JP4758857B2 - 垂直構造発光ダイオードの製造方法 - Google Patents
垂直構造発光ダイオードの製造方法 Download PDFInfo
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- JP4758857B2 JP4758857B2 JP2006255348A JP2006255348A JP4758857B2 JP 4758857 B2 JP4758857 B2 JP 4758857B2 JP 2006255348 A JP2006255348 A JP 2006255348A JP 2006255348 A JP2006255348 A JP 2006255348A JP 4758857 B2 JP4758857 B2 JP 4758857B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 claims description 97
- 238000000034 method Methods 0.000 claims description 40
- 238000005253 cladding Methods 0.000 claims description 34
- 239000011521 glass Substances 0.000 claims description 32
- 238000007747 plating Methods 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910052594 sapphire Inorganic materials 0.000 claims description 19
- 239000010980 sapphire Substances 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000007772 electroless plating Methods 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 238000010297 mechanical methods and process Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 53
- 238000000926 separation method Methods 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
115a n型クラッド層
115b 活性層
115c p型クラッド層
115 発光構造物
106 p側電極
110 ガラス基板
116 メッキ層
119 n側電極
130 貫通孔
A 素子領域
B 素子分離領域
Claims (13)
- 複数の素子領域と少なくとも一つの素子分離領域を有する成長用基板上にn型クラッド層、活性層及びp型クラッド層が順次配置された発光構造物を形成する段階と、
前記発光構造物上にp側電極を形成する段階と、
前記p側電極上に貫通孔が加工されたガラス基板を形成して、前記貫通孔が前記素子領域の前記p側電極上に位置するようにする段階と、
前記貫通孔に金属物質をメッキして前記素子領域の前記p側電極上に互いに分離されたメッキ層のパターンを形成する段階と、
前記メッキ層のパターンを形成した後に、前記成長用基板を除去し前記n型クラッド層上にn側電極を形成する段階と、
前記成長用基板の除去及び前記n側電極の形成後に、前記ガラス基板を蝕刻して除去することで、個別素子にチップ分離する段階とを含み、
前記発光構造物を形成する段階と前記p側電極を形成する段階との間に、または前記p型電極を形成する段階と前記p側電極上にガラス基板を形成する段階との間に、前記素子分離領域の前記発光構造物にトレンチを形成して前記発光構造物を個別素子領域に分離する段階をさらに含むことを特徴とする垂直構造発光ダイオードの製造方法。 - 前記p側電極上に前記ガラス基板を形成する段階は、貫通孔が加工されたガラス基板を前記p側電極上に接合する段階を含むことを特徴とする請求項1に記載の垂直構造発光ダイオードの製造方法。
- 前記p側電極上に前記ガラス基板を形成する段階は、
ガラス基板を前記p側電極上に接合する段階と、
前記ガラス基板に貫通孔を形成して、前記貫通孔が前記素子領域の前記p側領域上に位置するようにする段階と、
を含むことを特徴とする請求項1に記載の垂直構造発光ダイオードの製造方法。 - 前記メッキ層は、Au、Cu、Ni、Ag、Cr、W、Al、Pt、Sn、Pb、Fe、Ti、Mo及びこれらのうち2以上の合金から成るグループから一つ以上選択された金属材料を含むことを特徴とする請求項1に記載の垂直構造発光ダイオードの製造方法。
- 前記メッキ層のパターンを形成する前に、前記素子領域の前記p側電極の上面にメッキシード層を形成する段階をさらに含むことを特徴とする請求項1に記載の垂直構造発光ダイオードの製造方法。
- 前記メッキシード層は、無電解メッキまたは蒸着によって形成されることを特徴とする請求項5に記載の垂直構造発光ダイオードの製造方法。
- 前記成長用基板を除去する段階は、物理的、化学的または機械的な方法によって遂行されることを特徴とする請求項1に記載の垂直構造発光ダイオードの製造方法。
- 前記成長用基板は、レーザリフトオフによって除去されることを特徴とする請求項7に記載の垂直構造発光ダイオードの製造方法。
- 前記n型クラッド層、活性層及びp型クラッド層は、III−V族化合物半導体材料で形成されることを特徴とする請求項1に記載の垂直構造発光ダイオードの製造方法。
- 前記n型クラッド層、活性層及びp型クラッド層は、AlxGayln(1−x−y)N(0≦x≦1、0≦y≦1、0≦x+y≦1)半導体材料で形成されることを特徴とする請求項1に記載の垂直構造発光ダイオードの製造方法。
- 前記成長用基板としてはサファイア基板を使用することを特徴とする請求項10に記載の垂直構造発光ダイオードの製造方法。
- 前記n型クラッド層、活性層及びp型クラッド層は、AlxGayln(1−x−y)P(0≦x≦1、0≦y≦1、0≦x+y≦1)半導体材料で形成されることを特徴とする請求項1に記載の垂直構造発光ダイオードの製造方法。
