JP2010515240A5 - - Google Patents

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Publication number
JP2010515240A5
JP2010515240A5 JP2009523981A JP2009523981A JP2010515240A5 JP 2010515240 A5 JP2010515240 A5 JP 2010515240A5 JP 2009523981 A JP2009523981 A JP 2009523981A JP 2009523981 A JP2009523981 A JP 2009523981A JP 2010515240 A5 JP2010515240 A5 JP 2010515240A5
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JP
Japan
Prior art keywords
nanotube
diode
conductive
anode
nonvolatile
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JP2009523981A
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English (en)
Japanese (ja)
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JP5410974B2 (ja
JP2010515240A (ja
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Priority claimed from PCT/US2007/075506 external-priority patent/WO2008021900A2/en
Publication of JP2010515240A publication Critical patent/JP2010515240A/ja
Publication of JP2010515240A5 publication Critical patent/JP2010515240A5/ja
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JP2009523981A 2006-08-08 2007-08-08 不揮発性ナノチューブダイオード及び不揮発性ナノチューブブロック、並びにそれらを用いるシステム及びその製造方法 Active JP5410974B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US83643706P 2006-08-08 2006-08-08
US83634306P 2006-08-08 2006-08-08
US60/836,343 2006-08-08
US60/836,437 2006-08-08
US84058606P 2006-08-28 2006-08-28
US60/840,586 2006-08-28
US85510906P 2006-10-27 2006-10-27
US60/855,109 2006-10-27
US91838807P 2007-03-16 2007-03-16
US60/918,388 2007-03-16
PCT/US2007/075506 WO2008021900A2 (en) 2006-08-08 2007-08-08 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Publications (3)

Publication Number Publication Date
JP2010515240A JP2010515240A (ja) 2010-05-06
JP2010515240A5 true JP2010515240A5 (enExample) 2010-09-24
JP5410974B2 JP5410974B2 (ja) 2014-02-05

Family

ID=39082936

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2009523981A Active JP5410974B2 (ja) 2006-08-08 2007-08-08 不揮発性ナノチューブダイオード及び不揮発性ナノチューブブロック、並びにそれらを用いるシステム及びその製造方法
JP2009523984A Active JP6114487B2 (ja) 2006-08-08 2007-08-08 メモリ素子およびクロスポイントスイッチと不揮発性ナノチューブブロックとを使用したそのアレイ
JP2009523985A Expired - Fee Related JP5394923B2 (ja) 2006-08-08 2007-08-08 スケーラブルな２端子ナノチューブスイッチを有する、不揮発性抵抗変化メモリ、ラッチ回路、および動作回路
JP2016246351A Pending JP2017085134A (ja) 2006-08-08 2016-12-20 メモリ素子およびクロスポイントスイッチと不揮発性ナノチューブブロックとを使用したそのアレイ

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2009523984A Active JP6114487B2 (ja) 2006-08-08 2007-08-08 メモリ素子およびクロスポイントスイッチと不揮発性ナノチューブブロックとを使用したそのアレイ
JP2009523985A Expired - Fee Related JP5394923B2 (ja) 2006-08-08 2007-08-08 スケーラブルな２端子ナノチューブスイッチを有する、不揮発性抵抗変化メモリ、ラッチ回路、および動作回路
JP2016246351A Pending JP2017085134A (ja) 2006-08-08 2016-12-20 メモリ素子およびクロスポイントスイッチと不揮発性ナノチューブブロックとを使用したそのアレイ

Country Status (5)

Country Link
EP (5) EP2057633B1 (enExample)
JP (4) JP5410974B2 (enExample)
KR (3) KR101169499B1 (enExample)
TW (3) TWI419163B (enExample)
WO (3) WO2008021912A2 (enExample)

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US8557685B2 (en) 2008-08-07 2013-10-15 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8835892B2 (en) 2008-10-30 2014-09-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
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US9129894B2 (en) * 2012-09-17 2015-09-08 Intermolecular, Inc. Embedded nonvolatile memory elements having resistive switching characteristics
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JP2018186260A (ja) * 2017-04-25 2018-11-22 国立大学法人横浜国立大学 熱電発電デバイスおよび熱輸送デバイス
CN112151098A (zh) * 2019-06-27 2020-12-29 台湾积体电路制造股份有限公司 多熔丝记忆体单元电路
US11594269B2 (en) * 2020-06-19 2023-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. One time programmable (OTP) magnetoresistive random-access memory (MRAM)
US11258023B1 (en) * 2020-08-05 2022-02-22 Nantero, Inc. Resistive change elements using passivating interface gaps and methods for making same
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US12354672B2 (en) 2023-08-28 2025-07-08 Macronix International Co., Ltd. Memory sensing with global non-regular counter and/or global multiple reference voltages

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