-09 | 2012-11-21 | 申王均 | 透明发光二极管晶片组件及其制造方法 |
KR100996446B1 (ko) | 2010-05-24 | 2010-11-25 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지 |
JP5531794B2 (ja) | 2010-06-09 | 2014-06-25 | 日亜化学工業株式会社 | 半導体発光素子の製造方法 |
US8912033B2 (en) * | 2010-10-08 | 2014-12-16 | Tsmc Solid State Lighting Ltd. | Dicing-free LED fabrication |
CN103367552B (zh) * | 2012-03-27 | 2016-03-30 | 比亚迪股份有限公司 | 一种半导体发光器件的制作方法 |
TWI528578B (zh) * | 2012-03-28 | 2016-04-01 | 鴻海精密工業股份有限公司 | 發光二極體製造方法 |
JP6017834B2 (ja) * | 2012-05-16 | 2016-11-02 | Dowaエレクトロニクス株式会社 | 半導体素子の製造方法ならびに半導体素子集合体および半導体素子 |
WO2013171632A1 (en) * | 2012-05-17 | 2013-11-21 | Koninklijke Philips N.V. | Method of separating a wafer of semiconductor devices |
TWI590302B (zh) * | 2012-10-09 | 2017-07-01 | 晶元光電股份有限公司 | 半導體發光元件及其製作方法 |
CN103811593B (zh) | 2012-11-12 | 2018-06-19 | 晶元光电股份有限公司 | 半导体光电元件的制作方法 |
JP2015195244A (ja) * | 2014-03-31 | 2015-11-05 | ソニー株式会社 | 半導体ユニット、半導体素子、発光装置、表示装置、半導体素子の製造方法 |
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JPH1012917A (ja) | 1996-06-25 | 1998-01-16 | Hitachi Cable Ltd | 発光ダイオード及びその製造方法 |
JP3229229B2 (ja) * | 1996-12-24 | 2001-11-19 | 東芝電子エンジニアリング株式会社 | 半導体チップとその製造方法 |
US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
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DE10014667C1 (de) * | 2000-03-24 | 2001-10-18 | Envitec Wismar Gmbh | Verfahren zur Herstellung von Gasdiffusionsmembranen durch partielle Laserverdampfung |
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JP3896044B2 (ja) * | 2002-07-11 | 2007-03-22 | シャープ株式会社 | 窒化物系半導体発光素子の製造方法およびその製品 |
AU2003252359A1 (en) * | 2002-08-01 | 2004-02-23 | Nichia Corporation | Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same |
DE10245631B4 (de) * | 2002-09-30 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement |
KR100495215B1 (ko) * | 2002-12-27 | 2005-06-14 | 삼성전기주식회사 | 수직구조 갈륨나이트라이드 발광다이오드 및 그 제조방법 |
JP4295669B2 (ja) | 2003-05-22 | 2009-07-15 | パナソニック株式会社 | 半導体素子の製造方法 |
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FR2857893B1 (fr) | 2003-07-24 | 2006-09-22 | Roulements Soc Nouvelle | Procede de realisation d'une collerette de retention a transition progressive |
JP4766845B2 (ja) * | 2003-07-25 | 2011-09-07 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
WO2005088743A1 (en) * | 2004-03-15 | 2005-09-22 | Tinggi Technologies Private Limited | Fabrication of semiconductor devices |
JP2005268642A (ja) * | 2004-03-19 | 2005-09-29 | Uni Light Technology Inc | 金属ベースを有する発光ダイオードの形成方法 |
-
2005
- 2005-10-05 KR KR1020050093409A patent/KR100714589B1/ko active IP Right Grant
-
2006
- 2006-09-28 TW TW095135936A patent/TWI315107B/zh active
- 2006-09-29 DE DE102006046449A patent/DE102006046449B4/de active Active
- 2006-09-29 JP JP2006266449A patent/JP4841378B2/ja active Active
- 2006-10-03 US US11/541,674 patent/US7473571B2/en active Active
- 2006-10-08 CN CNB2006101400238A patent/CN100416877C/zh active Active
Cited By (17)
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US9041028B2 (en) | 2010-04-09 | 2015-05-26 | Lg Innotek Co., Ltd. | Light emitting device, method for fabricating the light emitting device, and light emitting device package |
CN102214758A (zh) * | 2010-04-09 | 2011-10-12 | Lg伊诺特有限公司 | 发光器件、用于制造发光器件的方法以及发光器件封装 |
CN103140948A (zh) * | 2010-09-15 | 2013-06-05 | 欧司朗光电半导体有限公司 | 电镀覆层的光电子半导体组件和用于制造光电子半导体组件的方法 |
US9041020B2 (en) | 2010-09-15 | 2015-05-26 | Osram Opto Semiconductors Gmbh | Electrolytically coated optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component |
CN102447033A (zh) * | 2011-12-29 | 2012-05-09 | 四川鋈新能源科技有限公司 | 一种高光效、低光衰以及高封装良率led芯片 |
CN102447033B (zh) * | 2011-12-29 | 2014-10-15 | 四川鋈新能源科技有限公司 | 一种高光效、低光衰以及高封装良率led芯片 |
CN104704632A (zh) * | 2012-10-10 | 2015-06-10 | 欧司朗光电半导体有限公司 | 具有集成的保护二极管的光电子器件和用于其制造的方法 |
CN104704632B (zh) * | 2012-10-10 | 2017-11-24 | 欧司朗光电半导体有限公司 | 具有集成的保护二极管的光电子器件和用于其制造的方法 |
CN103794686A (zh) * | 2012-10-26 | 2014-05-14 | 三星电子株式会社 | 半导体发光器件及其制造方法 |
CN103794686B (zh) * | 2012-10-26 | 2018-08-24 | 三星电子株式会社 | 半导体发光器件及其制造方法 |
CN104124220A (zh) * | 2013-04-24 | 2014-10-29 | 三菱电机株式会社 | 半导体元件、半导体元件的制造方法 |
CN104124220B (zh) * | 2013-04-24 | 2017-04-12 | 三菱电机株式会社 | 半导体元件、半导体元件的制造方法 |
CN105355731A (zh) * | 2015-12-11 | 2016-02-24 | 佛山市国星半导体技术有限公司 | Led芯片及其制作方法 |
CN105470354A (zh) * | 2015-12-11 | 2016-04-06 | 佛山市国星半导体技术有限公司 | Led芯片及其制作方法 |
CN105355731B (zh) * | 2015-12-11 | 2019-01-08 | 佛山市国星半导体技术有限公司 | Led芯片及其制作方法 |
CN105470354B (zh) * | 2015-12-11 | 2019-01-08 | 佛山市国星半导体技术有限公司 | Led芯片及其制作方法 |
CN112993112A (zh) * | 2021-02-02 | 2021-06-18 | 华灿光电(苏州)有限公司 | 发光二极管芯片制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4841378B2 (ja) | 2011-12-21 |
US7473571B2 (en) | 2009-01-06 |
DE102006046449A1 (de) | 2007-05-24 |
JP2007103934A (ja) | 2007-04-19 |
KR20070038272A (ko) | 2007-04-10 |
DE102006046449B4 (de) | 2010-11-11 |
TWI315107B (en) | 2009-09-21 |
KR100714589B1 (ko) | 2007-05-07 |
US20070077673A1 (en) | 2007-04-05 |
TW200717884A (en) | 2007-05-01 |
CN100416877C (zh) | 2008-09-03 |
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