- 前記n型クラッド層、活性層及びp型クラッド層は、AlxGa1−xAs(0≦x≦1)半導体材料で形成されることを特徴とする請求項1に記載の垂直構造発光ダイオードの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050088894A KR100691363B1 (ko) | 2005-09-23 | 2005-09-23 | 수직구조 발광 다이오드의 제조 방법 |
KR10-2005-0088894 | 2005-09-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007088480A JP2007088480A (ja) | 2007-04-05 |
JP4758857B2 true JP4758857B2 (ja) | 2011-08-31 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006255348A Expired - Fee Related JP4758857B2 (ja) | 2005-09-23 | 2006-09-21 | 垂直構造発光ダイオードの製造方法 |
Country Status (5)
Country | Link |
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US (1) | US7442565B2 (ja) |
JP (1) | JP4758857B2 (ja) |
KR (1) | KR100691363B1 (ja) |
DE (1) | DE102006043843B4 (ja) |
TW (1) | TWI311380B (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8237151B2 (en) * | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
JP2009049371A (ja) * | 2007-07-26 | 2009-03-05 | Sharp Corp | 窒化物系化合物半導体発光素子およびその製造方法 |
JP2009105123A (ja) * | 2007-10-22 | 2009-05-14 | Showa Denko Kk | 発光ダイオードおよびその製造方法 |
JP5232975B2 (ja) * | 2008-07-01 | 2013-07-10 | 豊田合成株式会社 | 発光ダイオードの製造方法及び発光ダイオード、並びにランプ |
KR101031350B1 (ko) | 2008-09-30 | 2011-04-29 | 서울옵토디바이스주식회사 | 발광 다이오드 제조 방법 |
JP4799606B2 (ja) * | 2008-12-08 | 2011-10-26 | 株式会社東芝 | 光半導体装置及び光半導体装置の製造方法 |
WO2011069242A1 (en) * | 2009-12-09 | 2011-06-16 | Cooledge Lighting Inc. | Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus |
US20110151588A1 (en) * | 2009-12-17 | 2011-06-23 | Cooledge Lighting, Inc. | Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques |
WO2011073886A1 (en) * | 2009-12-18 | 2011-06-23 | Koninklijke Philips Electronics N.V. | Substrate for a semiconductor light emitting device |
US8334152B2 (en) * | 2009-12-18 | 2012-12-18 | Cooledge Lighting, Inc. | Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate |
KR101051326B1 (ko) * | 2010-04-23 | 2011-07-22 | 주식회사 세미콘라이트 | 화합물 반도체 발광소자 |
TWI458129B (zh) | 2010-12-21 | 2014-10-21 | Lextar Electronics Corp | 發光二極體晶片結構及其製造方法 |
TWI460891B (zh) * | 2012-08-17 | 2014-11-11 | Nat Univ Chung Hsing | Preparation method and product of vertical conduction type light emitting diode |
DE102013111496A1 (de) | 2013-10-18 | 2015-04-23 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement |
DE102015111910A1 (de) * | 2015-07-22 | 2017-01-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, Verbund von optoelektronischen Bauelementen und Verfahren zur Herstellung eines optoelektronischen Bauelements |
US10170455B2 (en) * | 2015-09-04 | 2019-01-01 | PlayNitride Inc. | Light emitting device with buffer pads |
TWI572058B (zh) * | 2015-09-04 | 2017-02-21 | 錼創科技股份有限公司 | 發光元件的製作方法 |
