JP2007318106A5 - - Google Patents
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- Publication number
- JP2007318106A5 JP2007318106A5 JP2007113979A JP2007113979A JP2007318106A5 JP 2007318106 A5 JP2007318106 A5 JP 2007318106A5 JP 2007113979 A JP2007113979 A JP 2007113979A JP 2007113979 A JP2007113979 A JP 2007113979A JP 2007318106 A5 JP2007318106 A5 JP 2007318106A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- opening
- element formation
- formation layer
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000015572 biosynthetic process Effects 0.000 claims 31
- 239000004065 semiconductor Substances 0.000 claims 30
- 239000000758 substrate Substances 0.000 claims 19
- 229910052721 tungsten Inorganic materials 0.000 claims 19
- 238000004519 manufacturing process Methods 0.000 claims 18
- 239000010937 tungsten Substances 0.000 claims 18
- 238000000034 method Methods 0.000 claims 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 13
- 229910052750 molybdenum Inorganic materials 0.000 claims 13
- 239000011733 molybdenum Substances 0.000 claims 13
- 239000000203 mixture Substances 0.000 claims 10
- -1 tungsten nitride Chemical class 0.000 claims 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 5
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 claims 4
- 150000004767 nitrides Chemical class 0.000 claims 4
- 239000004020 conductor Substances 0.000 claims 3
- 229910052741 iridium Inorganic materials 0.000 claims 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 229910052763 palladium Inorganic materials 0.000 claims 3
- 229910052703 rhodium Inorganic materials 0.000 claims 3
- 239000010948 rhodium Substances 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- 229910052725 zinc Inorganic materials 0.000 claims 3
- 239000011701 zinc Substances 0.000 claims 3
- 229910052726 zirconium Inorganic materials 0.000 claims 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 239000010955 niobium Substances 0.000 claims 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 2
- 229910052762 osmium Inorganic materials 0.000 claims 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052788 barium Inorganic materials 0.000 claims 1
- 239000006229 carbon black Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007113979A JP5227536B2 (ja) | 2006-04-28 | 2007-04-24 | 半導体集積回路の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006126329 | 2006-04-28 | ||
| JP2006126329 | 2006-04-28 | ||
| JP2007113979A JP5227536B2 (ja) | 2006-04-28 | 2007-04-24 | 半導体集積回路の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007318106A JP2007318106A (ja) | 2007-12-06 |
| JP2007318106A5 true JP2007318106A5 (enExample) | 2010-04-02 |
| JP5227536B2 JP5227536B2 (ja) | 2013-07-03 |
Family
ID=38851654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007113979A Expired - Fee Related JP5227536B2 (ja) | 2006-04-28 | 2007-04-24 | 半導体集積回路の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5227536B2 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8563397B2 (en) * | 2008-07-09 | 2013-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2010027818A (ja) * | 2008-07-18 | 2010-02-04 | Semiconductor Energy Lab Co Ltd | 配線基板及びその作製方法、並びに、半導体装置及びその作製方法 |
| JP5216716B2 (ja) * | 2008-08-20 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| KR20110084523A (ko) * | 2008-11-07 | 2011-07-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP5583951B2 (ja) * | 2008-11-11 | 2014-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8054673B2 (en) * | 2009-04-16 | 2011-11-08 | Seagate Technology Llc | Three dimensionally stacked non volatile memory units |
| JP5581106B2 (ja) * | 2009-04-27 | 2014-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101893332B1 (ko) * | 2009-11-13 | 2018-08-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 구동 방법 |
| WO2012002186A1 (en) * | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| FR2977069B1 (fr) * | 2011-06-23 | 2014-02-07 | Soitec Silicon On Insulator | Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire |
| JP2013161878A (ja) | 2012-02-02 | 2013-08-19 | Renesas Electronics Corp | 半導体装置、および半導体装置の製造方法 |
| JP6452413B2 (ja) * | 2014-06-09 | 2019-01-16 | 日本放送協会 | 追記型固体メモリ |
| KR101855846B1 (ko) | 2015-12-29 | 2018-05-09 | 포항공과대학교 산학협력단 | 수직적층구조의 3차원 정적램 코어 셀 및 그를 포함하는 정적램 코어 셀 어셈블리 |
| JP6916794B2 (ja) * | 2016-08-17 | 2021-08-11 | 株式会社半導体エネルギー研究所 | 表示装置 |
| KR102104981B1 (ko) | 2017-12-19 | 2020-05-29 | 엘지디스플레이 주식회사 | 표시 장치 |
| KR102185116B1 (ko) | 2017-12-19 | 2020-12-01 | 엘지디스플레이 주식회사 | 표시 장치 |
| CN110731012B (zh) | 2019-04-15 | 2021-01-29 | 长江存储科技有限责任公司 | 具有处理器和异构存储器的一体化半导体器件及其形成方法 |
| KR20250099267A (ko) | 2019-04-15 | 2025-07-01 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 프로세서 및 동적 랜덤 액세스 메모리를 갖는 본디드 반도체 장치 및 이를 형성하는 방법 |
| KR102639431B1 (ko) | 2019-04-15 | 2024-02-22 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 프로세서 및 이종 메모리를 갖는 통합 반도체 디바이스 및 이를 형성하는 방법 |
| JP7311615B2 (ja) * | 2019-04-30 | 2023-07-19 | 長江存儲科技有限責任公司 | プロセッサおよびｎａｎｄフラッシュメモリを有する接合半導体デバイスならびにそれを形成する方法 |
| CN110720143B (zh) | 2019-04-30 | 2021-01-29 | 长江存储科技有限责任公司 | 具有处理器和nand闪存的键合半导体器件及其形成方法 |
| KR102308784B1 (ko) * | 2020-02-28 | 2021-10-01 | 한양대학교 산학협력단 | 텔루륨 산화물 및 이를 채널층으로 구비하는 박막트랜지스터 |
| CN116613136A (zh) * | 2022-02-09 | 2023-08-18 | 群创光电股份有限公司 | 电子装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0661418A (ja) * | 1992-08-07 | 1994-03-04 | Sharp Corp | 積層型半導体集積回路 |
| JP3809733B2 (ja) * | 1998-02-25 | 2006-08-16 | セイコーエプソン株式会社 | 薄膜トランジスタの剥離方法 |
| JP4137328B2 (ja) * | 1999-12-28 | 2008-08-20 | 光正 小柳 | ３次元半導体集積回路装置の製造方法 |
| JP4554152B2 (ja) * | 2002-12-19 | 2010-09-29 | 株式会社半導体エネルギー研究所 | 半導体チップの作製方法 |
| JP4408042B2 (ja) * | 2002-12-27 | 2010-02-03 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
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2007
- 2007-04-24 JP JP2007113979A patent/JP5227536B2/ja not_active Expired - Fee Related