JP2000299337A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000299337A5 JP2000299337A5 JP1999105586A JP10558699A JP2000299337A5 JP 2000299337 A5 JP2000299337 A5 JP 2000299337A5 JP 1999105586 A JP1999105586 A JP 1999105586A JP 10558699 A JP10558699 A JP 10558699A JP 2000299337 A5 JP2000299337 A5 JP 2000299337A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive metal
- metal layer
- semiconductor device
- electrode
- forming step
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 description 64
- 239000002184 metal Substances 0.000 description 64
- 239000004065 semiconductor Substances 0.000 description 17
- 238000000576 coating method Methods 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11105586A JP2000299337A (ja) | 1999-04-13 | 1999-04-13 | 半導体装置及びその製造方法 |
| US09/515,515 US6614113B2 (en) | 1999-04-13 | 2000-02-29 | Semiconductor device and method for producing the same |
| TW089103776A TW533519B (en) | 1999-04-13 | 2000-03-03 | Semiconductor device and method for producing the same |
| KR10-2000-0011551A KR100536036B1 (ko) | 1999-04-13 | 2000-03-08 | 반도체 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11105586A JP2000299337A (ja) | 1999-04-13 | 1999-04-13 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000299337A JP2000299337A (ja) | 2000-10-24 |
| JP2000299337A5 true JP2000299337A5 (enExample) | 2006-06-01 |
Family
ID=14411614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11105586A Pending JP2000299337A (ja) | 1999-04-13 | 1999-04-13 | 半導体装置及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6614113B2 (enExample) |
| JP (1) | JP2000299337A (enExample) |
| KR (1) | KR100536036B1 (enExample) |
| TW (1) | TW533519B (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3387083B2 (ja) | 1999-08-27 | 2003-03-17 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JP2003045875A (ja) * | 2001-07-30 | 2003-02-14 | Nec Kagobutsu Device Kk | 半導体装置およびその製造方法 |
| US6768210B2 (en) * | 2001-11-01 | 2004-07-27 | Texas Instruments Incorporated | Bumpless wafer scale device and board assembly |
| JP2003140347A (ja) * | 2001-11-02 | 2003-05-14 | Tokyo Ohka Kogyo Co Ltd | 厚膜ホトレジスト層積層体、厚膜レジストパターンの製造方法、および接続端子の製造方法 |
| DE10156054C2 (de) * | 2001-11-15 | 2003-11-13 | Infineon Technologies Ag | Herstellungsverfahren für eine Leiterbahn auf einem Substrat |
| JP2003188313A (ja) * | 2001-12-20 | 2003-07-04 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US6762503B2 (en) * | 2002-08-29 | 2004-07-13 | Micron Technology, Inc. | Innovative solder ball pad structure to ease design rule, methods of fabricating same and substrates, electronic device assemblies and systems employing same |
| US6995475B2 (en) * | 2003-09-18 | 2006-02-07 | International Business Machines Corporation | I/C chip suitable for wire bonding |
| US20050167837A1 (en) * | 2004-01-21 | 2005-08-04 | International Business Machines Corporation | Device with area array pads for test probing |
| US7910471B2 (en) * | 2004-02-02 | 2011-03-22 | Texas Instruments Incorporated | Bumpless wafer scale device and board assembly |
| JP3981089B2 (ja) * | 2004-02-18 | 2007-09-26 | 株式会社東芝 | 半導体装置とその製造方法 |
| TWI278946B (en) * | 2004-07-23 | 2007-04-11 | Advanced Semiconductor Eng | Structure and formation method for conductive bump |
| US20060087039A1 (en) * | 2004-10-22 | 2006-04-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ubm structure for improving reliability and performance |
| US7416980B2 (en) * | 2005-03-11 | 2008-08-26 | Intel Corporation | Forming a barrier layer in interconnect joints and structures formed thereby |