DE102016100320A1 (de) * | 2016-01-11 | 2017-07-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, optoelektronisches Modul und Verfahren zur Herstellung eines optoelektronischen Bauelements |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61195987A (ja) * | 1985-02-25 | 1986-08-30 | Hitachi Cable Ltd | 部分めつき用マスク |
JPH01281757A (ja) * | 1988-05-06 | 1989-11-13 | Shimadzu Corp | ハンダバンプ製造方法 |
JPH1012917A (ja) * | 1996-06-25 | 1998-01-16 | Hitachi Cable Ltd | 発光ダイオード及びその製造方法 |
JPH10177974A (ja) * | 1996-12-18 | 1998-06-30 | Nippon Steel Corp | ヘテロエピタキシャルウェハ上のデバイスチップ製造方法 |
US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
JP2003532298A (ja) * | 2000-04-26 | 2003-10-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光半導体素子 |
DE10051465A1 (de) | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
JP4166013B2 (ja) * | 2001-12-26 | 2008-10-15 | 富士通株式会社 | 薄膜キャパシタ製造方法 |
US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
JP4443865B2 (ja) * | 2002-06-24 | 2010-03-31 | 富士フイルム株式会社 | 固体撮像装置およびその製造方法 |
JP3896044B2 (ja) * | 2002-07-11 | 2007-03-22 | シャープ株式会社 | 窒化物系半導体発光素子の製造方法およびその製品 |
DE10245631B4 (de) * | 2002-09-30 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement |
TW569474B (en) | 2002-10-25 | 2004-01-01 | Nat Univ Chung Hsing | Superluminent light emitting diode with plated substrate having reflecting mirror and the manufacturing method thereof |
KR100495215B1 (ko) | 2002-12-27 | 2005-06-14 | 삼성전기주식회사 | 수직구조 갈륨나이트라이드 발광다이오드 및 그 제조방법 |
JP4295669B2 (ja) * | 2003-05-22 | 2009-07-15 | パナソニック株式会社 | 半導体素子の製造方法 |
JP4766845B2 (ja) | 2003-07-25 | 2011-09-07 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
JP2005136302A (ja) * | 2003-10-31 | 2005-05-26 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
KR20050082040A (ko) * | 2004-02-17 | 2005-08-22 | 어드밴스드 에피텍시 테크날리지 | 발광다이오드 제조방법 |
US6884646B1 (en) * | 2004-03-10 | 2005-04-26 | Uni Light Technology Inc. | Method for forming an LED device with a metallic substrate |
WO2005088743A1 (en) * | 2004-03-15 | 2005-09-22 | Tinggi Technologies Private Limited | Fabrication of semiconductor devices |
-
2005
- 2005-09-23 KR KR1020050088894A patent/KR100691363B1/ko not_active IP Right Cessation
-
2006
- 2006-09-18 US US11/522,407 patent/US7442565B2/en not_active Expired - Fee Related
- 2006-09-19 DE DE102006043843A patent/DE102006043843B4/de not_active Expired - Fee Related
- 2006-09-19 TW TW095134530A patent/TWI311380B/zh not_active IP Right Cessation
- 2006-09-21 JP JP2006255348A patent/JP4758857B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2007088480A (ja) | 2007-04-05 |
TWI311380B (en) | 2009-06-21 |
KR100691363B1 (ko) | 2007-03-12 |
US20070099317A1 (en) | 2007-05-03 |
DE102006043843B4 (de) | 2013-11-07 |
US7442565B2 (en) | 2008-10-28 |
DE102006043843A1 (de) | 2007-04-19 |
TW200717875A (en) | 2007-05-01 |
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