| KR100762354B1 (ko) * | 2006-09-11 | 2007-10-12 | 주식회사 네패스 | 플립칩 반도체 패키지 및 그 제조방법 |
| JP5101169B2 (ja) | 2007-05-30 | 2012-12-19 | 新光電気工業株式会社 | 配線基板とその製造方法 |
| KR101120285B1 (ko) * | 2007-07-30 | 2012-03-07 | 엔엑스피 비 브이 | 스트레스 완충 반도체 부품 및 그의 제조 방법 |
| US8349721B2 (en) * | 2008-03-19 | 2013-01-08 | Stats Chippac, Ltd. | Semiconductor device and method of forming insulating layer on conductive traces for electrical isolation in fine pitch bonding |
| JP5350022B2 (ja) * | 2009-03-04 | 2013-11-27 | パナソニック株式会社 | 半導体装置、及び該半導体装置を備えた実装体 |
| US8847387B2 (en) * | 2009-10-29 | 2014-09-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Robust joint structure for flip-chip bonding |
| US9607936B2 (en) * | 2009-10-29 | 2017-03-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Copper bump joint structures with improved crack resistance |
| KR101187977B1 (ko) * | 2009-12-08 | 2012-10-05 | 삼성전기주식회사 | 패키지 기판 및 그의 제조방법 |
| US9159652B2 (en) * | 2013-02-25 | 2015-10-13 | Stmicroelectronics S.R.L. | Electronic device comprising at least a chip enclosed in a package and a corresponding assembly process |
| US9666550B2 (en) * | 2014-12-16 | 2017-05-30 | Tongfu Microelectronics Co., Ltd. | Method and structure for wafer-level packaging |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63161649A (ja) * | 1986-12-25 | 1988-07-05 | Casio Comput Co Ltd | 半導体装置の製造方法 |
| US4970571A (en) * | 1987-09-24 | 1990-11-13 | Kabushiki Kaisha Toshiba | Bump and method of manufacturing the same |
| JP3361881B2 (ja) | 1994-04-28 | 2003-01-07 | 株式会社東芝 | 半導体装置とその製造方法 |
| JP3238011B2 (ja) * | 1994-07-27 | 2001-12-10 | 株式会社東芝 | 半導体装置 |
| JPH10150249A (ja) * | 1996-11-20 | 1998-06-02 | Ibiden Co Ltd | プリント配線板 |
| US5977632A (en) * | 1998-02-02 | 1999-11-02 | Motorola, Inc. | Flip chip bump structure and method of making |
-
1999
- 1999-04-13 JP JP11105586A patent/JP2000299337A/ja active Pending
-
2000
- 2000-02-29 US US09/515,515 patent/US6614113B2/en not_active Expired - Fee Related
- 2000-03-03 TW TW089103776A patent/TW533519B/zh not_active IP Right Cessation
- 2000-03-08 KR KR10-2000-0011551A patent/KR100536036B1/ko not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2000299337A5 (enExample) | ||
| TW533519B (en) | Semiconductor device and method for producing the same | |
| US6144100A (en) | Integrated circuit with bonding layer over active circuitry | |
| JPS599952A (ja) | パツケ−ジング基板 | |
| JP6694478B2 (ja) | Ｌｅｄチップ及びそのｌｅｄチップが適用されたｌｅｄモジュール | |
| TW201011784A (en) | Resistor and method for making same | |
| JP2004274042A5 (enExample) | ||
| JP3682227B2 (ja) | 電極の形成方法 | |
| US20110089025A1 (en) | Method for manufacturing a chip resistor having a low resistance | |
| TW200805530A (en) | Cap layer for an aluminum copper bond pad | |
| JP4632358B2 (ja) | チップ型ヒューズ | |
| JP3998703B2 (ja) | 半導体装置用リードフレーム | |
| JPH05503397A (ja) | 金属ラミネートおよびそれを用いた熱圧着電子パワーチップ構造 | |
| TWI338344B (en) | Semiconductor chip with solder bump suppressing growth of inter-metallic compound and method of frabricating the same | |
| JP3481415B2 (ja) | 半導体装置及びその製造方法 | |
| JP2000243773A5 (enExample) | ||
| JP2008091457A (ja) | 半導体装置及び半導体装置の製造方法 | |
| JP6057285B2 (ja) | 半導体素子搭載用基板 | |
| JPH11233542A (ja) | 半導体装置及びその製造方法 | |
| JP4270788B2 (ja) | 半導体装置およびその製造方法 | |
| JP3134067B2 (ja) | 低抵抗チップ抵抗器及びその製造方法 | |
| JP2000049181A5 (enExample) | ||
| TWI299247B (en) | Substrate with surface process structure and method for manufacturing the same | |
| TWI244187B (en) | Method of forming conductive connection structure on multilayer board and structure thereof | |
| JPH02159065A (ja) | コンタクト電極の形成方法 |